JPS6149416A - 多結晶シリコンウエハ製造用カ−ボン皿のコ−テイング方法 - Google Patents

多結晶シリコンウエハ製造用カ−ボン皿のコ−テイング方法

Info

Publication number
JPS6149416A
JPS6149416A JP59171332A JP17133284A JPS6149416A JP S6149416 A JPS6149416 A JP S6149416A JP 59171332 A JP59171332 A JP 59171332A JP 17133284 A JP17133284 A JP 17133284A JP S6149416 A JPS6149416 A JP S6149416A
Authority
JP
Japan
Prior art keywords
film
layer
polycrystalline silicon
carbon
sic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59171332A
Other languages
English (en)
Japanese (ja)
Other versions
JPH038579B2 (enExample
Inventor
Ichiro Hide
一郎 秀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoxan Corp
Hoxan Co Ltd
Original Assignee
Hoxan Corp
Hoxan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoxan Corp, Hoxan Co Ltd filed Critical Hoxan Corp
Priority to JP59171332A priority Critical patent/JPS6149416A/ja
Publication of JPS6149416A publication Critical patent/JPS6149416A/ja
Publication of JPH038579B2 publication Critical patent/JPH038579B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
JP59171332A 1984-08-17 1984-08-17 多結晶シリコンウエハ製造用カ−ボン皿のコ−テイング方法 Granted JPS6149416A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59171332A JPS6149416A (ja) 1984-08-17 1984-08-17 多結晶シリコンウエハ製造用カ−ボン皿のコ−テイング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59171332A JPS6149416A (ja) 1984-08-17 1984-08-17 多結晶シリコンウエハ製造用カ−ボン皿のコ−テイング方法

Publications (2)

Publication Number Publication Date
JPS6149416A true JPS6149416A (ja) 1986-03-11
JPH038579B2 JPH038579B2 (enExample) 1991-02-06

Family

ID=15921265

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59171332A Granted JPS6149416A (ja) 1984-08-17 1984-08-17 多結晶シリコンウエハ製造用カ−ボン皿のコ−テイング方法

Country Status (1)

Country Link
JP (1) JPS6149416A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6200388B1 (en) * 1998-02-11 2001-03-13 Applied Materials, Inc. Substrate support for a thermal processing chamber
CN103978746A (zh) * 2014-05-06 2014-08-13 上海天马有机发光显示技术有限公司 一种膜及其制备方法、显示面板及显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57134235A (en) * 1981-02-10 1982-08-19 Agency Of Ind Science & Technol Production of polycrystalline silicon semiconductor
JPS5820712A (ja) * 1981-07-28 1983-02-07 Agency Of Ind Science & Technol 多結晶シリコン半導体の製造方法
JPS5826019A (ja) * 1981-08-06 1983-02-16 Agency Of Ind Science & Technol 多結晶シリコンインゴットの鋳造法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57134235A (en) * 1981-02-10 1982-08-19 Agency Of Ind Science & Technol Production of polycrystalline silicon semiconductor
JPS5820712A (ja) * 1981-07-28 1983-02-07 Agency Of Ind Science & Technol 多結晶シリコン半導体の製造方法
JPS5826019A (ja) * 1981-08-06 1983-02-16 Agency Of Ind Science & Technol 多結晶シリコンインゴットの鋳造法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6200388B1 (en) * 1998-02-11 2001-03-13 Applied Materials, Inc. Substrate support for a thermal processing chamber
CN103978746A (zh) * 2014-05-06 2014-08-13 上海天马有机发光显示技术有限公司 一种膜及其制备方法、显示面板及显示装置

Also Published As

Publication number Publication date
JPH038579B2 (enExample) 1991-02-06

Similar Documents

Publication Publication Date Title
US4582559A (en) Method of making thin free standing single crystal films
JP2003119098A (ja) 種結晶の固定方法および固定状態の評価方法
JPH09312245A (ja) 薄膜堆積基板および薄膜堆積基板の作製方法
JPS5993000A (ja) 単結晶薄膜製造用基板
JPS61272922A (ja) 半導体装置ウエハ−基板とその製造方法
CN121816041A (zh) 一种硅上单晶薄膜产品的制备方法及薄膜产品
JP4688108B2 (ja) 種結晶の固定状態の評価方法
JPS61151097A (ja) 平滑面をもつダイヤモンド薄膜の製法
US4191788A (en) Method to reduce breakage of V-grooved <100> silicon substrate
JPS6046539B2 (ja) シリコン結晶膜の製造方法
JPH038579B2 (enExample)
JPS59126639A (ja) 半導体装置用基板の製造方法
US4229474A (en) Breakage resistant V-grooved <100> silicon substrates
JPH01145400A (ja) シリコンウェハー加熱用治具
JPS6294263A (ja) カツタ−ブレ−ドおよびその製造方法
JPS59174514A (ja) 多結晶シリコンウエハの製造方法
JPH06100398A (ja) 鏡面を有するダイヤモンド膜の製造方法
KR100719204B1 (ko) 대면적 박막트랜지스터 소자용 실리콘 기판의 제조방법
JPS59182217A (ja) 多結晶シリコンウエハの製造方法
JP3319217B2 (ja) 光学レンズ用金型およびその製造方法
JPH0154432B2 (enExample)
JPH0118575B2 (enExample)
JP2556159B2 (ja) 半導体結晶の製造方法
JPH0693452A (ja) サセプター
JP3162974B2 (ja) ガラス状カーボン膜を有するｃｖｄ成膜用シリカガラス治具及びその製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term