JPS6141091Y2 - - Google Patents
Info
- Publication number
- JPS6141091Y2 JPS6141091Y2 JP1980168972U JP16897280U JPS6141091Y2 JP S6141091 Y2 JPS6141091 Y2 JP S6141091Y2 JP 1980168972 U JP1980168972 U JP 1980168972U JP 16897280 U JP16897280 U JP 16897280U JP S6141091 Y2 JPS6141091 Y2 JP S6141091Y2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- electron beam
- photomask
- mask
- exposure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 3
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 description 14
- 239000000758 substrate Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000006664 bond formation reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1980168972U JPS6141091Y2 (OSRAM) | 1980-11-25 | 1980-11-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1980168972U JPS6141091Y2 (OSRAM) | 1980-11-25 | 1980-11-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5790440U JPS5790440U (OSRAM) | 1982-06-03 |
| JPS6141091Y2 true JPS6141091Y2 (OSRAM) | 1986-11-22 |
Family
ID=29527510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1980168972U Expired JPS6141091Y2 (OSRAM) | 1980-11-25 | 1980-11-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6141091Y2 (OSRAM) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5288118B2 (ja) * | 2009-01-14 | 2013-09-11 | 大日本印刷株式会社 | フォトマスクブランクス、フォトマスクの位置合わせ方法、両面フォトマスクの製造方法 |
-
1980
- 1980-11-25 JP JP1980168972U patent/JPS6141091Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5790440U (OSRAM) | 1982-06-03 |
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