JPS6145823B2 - - Google Patents
Info
- Publication number
- JPS6145823B2 JPS6145823B2 JP13627179A JP13627179A JPS6145823B2 JP S6145823 B2 JPS6145823 B2 JP S6145823B2 JP 13627179 A JP13627179 A JP 13627179A JP 13627179 A JP13627179 A JP 13627179A JP S6145823 B2 JPS6145823 B2 JP S6145823B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- glass substrate
- mask material
- mask
- resist film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
- G03F1/78—Patterning of masks by imaging by charged particle beam [CPB], e.g. electron beam patterning of masks
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13627179A JPS5660435A (en) | 1979-10-22 | 1979-10-22 | Mask pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13627179A JPS5660435A (en) | 1979-10-22 | 1979-10-22 | Mask pattern forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5660435A JPS5660435A (en) | 1981-05-25 |
| JPS6145823B2 true JPS6145823B2 (cg-RX-API-DMAC7.html) | 1986-10-09 |
Family
ID=15171283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13627179A Granted JPS5660435A (en) | 1979-10-22 | 1979-10-22 | Mask pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5660435A (cg-RX-API-DMAC7.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0331320U (cg-RX-API-DMAC7.html) * | 1989-08-03 | 1991-03-27 |
-
1979
- 1979-10-22 JP JP13627179A patent/JPS5660435A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0331320U (cg-RX-API-DMAC7.html) * | 1989-08-03 | 1991-03-27 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5660435A (en) | 1981-05-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2000508118A (ja) | 駆動電流を制御するための半導体ウェハの処理方法 | |
| JPS6077440A (ja) | 細線パタ−ンの形成方法 | |
| JP2994501B2 (ja) | パターン形成方法 | |
| EP0021719A2 (en) | Method for producing negative resist images, and resist images | |
| US3986876A (en) | Method for making a mask having a sloped relief | |
| JPS6145823B2 (cg-RX-API-DMAC7.html) | ||
| EP0030604A2 (en) | Photoresist image hardening process | |
| JPS57130432A (en) | Manufacture of semiconductor device | |
| JP2009105248A (ja) | パターン形成方法 | |
| JP2506637B2 (ja) | パタ−ン形成方法 | |
| JPH0237688B2 (cg-RX-API-DMAC7.html) | ||
| JPS61116838A (ja) | レジストパタ−ン形成方法 | |
| JP2002343705A (ja) | フォトレジスト膜の断面に凹凸形状を形成する方法 | |
| US5498769A (en) | Method for thermally treating resist film and forming undercut pattern | |
| JPH01137634A (ja) | 半導体装置の製造方法 | |
| JPS613405A (ja) | レジストパタ−ン形成方法 | |
| JPH0550850B2 (cg-RX-API-DMAC7.html) | ||
| JPS6155663B2 (cg-RX-API-DMAC7.html) | ||
| JPH05175114A (ja) | 半導体装置の製造方法 | |
| JP2005136430A (ja) | パターン形成方法 | |
| JPS63215040A (ja) | レジストのハ−ドニング方法 | |
| JPH0572579B2 (cg-RX-API-DMAC7.html) | ||
| JPH02262155A (ja) | レジストパターンの形成方法 | |
| JP2000182940A (ja) | レジストパターン形成方法 | |
| JPS612326A (ja) | レジストパタ−ンの形成方法 |