JPS6151980A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6151980A
JPS6151980A JP59175544A JP17554484A JPS6151980A JP S6151980 A JPS6151980 A JP S6151980A JP 59175544 A JP59175544 A JP 59175544A JP 17554484 A JP17554484 A JP 17554484A JP S6151980 A JPS6151980 A JP S6151980A
Authority
JP
Japan
Prior art keywords
electrode
gate
film
forming
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59175544A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0326538B2 (enrdf_load_stackoverflow
Inventor
Yu Watanabe
祐 渡邊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59175544A priority Critical patent/JPS6151980A/ja
Publication of JPS6151980A publication Critical patent/JPS6151980A/ja
Publication of JPH0326538B2 publication Critical patent/JPH0326538B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP59175544A 1984-08-22 1984-08-22 半導体装置の製造方法 Granted JPS6151980A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59175544A JPS6151980A (ja) 1984-08-22 1984-08-22 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59175544A JPS6151980A (ja) 1984-08-22 1984-08-22 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6151980A true JPS6151980A (ja) 1986-03-14
JPH0326538B2 JPH0326538B2 (enrdf_load_stackoverflow) 1991-04-11

Family

ID=15997931

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59175544A Granted JPS6151980A (ja) 1984-08-22 1984-08-22 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6151980A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01133375A (ja) * 1987-09-23 1989-05-25 Siemens Ag 自己整合ゲートを備えるｍｅｓｆｅｔの製造方法
JPH01171278A (ja) * 1987-12-25 1989-07-06 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH05198598A (ja) * 1992-01-22 1993-08-06 Mitsubishi Electric Corp 化合物半導体装置及びその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57103364A (en) * 1980-12-18 1982-06-26 Nippon Telegr & Teleph Corp <Ntt> Preparation of field-effect trasistor
JPS59114871A (ja) * 1982-12-21 1984-07-03 Toshiba Corp シヨツトキ−ゲ−ト型ＧａＡｓ電界効果トランジスタの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57103364A (en) * 1980-12-18 1982-06-26 Nippon Telegr & Teleph Corp <Ntt> Preparation of field-effect trasistor
JPS59114871A (ja) * 1982-12-21 1984-07-03 Toshiba Corp シヨツトキ−ゲ−ト型ＧａＡｓ電界効果トランジスタの製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01133375A (ja) * 1987-09-23 1989-05-25 Siemens Ag 自己整合ゲートを備えるｍｅｓｆｅｔの製造方法
JPH01171278A (ja) * 1987-12-25 1989-07-06 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH05198598A (ja) * 1992-01-22 1993-08-06 Mitsubishi Electric Corp 化合物半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPH0326538B2 (enrdf_load_stackoverflow) 1991-04-11

Similar Documents

Publication Publication Date Title
JP2778600B2 (ja) 半導体装置の製造方法
US4808545A (en) High speed GaAs MESFET having refractory contacts and a self-aligned cold gate fabrication process
US4536942A (en) Fabrication of T-shaped metal lines for semiconductor devices
US3994758A (en) Method of manufacturing a semiconductor device having closely spaced electrodes by perpendicular projection
JPS5950567A (ja) 電界効果トランジスタの製造方法
JPS59114871A (ja) シヨツトキ−ゲ−ト型ＧａＡｓ電界効果トランジスタの製造方法
JPS6351550B2 (enrdf_load_stackoverflow)
JPS6151980A (ja) 半導体装置の製造方法
US4587540A (en) Vertical MESFET with mesa step defining gate length
JPS6323669B2 (enrdf_load_stackoverflow)
JPS63273363A (ja) 半導体装置の製造方法
JPS62204576A (ja) 縦型トランジスタの製造方法
JPS5921193B2 (ja) 電界効果トランジスタの製造方法
JPS6276780A (ja) 半導体装置の製造方法
JPH0372634A (ja) Ｍｅｓ　ｆｅｔの製造方法
JPH0240924A (ja) 半導体装置の製造方法
JP2804499B2 (ja) 微細パターンの製造方法
JPS6146074A (ja) 半導体装置の製造方法
JPS61280673A (ja) 化合物半導体装置の製造方法
JPS6151979A (ja) 半導体装置の製造方法
JPH03239325A (ja) 半導体装置の製造方法
JP3183251B2 (ja) 半導体装置の製造方法
JPS6323366A (ja) 電界効果トランジスタの製造方法
JPH0327536A (ja) 電界効果トランジスタの製造方法
JPS63152175A (ja) 半導体装置の製造方法