JPS6157681B2 - - Google Patents
Info
- Publication number
- JPS6157681B2 JPS6157681B2 JP56052804A JP5280481A JPS6157681B2 JP S6157681 B2 JPS6157681 B2 JP S6157681B2 JP 56052804 A JP56052804 A JP 56052804A JP 5280481 A JP5280481 A JP 5280481A JP S6157681 B2 JPS6157681 B2 JP S6157681B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- resistance value
- weight
- present
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000203 mixture Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- 229910052788 barium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
- Compositions Of Oxide Ceramics (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56052804A JPS57167601A (en) | 1981-04-08 | 1981-04-08 | Temperature sensitive switching element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56052804A JPS57167601A (en) | 1981-04-08 | 1981-04-08 | Temperature sensitive switching element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57167601A JPS57167601A (en) | 1982-10-15 |
JPS6157681B2 true JPS6157681B2 (enrdf_load_html_response) | 1986-12-08 |
Family
ID=12925024
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56052804A Granted JPS57167601A (en) | 1981-04-08 | 1981-04-08 | Temperature sensitive switching element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57167601A (enrdf_load_html_response) |
-
1981
- 1981-04-08 JP JP56052804A patent/JPS57167601A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS57167601A (en) | 1982-10-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3899407A (en) | Method of producing thin film devices of doped vanadium oxide material | |
US3044968A (en) | Positive temperature coefficient thermistor materials | |
JPH02249203A (ja) | 抵抗材料、その製造方法およびそれを用いた抵抗ペースト | |
JPS6157681B2 (enrdf_load_html_response) | ||
CN114807859B (zh) | 一种高电阻温度系数铂薄膜及其制备方法 | |
US5316973A (en) | Method of making semiconducting ferroelectric PTCR devices | |
JPH0152882B2 (enrdf_load_html_response) | ||
JPS60208803A (ja) | 薄膜サ−ミスタの製造方法 | |
JPS63315560A (ja) | サーミスタ磁器組成物 | |
JP4073658B2 (ja) | 3元合金材料 | |
JPH02121303A (ja) | Ntcサーミスタ素子の製造方法 | |
JP2575059B2 (ja) | 電気比抵抗値の温度係数の小さいFeーCrーA▲l▼系合金よりなる電熱体用材料 | |
JPS6348822B2 (enrdf_load_html_response) | ||
JPS5884405A (ja) | 薄膜サ−ミスタの製造方法 | |
JPS62296401A (ja) | チタン酸バリウム系半導体及びその製造方法 | |
JPS6322444B2 (enrdf_load_html_response) | ||
JPH04170001A (ja) | 薄膜サーミスタ及びその製造方法 | |
JPH04192302A (ja) | 薄膜サーミスタ素子 | |
JPH05135913A (ja) | サーミスタ用酸化物半導体の製造方法 | |
JPS60253201A (ja) | 感温抵抗材料 | |
JPS5923324Y2 (ja) | リ−ドスイツチ | |
JPS6197902A (ja) | 感温抵抗材料 | |
JPH07230902A (ja) | 半導体セラミック素子 | |
JPS63122101A (ja) | 電圧非直線抵抗体 | |
JPS63315552A (ja) | サーミスタ磁器組成物 |