JPS6161375B2 - - Google Patents
Info
- Publication number
- JPS6161375B2 JPS6161375B2 JP8059880A JP8059880A JPS6161375B2 JP S6161375 B2 JPS6161375 B2 JP S6161375B2 JP 8059880 A JP8059880 A JP 8059880A JP 8059880 A JP8059880 A JP 8059880A JP S6161375 B2 JPS6161375 B2 JP S6161375B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- film
- photomask
- photosensitive resin
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- 239000011347 resin Substances 0.000 claims description 20
- 229920005989 resin Polymers 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 239000000872 buffer Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 32
- 239000004065 semiconductor Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
Description
【発明の詳細な説明】
本発明は半導体装置製造工程の写真食刻工程に
用いるフオトマスクおよびその製造方法に関する
ものであり、フオトマスクの光しやへい部端部に
おける回折光および斜めからの入射光を減少せし
め、かつフオトマスクと光被照射面（半導体基板
主面）との間隔が大きくても、フオトマスクに忠
実で微細なパターンが形成可能なフオトマスクを
提供するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photomask used in a photolithography process in a semiconductor device manufacturing process, and a method for manufacturing the same, and the present invention relates to a photomask used in a photolithography process in a semiconductor device manufacturing process, and a method for manufacturing the same, in which diffracted light at the end of a light-shielding part of a photomask and obliquely incident light are To provide a photomask that can form a fine pattern that is faithful to the photomask even if the distance between the photomask and the light-irradiated surface (main surface of a semiconductor substrate) is large.
従来半導体装置製造工程の写真食刻工程に用い
られているフオトマスクは第１図に示すようにソ
ーダガラスあるいは石英ガラス基板１上に、光し
やへい膜２たとえばクロムと酸化クロムの二層
膜、乳剤層等を選択的に形成したものである。 As shown in FIG. 1, a photomask conventionally used in the photolithography process of the semiconductor device manufacturing process includes a soda glass or quartz glass substrate 1, a light-shielding film 2, such as a two-layer film of chromium and chromium oxide, etc. An emulsion layer and the like are selectively formed.
上記フオトマスク３は、光しやへい部端部で回
折光の影響が大きくまた斜めからの入射光が光し
やへい膜２下に入り込むという欠点がある。した
がつて、フオトマスクと光被照射基板が密着した
いわゆる密着法ではほとんど問題なくフオトマス
クに忠実なパターンが転写できるが、マスクの寿
命が短い。この欠点のないフオトマスクと被照射
基板間にギヤツプＬを設けたいわゆるプロキシミ
テイ露光法では、前記回折光のためフオトマスク
に忠実なパターンが転写されない。特に第２図に
示すごとく、光しやへい部パターンのコーナーお
よびパターン巾が３μｍ以下になると光しやへい
部パターン両端側からの回析光の重なりあるいは
斜めからの入射光により、被照射半導体基板４上
に塗布したポジ型感光性樹脂膜５を露光現像する
と、第２図Ｂのごとく残された樹脂膜パターン６
の残膜率の低下あるいはピンホール７が発生する
という欠点があつた。特にパターン巾が２μｍ程
度となつてくると、ピンホール７が生じ不良パタ
ーンとなる。 The above-mentioned photomask 3 has the disadvantage that the influence of diffracted light is large at the end of the light shielding part, and that obliquely incident light enters under the light shielding film 2. Therefore, in the so-called close contact method in which the photomask and the substrate to be irradiated with light are brought into close contact, a faithful pattern can be transferred to the photomask with almost no problems, but the life of the mask is short. In the so-called proximity exposure method in which a gap L is provided between the photomask and the irradiated substrate, which does not have this defect, a faithful pattern cannot be transferred to the photomask because of the diffracted light. In particular, as shown in Figure 2, when the corner and pattern width of the light shield pattern are less than 3 μm, the irradiated semiconductor may be When the positive photosensitive resin film 5 coated on the substrate 4 is exposed and developed, a resin film pattern 6 remains as shown in FIG. 2B.
There were drawbacks such as a decrease in the residual film ratio or the occurrence of pinholes 7. In particular, when the pattern width becomes about 2 μm, pinholes 7 occur, resulting in a defective pattern.
本発明は従来のフオトマスクが有していた欠点
を解決せんとするものであり、フオトマスクの光
遮蔽部端部における回折光および斜め入射光が半
導体基板上等の形成パターンに影響を及ぼさない
ようなフオトマスクを提供せんとするものであ
る。 The present invention aims to solve the drawbacks of conventional photomasks, and is designed to prevent diffracted light and obliquely incident light at the ends of the light shielding part of the photomask from affecting patterns formed on semiconductor substrates, etc. The aim is to provide photomasks.
本発明に係るフオトマスクはソーダガラスある
いは石英ガラス等の透明基板上に光しやへい部と
光透過部を形成し、かつ光透過部として光しやへ
い部に隣接して台地状の透明体を形成した構造を
有することを特徴とするものである。 The photomask according to the present invention has a light-shielding part and a light-transmitting part formed on a transparent substrate such as soda glass or quartz glass, and a plateau-like transparent body is provided as the light-transmitting part adjacent to the light-shielding part. It is characterized by having a formed structure.
光しやへい部は、写真食刻工程に用いる感光性
樹脂膜の感光波長領域である440nm程度以下の波
長の光を数十％以上しやへいする膜たとえばクロ
ム、酸化鉄および多結晶硅素膜などの薄膜で形成
する。光透過部は前記波長の光を数十％以上透過
する膜たとえば二酸化硅素膜、クロムおよびアル
ミニウムなどの金属酸化物などで構成する。 The light shielding part is a film made of chromium, iron oxide, and polycrystalline silicon, which shields several tens of percent or more of light with a wavelength of about 440 nm or less, which is the sensitive wavelength range of the photosensitive resin film used in the photolithography process. Formed with a thin film such as The light transmitting portion is made of a film that transmits several tens of percent or more of the light of the above wavelength, such as a silicon dioxide film or a metal oxide such as chromium or aluminum.
以下実施例にもとずいて本発明のフオトマスク
を詳細に説明する。 The photomask of the present invention will be explained in detail below based on Examples.
まず、第３図Ａのごとく、ソーダガラスあるい
は石英ガラス基板２１の一主面上にクロムあるい
は酸化クロムなどの光しやへい膜２２を一様に形
成する。次に全面に感光性樹脂膜を形成した後、
選択的に紫外線照射し、現像、リンス処理を行な
い所定の感光性樹脂パターン２３を形成する。感
光性樹脂膜パターン２３の端部２３′は基板２１
に対して65〜90度の端部傾斜角を有するように形
成するＡ。 First, as shown in FIG. 3A, a light-shielding film 22 made of chromium or chromium oxide is uniformly formed on one main surface of a soda glass or quartz glass substrate 21. Next, after forming a photosensitive resin film on the entire surface,
A predetermined photosensitive resin pattern 23 is formed by selectively irradiating ultraviolet rays, developing, and rinsing. The end portion 23' of the photosensitive resin film pattern 23 is connected to the substrate 21.
A is formed to have an end inclination angle of 65 to 90 degrees.
次に前記光しやへい膜２２を樹脂膜パターン２
３にてエツチングし、膜２２よりなる光しやへい
部２２′のパターンを形成する。そして全面にス
パツタリング法により二酸化硅素膜２４を形成す
るＢ。そして弗酸緩衝液により、前記感光性樹脂
膜パターン２３の端部に付着した二酸化硅素膜２
４′のみを選択除去する。前記スパツタリング法
により形成した二酸化硅素膜２４はスパツタ源に
平行な面から65〜90度の傾斜面に形成した部分２
４′では、スパツタ源に平行な面での膜より弗酸
緩衝液による食刻速度が約20倍速いという特徴が
あり、前記選択除去が容易にできる。 Next, the light-shielding film 22 is applied to the resin film pattern 2.
3 to form a pattern of light shielding portions 22' made of the film 22. Then, a silicon dioxide film 24 is formed on the entire surface by a sputtering method (B). Then, the silicon dioxide film 2 attached to the end of the photosensitive resin film pattern 23 is coated with a hydrofluoric acid buffer.
Only 4' is selectively removed. The silicon dioxide film 24 formed by the sputtering method has a portion 2 formed on an inclined plane at an angle of 65 to 90 degrees from a plane parallel to the sputtering source.
4' has a feature that the etching speed by the hydrofluoric acid buffer is about 20 times faster than that of the film on the plane parallel to the sputtering source, and the selective removal can be easily performed.
次に感光樹脂膜パターン２３と感光性樹脂膜上
の二酸化硅素膜２４を感光性樹脂膜の除去液で同
時に除去し、ガラス基板２１上に光しやへい部２
２′とスパツタリング二酸化硅素膜よりなる光透
明体２４″が交互に形成されたフオトマスク２５
を形成する。 Next, the photosensitive resin film pattern 23 and the silicon dioxide film 24 on the photosensitive resin film are simultaneously removed using a photosensitive resin film removal solution, and the light-shielding portion 2 is placed on the glass substrate 21.
2' and a light transparent body 24'' made of a sputtered silicon dioxide film are alternately formed.
form.
すなわち、この工程により形成されたフオトマ
スク２５は、光透明体２４″が光しやへい部２
２′と基板２１上で接しかつ隣接して形成されて
おり、２４″は逆台形状であり、光しやへい部２
２′の端部からその直下に入り込む光を減少させ
ることができる。 That is, in the photomask 25 formed through this step, the light-transparent body 24'' is located at the light-shielding portion 2.
2' and is formed adjacently on the substrate 21, and 24'' has an inverted trapezoidal shape and is a light-shielding part 2.
It is possible to reduce the light that enters from the end of 2' directly below it.
このフオトマスクを用いて、半導体基板２６上
に感光性樹脂膜パターン２７を第４図のごとく形
成すると、２μｍ程度のパターンにおいても第２
図Ｂでみられたごとき不都合は発生せず良好な感
光性樹脂パターンを形成することが可能となつ
た。 When a photosensitive resin film pattern 27 is formed on a semiconductor substrate 26 using this photomask as shown in FIG.
It was possible to form a good photosensitive resin pattern without the problems seen in Figure B.
この様子を第５図で説明すると、まず、本発明
のごとき透明体２４″がないとき、２２′の端部付
近にたとえば斜めから入射する光I0は点線I1のよ
うに進行し、２２′の直下に多く入り込む。一
方、透明体２４″が第５図のようにあると、入射
光I0は実線I2のように出力され、２２′直下への光
の入り込みを少なくすることができる。すなわ
ち、２１と２４″の屈折率n1、n2はほぼ等しく、
n2＞n3であり、台形状の透明体２４″の端面にお
いては光が図のように曲げられる。したがつて、
透明体２４″の存在により、２２′直下への光の回
り込みが少なくなる。 To explain this situation with reference to FIG. 5, first, when there is no transparent body 24'' as in the present invention, light I 0 that is obliquely incident near the end of 22' travels as shown by the dotted line I 1 and 22 On the other hand, if the transparent body 24'' is placed as shown in Figure 5, the incident light I 0 will be output as shown by the solid line I 2 , and the amount of light that will enter directly under the transparent body 22' can be reduced. can. That is, the refractive indices n 1 and n 2 of 21 and 24″ are almost equal,
n 2 > n 3 , and the light is bent as shown in the figure at the end face of the trapezoidal transparent body 24''. Therefore,
The presence of the transparent body 24'' reduces the amount of light that goes around directly below 22'.
また、本発明のフオトマスクは第６図のごとき
形状とすることもできる。そして、膜２４として
はクロム、アルミ等の酸化物でもよい。 Further, the photomask of the present invention can also have a shape as shown in FIG. The film 24 may be an oxide of chromium, aluminum, or the like.
以上のように、本発明によれば光しやへい部端
部で回析した光およびフオトマスクに対して斜め
方向から入射した光の光しやへい部直下への強度
を弱くすることができる。したがつて、従来問題
となつていたプロキシミテイ露光法に本発明によ
るフオトマスクを用いることにより、光の回り込
みによる感光性樹脂膜パターン不良を防止でき、
フオトマスクに忠実な微細パターンを形成するこ
とができる。 As described above, according to the present invention, it is possible to weaken the intensity of light diffracted at the end of the light shield and light incident on the photomask from an oblique direction directly below the light shield. Therefore, by using the photomask according to the present invention in the proximity exposure method, which has been a problem in the past, it is possible to prevent defects in the photosensitive resin film pattern due to the wraparound of light.
It is possible to form fine patterns that are faithful to photomasks.
また本発明のフオトマスクは光透過膜よりなる
透明体が形成されているため、フオトマスク使用
中あるいは洗浄中に破損することがなく、寿命が
長く使用できる。 Further, since the photomask of the present invention is formed with a transparent body made of a light-transmitting film, the photomask will not be damaged during use or cleaning, and can be used for a long time.
以上のように、本発明は高精度な半導体装置の
製造に大きく寄与するものである。 As described above, the present invention greatly contributes to the manufacture of highly accurate semiconductor devices.
第１図は従来のフオトマスクの構造断面図、第
２図Ａ，Ｂは第１図のマスクを用いた露光工程
図、第３図Ａ〜Ｃは本発明の一実施例にかかるフ
オトマスクの製造工程図、第４図は本発明のフオ
トマスクを用いて感光性樹脂パターンを形成した
半導体基板の断面図、第５図は本発明のフオトマ
スクの部分断面図、第６図は本発明の他の実施例
のフオトマスクの断面図である。
２１……ガラス基板、２２……光しやへい膜、
２２′……光しやへい部、２３′……感光性樹脂パ
ターン、２４……二酸化硅素膜、２４″……光透
明体。
FIG. 1 is a structural sectional view of a conventional photomask, FIGS. 2A and B are exposure process diagrams using the mask of FIG. 1, and FIGS. 3A to C are manufacturing steps of a photomask according to an embodiment of the present invention. 4 is a cross-sectional view of a semiconductor substrate on which a photosensitive resin pattern is formed using the photomask of the present invention, FIG. 5 is a partial cross-sectional view of the photomask of the present invention, and FIG. 6 is another embodiment of the present invention. FIG. 2 is a sectional view of a photomask. 21...Glass substrate, 22...Light-shielding film,
22'...Light-shielding portion, 23'...Photosensitive resin pattern, 24...Silicon dioxide film, 24''...Light transparent body.
Claims (1)
形成し、この光しやへい部に隣接して前記基板の
一主面上に台形状透明体を形成してなることを特
徴とするフオトマスク。 ２ 透明基板の一主面上に光しやへい膜を形成し
た後、感光性樹脂パターンを形成する工程と、ス
パツタリング法により二酸化硅素膜を前記光しや
へい膜および感光性樹脂パターン上全面に形成す
る工程と、弗酸緩衝液により前記感光性樹脂膜パ
ターンの側壁に付着した前記二酸化硅素膜を食刻
する工程と、前記光しやへい膜上の感光性樹脂膜
と二酸化硅素膜を同時に除去する工程とを備えた
ことを特徴とするフオトマスクの製造方法。[Claims] 1. A light-shielding portion is selectively formed on one principal surface of a transparent substrate, and a trapezoidal transparent body is formed on one principal surface of the substrate adjacent to the light-shielding portion. A photo mask that is characterized by: 2. After forming a light-shielding film on one main surface of the transparent substrate, a step of forming a photosensitive resin pattern and applying a silicon dioxide film over the entire surface of the light-shielding film and the photosensitive resin pattern by a sputtering method. a step of etching the silicon dioxide film attached to the side wall of the photosensitive resin film pattern with a hydrofluoric acid buffer; and a step of etching the silicon dioxide film on the photosensitive resin film and the silicon dioxide film at the same time. A method for manufacturing a photomask, comprising a step of removing the photomask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8059880A JPS576849A (en) | 1980-06-13 | 1980-06-13 | Photomask and its preparation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8059880A JPS576849A (en) | 1980-06-13 | 1980-06-13 | Photomask and its preparation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS576849A JPS576849A (en) | 1982-01-13 |
| JPS6161375B2 true JPS6161375B2 (en) | 1986-12-25 |
Family
ID=13722757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8059880A Granted JPS576849A (en) | 1980-06-13 | 1980-06-13 | Photomask and its preparation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS576849A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3374452D1 (en) * | 1982-04-05 | 1987-12-17 | Ibm | Method of increasing the image resolution of a transmitting mask and improved masks for performing the method |
| JP2530833B2 (en) * | 1987-02-07 | 1996-09-04 | 株式会社日立製作所 | Method of forming photoresist pattern |
| JP2710967B2 (en) * | 1988-11-22 | 1998-02-10 | 株式会社日立製作所 | Manufacturing method of integrated circuit device |
| JP2566048B2 (en) * | 1990-04-19 | 1996-12-25 | シャープ株式会社 | Light exposure mask and method of manufacturing the same |
| JP2008310092A (en) * | 2007-06-15 | 2008-12-25 | Shin Etsu Chem Co Ltd | Photomask |
| JP4977535B2 (en) * | 2007-06-15 | 2012-07-18 | 信越化学工業株式会社 | Pattern transfer method |
| JP4977794B2 (en) * | 2011-09-21 | 2012-07-18 | 信越化学工業株式会社 | Pattern transfer method and photomask |
-
1980
- 1980-06-13 JP JP8059880A patent/JPS576849A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS576849A (en) | 1982-01-13 |
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