JPS6142961A - 薄膜電界効果トランジスタとその製造方法 - Google Patents

薄膜電界効果トランジスタとその製造方法

Info

Publication number
JPS6142961A
JPS6142961A JP59165214A JP16521484A JPS6142961A JP S6142961 A JPS6142961 A JP S6142961A JP 59165214 A JP59165214 A JP 59165214A JP 16521484 A JP16521484 A JP 16521484A JP S6142961 A JPS6142961 A JP S6142961A
Authority
JP
Japan
Prior art keywords
thin film
layer
field effect
effect transistor
transparent electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59165214A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0530057B2 (enrdf_load_stackoverflow
Inventor
Keiichi Nakao
恵一 中尾
Sadakichi Hotta
定吉 堀田
Shigenobu Shirai
白井　繁信
Ikunori Kobayashi
郁典 小林
Seiichi Nagata
清一 永田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59165214A priority Critical patent/JPS6142961A/ja
Publication of JPS6142961A publication Critical patent/JPS6142961A/ja
Publication of JPH0530057B2 publication Critical patent/JPH0530057B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon

Landscapes

  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
JP59165214A 1984-08-07 1984-08-07 薄膜電界効果トランジスタとその製造方法 Granted JPS6142961A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59165214A JPS6142961A (ja) 1984-08-07 1984-08-07 薄膜電界効果トランジスタとその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59165214A JPS6142961A (ja) 1984-08-07 1984-08-07 薄膜電界効果トランジスタとその製造方法

Publications (2)

Publication Number Publication Date
JPS6142961A true JPS6142961A (ja) 1986-03-01
JPH0530057B2 JPH0530057B2 (enrdf_load_stackoverflow) 1993-05-07

Family

ID=15808013

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59165214A Granted JPS6142961A (ja) 1984-08-07 1984-08-07 薄膜電界効果トランジスタとその製造方法

Country Status (1)

Country Link
JP (1) JPS6142961A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62209862A (ja) * 1986-03-10 1987-09-16 Matsushita Electric Ind Co Ltd 薄膜半導体デバイス
JPH01250929A (ja) * 1988-03-31 1989-10-05 Casio Comput Co Ltd 薄膜トランジスタパネルの製造方法
US4951113A (en) * 1988-11-07 1990-08-21 Xerox Corporation Simultaneously deposited thin film CMOS TFTs and their method of fabrication
US5065202A (en) * 1988-02-26 1991-11-12 Seikosha Co., Ltd. Amorphous silicon thin film transistor array substrate and method for producing the same
US5455182A (en) * 1990-11-02 1995-10-03 Sharp Kabushiki Kaisha Semiconductor process for forming channel layer with passivated covering
JP2000101091A (ja) * 1998-09-28 2000-04-07 Sharp Corp 薄膜トランジスタ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014133183A1 (ja) * 2013-03-01 2014-09-04 国立大学法人 東京大学 密な部分及び疎な部分を有する単層カーボンナノチューブを有する膜及びその製造方法、並びに該膜を有する材料及びその製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62209862A (ja) * 1986-03-10 1987-09-16 Matsushita Electric Ind Co Ltd 薄膜半導体デバイス
US5065202A (en) * 1988-02-26 1991-11-12 Seikosha Co., Ltd. Amorphous silicon thin film transistor array substrate and method for producing the same
JPH01250929A (ja) * 1988-03-31 1989-10-05 Casio Comput Co Ltd 薄膜トランジスタパネルの製造方法
US4951113A (en) * 1988-11-07 1990-08-21 Xerox Corporation Simultaneously deposited thin film CMOS TFTs and their method of fabrication
US5455182A (en) * 1990-11-02 1995-10-03 Sharp Kabushiki Kaisha Semiconductor process for forming channel layer with passivated covering
JP2000101091A (ja) * 1998-09-28 2000-04-07 Sharp Corp 薄膜トランジスタ

Also Published As

Publication number Publication date
JPH0530057B2 (enrdf_load_stackoverflow) 1993-05-07

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term