JPS6140140B2 - - Google Patents
Info
- Publication number
- JPS6140140B2 JPS6140140B2 JP55145793A JP14579380A JPS6140140B2 JP S6140140 B2 JPS6140140 B2 JP S6140140B2 JP 55145793 A JP55145793 A JP 55145793A JP 14579380 A JP14579380 A JP 14579380A JP S6140140 B2 JPS6140140 B2 JP S6140140B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- layer
- region
- type
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 41
- 238000009792 diffusion process Methods 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 238000000605 extraction Methods 0.000 description 13
- 238000002955 isolation Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14579380A JPS5660049A (en) | 1980-10-20 | 1980-10-20 | Manufacture of semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14579380A JPS5660049A (en) | 1980-10-20 | 1980-10-20 | Manufacture of semiconductor integrated circuit device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5780773A Division JPS579222B2 (de) | 1973-05-25 | 1973-05-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5660049A JPS5660049A (en) | 1981-05-23 |
| JPS6140140B2 true JPS6140140B2 (de) | 1986-09-08 |
Family
ID=15393281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14579380A Granted JPS5660049A (en) | 1980-10-20 | 1980-10-20 | Manufacture of semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5660049A (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58135965U (ja) * | 1982-03-05 | 1983-09-13 | 日本電気ホームエレクトロニクス株式会社 | ラテラル型トランジスタ素子 |
| JP2002026138A (ja) * | 2000-07-07 | 2002-01-25 | Sanyo Electric Co Ltd | 半導体装置 |
| JP2002324846A (ja) | 2001-04-25 | 2002-11-08 | Sanken Electric Co Ltd | 半導体装置及びその製造方法 |
-
1980
- 1980-10-20 JP JP14579380A patent/JPS5660049A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5660049A (en) | 1981-05-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0093304B1 (de) | Integrierte Halbleiterschaltung und Verfahren zur Herstellung derselben | |
| US4038680A (en) | Semiconductor integrated circuit device | |
| US4484388A (en) | Method for manufacturing semiconductor Bi-CMOS device | |
| JPH06151859A (ja) | 半導体装置 | |
| US3414782A (en) | Semiconductor structure particularly for performing unipolar transistor functions in integrated circuits | |
| JPS60194558A (ja) | 半導体装置の製造方法 | |
| US3510736A (en) | Integrated circuit planar transistor | |
| JPS6140140B2 (de) | ||
| US4127864A (en) | Semiconductor device | |
| US4692784A (en) | Dielectric insulation type semiconductor integrated circuit having low withstand voltage devices and high withstand voltage devices | |
| US3959812A (en) | High-voltage semiconductor integrated circuit | |
| JPS6133261B2 (de) | ||
| JPS6058633A (ja) | 半導体集積回路装置 | |
| JP2518929B2 (ja) | バイポ―ラ型半導体集積回路 | |
| JP2752655B2 (ja) | バイポーラ集積回路装置 | |
| JPH10135235A (ja) | 半導体装置の製造方法 | |
| JPH0425711B2 (de) | ||
| JP2765864B2 (ja) | 半導体装置の製造方法 | |
| JPH0157506B2 (de) | ||
| JPS644349B2 (de) | ||
| JPS6031105B2 (ja) | 半導体装置 | |
| JPS6152575B2 (de) | ||
| RU1808147C (ru) | Способ изготовлени монолитных интегральных схем | |
| JPS639667B2 (de) | ||
| JPH02232929A (ja) | 埋込層を備えた半導体装置 |