JPS6142351B2 - - Google Patents
Info
- Publication number
- JPS6142351B2 JPS6142351B2 JP771781A JP771781A JPS6142351B2 JP S6142351 B2 JPS6142351 B2 JP S6142351B2 JP 771781 A JP771781 A JP 771781A JP 771781 A JP771781 A JP 771781A JP S6142351 B2 JPS6142351 B2 JP S6142351B2
- Authority
- JP
- Japan
- Prior art keywords
- memory
- volatile
- read
- nonvolatile
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015654 memory Effects 0.000 claims description 73
- 238000013500 data storage Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 230000014759 maintenance of location Effects 0.000 description 15
- 239000003990 capacitor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000007704 transition Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 2
- 241001191009 Gymnomyza Species 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- XUFQPHANEAPEMJ-UHFFFAOYSA-N famotidine Chemical compound NC(N)=NC1=NC(CSCCC(N)=NS(N)(=O)=O)=CS1 XUFQPHANEAPEMJ-UHFFFAOYSA-N 0.000 description 1
- HLXGRHNZZSMNRX-UHFFFAOYSA-M sodium;3-(n-ethyl-3,5-dimethylanilino)-2-hydroxypropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CC(O)CN(CC)C1=CC(C)=CC(C)=C1 HLXGRHNZZSMNRX-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
Landscapes
- Read Only Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP771781A JPS57123594A (en) | 1981-01-20 | 1981-01-20 | Readout control circuit for semiconductor nonvolatile memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP771781A JPS57123594A (en) | 1981-01-20 | 1981-01-20 | Readout control circuit for semiconductor nonvolatile memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57123594A JPS57123594A (en) | 1982-08-02 |
JPS6142351B2 true JPS6142351B2 (enrdf_load_stackoverflow) | 1986-09-20 |
Family
ID=11673481
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP771781A Granted JPS57123594A (en) | 1981-01-20 | 1981-01-20 | Readout control circuit for semiconductor nonvolatile memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57123594A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63104141U (enrdf_load_stackoverflow) * | 1986-12-25 | 1988-07-06 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5936393A (ja) * | 1982-08-20 | 1984-02-28 | Mitsubishi Electric Corp | 不揮発性半導体メモリ装置 |
JPS60133750A (ja) * | 1983-12-21 | 1985-07-16 | Matsushita Electronics Corp | メモリ装置 |
FR2600809B1 (fr) * | 1986-06-24 | 1988-08-19 | Eurotechnique Sa | Dispositif de detection du fonctionnement du systeme de lecture d'une cellule-memoire eprom ou eeprom |
JPH04192196A (ja) * | 1990-11-26 | 1992-07-10 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
JP2011238346A (ja) * | 2011-06-16 | 2011-11-24 | Sandisk Il Ltd | フラッシュメモリ内のエラーから復旧するための方法 |
-
1981
- 1981-01-20 JP JP771781A patent/JPS57123594A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63104141U (enrdf_load_stackoverflow) * | 1986-12-25 | 1988-07-06 |
Also Published As
Publication number | Publication date |
---|---|
JPS57123594A (en) | 1982-08-02 |
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