JPS6142360B2 - - Google Patents
Info
- Publication number
- JPS6142360B2 JPS6142360B2 JP56101588A JP10158881A JPS6142360B2 JP S6142360 B2 JPS6142360 B2 JP S6142360B2 JP 56101588 A JP56101588 A JP 56101588A JP 10158881 A JP10158881 A JP 10158881A JP S6142360 B2 JPS6142360 B2 JP S6142360B2
- Authority
- JP
- Japan
- Prior art keywords
- memory
- circuit
- signal
- fuse
- data
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015654 memory Effects 0.000 claims abstract description 82
- 230000002950 deficient Effects 0.000 claims abstract description 14
- 238000013500 data storage Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008672 reprogramming Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
Landscapes
- Techniques For Improving Reliability Of Storages (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56101588A JPS583198A (ja) | 1981-06-30 | 1981-06-30 | 半導体記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56101588A JPS583198A (ja) | 1981-06-30 | 1981-06-30 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS583198A JPS583198A (ja) | 1983-01-08 |
| JPS6142360B2 true JPS6142360B2 (cg-RX-API-DMAC10.html) | 1986-09-20 |
Family
ID=14304541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56101588A Granted JPS583198A (ja) | 1981-06-30 | 1981-06-30 | 半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS583198A (cg-RX-API-DMAC10.html) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59185098A (ja) * | 1983-04-04 | 1984-10-20 | Oki Electric Ind Co Ltd | 自己診断回路内蔵型半導体メモリ装置 |
| JPS60109099A (ja) * | 1983-11-18 | 1985-06-14 | Nippon Telegr & Teleph Corp <Ntt> | 半導体メモリ装置の欠陥検出切替方式 |
| JPS63164100A (ja) * | 1986-12-26 | 1988-07-07 | Hiroshi Nakamura | 半導体集積回路メモリ |
| DE3728521A1 (de) * | 1987-08-26 | 1989-03-09 | Siemens Ag | Anordnung und verfahren zur feststellung und lokalisierung von fehlerhaften schaltkreisen eines speicherbausteins |
| JP3623004B2 (ja) * | 1994-03-30 | 2005-02-23 | 松下電器産業株式会社 | 電圧レベル変換回路 |
-
1981
- 1981-06-30 JP JP56101588A patent/JPS583198A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS583198A (ja) | 1983-01-08 |
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