JPS6142987A - 半導体レ−ザの製造方法 - Google Patents

半導体レ−ザの製造方法

Info

Publication number
JPS6142987A
JPS6142987A JP16533484A JP16533484A JPS6142987A JP S6142987 A JPS6142987 A JP S6142987A JP 16533484 A JP16533484 A JP 16533484A JP 16533484 A JP16533484 A JP 16533484A JP S6142987 A JPS6142987 A JP S6142987A
Authority
JP
Japan
Prior art keywords
layer
light absorption
semiconductor substrate
semiconductor laser
cladding layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16533484A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0137871B2 (enrdf_load_stackoverflow
Inventor
Masahito Mushigami
雅人 虫上
Haruo Tanaka
田中　治夫
Hayamizu Fukada
深田　速水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP16533484A priority Critical patent/JPS6142987A/ja
Publication of JPS6142987A publication Critical patent/JPS6142987A/ja
Publication of JPH0137871B2 publication Critical patent/JPH0137871B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
JP16533484A 1984-08-06 1984-08-06 半導体レ−ザの製造方法 Granted JPS6142987A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16533484A JPS6142987A (ja) 1984-08-06 1984-08-06 半導体レ−ザの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16533484A JPS6142987A (ja) 1984-08-06 1984-08-06 半導体レ−ザの製造方法

Publications (2)

Publication Number Publication Date
JPS6142987A true JPS6142987A (ja) 1986-03-01
JPH0137871B2 JPH0137871B2 (enrdf_load_stackoverflow) 1989-08-09

Family

ID=15810355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16533484A Granted JPS6142987A (ja) 1984-08-06 1984-08-06 半導体レ−ザの製造方法

Country Status (1)

Country Link
JP (1) JPS6142987A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63120A (ja) * 1986-06-19 1988-01-05 Nippon Telegr & Teleph Corp <Ntt> パタ−ン化半導体領域を有する半導体装置の製法
JPH02194684A (ja) * 1989-01-24 1990-08-01 Rohm Co Ltd 半導体レーザの製造方法
JPH02194682A (ja) * 1989-01-24 1990-08-01 Rohm Co Ltd 半導体レーザの製造方法
JPH02194585A (ja) * 1989-01-23 1990-08-01 Rohm Co Ltd 半導体レーザの製造方法
JPH03268471A (ja) * 1990-03-19 1991-11-29 Sharp Corp 半導体レーザおよびその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58206172A (ja) * 1982-05-07 1983-12-01 ウエスタ−ン・エレクトリツク・カムパニ−・インコ−ポレ−テツド ３−５族半導体材料を基礎とした半導体デバイスの製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58206172A (ja) * 1982-05-07 1983-12-01 ウエスタ−ン・エレクトリツク・カムパニ−・インコ−ポレ−テツド ３−５族半導体材料を基礎とした半導体デバイスの製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63120A (ja) * 1986-06-19 1988-01-05 Nippon Telegr & Teleph Corp <Ntt> パタ−ン化半導体領域を有する半導体装置の製法
JPH02194585A (ja) * 1989-01-23 1990-08-01 Rohm Co Ltd 半導体レーザの製造方法
JPH02194684A (ja) * 1989-01-24 1990-08-01 Rohm Co Ltd 半導体レーザの製造方法
JPH02194682A (ja) * 1989-01-24 1990-08-01 Rohm Co Ltd 半導体レーザの製造方法
JPH03268471A (ja) * 1990-03-19 1991-11-29 Sharp Corp 半導体レーザおよびその製造方法

Also Published As

Publication number Publication date
JPH0137871B2 (enrdf_load_stackoverflow) 1989-08-09

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