JPS6148706B2 - - Google Patents

Info

Publication number
JPS6148706B2
JPS6148706B2 JP2542380A JP2542380A JPS6148706B2 JP S6148706 B2 JPS6148706 B2 JP S6148706B2 JP 2542380 A JP2542380 A JP 2542380A JP 2542380 A JP2542380 A JP 2542380A JP S6148706 B2 JPS6148706 B2 JP S6148706B2
Authority
JP
Japan
Prior art keywords
pattern
photomask
shape
right angles
corner portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2542380A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56122034A (en
Inventor
Kazuyuki Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP2542380A priority Critical patent/JPS56122034A/ja
Publication of JPS56122034A publication Critical patent/JPS56122034A/ja
Publication of JPS6148706B2 publication Critical patent/JPS6148706B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2542380A 1980-02-29 1980-02-29 Photomask Granted JPS56122034A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2542380A JPS56122034A (en) 1980-02-29 1980-02-29 Photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2542380A JPS56122034A (en) 1980-02-29 1980-02-29 Photomask

Publications (2)

Publication Number Publication Date
JPS56122034A JPS56122034A (en) 1981-09-25
JPS6148706B2 true JPS6148706B2 (cs) 1986-10-25

Family

ID=12165540

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2542380A Granted JPS56122034A (en) 1980-02-29 1980-02-29 Photomask

Country Status (1)

Country Link
JP (1) JPS56122034A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63124904U (cs) * 1987-02-06 1988-08-15

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154959U (ja) * 1984-03-23 1985-10-16 ホ−ヤ株式会社 フオトマスクパタ−ン
JP2892014B2 (ja) * 1988-07-29 1999-05-17 ソニー株式会社 光露光用マスク及び露光方法
JP2012169457A (ja) * 2011-02-14 2012-09-06 Ngk Spark Plug Co Ltd 配線基板の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63124904U (cs) * 1987-02-06 1988-08-15

Also Published As

Publication number Publication date
JPS56122034A (en) 1981-09-25

Similar Documents

Publication Publication Date Title
US5079113A (en) Photo-mask
JPS6366934A (ja) チエツクパタ−ンを用いた半導体集積回路装置の製造方法
US4105468A (en) Method for removing defects from chromium and chromium oxide photomasks
US5439765A (en) Photomask for semiconductor integrated circuit device
JPS6148706B2 (cs)
US5260150A (en) Photo-mask with light shielding film buried in substrate
JPS633302B2 (cs)
EP0057268A3 (en) Method of fabricating x-ray lithographic masks
EP0310412B1 (en) Improvements in photo-masks
JPS6118955A (ja) レテイクルマスク
JPH02968A (ja) フォトマスク
JPS60222856A (ja) 静電破壊防止マスク
JP2789743B2 (ja) 半導体装置の製造方法
KR0164069B1 (ko) 저장전극마스크 및 그 제조방법
JPH03157653A (ja) レチクル
JPH0352213B2 (cs)
JPS59102235A (ja) ホトマスク
JPS5984245A (ja) フオトマスク
KR920003314B1 (ko) 광간섭 및 산란현상에 의한 근접효과 방지용 마스크 제조방법
JPS6381351A (ja) ホトマスク
JPS6227383B2 (cs)
JPH02226724A (ja) 集積回路装置の製造方法
JPS5914550B2 (ja) 微細加工方法
JPH05198497A (ja) 半導体装置の製造方法
JPH01173718A (ja) フォトマスクおよびその製造方法