JPS6156597B2 - - Google Patents

Info

Publication number
JPS6156597B2
JPS6156597B2 JP55150623A JP15062380A JPS6156597B2 JP S6156597 B2 JPS6156597 B2 JP S6156597B2 JP 55150623 A JP55150623 A JP 55150623A JP 15062380 A JP15062380 A JP 15062380A JP S6156597 B2 JPS6156597 B2 JP S6156597B2
Authority
JP
Japan
Prior art keywords
node
mos transistor
potential
state
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55150623A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5774886A (en
Inventor
Isao Ogura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP55150623A priority Critical patent/JPS5774886A/ja
Priority to US06/313,994 priority patent/US4490628A/en
Priority to DE3142557A priority patent/DE3142557C2/de
Publication of JPS5774886A publication Critical patent/JPS5774886A/ja
Publication of JPS6156597B2 publication Critical patent/JPS6156597B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP55150623A 1980-10-29 1980-10-29 Semiconductor integrated circuit device Granted JPS5774886A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP55150623A JPS5774886A (en) 1980-10-29 1980-10-29 Semiconductor integrated circuit device
US06/313,994 US4490628A (en) 1980-10-29 1981-10-22 MOS Decoder selection circuit having a barrier transistor whose non-conduction period is unaffected by substrate potential disturbances
DE3142557A DE3142557C2 (de) 1980-10-29 1981-10-27 Integrierte Halbleiterschaltung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55150623A JPS5774886A (en) 1980-10-29 1980-10-29 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5774886A JPS5774886A (en) 1982-05-11
JPS6156597B2 true JPS6156597B2 (enExample) 1986-12-03

Family

ID=15500904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55150623A Granted JPS5774886A (en) 1980-10-29 1980-10-29 Semiconductor integrated circuit device

Country Status (3)

Country Link
US (1) US4490628A (enExample)
JP (1) JPS5774886A (enExample)
DE (1) DE3142557C2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61294695A (ja) * 1985-06-20 1986-12-25 Mitsubishi Electric Corp 半導体集積回路装置
JP4533821B2 (ja) * 2005-08-16 2010-09-01 パナソニック株式会社 Ｍｏｓ型固体撮像装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3644904A (en) * 1969-11-12 1972-02-22 Gen Instrument Corp Chip select circuit for multichip random access memory
US3795898A (en) * 1972-11-03 1974-03-05 Advanced Memory Syst Random access read/write semiconductor memory
DE2557165C3 (de) * 1975-12-18 1979-01-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Decoderschaltung und ihre Anordnung zur Integrierung auf einem Halbleiterbaustein
US4156938A (en) * 1975-12-29 1979-05-29 Mostek Corporation MOSFET Memory chip with single decoder and bi-level interconnect lines
US4074237A (en) * 1976-03-08 1978-02-14 International Business Machines Corporation Word line clamping circuit and decoder
US4042915A (en) * 1976-04-15 1977-08-16 National Semiconductor Corporation MOS dynamic random access memory having an improved address decoder circuit
US4081699A (en) * 1976-09-14 1978-03-28 Mos Technology, Inc. Depletion mode coupling device for a memory line driving circuit
DE2641693C2 (de) * 1976-09-16 1978-11-16 Siemens Ag, 1000 Berlin Und 8000 Muenchen Decodierschaltung mit MOS-Transistoren
JPS5493335A (en) * 1977-12-30 1979-07-24 Fujitsu Ltd Decoder circuit
JPS54122939A (en) * 1978-03-16 1979-09-22 Nec Corp Decoder circuit
JPS55150623A (en) * 1979-05-14 1980-11-22 Sharp Corp Receiving unit

Also Published As

Publication number Publication date
US4490628A (en) 1984-12-25
DE3142557A1 (de) 1982-08-12
JPS5774886A (en) 1982-05-11
DE3142557C2 (de) 1986-02-27

Similar Documents

Publication Publication Date Title
KR100224960B1 (ko) 반도체 집적 회로 장치(semiconductor integrated circuit device)
KR950010621B1 (ko) 반도체 기억장치
US20100232244A1 (en) Semiconductor memory device
US8036058B2 (en) Symmetrically operating single-ended input buffer devices and methods
US20040165462A1 (en) Low-voltage sense amplifier and method
US4503343A (en) Active pull-up circuit
US6859386B2 (en) Semiconductor memory device with memory cell having low cell ratio
US5808956A (en) Bus-line drive circuit and semiconductor storage device comprising the same
JPS6146977B2 (enExample)
JP2003288785A (ja) 半導体記憶装置
US6292418B1 (en) Semiconductor memory device
US4734889A (en) Semiconductor memory
US5677889A (en) Static type semiconductor device operable at a low voltage with small power consumption
US6570799B1 (en) Precharge and reference voltage technique for dynamic random access memories
US5579276A (en) Internal voltage boosting circuit in a semiconductor memory device
JPH09185886A (ja) データ保持回路
US4554469A (en) Static bootstrap semiconductor drive circuit
KR0154755B1 (ko) 가변플레이트전압 발생회로를 구비하는 반도체 메모리장치
US6141266A (en) Method and apparatus for generating a signal with a voltage insensitive or controlled delay
JPS6027118B2 (ja) 半導体メモリ装置
JPS6156597B2 (enExample)
JPH0414435B2 (enExample)
JPH07254288A (ja) 半導体記憶装置
JPS6146978B2 (enExample)
JP5533264B2 (ja) 半導体メモリ