JPS6146440B2 - - Google Patents
Info
- Publication number
- JPS6146440B2 JPS6146440B2 JP5865279A JP5865279A JPS6146440B2 JP S6146440 B2 JPS6146440 B2 JP S6146440B2 JP 5865279 A JP5865279 A JP 5865279A JP 5865279 A JP5865279 A JP 5865279A JP S6146440 B2 JPS6146440 B2 JP S6146440B2
- Authority
- JP
- Japan
- Prior art keywords
- growth
- magnesium chloride
- region
- reaction tube
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 60
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 claims description 59
- 238000006243 chemical reaction Methods 0.000 claims description 32
- 229910001629 magnesium chloride Inorganic materials 0.000 claims description 30
- 239000000395 magnesium oxide Substances 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 24
- 239000011029 spinel Substances 0.000 claims description 23
- 229910052596 spinel Inorganic materials 0.000 claims description 23
- 239000012808 vapor phase Substances 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 10
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 10
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 10
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 9
- 230000006698 induction Effects 0.000 claims description 7
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims description 6
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 6
- 239000001569 carbon dioxide Substances 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 238000001556 precipitation Methods 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910001120 nichrome Inorganic materials 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000007858 starting material Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 244000041517 Etlingera elatior Species 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 description 10
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910000953 kanthal Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5865279A JPS55154400A (en) | 1979-05-15 | 1979-05-15 | Gas phase epitaxial growing method of magnesia spinel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5865279A JPS55154400A (en) | 1979-05-15 | 1979-05-15 | Gas phase epitaxial growing method of magnesia spinel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55154400A JPS55154400A (en) | 1980-12-01 |
| JPS6146440B2 true JPS6146440B2 (fr) | 1986-10-14 |
Family
ID=13090508
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5865279A Granted JPS55154400A (en) | 1979-05-15 | 1979-05-15 | Gas phase epitaxial growing method of magnesia spinel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55154400A (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63127140A (ja) * | 1986-11-17 | 1988-05-31 | Mitsubishi Kasei Corp | コ−クス炉発生ガスサンプリング装置 |
| WO2016082631A1 (fr) * | 2014-11-26 | 2016-06-02 | 上海新微技术研发中心有限公司 | Procédé de liaison et procédé de fabrication de dispositif à semi-conducteur |
-
1979
- 1979-05-15 JP JP5865279A patent/JPS55154400A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63127140A (ja) * | 1986-11-17 | 1988-05-31 | Mitsubishi Kasei Corp | コ−クス炉発生ガスサンプリング装置 |
| WO2016082631A1 (fr) * | 2014-11-26 | 2016-06-02 | 上海新微技术研发中心有限公司 | Procédé de liaison et procédé de fabrication de dispositif à semi-conducteur |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55154400A (en) | 1980-12-01 |
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