JPS6155776B2 - - Google Patents
Info
- Publication number
- JPS6155776B2 JPS6155776B2 JP8681077A JP8681077A JPS6155776B2 JP S6155776 B2 JPS6155776 B2 JP S6155776B2 JP 8681077 A JP8681077 A JP 8681077A JP 8681077 A JP8681077 A JP 8681077A JP S6155776 B2 JPS6155776 B2 JP S6155776B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon oxide
- oxide film
- hole
- metal wiring
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 42
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 38
- 239000007789 gas Substances 0.000 claims description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims description 9
- 239000011574 phosphorus Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 150000002927 oxygen compounds Chemical class 0.000 claims description 3
- 150000003377 silicon compounds Chemical class 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 238000001947 vapour-phase growth Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 description 20
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- 239000010410 layer Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 239000012212 insulator Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical class [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- -1 SiO 0.5 Chemical compound 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Local Oxidation Of Silicon (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8681077A JPS5421289A (en) | 1977-07-19 | 1977-07-19 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8681077A JPS5421289A (en) | 1977-07-19 | 1977-07-19 | Manufacture for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5421289A JPS5421289A (en) | 1979-02-17 |
| JPS6155776B2 true JPS6155776B2 (fr) | 1986-11-29 |
Family
ID=13897158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8681077A Granted JPS5421289A (en) | 1977-07-19 | 1977-07-19 | Manufacture for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5421289A (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56142642A (en) * | 1980-04-07 | 1981-11-07 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS59141232A (ja) * | 1983-02-02 | 1984-08-13 | Seiko Instr & Electronics Ltd | 半導体装置の製造方法 |
-
1977
- 1977-07-19 JP JP8681077A patent/JPS5421289A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5421289A (en) | 1979-02-17 |
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