JPS6150149B2 - - Google Patents
Info
- Publication number
- JPS6150149B2 JPS6150149B2 JP58005264A JP526483A JPS6150149B2 JP S6150149 B2 JPS6150149 B2 JP S6150149B2 JP 58005264 A JP58005264 A JP 58005264A JP 526483 A JP526483 A JP 526483A JP S6150149 B2 JPS6150149 B2 JP S6150149B2
- Authority
- JP
- Japan
- Prior art keywords
- ultraviolet
- lamp
- substrate
- pressure
- reaction vessel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 238000007740 vapor deposition Methods 0.000 claims description 9
- 230000015556 catabolic process Effects 0.000 claims description 7
- 238000006552 photochemical reaction Methods 0.000 claims description 4
- 239000007795 chemical reaction product Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- QYKABQMBXCBINA-UHFFFAOYSA-N 4-(oxan-2-yloxy)benzaldehyde Chemical compound C1=CC(C=O)=CC=C1OC1OCCCC1 QYKABQMBXCBINA-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP526483A JPS59129770A (ja) | 1983-01-18 | 1983-01-18 | 光化学蒸着装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP526483A JPS59129770A (ja) | 1983-01-18 | 1983-01-18 | 光化学蒸着装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59129770A JPS59129770A (ja) | 1984-07-26 |
| JPS6150149B2 true JPS6150149B2 (ko) | 1986-11-01 |
Family
ID=11606366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP526483A Granted JPS59129770A (ja) | 1983-01-18 | 1983-01-18 | 光化学蒸着装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59129770A (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS609875A (ja) * | 1983-06-27 | 1985-01-18 | Nec Corp | 光化学反応装置 |
| JPS6156279A (ja) * | 1984-08-25 | 1986-03-20 | Yasuo Tarui | 成膜方法 |
| DE3919538A1 (de) * | 1989-06-15 | 1990-12-20 | Asea Brown Boveri | Beschichtungsvorrichtung |
| JP4628025B2 (ja) * | 2004-06-24 | 2011-02-09 | 株式会社アルバック | 熱ｃｖｄ装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52120681A (en) * | 1976-04-02 | 1977-10-11 | Fujitsu Ltd | Gas phase growth device |
| JPS56105480A (en) * | 1980-01-25 | 1981-08-21 | Mitsubishi Electric Corp | Plasma etching method |
| JPS57112033A (en) * | 1980-12-29 | 1982-07-12 | Fujitsu Ltd | Unit for chemical vapor growth |
| JPS57179851A (en) * | 1981-04-30 | 1982-11-05 | Tokyo Ohka Kogyo Co Ltd | Formation of pattern |
-
1983
- 1983-01-18 JP JP526483A patent/JPS59129770A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52120681A (en) * | 1976-04-02 | 1977-10-11 | Fujitsu Ltd | Gas phase growth device |
| JPS56105480A (en) * | 1980-01-25 | 1981-08-21 | Mitsubishi Electric Corp | Plasma etching method |
| JPS57112033A (en) * | 1980-12-29 | 1982-07-12 | Fujitsu Ltd | Unit for chemical vapor growth |
| JPS57179851A (en) * | 1981-04-30 | 1982-11-05 | Tokyo Ohka Kogyo Co Ltd | Formation of pattern |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59129770A (ja) | 1984-07-26 |
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