JPS6143858B2 - - Google Patents
Info
- Publication number
- JPS6143858B2 JPS6143858B2 JP52109877A JP10987777A JPS6143858B2 JP S6143858 B2 JPS6143858 B2 JP S6143858B2 JP 52109877 A JP52109877 A JP 52109877A JP 10987777 A JP10987777 A JP 10987777A JP S6143858 B2 JPS6143858 B2 JP S6143858B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- oxide film
- type
- conductivity type
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000000605 extraction Methods 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 3
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 108091006146 Channels Proteins 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Bipolar Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10987777A JPS5443688A (en) | 1977-09-14 | 1977-09-14 | Production of semiconductor integrated circuit unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10987777A JPS5443688A (en) | 1977-09-14 | 1977-09-14 | Production of semiconductor integrated circuit unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5443688A JPS5443688A (en) | 1979-04-06 |
| JPS6143858B2 true JPS6143858B2 (en, 2012) | 1986-09-30 |
Family
ID=14521427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10987777A Granted JPS5443688A (en) | 1977-09-14 | 1977-09-14 | Production of semiconductor integrated circuit unit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5443688A (en, 2012) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55146960A (en) * | 1979-05-02 | 1980-11-15 | Hitachi Ltd | Manufacture of integrated circuit device |
| JPS58225663A (ja) * | 1982-06-23 | 1983-12-27 | Toshiba Corp | 半導体装置の製造方法 |
| KR930008899B1 (ko) * | 1987-12-31 | 1993-09-16 | 금성일렉트론 주식회사 | 트랜칭(trenching)에 의한 바이-씨모스(Bi-CMOS)제조방법 |
| JPH0770703B2 (ja) * | 1989-05-22 | 1995-07-31 | 株式会社東芝 | 電荷転送デバイスを含む半導体装置およびその製造方法 |
-
1977
- 1977-09-14 JP JP10987777A patent/JPS5443688A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5443688A (en) | 1979-04-06 |
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