JPS6138160Y2 - - Google Patents

Info

Publication number
JPS6138160Y2
JPS6138160Y2 JP1981191201U JP19120181U JPS6138160Y2 JP S6138160 Y2 JPS6138160 Y2 JP S6138160Y2 JP 1981191201 U JP1981191201 U JP 1981191201U JP 19120181 U JP19120181 U JP 19120181U JP S6138160 Y2 JPS6138160 Y2 JP S6138160Y2
Authority
JP
Japan
Prior art keywords
addresses
input
write
test
address
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1981191201U
Other languages
English (en)
Japanese (ja)
Other versions
JPS5897800U (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP19120181U priority Critical patent/JPS5897800U/ja
Publication of JPS5897800U publication Critical patent/JPS5897800U/ja
Application granted granted Critical
Publication of JPS6138160Y2 publication Critical patent/JPS6138160Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Static Random-Access Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
JP19120181U 1981-12-22 1981-12-22 メモリ装置 Granted JPS5897800U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19120181U JPS5897800U (ja) 1981-12-22 1981-12-22 メモリ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19120181U JPS5897800U (ja) 1981-12-22 1981-12-22 メモリ装置

Publications (2)

Publication Number Publication Date
JPS5897800U JPS5897800U (ja) 1983-07-02
JPS6138160Y2 true JPS6138160Y2 (US06534493-20030318-C00166.png) 1986-11-04

Family

ID=30104675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19120181U Granted JPS5897800U (ja) 1981-12-22 1981-12-22 メモリ装置

Country Status (1)

Country Link
JP (1) JPS5897800U (US06534493-20030318-C00166.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009176375A (ja) * 2008-01-25 2009-08-06 Toshiba Corp 不揮発性半導体記憶装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147924A (en) * 1975-06-13 1976-12-18 Fujitsu Ltd Memory unit
JPS53132273A (en) * 1977-04-22 1978-11-17 Mitsubishi Electric Corp Semiconductor memory device
JPS5585957A (en) * 1978-11-25 1980-06-28 Fujitsu Ltd Logic circuit for test bit selection

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147924A (en) * 1975-06-13 1976-12-18 Fujitsu Ltd Memory unit
JPS53132273A (en) * 1977-04-22 1978-11-17 Mitsubishi Electric Corp Semiconductor memory device
JPS5585957A (en) * 1978-11-25 1980-06-28 Fujitsu Ltd Logic circuit for test bit selection

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009176375A (ja) * 2008-01-25 2009-08-06 Toshiba Corp 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
JPS5897800U (ja) 1983-07-02

Similar Documents

Publication Publication Date Title
US5917753A (en) Sensing circuitry for reading and verifying the contents of electrically programmable/erasable non-volatile memory cells
EP0293339A1 (en) Nonvolatile memory device with a high number of cycle programming endurance
JP3866036B2 (ja) 単一の入出力ピンによるマルチレベルデータの書込み及び読取りが可能な記憶集積回路
US3824564A (en) Integrated threshold mnos memory with decoder and operating sequence
US4408305A (en) Memory with permanent array division capability
JPH07287986A (ja) 列電圧保持回路を有する集積回路メモリ
US4680734A (en) Semiconductor memory device
JPH03272100A (ja) 不揮発性半導体記憶装置
JPS595989B2 (ja) スタティック型ランダムアクセスメモリ
KR930000898B1 (ko) 고속으로 데이타를 소거할 수 있는 반도체 메모리
JPH07111824B2 (ja) 半導体メモリ
KR100327781B1 (ko) 반도체메모리장치
JPS6138160Y2 (US06534493-20030318-C00166.png)
JPH0444360B2 (US06534493-20030318-C00166.png)
JPH0468720B2 (US06534493-20030318-C00166.png)
JPH0516119B2 (US06534493-20030318-C00166.png)
JP3441154B2 (ja) 半導体記憶装置
KR0178001B1 (ko) 강유전체 메모리
JPS6126997A (ja) 半導体記憶装置
JPH025290A (ja) 半導体メモリ
JPH11176153A (ja) 半導体集積回路
JPH0230120B2 (US06534493-20030318-C00166.png)
JPH09162365A (ja) ダイナミックランダムアクセスメモリ
JP2618065B2 (ja) 半導体回路装置
KR20000051065A (ko) 반도체 메모리의 오버 드라이브 회로