JPS6160576B2 - - Google Patents
Info
- Publication number
- JPS6160576B2 JPS6160576B2 JP52033081A JP3308177A JPS6160576B2 JP S6160576 B2 JPS6160576 B2 JP S6160576B2 JP 52033081 A JP52033081 A JP 52033081A JP 3308177 A JP3308177 A JP 3308177A JP S6160576 B2 JPS6160576 B2 JP S6160576B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- waveguide
- open end
- measuring
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 20
- 239000000969 carrier Substances 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 238000005259 measurement Methods 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000001514 detection method Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3308177A JPS53118373A (en) | 1977-03-25 | 1977-03-25 | Method of measuring characteristic of semiconductor by microwave |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3308177A JPS53118373A (en) | 1977-03-25 | 1977-03-25 | Method of measuring characteristic of semiconductor by microwave |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53118373A JPS53118373A (en) | 1978-10-16 |
| JPS6160576B2 true JPS6160576B2 (it) | 1986-12-22 |
Family
ID=12376739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3308177A Granted JPS53118373A (en) | 1977-03-25 | 1977-03-25 | Method of measuring characteristic of semiconductor by microwave |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53118373A (it) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5961039A (ja) * | 1982-09-30 | 1984-04-07 | Nippon Telegr & Teleph Corp <Ntt> | 半導体基板結晶品質検査方法 |
| JPS61114543A (ja) * | 1984-11-09 | 1986-06-02 | Hitachi Ltd | 半導体評価装置 |
| US4777146A (en) * | 1987-02-24 | 1988-10-11 | American Telephone And Telegraph Company, At&T Bell Laboratories | Fabrication process involving semi-insulating material |
| JPH07105427B2 (ja) * | 1992-10-19 | 1995-11-13 | 学校法人幾徳学園 | 半導体材料のライフタイム評価方法とその装置 |
| AU2001276896A1 (en) * | 2000-07-14 | 2002-01-30 | Midwest Research Institute | Radio frequency coupling apparatus and method for measuring minority carrier lifetimes in semiconductor materials |
| JP4265206B2 (ja) * | 2002-11-27 | 2009-05-20 | 株式会社 東北テクノアーチ | 非接触導電率測定システム |
| JP6219559B2 (ja) * | 2012-09-07 | 2017-10-25 | 株式会社神戸製鋼所 | 半導体キャリア寿命測定装置および該方法 |
-
1977
- 1977-03-25 JP JP3308177A patent/JPS53118373A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53118373A (en) | 1978-10-16 |
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