JPS6148265B2 - - Google Patents

Info

Publication number
JPS6148265B2
JPS6148265B2 JP54071900A JP7190079A JPS6148265B2 JP S6148265 B2 JPS6148265 B2 JP S6148265B2 JP 54071900 A JP54071900 A JP 54071900A JP 7190079 A JP7190079 A JP 7190079A JP S6148265 B2 JPS6148265 B2 JP S6148265B2
Authority
JP
Japan
Prior art keywords
semiconductor
chip
container
chip support
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54071900A
Other languages
English (en)
Other versions
JPS55163850A (en
Inventor
Norio Honda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP7190079A priority Critical patent/JPS55163850A/ja
Priority to DE8080301853T priority patent/DE3070853D1/de
Priority to EP80301853A priority patent/EP0021643B1/en
Publication of JPS55163850A publication Critical patent/JPS55163850A/ja
Priority to US06/469,833 priority patent/US4580157A/en
Publication of JPS6148265B2 publication Critical patent/JPS6148265B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01092—Uranium [U]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/15165—Monolayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Memories (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Die Bonding (AREA)

Description

【発明の詳細な説明】 本発明は半導体装置、特に組立の構造に関す
る。従来、半導体装置は半導体チツプを絶縁性収
容器に封入し、必要な導電配線により外部リード
端子に接続して導出せしめた構造となつている。
かような絶縁性収容容器をセラミツクなどの材
料で形成せしめると、セラミツク材料より放射線
特にα線が照射され、半導体素子が例えばメモ
リ・セルである場合には記憶データを破壊する等
の不都合を生ずることが知られている。
これはセラミツク材料中にPPM単位で含有さ
れているウラニウムやトリウムが放射性崩壊する
際にα線を放出し、該α線が半導体チツプ表面の
メモリ・セルを透過するときに多数の電子−正孔
対を生成し、これが記憶データを狂わせ、いわゆ
るソフト・エラーを発生するものである。
この様なソフト・エラーは物理的欠陥ではない
ので永久的に生ずるものではないが、半導体装置
の信頼上からは致命的とも云える問題である。
従つてα線照射の防止を図ることが必要で、収
容容器に適切な工夫を施こすことが重要となつて
きた。
本発明はこの様な点に鑑みてなされたもので、
メモリ・セルなどの半導体素子表面への放射線特
にα線照射を遮蔽して、半導体素子の特性劣化を
防止することを目的とし、表面に半導体素子を備
えた半導体チツプと、表面に導電配線層を備え且
つ放射性物質を含まない材料からなるチツプ支持
台とを、互に表面を対向させて配置し、該チツプ
支持台を収容容器に接着し、チツプ支持台と収容
容器との電極間はボンデイングワイヤーで接続し
た構造としたことを特徴とするものである。
以下、本発明を図面を参照して一実施例により
説明する。
第１図は本発明による半導体装置の構造断面図
であつて、図中１は半導体チツプ、２はシリコン
で作成されたチツプ支持台、３はセラミツク製収
容容器、４は同キヤツプ、５は外部リード端子、
７は前記セラミツク製収容容器３、同キヤツプ４
及び外部リード端子５を固定、封着する低融点ガ
ラスを示している。そして半導体チツプ１の表面
には金バンブ電極１１が形成されており、シリコ
ン製チツプ支持台２の表面の導電配線層２１に上
記の金バンブ電極を熱圧着させて、表面が互に対
向する様に配置形成され、又チツプ支持台２の背
面はセラミツク製収容容器３に金・シリコン半田
２２で融着される。
第２図に第１図のＡ部詳細図を示しており、シ
リコン製チツプ支持台２は上記の様に背面を半田
付けしているが、表面では酸化シリコン又は窒化
シリコンからなる絶縁膜２３上に導電配線層２１
を形成してあり、該導電配線層２１は下層にニツ
ケル、銅、クロム、チタンなどの薄膜２１Ａ、上
層に金薄膜２１Ｂの二層で形成されている。
一方、半導体チツプ１はメモリ・セル１２の導
電配線層１３の端部に金バンブ電極１１が形成さ
れており、該金バンブ電極をシリコン製チツプ支
持台２の導電配線層２１に適度の温度及び圧力を
加えることにより接着せしめている。
該導電配線層２１とセラミツク製収容容器の導
電層３１とは金線などのワイヤ・ボンデング６に
よつて結線し、外部リード端子５に導出せしめ
る。この様に配設すればメモリ・セルは半導体チ
ツプ基板とシリコン製チツプ支持台とのいずれも
高純度のシリコン材料に挾まれた構造となるため
に、たとえ収容容器がα線を放出しても、直進性
のあるα線に対して完全に遮蔽することができ
て、記憶データを破壊することはなくなる。
上記例ではシリコンで作成されたチツプ支持台
を用いて説明したが、熱膨脹率が半導体チツプ及
び収容容器に近似して、放射性崩壊する物質が含
まれなければ如何なる他の材料でも構わない。
以上の様に、本発明は従来と同様にセラミツク
製などの収容容器を用いても、半導体素子を放射
線に対して充分に遮蔽することが出来るので、半
導体装置の信頼度を向上させるのに極めて効果あ
るものである。
更に、本発明にかかる半導体装置の構造は、公
知のワイヤーボンデイングを自動的におこなうこ
とができるから、コストアツプも少なく、高い信
頼性が得られる利点がある。
【図面の簡単な説明】
第１図は本発明による半導体装置の構造断面
図、第２図は第１図の局部詳細図を示す。 図において、１は半導体チツプ、２はチツプ支
持台、３は収容容器で１２は半導体素子（メモ
リ・セル）の配設領域である。

Claims (1)

    【特許請求の範囲】
  1. １ 表面に半導体素子を備えた半導体チツプと、
    該半導体チツプ上の電極に対向する電極部とワイ
    ヤーボンデイング部間に延在する表面導電配線層
    を備え且つ放射性物質を含まない材料からなるチ
    ツプ支持台とが、互に表面を対向させて配置さ
    れ、該チツプ支持台が収容容器に接着されてな
    り、且つ、該チツプ支持台と収容容器との電極間
    がワイヤーボンデイングされてなる構造であるこ
    とを特徴とする半導体装置。
JP7190079A 1979-06-08 1979-06-08 Semiconductor device Granted JPS55163850A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP7190079A JPS55163850A (en) 1979-06-08 1979-06-08 Semiconductor device
DE8080301853T DE3070853D1 (en) 1979-06-08 1980-06-03 Semiconductor device having a soft-error preventing structure
EP80301853A EP0021643B1 (en) 1979-06-08 1980-06-03 Semiconductor device having a soft-error preventing structure
US06/469,833 US4580157A (en) 1979-06-08 1983-03-02 Semiconductor device having a soft-error preventing structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7190079A JPS55163850A (en) 1979-06-08 1979-06-08 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55163850A JPS55163850A (en) 1980-12-20
JPS6148265B2 true JPS6148265B2 (ja) 1986-10-23

Family

ID=13473866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7190079A Granted JPS55163850A (en) 1979-06-08 1979-06-08 Semiconductor device

Country Status (4)

Country Link
US (1) US4580157A (ja)
EP (1) EP0021643B1 (ja)
JP (1) JPS55163850A (ja)
DE (1) DE3070853D1 (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0028490B1 (en) * 1979-11-02 1983-12-21 BURROUGHS CORPORATION (a Michigan corporation) Integrated circuit with alpha radiation shielding means
FR2498814B1 (fr) * 1981-01-26 1985-12-20 Burroughs Corp Boitier pour circuit integre, moyen pour le montage et procede de fabrication
US4528212A (en) * 1982-07-22 1985-07-09 International Business Machines Corporation Coated ceramic substrates for mounting integrated circuits
FR2550009B1 (fr) * 1983-07-29 1986-01-24 Inf Milit Spatiale Aeronaut Boitier de composant electronique muni d'un condensateur
US4649424A (en) * 1985-06-11 1987-03-10 Beltronics Inc. Grounding system for CCD imaging apparatus and the like
FR2584863B1 (fr) * 1985-07-12 1988-10-21 Inf Milit Spatiale Aeronaut Composant electronique durci vis-a-vis des radiations
US4866498A (en) * 1988-04-20 1989-09-12 The United States Department Of Energy Integrated circuit with dissipative layer for photogenerated carriers
KR900019177A (ko) * 1988-05-19 1990-12-24 야마자키 순페이 전기 장치 및 제조방법
FR2640428B1 (fr) * 1988-12-09 1992-10-30 Thomson Csf Procede de durcissement vis-a-vis des rayonnements ionisants de composants electroniques actifs, et composants durcis de grandes dimensions
US6172412B1 (en) 1993-10-08 2001-01-09 Stratedge Corporation High frequency microelectronics package
US6611054B1 (en) * 1993-12-22 2003-08-26 Honeywell Inc. IC package lid for dose enhancement protection
US5477009A (en) * 1994-03-21 1995-12-19 Motorola, Inc. Resealable multichip module and method therefore
US7646095B2 (en) * 2003-09-30 2010-01-12 Panasonic Corporation Semiconductor device
US8946874B2 (en) 2011-01-25 2015-02-03 Taiwan Semiconductor Manufacturing Company, Ltd. IC in-process solution to reduce thermal neutrons soft error rate
US10109609B2 (en) 2014-01-13 2018-10-23 Infineon Technologies Austria Ag Connection structure and electronic component

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5588356A (en) * 1978-12-27 1980-07-04 Hitachi Ltd Semiconductor device

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH378423A (de) * 1959-02-19 1964-06-15 Telefunken Gmbh Halbleiteranordnung vom Flächentyp
US3257588A (en) * 1959-04-27 1966-06-21 Rca Corp Semiconductor device enclosures
US3710204A (en) * 1967-05-20 1973-01-09 Telefunken Patent A semiconductor device having a screen electrode of intrinsic semiconductor material
GB1204805A (en) * 1967-07-07 1970-09-09 Hitachi Ltd Semiconductor device
GB1249812A (en) * 1969-05-29 1971-10-13 Ferranti Ltd Improvements relating to semiconductor devices
GB1282740A (en) * 1969-10-21 1972-07-26 Northrop Corp Radiation resistant semiconductor device
US3614546A (en) * 1970-01-07 1971-10-19 Rca Corp Shielded semiconductor device
US3715638A (en) * 1971-05-10 1973-02-06 Bendix Corp Temperature compensator for capacitive pressure transducers
US3946428A (en) * 1973-09-19 1976-03-23 Nippon Electric Company, Limited Encapsulation package for a semiconductor element
JPS51111069A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Semiconductor device
US4177480A (en) * 1975-10-02 1979-12-04 Licentia Patent-Verwaltungs-G.M.B.H. Integrated circuit arrangement with means for avoiding undesirable capacitive coupling between leads
DE2543968A1 (de) * 1975-10-02 1977-04-07 Licentia Gmbh Integrierte schaltungsanordnung
DE2609077A1 (de) * 1976-03-05 1977-09-15 Bosch Gmbh Robert Schaltanordnung mit einem streufeldkondensator
JPS52120768A (en) * 1976-04-05 1977-10-11 Nec Corp Semiconductor device
JPS5591145A (en) * 1978-12-28 1980-07-10 Narumi China Corp Production of ceramic package

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5588356A (en) * 1978-12-27 1980-07-04 Hitachi Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS55163850A (en) 1980-12-20
EP0021643B1 (en) 1985-07-10
DE3070853D1 (en) 1985-08-14
EP0021643A1 (en) 1981-01-07
US4580157A (en) 1986-04-01

Similar Documents

Publication Publication Date Title
US4541003A (en) Semiconductor device including an alpha-particle shield
JPS6148265B2 (ja)
US5357056A (en) Chip carrier for optical device
JPS6255301B2 (ja)
EP0029858B1 (en) Semiconductor device
JPS614250A (ja) 半導体装置用パツケ−ジ
JPS628032B2 (ja)
US5264726A (en) Chip-carrier
JP2755360B2 (ja) アルファ粒子遮蔽機能を有する半導体モジュール
JPS6028139Y2 (ja) 半導体装置
JPS55128845A (en) Semiconductor device
JPS5942983B2 (ja) 半導体装置
CA2021682C (en) Chip-carrier with alpha ray shield
JPS6136709B2 (ja)
JPS631756B2 (ja)
JPS631755B2 (ja)
US6452263B1 (en) Radiation shield and radiation shielded integrated circuit device
JP3229176B2 (ja) 耐放射線用パッケージ
JPS6138861B2 (ja)
JPH07193164A (ja) 半導体集積回路装置
JPS63250847A (ja) 半導体装置及びその製造方法
JPH0414842Y2 (ja)
JPS6150349A (ja) 半導体装置の製造方法
JPS581920Y2 (ja) 半導体記憶装置
JPS5817642A (ja) 半導体デバイス用保護装置