JPS6138871B2 - - Google Patents
Info
- Publication number
- JPS6138871B2 JPS6138871B2 JP54123530A JP12353079A JPS6138871B2 JP S6138871 B2 JPS6138871 B2 JP S6138871B2 JP 54123530 A JP54123530 A JP 54123530A JP 12353079 A JP12353079 A JP 12353079A JP S6138871 B2 JPS6138871 B2 JP S6138871B2
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- guard ring
- semiconductor layer
- layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12353079A JPS5646570A (en) | 1979-09-26 | 1979-09-26 | Avalanche photodiode |
| US06/187,744 US4383266A (en) | 1979-09-26 | 1980-09-16 | Avalanche photo diode |
| GB8031240A GB2060257B (en) | 1979-09-26 | 1980-09-26 | Guard rings for avalanche photo diodes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12353079A JPS5646570A (en) | 1979-09-26 | 1979-09-26 | Avalanche photodiode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5646570A JPS5646570A (en) | 1981-04-27 |
| JPS6138871B2 true JPS6138871B2 (enrdf_load_stackoverflow) | 1986-09-01 |
Family
ID=14862884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12353079A Granted JPS5646570A (en) | 1979-09-26 | 1979-09-26 | Avalanche photodiode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5646570A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57190370A (en) * | 1981-05-18 | 1982-11-22 | Fujitsu Ltd | Semiconductor light receiving element |
| US5098851A (en) * | 1989-02-10 | 1992-03-24 | Hitachi, Ltd. | Fabricating a semiconductor photodetector by annealing to smooth the PN junction |
-
1979
- 1979-09-26 JP JP12353079A patent/JPS5646570A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5646570A (en) | 1981-04-27 |
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