JPH04288881A - Method and device for manufacturing solar cell - Google Patents

Method and device for manufacturing solar cell

Info

Publication number
JPH04288881A
JPH04288881A JP3052566A JP5256691A JPH04288881A JP H04288881 A JPH04288881 A JP H04288881A JP 3052566 A JP3052566 A JP 3052566A JP 5256691 A JP5256691 A JP 5256691A JP H04288881 A JPH04288881 A JP H04288881A
Authority
JP
Japan
Prior art keywords
flexible substrate
tray
substrate
tension
edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3052566A
Other languages
Japanese (ja)
Inventor
Makoto Toda
誠 戸田
Kazuhiro Hata
和弘 畑
Seiki Okino
沖野 誠機
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Central Glass Co Ltd
Original Assignee
Central Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Glass Co Ltd filed Critical Central Glass Co Ltd
Priority to JP3052566A priority Critical patent/JPH04288881A/en
Publication of JPH04288881A publication Critical patent/JPH04288881A/en
Pending legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/548Amorphous silicon PV cells

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Feeding Of Workpieces (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To eliminate looseness of a substrate due to self-weight and thermal expansion and a uniform film to be formed on a tensioned surface by providing a tension means at an edge of a flexible substrate which is placed on a tray for giving a tension constantly. CONSTITUTION:A flexible substrate 11 is fixed to a periphery on a tray 10 by holding of a retention member which is screwed by a bolt and a tension is given to the flexible substrate 11 by a tension means 14 which is adjacent to the retention means. The tension means 14 is configured so that a hinge member which can be rocked freely is provided at a retention member at a side which is opposite to the retention member. The hinge member moves downward following loosening of the flexible substrate 11 is inclined and the move operates as a tension for pulling the edge of the flexible substrate 11 outward. The flexible substrate 11 is constantly in tensioned state and an amorphous silicon layer is formed while retaining the state constantly. After the film is formed, move is made to another film-forming chamber 1 but a uniform layer is formed by forming film on the flexible substrate 11 which is constantly in tensioned state.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、放電により薄膜を形成
するプラズマCVD、スパッタリング法等に関し、可撓
性基板上に例えば非晶質シリコン層を堆積する薄膜太陽
電池の製造に係るものである。
[Field of Industrial Application] The present invention relates to plasma CVD, sputtering, etc. for forming thin films by discharge, and relates to the production of thin film solar cells in which, for example, an amorphous silicon layer is deposited on a flexible substrate. .

【0002】0002

【従来の技術】薄膜太陽電池の製造装置として、例えば
特公昭62−43554号公報には、帯状基板を該基板
の長手方向に連続的に進行させるように該基板を連続的
に移動させる基板進行装置と、該進行装置の制御下で長
手方向に連続的に動いている帯状基板の一方の表面上に
第一のアモルフアス半導体層を連続的にグロー放電堆積
させるべく、帯状基板の進行路に沿って設けられた第一
のグロー放電堆積室を有する第一のグロー放電堆積装置
と、前記進行装置の制御下で帯状基板が連続的に通過せ
しめられるスリットを介して第二のグロー放電堆積装置
に連通されたアモルフアス太陽電池の製造装置を開示し
、さらに基板はステンレス鋼もしくはアルミニウムのよ
うな金属またはポリマーで有る場合は大きなロールのよ
うな半連続供給源から供給できると記載されている。
2. Description of the Related Art As a manufacturing apparatus for thin film solar cells, for example, Japanese Patent Publication No. 62-43554 discloses a substrate advancing system that continuously moves a strip-shaped substrate so as to continuously advance the substrate in the longitudinal direction of the substrate. and a first amorphous semiconductor layer along the travel path of the strip substrate to continuously glow discharge deposit a first amorphous semiconductor layer on one surface of the strip substrate that is continuously moving in the longitudinal direction under the control of the device and the advancement device. A first glow discharge deposition device having a first glow discharge deposition chamber provided in An apparatus for manufacturing a connected amorphous solar cell is disclosed, and it is further described that if the substrate is a metal or polymer, such as stainless steel or aluminum, it can be supplied from a semi-continuous source, such as a large roll.

【0003】また特開昭62−25465号公報には、
例えば剛性なガラス板基板を載せたトレイを、予備加熱
室、p層、i層、n層の各反応室、取り出し室の順に搬
送しながら基板上に非晶質シリコン層を堆積する薄膜太
陽電池の製造装置が開示されている。
[0003] Also, in Japanese Patent Application Laid-Open No. 62-25465,
For example, a thin film solar cell in which an amorphous silicon layer is deposited on the substrate while a tray carrying a rigid glass plate substrate is transported through a preheating chamber, reaction chambers for p-layer, i-layer, and n-layer, and a removal chamber in that order. A manufacturing apparatus is disclosed.

【0004】0004

【発明が解決しようとする問題点】特公昭62−435
54号公報に記載された前者のものは、大面積の可撓性
基板を使用して生産性の高いロール・ツー・ロール方式
の製造装置であるが、帯状基板の連続搬送により大気あ
るいは隣合う堆積の反応室間の漏洩があり、高効率の太
陽電池の製作が難しく、さらに連続製造中にトラブルを
生ずるとライン中の基板を全て廃棄せざるを得ないため
低歩留となる欠点があった。
[Problems to be solved by the invention] Japanese Patent Publication No. 62-435
The former described in Publication No. 54 is a highly productive roll-to-roll manufacturing device that uses a large-area flexible substrate. There is leakage between the deposition reaction chambers, making it difficult to manufacture highly efficient solar cells.Furthermore, if a problem occurs during continuous production, all the substrates in the line must be discarded, resulting in low yields. Ta.

【0005】特開昭62−25465号公報の多室分離
方式による後者のものは、基板を載せたトレイが非連続
で逐次反応室内に搬送移動するため、反応室の間仕切り
が完全となり前者のようなトラブルは解消されるが、成
膜領域内のスパッタあるいは真空蒸着領域での開口され
たトレイ上に可撓性基板を倒置するアップデポジション
あるいは垂直のサイドデポジションにおいては基板の自
重や熱膨張による弛みを起こし、大面積において均一な
膜を形成することは難しいという問題があり、成膜領域
内の下面に底板を有するトレイを配置し、該トレイ上に
可撓性基板を載置するダウンデポジションでは弛緩は解
消するが、成膜時の気相分解物質、すなわち粒子の落下
、あるいは埃の落下による不均一な成膜、またピンホー
ル、粒子の巻き込みによる絶縁、もしくは短絡現象が発
生する等の問題があった。
In the latter method using the multi-chamber separation method disclosed in Japanese Patent Application Laid-Open No. 62-25465, the trays carrying the substrates are transported discontinuously and sequentially into the reaction chamber, so that the reaction chambers are completely partitioned, and unlike the former method, However, in up-deposition in which a flexible substrate is placed upside down on an open tray in a sputtering or vacuum deposition area in a film-forming area, or in vertical side-deposition, problems caused by the weight and thermal expansion of the substrate can be solved. There is a problem that it is difficult to form a uniform film over a large area due to loosening. Although the relaxation is resolved in the position, the vapor phase decomposition substances during film formation, such as falling particles or dust, may cause non-uniform film formation, pinholes, insulation due to particle entrainment, or short circuit phenomena. There was a problem.

【0006】[0006]

【問題点を解決するための手段】本発明はかかる問題点
に鑑みて多室分離方式において可撓性基板に張力を付与
し、均一な成膜を形成することができる薄膜太陽電池の
製造方法とその装置を提供することを目的として、薄膜
形成原料ガスを導入、かつ電極に電気的エネルギーを加
え放電させてプラズマ状態の各成膜室に基板を載せたト
レイを順次搬送し、該基板の被着面に薄膜を被着せしめ
る太陽電池の製造方法において、前記トレイに可撓性基
板を載置し、該基板の端縁側に緊張手段を配設して該基
板に張力を付与せしめる太陽電池の製造方法と、薄膜形
成原料ガスを導入、かつ電極に電気的エネルギーを加え
て放電させてプラズマ状態の各成膜室に基板を載せたト
レイを順次搬送し、該基板の被着面に薄膜を被着せしめ
る太陽電池の製造装置において、前記トレイに可撓性基
板を載置し、該トレイの端縁に前記可撓性基板を固定す
る保持部材と、該保持部材に隣接して前記可撓性基板に
張力を付与せしめる緊張手段とを配設する太陽電池の製
造装置を提供する。
[Means for Solving the Problems] In view of the above problems, the present invention provides a method for manufacturing a thin film solar cell that can apply tension to a flexible substrate in a multi-chamber separation method and form a uniform film. With the aim of providing a thin film forming raw material gas and applying electric energy to the electrodes to cause discharge, a tray carrying a substrate is sequentially transported to each film forming chamber in a plasma state, and the substrate is heated. A method of manufacturing a solar cell in which a thin film is applied to an adhering surface, wherein a flexible substrate is placed on the tray, and a tensioning means is provided on the edge side of the substrate to apply tension to the substrate. A thin film forming raw material gas is introduced, electrical energy is applied to the electrodes to cause discharge, and a tray carrying a substrate is sequentially transported to each film forming chamber in a plasma state, and a thin film is formed on the adhered surface of the substrate. In the solar cell manufacturing apparatus, a flexible substrate is placed on the tray, a holding member for fixing the flexible substrate to an edge of the tray, and a holding member for fixing the flexible substrate to an edge of the tray, and a holding member for fixing the flexible substrate to an edge of the tray, and A solar cell manufacturing apparatus is provided that includes a tensioning means for applying tension to a flexible substrate.

【0007】本発明は、プラズマCVD法のみならずス
パッタリング法や真空蒸着法にも適用することができ、
可撓性基板とは、10〜100 μm程度の厚みのステ
ンレスやアルミニユム、ニッケル、チタン等の金属板、
また厚みが1μm〜1mm程度の高分子フイルム等が該
当し、トレイ上に可撓性基板を倒置するアップデポジシ
ョンで成膜するものである。
The present invention can be applied not only to plasma CVD methods but also to sputtering methods and vacuum evaporation methods.
A flexible substrate is a metal plate made of stainless steel, aluminum, nickel, titanium, etc. with a thickness of about 10 to 100 μm,
Further, a polymer film having a thickness of approximately 1 μm to 1 mm is applicable, and is formed by up-deposition in which a flexible substrate is placed upside down on a tray.

【0008】[0008]

【作用】保持部材により周端を固定して各成膜室等に搬
入するトレイ上の可撓性基板は、加熱や成膜形成時にお
いての雰囲気温度の上昇により膨張しその自重により弛
緩するが、該保持部材に隣接して該基板に張力を付与す
る緊張手段を設けることにより、その張力は弛緩を相殺
して常時緊張を保ち、成膜領域内での温度に追従しての
緊張により均一な成膜を形成する。
[Operation] The flexible substrate on the tray, which is transported into each film forming chamber with its peripheral edge fixed by a holding member, expands due to heating and the rise in atmospheric temperature during film forming, and loosens due to its own weight. By providing a tensioning means that applies tension to the substrate adjacent to the holding member, the tension is always maintained by offsetting the relaxation, and is uniform due to the tension following the temperature in the film forming area. Forms a thick film.

【0009】[0009]

【実施例】以下、本発明の実施例を図示に基づき詳細に
説明する。図1は本発明の装置を切断した横断面の概略
説明図を示し、図2は図1において可撓性基板をセット
したトレイの平面図を示し、図3は図2のA−A部位の
断面図を示し、図4は他の実施例を示す断面図である。
Embodiments Hereinafter, embodiments of the present invention will be explained in detail based on the drawings. FIG. 1 shows a schematic cross-sectional view of the device of the present invention, FIG. 2 shows a plan view of the tray on which the flexible substrate is set in FIG. 1, and FIG. 3 shows a section A-A in FIG. 2. FIG. 4 is a cross-sectional view showing another embodiment.

【0010】互いに隔離することができる図示されない
並設された反応室でp層、i層、n層の非晶質シリコン
を基板11上に堆積せしめるが、例えばi層の反応成膜
室1は外壁2に囲まれた真空容器内に上部電極3と下部
電極4が平行に配設され、上部電極3は通常のアース電
位5に接続、下部電極4は高周波電源6の負電位に接続
し、外部から原料ガスを導入するパイプ7と一定の真空
度を保持する排気用のパイプ7’を設ける。
P-layer, i-layer, and n-layer amorphous silicon are deposited on the substrate 11 in parallel reaction chambers (not shown) that can be isolated from each other. For example, the reaction deposition chamber 1 for the i-layer is An upper electrode 3 and a lower electrode 4 are arranged in parallel in a vacuum container surrounded by an outer wall 2, the upper electrode 3 is connected to a normal earth potential 5, the lower electrode 4 is connected to a negative potential of a high frequency power source 6, A pipe 7 for introducing source gas from the outside and an exhaust pipe 7' for maintaining a constant degree of vacuum are provided.

【0011】上部電極3と下部電極4との成膜領域内の
両脇側には、ローラーコンベア8を配設し、該コンベア
上には方形で周囲の断面がL形で底面に前記ローラーコ
ンベア8と当接するローラー溝9を削成した中空なトレ
イ10を介して可撓性基板11を載置するが、該トレイ
はローラーコンベア8の駆動と該ローラーに直交して並
設するガイドロール12とにより走行自在となる。
A roller conveyor 8 is disposed on both sides of the film forming area of the upper electrode 3 and the lower electrode 4, and the roller conveyor 8 is rectangular in shape and has an L-shaped peripheral cross section on the bottom surface. A flexible substrate 11 is placed on a hollow tray 10 with a roller groove 9 cut in contact with the roller conveyor 8. This makes it possible to run freely.

【0012】可撓性基板11は、トレイ10上の周辺に
ボルト18で螺着する保持部材13の挟持により固定せ
しめられ、また該保持部材に隣接した緊張手段14で前
記可撓性基板11に張力を付与せしめるが、該緊張手段
の構成は対向する保持部材13の対向側で該保持部材に
揺動自在なヒンジ部材15を添設するものである。保持
部材13は中空なトレイ10に合わせて方形状にし、各
辺にヒンジ部材15を設けるようにしてもよく、または
保持部材13の2辺をL状に接合したもの、あるいは各
辺が各々独立した保持部材13としてその部材にヒンジ
部材15を添設してもよい。
The flexible substrate 11 is fixed by holding a holding member 13 screwed onto the periphery of the tray 10 with bolts 18, and tension means 14 adjacent to the holding member are used to tighten the flexible substrate 11. The tensioning means is configured such that a swingable hinge member 15 is attached to the opposing holding member 13 on the opposite side thereof. The holding member 13 may be made into a rectangular shape to match the hollow tray 10, and a hinge member 15 may be provided on each side, or the two sides of the holding member 13 may be joined in an L shape, or each side may be independent. As the holding member 13, a hinge member 15 may be attached to the holding member 13.

【0013】図4に示すように他の緊張手段14として
は、可撓性基板11の端縁を支持するトレイ10のL形
断面にU字状の溝部16を周設し、該溝部に可撓性基板
11を介在して遊嵌する太さのウエイト部材17を配設
するが、溝部16における突き合わせ部分の四隅にはウ
エイト部材17を突き合わせることなく端部間をバイパ
スして連結して溝部16への嵌入を容易にし、一方可撓
性基板11の周縁とトレイ10との固定は予めL形断面
の頂上部19に保持部材13をボルト18で螺着して挟
持する。
As shown in FIG. 4, as another tensioning means 14, a U-shaped groove 16 is provided around the L-shaped cross section of the tray 10 that supports the edge of the flexible substrate 11, and a flexible groove is provided in the groove. A weight member 17 having a thickness that can be loosely fitted with the flexible substrate 11 interposed is provided, but the weight member 17 is connected to the four corners of the abutting portion of the groove 16 by bypassing the end portions without abutting each other. The flexible substrate 11 is easily fitted into the groove 16, and the peripheral edge of the flexible substrate 11 and the tray 10 are fixed by screwing the holding member 13 to the top portion 19 of the L-shaped cross section in advance with bolts 18 and holding the flexible substrate 13 therebetween.

【0014】保持部材13、ヒンジ部材15、ウエイト
部材17等の緊張手段の材質はトレイ10と同材質のス
テンレスが好ましい。以下、本発明の作用を説明する。
The tension means such as the holding member 13, the hinge member 15, and the weight member 17 are preferably made of stainless steel, which is the same material as the tray 10. The operation of the present invention will be explained below.

【0015】トレイ10上に可撓性基板11を載置し、
引き続き該基板の周端縁上に揺動自在なヒンジ部材15
を添設した保持部材13を重置し、該保持部材をボルト
18を介して押圧固定したトレイ10上の可撓性基板1
1は、成膜室1あるいはその前後に配設する図示されな
い予備加熱室、あるいは取り出し室内に連設するローラ
ーコンベア8上にトレイ10と共に載置せしめられ、該
ローラーコンベアの駆動とガイドーラー12の案内によ
り搬送移動する。トレイ10上の可撓性基板11は、例
えば成膜室1の上下電極3、4間の成膜領域に到達する
とパイプ7より反応ガスを導入し、下部電極4に高周波
電源6より高周波電力を加えてプラスマを発生させると
成膜領域の雰囲気温度は上昇して可撓性基板11は膨張
しトレイ10の中空側に弛緩するが、保持部材13に片
持ち状に接合してトレイ10の中空側に揺動自在なヒン
ジ部材15は可撓性基板11の弛緩に追従して下方へ回
動して傾き、その作動は可撓性基板11の端縁を外方へ
引っ張る張力として作用し、該可撓性基板は常時緊張し
た状態となり、その状態を常時保持しつつ非晶質シリコ
ン層を形成する。成膜後他の成膜室1に走行移動するが
、該室においても常に緊張状態にある可撓性基板11に
他の成膜を施すことにより均一な成層を形成するもので
ある。
A flexible substrate 11 is placed on the tray 10,
Subsequently, a swingable hinge member 15 is placed on the peripheral edge of the substrate.
The flexible substrate 1 is placed on a tray 10 on which a holding member 13 attached with a
1 is placed together with a tray 10 on a roller conveyor 8 connected to the film forming chamber 1 or a preheating chamber (not shown) disposed before and after the film forming chamber 1, or a take-out chamber, and drives the roller conveyor and guides the guide roller 12. Transport and move. When the flexible substrate 11 on the tray 10 reaches the film forming area between the upper and lower electrodes 3 and 4 of the film forming chamber 1, for example, a reactive gas is introduced from the pipe 7, and high frequency power is applied to the lower electrode 4 from the high frequency power source 6. In addition, when plasma is generated, the ambient temperature in the film-forming region rises, and the flexible substrate 11 expands and relaxes toward the hollow side of the tray 10. However, it is joined to the holding member 13 in a cantilevered manner and closes the hollow side of the tray 10. The hinge member 15, which can freely swing to the side, rotates and tilts downward following the relaxation of the flexible substrate 11, and its operation acts as a tension force that pulls the edge of the flexible substrate 11 outward. The flexible substrate is always in a tense state, and an amorphous silicon layer is formed while maintaining this state at all times. After the film is formed, it travels to another film forming chamber 1, and even in that room, another film is formed on the flexible substrate 11 which is always under tension, thereby forming a uniform layer.

【0016】図4に示す緊張手段14は、トレイ10の
周縁に設けた溝部16に可撓性基板11を介してウエイ
ト部材17を嵌入せしめるが、予め該溝部の深さは可撓
性基板11の弛み代を吸収する深さとしていることと、
ウエイト部材17の自重による溝部16内の降下により
可撓性基板11の周縁を引き寄せ、弛緩した可撓性基板
11を緊張せしめるものである。
In the tensioning means 14 shown in FIG. 4, a weight member 17 is fitted into a groove 16 provided at the periphery of the tray 10 via a flexible substrate 11. The depth is set to absorb the slack of the
As the weight member 17 descends in the groove 16 due to its own weight, it draws the peripheral edge of the flexible substrate 11 and tensions the relaxed flexible substrate 11.

【0017】緊張手段14は、ヒンジ部材15、ウエイ
ト部材17のいずれもその自重を用いて引っ張り作用を
付与するが、自重に代わりスプリングバネを用いて張力
を付与するもの、例えばトレイ10の周端縁に複数個の
スプリングからなるバネ材を固定し、該スプリングを介
して可撓性基板11の端縁を挟持するものや、平板状の
部材に被覆する可撓基板11の端部間にスプリングバネ
を挿着して張力を付与したものをトレイ10上に載置し
てもよい。
The tensioning means 14 uses the weight of each of the hinge member 15 and the weight member 17 to apply tension, but instead of using its own weight, the tensioning means 14 uses a spring to apply tension, for example, the peripheral end of the tray 10. A spring material consisting of a plurality of springs is fixed to the edge and the edge of the flexible substrate 11 is held between the springs, or a spring material is used between the edges of the flexible substrate 11 covered on a flat member. A spring may be inserted to apply tension and then placed on the tray 10.

【0018】上述の実施例は、プラズマCVD法を記載
したが、他のスパッタリング法や真空蒸着法にも適用で
きることは言うまでもない。
[0018] Although the above embodiment describes the plasma CVD method, it goes without saying that other sputtering methods and vacuum evaporation methods can also be applied.

【0019】[0019]

【発明の効果】本発明は、トレイ上に載置する可撓性基
板の端縁に緊張手段を設けて常時張力を付与するように
したことより、自重や熱膨張による基板の弛緩を無くし
、緊張した面に均一な成膜を形成することが可能となり
、分離形成方式おいて基板の軽量化に伴いトレイ、ロー
ラーコンベアへの負荷の軽減等により大面積でフレキシ
ブル、さらに高効率の太陽電池を製造することができる
Effects of the Invention The present invention provides tensioning means at the edges of the flexible substrate placed on the tray to constantly apply tension, thereby eliminating the loosening of the substrate due to its own weight and thermal expansion. It is now possible to form a uniform film on a tense surface, and with the separation formation method, the weight of the substrate is reduced and the load on trays and roller conveyors is reduced, making it possible to create large-area, flexible, and more efficient solar cells. can be manufactured.

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】本発明の装置を切断した横断面の概略説明図。FIG. 1 is a schematic cross-sectional view of a device of the present invention.

【図2】図1において可撓性基板をセットしたトレイの
平面図。
FIG. 2 is a plan view of the tray in which the flexible substrate is set in FIG. 1;

【図3】図2のA−A部位の断面図。FIG. 3 is a sectional view taken along line AA in FIG. 2;

【図4】他の実施例を示す断面図である。FIG. 4 is a sectional view showing another embodiment.

【符号の説明】[Explanation of symbols]

1・・・成膜室        10・・・トレイ  
      11・・・可撓性基板 13・・・保持部材      14・・・緊張手段 
     15・・・ヒンジ部材 17・・・ウエイト部材
1... Film forming chamber 10... Tray
11... Flexible substrate 13... Holding member 14... Tensioning means
15... Hinge member 17... Weight member

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】薄膜形成原料ガスを導入、かつ電極に電気
的エネルギーを加え放電させてプラズマ状態の各成膜室
に基板を載せたトレイを順次搬送し、該基板の被着面に
薄膜を被着せしめる太陽電池の製造方法において、前記
トレイに可撓性基板を載置し、該基板の端縁側に緊張手
段を配設することを特徴とする太陽電池の製造方法。
[Claim 1] A thin film forming raw material gas is introduced, electric energy is applied to the electrodes to cause discharge, and a tray carrying a substrate is sequentially transported to each film forming chamber in a plasma state, and a thin film is formed on the adhering surface of the substrate. 1. A method for manufacturing a solar cell in which a flexible substrate is placed on the tray, and a tensioning means is provided on an edge side of the substrate.
【請求項2】薄膜形成原料ガスを導入、かつ電極に電気
的エネルギーを加えて放電させてプラズマ状態の各成膜
室に基板を載せたトレイを順次搬送し、該基板の被着面
に薄膜を被着せしめる太陽電池の製造装置において、前
記トレイに可撓性基板を載置し、該トレイの端縁に前記
可撓性基板を固定する保持部材と、該保持部材に隣接し
て前記可撓性基板に張力を付与せしめる緊張手段とを配
設することを特徴とする太陽電池の製造装置。
2. A thin film forming raw material gas is introduced, electric energy is applied to the electrodes to cause discharge, and the trays carrying the substrates are sequentially conveyed to each film forming chamber in a plasma state, and a thin film is formed on the adhering surface of the substrate. In the solar cell manufacturing apparatus, a flexible substrate is placed on the tray, a holding member for fixing the flexible substrate to an edge of the tray, and a holding member for fixing the flexible substrate to an edge of the tray, and a holding member for fixing the flexible substrate to an edge of the tray, and 1. A solar cell manufacturing apparatus, comprising: a tensioning means for applying tension to a flexible substrate.
JP3052566A 1991-03-18 1991-03-18 Method and device for manufacturing solar cell Pending JPH04288881A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3052566A JPH04288881A (en) 1991-03-18 1991-03-18 Method and device for manufacturing solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3052566A JPH04288881A (en) 1991-03-18 1991-03-18 Method and device for manufacturing solar cell

Publications (1)

Publication Number Publication Date
JPH04288881A true JPH04288881A (en) 1992-10-13

Family

ID=12918353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3052566A Pending JPH04288881A (en) 1991-03-18 1991-03-18 Method and device for manufacturing solar cell

Country Status (1)

Country Link
JP (1) JPH04288881A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007088408A (en) * 2005-09-24 2007-04-05 Applied Materials Gmbh & Co Kg Substrate carrier
WO2009158548A2 (en) * 2008-06-25 2009-12-30 Robert Stancel Tensioned mounting of solar panels
WO2010054274A2 (en) * 2008-11-06 2010-05-14 Robert Stancel Tensioned mounting of solar panels
JP2011518942A (en) * 2007-10-17 2011-06-30 ルション、ヤン Improved solution deposition assembly
WO2016039031A1 (en) * 2014-09-08 2016-03-17 シャープ株式会社 Device and method for transferring solar cell module
CN112959794A (en) * 2021-03-31 2021-06-15 营口金辰太阳能设备有限公司秦皇岛分公司 Movable pressure frame type laminating machine and rubber plate pressure type laminating method

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007088408A (en) * 2005-09-24 2007-04-05 Applied Materials Gmbh & Co Kg Substrate carrier
JP4607024B2 (en) * 2005-09-24 2011-01-05 アプライド マテリアルズ ゲーエムベーハー ウント ツェーオー カーゲー Substrate carrier
JP2011518942A (en) * 2007-10-17 2011-06-30 ルション、ヤン Improved solution deposition assembly
WO2009158548A2 (en) * 2008-06-25 2009-12-30 Robert Stancel Tensioned mounting of solar panels
WO2009158548A3 (en) * 2008-06-25 2010-05-27 Robert Stancel Tensioned mounting of solar panels
WO2010054274A2 (en) * 2008-11-06 2010-05-14 Robert Stancel Tensioned mounting of solar panels
WO2010054274A3 (en) * 2008-11-06 2010-07-15 Robert Stancel Tensioned mounting of solar panels
WO2016039031A1 (en) * 2014-09-08 2016-03-17 シャープ株式会社 Device and method for transferring solar cell module
JP2016055962A (en) * 2014-09-08 2016-04-21 シャープ株式会社 Transportation device and transportation method for solar cell module
CN112959794A (en) * 2021-03-31 2021-06-15 营口金辰太阳能设备有限公司秦皇岛分公司 Movable pressure frame type laminating machine and rubber plate pressure type laminating method
CN112959794B (en) * 2021-03-31 2023-08-29 秦皇岛金辰太阳能设备有限公司 Movable press frame type laminating machine and glue plate press type laminating method

Similar Documents

Publication Publication Date Title
US5288329A (en) Chemical vapor deposition apparatus of in-line type
US5378639A (en) Method for manufacturing a thin-film photovoltaic conversion device
US5248349A (en) Process for making photovoltaic devices and resultant product
AU2008271675A1 (en) Treatment system for flat substrates
US5569502A (en) Film formation apparatus and method for forming a film
JPS6342115A (en) Manufacture of film
JPH04288881A (en) Method and device for manufacturing solar cell
JP2002212744A (en) Device for manufacturing thin film semiconductor
US6470823B2 (en) Apparatus and method for forming a deposited film by a means of plasma CVD
JPS5914633A (en) Plasma cvd apparatus
KR101210533B1 (en) thin film solar cell manufacturing equipment
JPS60194077A (en) Apparatus for forming deposited film
JPH11121381A (en) Plasma chemical vapor depositing device
JP2002270600A (en) Plasma cvd apparatus, plasma cvd method and thin film solar cell
JP2001007367A (en) Method and device for manufacturing film solar cell
US6632284B2 (en) Apparatus and method for forming deposited film
JPS59167012A (en) Plasma cvd equipment
JP2001192835A (en) Substrate transfer cart used in in-line type plasma enhanced cvd system
KR100430737B1 (en) An etching treatment equipment for etching the edge surface of wafer
JP2562686B2 (en) Plasma processing device
JPH0436453B2 (en)
JPS5850735A (en) Mass production-type apparatus for thin film formation
KR101780395B1 (en) Tray for supporting substrate and substrate processing apparatus having the same
JP2002270527A (en) Plasma cvd method, plasma cvd device and thin film solar cell
JPH09324275A (en) Plasma cvd device for flexible film