JPS6153718A - Amorphous silicon manufacturing device - Google Patents

Abstract

PURPOSE:To form an amorphous silicon film in succession for a long time and to improve mass productivity by providing a translucent glass plate moving with a substrate between the substrate and a light source radiating ultraviolet rays. CONSTITUTION:After plural unit 8 are accomodated in a film forming chamber 10 of an amorphous silicon manufacturing device, an amorphous silicon film is formed on a substrate 1 on the unit 8. After the substrate 1 is supplied from a load chamber 11 connecting with this film forming chamber 10, the substrate 1 forming a film is accomodated into an unload chamber 12. The unit 8 accomodated in this film forming chamber 10 is mounted on a conveyor 13 and carried to an arrow A direction. After a transparent window 14 of quartz glass is provided in a predetermined space in the bottom of the film forming chamber 10, a mercury lamp 15 is also arranged facing the transparent window 14. After the substrate 1 is carried with the conveyer 13 and the ultraviolet rays 7 is irradiated to the film forming chamber 10 from the mercury lamp 15, the amorphous silicon film are formed in succession and mass productivity is improved.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention provides an amorphous silicon film 9.
This article relates to an amorphous silicon manufacturing apparatus suitable for film formation.

[Background of the invention]

The mainstream method for forming amorphous silicon films used in amorphous silicon solar cells, etc. is the plasma CVD method using monosilane gas or disilane gas. It was announced at the Tohoku University Faculty of Liberal Arts held from September 25th to 28th, 2017, and the Nohikari CVD method is attracting attention. In this photo-CVD method, an amorphous silicon film can be formed by fully irradiating ultraviolet rays onto disilane gas or mono-7-lane gas sensitized with mercury vapor. Therefore, since no plasma is generated, there is no sputtering damage to the amorphous silicon film, there is less contamination of the amorphous silicon film that causes spatter on the inner wall of the container of the sputtering device, which can cause deterioration of the film quality, and there is no need for a three-chamber separation system. also has good reproducibility, pi
n diode can be obtained. On the other hand, since the raw material gas is decomposed by light, an amorphous silicon film is deposited in the area corresponding to the light path, which rarely causes the problem that the thickness of the amorphous silicon film obtained is limited. . That is, when a substrate to deposit an amorphous silicon film is placed in a vacuum chamber and a mercury lamp source is irradiated from outside a transparent quartz glass window provided in the chamber, the aforementioned source gas introduced into the chamber is It is decomposed and an amorphous silicon film is deposited.

However, in such an amorphous silicon manufacturing apparatus, amorphous silicon is deposited on a substrate placed in a chamber and on the inner surface of a quartz glass window. As a result, the transmittance of ultraviolet rays decreases due to the deposition of amorphous silicon on the inner surface of the quartz glass window, and the rate of deposition of the amorphous silicon film on the substrate decreases. It will be stopped. A problem like this? What can be done to renovate the inner surface of a quartz glass window is fluorine-based oil, such as fan purine oil? However, it is not perfect and continuous film formation over a long period of time is not possible. For this reason, it has been extremely difficult to apply the photo-CVD method to mass production.

□) [Objective of the Invention] Therefore, the present invention has been made in view of the above-mentioned problems, and its purpose is to continuously form an amorphous silicon film for a long period of time by the original CVD method. Our goal is to provide amorphous silicon production equipment that makes it possible.

[Summary of the Invention] In order to achieve the above object, the amorphous silicon manufacturing apparatus according to the present invention is capable of producing a new quartz glass window that does not have an amorphous silicon film attached to it by transporting it together with a quartz glass window metal substrate that completely transmits ultraviolet rays. This structure uses gold.

[Embodiments of the invention]

Next, an embodiment of the present invention using drawing sound? Explain in detail.

FIGS. 1(a) and 1(b) are perspective views showing the assembly of a substrate holder and a quartz glass plate for use in an amorphous silicon manufacturing apparatus according to the present invention.

First, in the same figure (a), 1 is a substrate on which an amorphous silicon film is formed, 2 is a substrate holder on which a plurality of substrates are mounted, 3 is a transparent plate made of quartz glass arranged opposite to the substrate holder 2, and 4 is a transparent plate made of quartz glass. There is a support rod made of stainless steel or Teflon CXI that fully supports and fixes the substrate holder 2 and transparent plate 3. Further, instead of this support plate 4, a support plate 5 covering all four sides may be provided as shown in FIG. Openings 6 are provided on four sides, and ultraviolet rays 7 are made to enter from the transparent plate 3 side.

A plurality of 8-kane pieces of 48 units are prepared in this way.

FIG. 2 is an example of an amorphous silicon manufacturing apparatus according to the present invention. A schematic bottom view of the main parts is shown.

In the figure, 10 is a film forming chamber in which a plurality of the above-described units 8 are housed and the entire amorphous silicon film is formed on the substrate 1, and 11 is a film forming chamber connected to the film forming chamber 10 and in which the amorphous silicon is spread on the unformed substrate 1 in the assembly unit. The loading chamber 12 is connected to the film forming chamber 1° and is an unloading chamber 12 which accommodates the substrate 1 on which the amorphous silicon group is formed. Therefore, the plurality of units 8 housed in the film forming chamber 10 are mounted on the belt conveyor 13 and are configured to be sequentially transported in the direction A indicated by the arrow at a predetermined speed. Reference numeral 14 denotes a transparent window made of a quartz glass plate, which has openings at predetermined intervals on the bottom surface of the film forming chamber 10, and is arranged so as to completely hermetically seal the opening. Reference numeral 15 denotes a mercury lamp arranged opposite to the transparent window 14. Out.

In this configuration, the units 8 on which the substrate 1 is mounted in the load chamber 11 are sequentially transported into the deposition chamber 10, and after the interior of the deposition chamber 10 is brought to a high vacuum, monosilane gas saturated with mercury vapor is transferred. Alternatively, a predetermined amount of raw material gas such as disilane gas is introduced. Next, all mercury lamps 15 are turned on to generate all 7 ultraviolet rays, and the ultraviolet rays are transmitted to the transparent window 14. By transmitting light through the transparent plate 3 of the unit 8 and irradiating the substrate 1, the source gas is decomposed and an amorphous silicon film is formed on the substrate 1. When doping amorphous silicon, a trace amount of phosphine gas or diborane gas may be mixed. In this case, if nitrogen gas or ammonia gas is completely mixed in as a doping gas, a silicon nitride film will be formed, and if all nitrogen gas or ammonia gas is mixed in, an amorphous silicon carbon film will be obtained.

According to this innovation, the active species generated in the unit γ transported into the bottom membrane chamber 10 are SiH, 5iH.
z, SiH3 is obstructed by the transparent plate 3 of the unit 8 when reaching the transparent window 14 in the film forming chamber 10, so that the transparent window 14 is not contaminated. In this case, amorphous silicon is deposited on the transparent plate 3 of the unit 8, but since the amorphous silicon film deposited on the substrate 1 has a thickness of about 5000 Å, there is no radius.

In addition, if the thickness of the deposited film is to be reduced, the above-mentioned Fuonpurin oil kU (kll) may be applied thinly to the open plate 3 (kll) to prevent the deposition of the amorphous silicon film. 1 film forming chamber 10
Doping silicon nitride film or amorphous silicon film with #
Although we have explained the case where the entire undoped film is formed, is it possible to use multiple types of gas in the film forming chamber 10? The film forming chamber 10 depends on the type of film to be deposited depending on the gate pulp supplied.
It may be completely divided. Furthermore, if the unit 8 shown in FIG. 1(b) is used to completely divide the film forming chamber 10, the film chamber 10 can be divided without using gate pulp.

Figure 3 shows its structure, and in the figure,
#: Partition plates 16 are all provided on the inner wall surface of the film forming chamber 10, and three chambers 10a, 10 can accommodate all the units 8 in this film forming chamber 10.
Divide into b and 10c. In this case, this partition plate 16
is made of flexible rubber, and its tip is formed so as to be in contact with the outer surface of the unit 8, so that gas from a different tumor does not mix between adjacent chambers. According to such a configuration, even if gases having different compositions flow into each unit 8, the partition plate 16 completely prevents the gas from diffusing, and the film forming chamber 10 can be divided into three parts.

In the above-mentioned embodiment, the unit 8 explains a system in which the quartz glass transparent plate 3 and the substrate 1 are conveyed in one body. Of course, the same effect can also be obtained. In this case, especially if the transport speed of the transparent plate 3 is made faster than the transport speed of the substrate 1, the upper limit of the film thickness of the amorphous silicon film can be increased.

〔Effect of the invention〕

As explained above, according to the present invention, it is possible to continuously form an amorphous silicon film over a long period of time by the photo-CVD method, and extremely excellent effects such as extremely easy mass production can be obtained.

[Brief explanation of the drawing]

FIGS. 1(a) and 1(b) are perspective views showing the assembly 22 used for the amorphous silicon manufacturing apparatus according to the present invention,
FIG. 2 is a schematic diagram of the essential parts showing one embodiment of an amorphous silicon manufacturing apparatus according to the present invention, and FIG. 3 is a schematic diagram of the essential parts showing another embodiment of the invention. 1st race...board, 2nd...board holder, 3rd...
Transparent plate, 4...-support rod, 5...support plate, 6...
...Aperture, 7...Ultraviolet light, 8*@@11 units,
10.10a, 10b, 10c...film formation chamber, 11.
... Loading chamber, 12... Unloading g, 13...
...Belt conveyor, 14...Transparent window, 15...
・Mercury lamp, Figure 1 (b)

Claims (1)

[Claims] 1. In an amorphous silicon manufacturing apparatus that irradiates ultraviolet rays into a raw material gas atmosphere to form an amorphous silicon film on a substrate, the device moves together with the substrate between the substrate and a light source that emits ultraviolet rays. An amorphous silicon manufacturing device characterized by being provided with a translucent glass plate. 2. The amorphous silicon manufacturing apparatus according to claim 1, wherein the translucent glass plate and the substrate are integrally constructed.