JPS6152590B2 - - Google Patents

Info

Publication number
JPS6152590B2
JPS6152590B2 JP54037522A JP3752279A JPS6152590B2 JP S6152590 B2 JPS6152590 B2 JP S6152590B2 JP 54037522 A JP54037522 A JP 54037522A JP 3752279 A JP3752279 A JP 3752279A JP S6152590 B2 JPS6152590 B2 JP S6152590B2
Authority
JP
Japan
Prior art keywords
region
substrate
regions
recesses
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54037522A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55130172A (en
Inventor
Kunihiko Hirashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP3752279A priority Critical patent/JPS55130172A/ja
Publication of JPS55130172A publication Critical patent/JPS55130172A/ja
Publication of JPS6152590B2 publication Critical patent/JPS6152590B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/292—Non-planar channels of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP3752279A 1979-03-29 1979-03-29 Insulated gate field effect transistor Granted JPS55130172A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3752279A JPS55130172A (en) 1979-03-29 1979-03-29 Insulated gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3752279A JPS55130172A (en) 1979-03-29 1979-03-29 Insulated gate field effect transistor

Publications (2)

Publication Number Publication Date
JPS55130172A JPS55130172A (en) 1980-10-08
JPS6152590B2 true JPS6152590B2 (cg-RX-API-DMAC7.html) 1986-11-13

Family

ID=12499869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3752279A Granted JPS55130172A (en) 1979-03-29 1979-03-29 Insulated gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS55130172A (cg-RX-API-DMAC7.html)

Also Published As

Publication number Publication date
JPS55130172A (en) 1980-10-08

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