JPS6155263B2 - - Google Patents

Info

Publication number
JPS6155263B2
JPS6155263B2 JP8699280A JP8699280A JPS6155263B2 JP S6155263 B2 JPS6155263 B2 JP S6155263B2 JP 8699280 A JP8699280 A JP 8699280A JP 8699280 A JP8699280 A JP 8699280A JP S6155263 B2 JPS6155263 B2 JP S6155263B2
Authority
JP
Japan
Prior art keywords
type
sio
substrate
film
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8699280A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5710980A (en
Inventor
Shoichi Kakimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8699280A priority Critical patent/JPS5710980A/ja
Publication of JPS5710980A publication Critical patent/JPS5710980A/ja
Publication of JPS6155263B2 publication Critical patent/JPS6155263B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
JP8699280A 1980-06-23 1980-06-23 Semiconductor pressure detecting device Granted JPS5710980A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8699280A JPS5710980A (en) 1980-06-23 1980-06-23 Semiconductor pressure detecting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8699280A JPS5710980A (en) 1980-06-23 1980-06-23 Semiconductor pressure detecting device

Publications (2)

Publication Number Publication Date
JPS5710980A JPS5710980A (en) 1982-01-20
JPS6155263B2 true JPS6155263B2 (zh) 1986-11-27

Family

ID=13902359

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8699280A Granted JPS5710980A (en) 1980-06-23 1980-06-23 Semiconductor pressure detecting device

Country Status (1)

Country Link
JP (1) JPS5710980A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6387671A (ja) * 1986-10-01 1988-04-18 Seiko Epson Corp 磁気記録装置
CN102012287A (zh) * 2010-09-29 2011-04-13 东南大学 圆形硅薄膜微机电压力传感器

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6050970A (ja) * 1983-08-31 1985-03-22 Toshiba Corp 半導体圧力変換器
JPS62127637A (ja) * 1985-11-28 1987-06-09 Yokogawa Electric Corp 半導体圧力変換器
JP5867057B2 (ja) * 2011-12-16 2016-02-24 株式会社豊田中央研究所 Ｍｅｍｓデバイス

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6387671A (ja) * 1986-10-01 1988-04-18 Seiko Epson Corp 磁気記録装置
CN102012287A (zh) * 2010-09-29 2011-04-13 东南大学 圆形硅薄膜微机电压力传感器

Also Published As

Publication number Publication date
JPS5710980A (en) 1982-01-20

Similar Documents

Publication Publication Date Title
US8161820B2 (en) Pressure sensor
KR100507942B1 (ko) 반도체용 압력 센서
US5537882A (en) Semiconductor sensor for detecting physical amount without thermal hypsteresis where output wiring is disposed in a stress insensitive direction
US7808365B2 (en) Pressure sensor
JPS60128673A (ja) 半導体感圧装置
WO2000039551A1 (fr) Detecteur de pression
JPH07113647B2 (ja) 半導体加速度センサ
JP3873454B2 (ja) 半導体圧力センサ
US6838303B2 (en) Silicon pressure sensor and the manufacturing method thereof
WO2010055734A1 (ja) 半導体圧力センサ
JP2000340805A (ja) 電子部品および製造方法
US5444901A (en) Method of manufacturing silicon pressure sensor having dual elements simultaneously mounted
JPS6155263B2 (zh)
JPS5887880A (ja) 半導体ダイアフラム形センサ
JP5151281B2 (ja) 半導体圧力センサ
JPH0419495B2 (zh)
JP3543530B2 (ja) 半導体圧力センサ
JP2512220B2 (ja) 複合機能形センサ
JP2864700B2 (ja) 半導体圧力センサ及びその製造方法
JPH05343705A (ja) Ｓｏｉ基板を用いた圧力センサ
JPH098326A (ja) 半導体圧力センサ
JPH036674B2 (zh)
JP2007093242A (ja) 圧力センサ
JPH01183165A (ja) 半導体圧力センサ
JPH0536993A (ja) 半導体圧力検出装置