JPS6144703A - 耐摩耗層 - Google Patents
耐摩耗層Info
- Publication number
- JPS6144703A JPS6144703A JP59166994A JP16699484A JPS6144703A JP S6144703 A JPS6144703 A JP S6144703A JP 59166994 A JP59166994 A JP 59166994A JP 16699484 A JP16699484 A JP 16699484A JP S6144703 A JPS6144703 A JP S6144703A
- Authority
- JP
- Japan
- Prior art keywords
- boron
- silicon
- phosphorus
- wear
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005299 abrasion Methods 0.000 title abstract description 12
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 28
- 229910052796 boron Inorganic materials 0.000 claims abstract description 25
- 239000011574 phosphorus Substances 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims abstract description 13
- -1 phosphorus compound Chemical class 0.000 claims abstract description 13
- 239000001257 hydrogen Substances 0.000 claims abstract description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 9
- 150000001639 boron compounds Chemical class 0.000 claims abstract description 8
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 8
- 238000000354 decomposition reaction Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052736 halogen Inorganic materials 0.000 claims description 7
- 150000002367 halogens Chemical class 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 150000003018 phosphorus compounds Chemical class 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 5
- 239000012159 carrier gas Substances 0.000 abstract description 3
- 229910015844 BCl3 Inorganic materials 0.000 abstract description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 abstract description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 abstract description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 82
- 239000010409 thin film Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 11
- 230000006866 deterioration Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical class P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005338 heat storage Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 229910010277 boron hydride Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Electronic Switches (AREA)
- Chemical Vapour Deposition (AREA)
- Non-Adjustable Resistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59166994A JPS6144703A (ja) | 1984-08-09 | 1984-08-09 | 耐摩耗層 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59166994A JPS6144703A (ja) | 1984-08-09 | 1984-08-09 | 耐摩耗層 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6144703A true JPS6144703A (ja) | 1986-03-04 |
| JPH0551528B2 JPH0551528B2 (enrdf_load_stackoverflow) | 1993-08-02 |
Family
ID=15841411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59166994A Granted JPS6144703A (ja) | 1984-08-09 | 1984-08-09 | 耐摩耗層 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6144703A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000165002A (ja) * | 1998-11-26 | 2000-06-16 | Furontekku:Kk | 電子機器用基板及びその製造方法と電子機器 |
| KR20190086762A (ko) * | 2016-11-29 | 2019-07-23 | 세미누클리어 인코포레이티드 | 피코결정성 인공 보란 원자를 제조하기 위한 조성물 및 방법 |
-
1984
- 1984-08-09 JP JP59166994A patent/JPS6144703A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000165002A (ja) * | 1998-11-26 | 2000-06-16 | Furontekku:Kk | 電子機器用基板及びその製造方法と電子機器 |
| KR20190086762A (ko) * | 2016-11-29 | 2019-07-23 | 세미누클리어 인코포레이티드 | 피코결정성 인공 보란 원자를 제조하기 위한 조성물 및 방법 |
| JP2020500830A (ja) * | 2016-11-29 | 2020-01-16 | セミニュークリア, インコーポレイテッドSeminuclear, Inc. | ピコ結晶人工ボラン原子を製造するための組成物及び方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0551528B2 (enrdf_load_stackoverflow) | 1993-08-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7446284B2 (en) | Etch resistant wafer processing apparatus and method for producing the same | |
| Cappellini et al. | Optical properties of BN in cubic and layered hexagonal phases | |
| EP0567124B1 (en) | Bonding tool having diamond head and method of manufacturing the same | |
| US6268045B1 (en) | Hard material coating of a cemented carbide or carbide containing cermet substrate | |
| US5350720A (en) | Triple-layered ceramic heater | |
| JPS6144703A (ja) | 耐摩耗層 | |
| KR100361067B1 (ko) | 염소계 가스에 대한 내식성 부재 | |
| EP0635871A2 (en) | High heat conductive insulated substrate and method of manufacturing the same | |
| JPS6144402A (ja) | 耐摩耗層および電子部品 | |
| US4862195A (en) | Overcoating layer for thermal printing head | |
| JPS6144401A (ja) | 耐摩耗層および電子部品 | |
| JPH0699601A (ja) | 薄膜保護層およびサーマルヘッド | |
| JPS61261480A (ja) | ダイヤモンド被覆部材 | |
| JP2870692B2 (ja) | 薄膜型サーマルヘッド | |
| JPH0122154B2 (enrdf_load_stackoverflow) | ||
| JPS6191901A (ja) | 薄膜保護層 | |
| JPH03260069A (ja) | 高い付着強度を有する人工ダイヤモンド被覆硬質焼結工具部材 | |
| JPS6125550B2 (enrdf_load_stackoverflow) | ||
| JPS62202756A (ja) | 薄膜型サ−マルヘツド | |
| JP2003347103A (ja) | 抵抗体 | |
| JP2003247069A (ja) | 抵抗体 | |
| JP4034976B2 (ja) | 抵抗体 | |
| JPS59118878A (ja) | 点火プラグ電極 | |
| JPS6277476A (ja) | 保護膜及びその製造法 | |
| JPS62202753A (ja) | 薄膜型サ−マルヘツド |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |