JPS6149826B2 - - Google Patents

Info

Publication number
JPS6149826B2
JPS6149826B2 JP53145602A JP14560278A JPS6149826B2 JP S6149826 B2 JPS6149826 B2 JP S6149826B2 JP 53145602 A JP53145602 A JP 53145602A JP 14560278 A JP14560278 A JP 14560278A JP S6149826 B2 JPS6149826 B2 JP S6149826B2
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
oxide film
film
layer polycrystalline
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53145602A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5572076A (en
Inventor
Masahiro Hatanaka
Masahiko Yasuoka
Tsutomu Yoshihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14560278A priority Critical patent/JPS5572076A/ja
Publication of JPS5572076A publication Critical patent/JPS5572076A/ja
Publication of JPS6149826B2 publication Critical patent/JPS6149826B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
JP14560278A 1978-11-24 1978-11-24 Production of double layer polycrystaline silicone construction semiconductor device Granted JPS5572076A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14560278A JPS5572076A (en) 1978-11-24 1978-11-24 Production of double layer polycrystaline silicone construction semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14560278A JPS5572076A (en) 1978-11-24 1978-11-24 Production of double layer polycrystaline silicone construction semiconductor device

Publications (2)

Publication Number Publication Date
JPS5572076A JPS5572076A (en) 1980-05-30
JPS6149826B2 true JPS6149826B2 (US08063081-20111122-C00044.png) 1986-10-31

Family

ID=15388842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14560278A Granted JPS5572076A (en) 1978-11-24 1978-11-24 Production of double layer polycrystaline silicone construction semiconductor device

Country Status (1)

Country Link
JP (1) JPS5572076A (US08063081-20111122-C00044.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0416816Y2 (US08063081-20111122-C00044.png) * 1986-06-23 1992-04-15

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0416816Y2 (US08063081-20111122-C00044.png) * 1986-06-23 1992-04-15

Also Published As

Publication number Publication date
JPS5572076A (en) 1980-05-30

Similar Documents

Publication Publication Date Title
US4396933A (en) Dielectrically isolated semiconductor devices
KR19990023196A (ko) 트렌치 절연 구조 형성 방법과 반도체 디바이스 및 그의 제조방법
US4713356A (en) Manufacturing MOS semiconductor device with planarized conductive layer
JPS6321351B2 (US08063081-20111122-C00044.png)
KR900003835B1 (ko) 반도체 장치(半導體裝置)
JPS6015944A (ja) 半導体装置
US4885261A (en) Method for isolating a semiconductor element
US4283235A (en) Dielectric isolation using shallow oxide and polycrystalline silicon utilizing selective oxidation
US4231819A (en) Dielectric isolation method using shallow oxide and polycrystalline silicon utilizing a preliminary etching step
JPH05849B2 (US08063081-20111122-C00044.png)
JPS6149826B2 (US08063081-20111122-C00044.png)
JPH0513535B2 (US08063081-20111122-C00044.png)
JPS63188952A (ja) 半導体装置の製造方法
JPS5923468B2 (ja) 半導体装置の製造方法
JPS63237456A (ja) 半導体装置
JPS62128567A (ja) 不揮発性半導体記憶装置の製造方法
JPS6347335B2 (US08063081-20111122-C00044.png)
JPH079930B2 (ja) 半導体装置の製造方法
JPS60161632A (ja) 半導体装置及びその製造方法
JPS63197365A (ja) 半導体装置の製造方法
JP2531680B2 (ja) 半導体装置およびその製造方法
JPS5928993B2 (ja) 半導体装置とその製造方法
JPH0252859B2 (US08063081-20111122-C00044.png)
JPS63281441A (ja) 半導体装置及びその製造方法
JPS648471B2 (US08063081-20111122-C00044.png)