JPS6148583B2 - - Google Patents
Info
- Publication number
- JPS6148583B2 JPS6148583B2 JP5801382A JP5801382A JPS6148583B2 JP S6148583 B2 JPS6148583 B2 JP S6148583B2 JP 5801382 A JP5801382 A JP 5801382A JP 5801382 A JP5801382 A JP 5801382A JP S6148583 B2 JPS6148583 B2 JP S6148583B2
- Authority
- JP
- Japan
- Prior art keywords
- reaction tube
- inert gas
- gas inlet
- inlet
- lid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000006243 chemical reaction Methods 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 41
- 239000011261 inert gas Substances 0.000 claims description 30
- 238000005229 chemical vapour deposition Methods 0.000 claims description 16
- 239000012495 reaction gas Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 2
- 239000010409 thin film Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5801382A JPS58177134A (ja) | 1982-04-09 | 1982-04-09 | 外熱型化学気相成長装置の反応管 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5801382A JPS58177134A (ja) | 1982-04-09 | 1982-04-09 | 外熱型化学気相成長装置の反応管 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58177134A JPS58177134A (ja) | 1983-10-17 |
| JPS6148583B2 true JPS6148583B2 (enrdf_load_stackoverflow) | 1986-10-24 |
Family
ID=13072079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5801382A Granted JPS58177134A (ja) | 1982-04-09 | 1982-04-09 | 外熱型化学気相成長装置の反応管 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58177134A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI395254B (zh) * | 2006-01-25 | 2013-05-01 | Air Water Inc | Film forming device |
-
1982
- 1982-04-09 JP JP5801382A patent/JPS58177134A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58177134A (ja) | 1983-10-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8020514B2 (en) | Batch-type remote plasma processing apparatus | |
| JP4694108B2 (ja) | 酸化膜形成方法、酸化膜形成装置および電子デバイス材料 | |
| US20130337653A1 (en) | Semiconductor processing apparatus with compact free radical source | |
| US20090178619A1 (en) | Substrate processing apparatus | |
| CN100477105C (zh) | 衬底处理装置和器件的制造方法 | |
| JP2003151737A (ja) | 加熱装置 | |
| TW201843733A (zh) | 蝕刻方法及蝕刻裝置 | |
| JPS6148583B2 (enrdf_load_stackoverflow) | ||
| JP2594051B2 (ja) | プラズマ処理方法 | |
| JP2860653B2 (ja) | プラズマ処理方法 | |
| JP3222723B2 (ja) | 半導体装置の製造方法 | |
| JPS5840833A (ja) | 窒化膜生成装置 | |
| US9255325B2 (en) | Method and apparatus for igniting silicon rods outside a CVD-reactor | |
| JP2001267250A (ja) | 半導体製造装置 | |
| KR20030080574A (ko) | 반도체 제조용 챔버 | |
| JPS6357939B2 (enrdf_load_stackoverflow) | ||
| JPH11176762A (ja) | 半導体製造装置 | |
| JPH08191049A (ja) | 半導体製造装置 | |
| JPH05343335A (ja) | シリコン窒化膜の形成方法 | |
| JPH03242934A (ja) | 半導体成膜方法 | |
| JPS6068619A (ja) | プラズマｃｖｄ装置 | |
| JP2003100742A (ja) | 半導体デバイスの製造方法 | |
| JPS63119535A (ja) | プラズマｃｖｄ装置 | |
| JPS62263642A (ja) | 気相成長方法 | |
| JPS63299248A (ja) | 半導体装置の製造方法 |