JPS6153718A - アモルフアスシリコン製造装置 - Google Patents

アモルフアスシリコン製造装置

Info

Publication number
JPS6153718A
JPS6153718A JP59174889A JP17488984A JPS6153718A JP S6153718 A JPS6153718 A JP S6153718A JP 59174889 A JP59174889 A JP 59174889A JP 17488984 A JP17488984 A JP 17488984A JP S6153718 A JPS6153718 A JP S6153718A
Authority
JP
Japan
Prior art keywords
amorphous silicon
substrate
film
chamber
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59174889A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0587970B2 (enExample
Inventor
Ryoji Oritsuki
折付　良二
Kazuo Sunahara
砂原　和雄
Shoji Yamada
山田　昭二
Mikio Takahashi
高橋　幹男
Kenkichi Suzuki
堅吉 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59174889A priority Critical patent/JPS6153718A/ja
Publication of JPS6153718A publication Critical patent/JPS6153718A/ja
Publication of JPH0587970B2 publication Critical patent/JPH0587970B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP59174889A 1984-08-24 1984-08-24 アモルフアスシリコン製造装置 Granted JPS6153718A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59174889A JPS6153718A (ja) 1984-08-24 1984-08-24 アモルフアスシリコン製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59174889A JPS6153718A (ja) 1984-08-24 1984-08-24 アモルフアスシリコン製造装置

Publications (2)

Publication Number Publication Date
JPS6153718A true JPS6153718A (ja) 1986-03-17
JPH0587970B2 JPH0587970B2 (enExample) 1993-12-20

Family

ID=15986442

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59174889A Granted JPS6153718A (ja) 1984-08-24 1984-08-24 アモルフアスシリコン製造装置

Country Status (1)

Country Link
JP (1) JPS6153718A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5445699A (en) * 1989-06-16 1995-08-29 Tokyo Electron Kyushu Limited Processing apparatus with a gas distributor having back and forth parallel movement relative to a workpiece support surface
JP2011198920A (ja) * 2010-03-18 2011-10-06 Sharp Corp 導電性窒化シリコン膜、導電性窒化シリコン膜積層体、およびそれらの製造方法、ならびに光電変換装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5445699A (en) * 1989-06-16 1995-08-29 Tokyo Electron Kyushu Limited Processing apparatus with a gas distributor having back and forth parallel movement relative to a workpiece support surface
JP2011198920A (ja) * 2010-03-18 2011-10-06 Sharp Corp 導電性窒化シリコン膜、導電性窒化シリコン膜積層体、およびそれらの製造方法、ならびに光電変換装置

Also Published As

Publication number Publication date
JPH0587970B2 (enExample) 1993-12-20

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