JPS6154668A - 光トリガ・光クエンチ静電誘導サイリスタ - Google Patents

光トリガ・光クエンチ静電誘導サイリスタ

Info

Publication number
JPS6154668A
JPS6154668A JP59176957A JP17695784A JPS6154668A JP S6154668 A JPS6154668 A JP S6154668A JP 59176957 A JP59176957 A JP 59176957A JP 17695784 A JP17695784 A JP 17695784A JP S6154668 A JPS6154668 A JP S6154668A
Authority
JP
Japan
Prior art keywords
region
impurity density
low impurity
conductivity type
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59176957A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0531311B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Junichi Nishizawa
潤一 西澤
Naoshige Tamamushi
玉蟲　尚茂
Kenichi Nonaka
賢一 野中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP59176957A priority Critical patent/JPS6154668A/ja
Publication of JPS6154668A publication Critical patent/JPS6154668A/ja
Publication of JPH0531311B2 publication Critical patent/JPH0531311B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • H10F30/2635—Static induction photothyristors

Landscapes

  • Thyristors (AREA)
  • Electronic Switches (AREA)
JP59176957A 1984-08-25 1984-08-25 光トリガ・光クエンチ静電誘導サイリスタ Granted JPS6154668A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59176957A JPS6154668A (ja) 1984-08-25 1984-08-25 光トリガ・光クエンチ静電誘導サイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59176957A JPS6154668A (ja) 1984-08-25 1984-08-25 光トリガ・光クエンチ静電誘導サイリスタ

Publications (2)

Publication Number Publication Date
JPS6154668A true JPS6154668A (ja) 1986-03-18
JPH0531311B2 JPH0531311B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-05-12

Family

ID=16022671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59176957A Granted JPS6154668A (ja) 1984-08-25 1984-08-25 光トリガ・光クエンチ静電誘導サイリスタ

Country Status (1)

Country Link
JP (1) JPS6154668A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4719551A (en) * 1985-06-29 1988-01-12 Zaidan Hojin Handotai Kenkyu Sinkokai Optically controlled power converting apparatus
US4914043A (en) * 1986-09-26 1990-04-03 Zaidan Hojin Handotai Kenkyu Shinkokai Method of making an integrated light-triggered and light-quenched static induction thyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4719551A (en) * 1985-06-29 1988-01-12 Zaidan Hojin Handotai Kenkyu Sinkokai Optically controlled power converting apparatus
US4914043A (en) * 1986-09-26 1990-04-03 Zaidan Hojin Handotai Kenkyu Shinkokai Method of making an integrated light-triggered and light-quenched static induction thyristor

Also Published As

Publication number Publication date
JPH0531311B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-05-12

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees