JPS6152986B2 - - Google Patents
Info
- Publication number
- JPS6152986B2 JPS6152986B2 JP53122626A JP12262678A JPS6152986B2 JP S6152986 B2 JPS6152986 B2 JP S6152986B2 JP 53122626 A JP53122626 A JP 53122626A JP 12262678 A JP12262678 A JP 12262678A JP S6152986 B2 JPS6152986 B2 JP S6152986B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- poly
- film
- resistance
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12262678A JPS5550640A (en) | 1978-10-06 | 1978-10-06 | Preparation of semiconductor device |
| US06/078,783 US4309224A (en) | 1978-10-06 | 1979-09-25 | Method for manufacturing a semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12262678A JPS5550640A (en) | 1978-10-06 | 1978-10-06 | Preparation of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5550640A JPS5550640A (en) | 1980-04-12 |
| JPS6152986B2 true JPS6152986B2 (enExample) | 1986-11-15 |
Family
ID=14840611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12262678A Granted JPS5550640A (en) | 1978-10-06 | 1978-10-06 | Preparation of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5550640A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0257476U (enExample) * | 1988-10-21 | 1990-04-25 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5198378A (en) * | 1988-10-31 | 1993-03-30 | Texas Instruments Incorporated | Process of fabricating elevated source/drain transistor |
-
1978
- 1978-10-06 JP JP12262678A patent/JPS5550640A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0257476U (enExample) * | 1988-10-21 | 1990-04-25 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5550640A (en) | 1980-04-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4309224A (en) | Method for manufacturing a semiconductor device | |
| EP0015677B1 (en) | Method of producing semiconductor devices | |
| US4267011A (en) | Method for manufacturing a semiconductor device | |
| US4170492A (en) | Method of selective oxidation in manufacture of semiconductor devices | |
| JPH05109737A (ja) | 薄膜トランジスタの製造方法 | |
| EP0191037A1 (en) | Semiconductor-on-insulator (soi) devices and soi ic fabrication method. | |
| US4551907A (en) | Process for fabricating a semiconductor device | |
| JP3185386B2 (ja) | 半導体装置の製造方法 | |
| JPS6152987B2 (enExample) | ||
| JPS6327858B2 (enExample) | ||
| JP2821628B2 (ja) | 半導体装置の製造方法 | |
| JPS6161268B2 (enExample) | ||
| JPS6231493B2 (enExample) | ||
| JPH06163576A (ja) | 半導体装置の製造方法 | |
| JPH0481327B2 (enExample) | ||
| JPS6327857B2 (enExample) | ||
| JPH088401A (ja) | 半導体装置の製造方法 | |
| US6015728A (en) | Method for fabricating SRAM polyload resistor | |
| JP3385650B2 (ja) | 半導体装置の製造方法 | |
| JPS5974671A (ja) | 半導体装置の製造方法 | |
| JPH0247853B2 (enExample) | ||
| JPS60133740A (ja) | 半導体装置の製造方法 | |
| JPH0391245A (ja) | 薄膜半導体装置とその製造方法 | |
| KR970006255B1 (ko) | 반도체 소자의 트랜지스터 제조방법 | |
| JPS5892266A (ja) | 半導体装置の製造方法 |