JPS6137775B2 - - Google Patents

Info

Publication number
JPS6137775B2
JPS6137775B2 JP16171380A JP16171380A JPS6137775B2 JP S6137775 B2 JPS6137775 B2 JP S6137775B2 JP 16171380 A JP16171380 A JP 16171380A JP 16171380 A JP16171380 A JP 16171380A JP S6137775 B2 JPS6137775 B2 JP S6137775B2
Authority
JP
Japan
Prior art keywords
substrate
protective resin
film
resin film
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP16171380A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5785230A (en
Inventor
Eiji Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16171380A priority Critical patent/JPS5785230A/ja
Publication of JPS5785230A publication Critical patent/JPS5785230A/ja
Publication of JPS6137775B2 publication Critical patent/JPS6137775B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP16171380A 1980-11-17 1980-11-17 Substrate treatment Granted JPS5785230A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16171380A JPS5785230A (en) 1980-11-17 1980-11-17 Substrate treatment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16171380A JPS5785230A (en) 1980-11-17 1980-11-17 Substrate treatment

Publications (2)

Publication Number Publication Date
JPS5785230A JPS5785230A (en) 1982-05-27
JPS6137775B2 true JPS6137775B2 (cs) 1986-08-26

Family

ID=15740456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16171380A Granted JPS5785230A (en) 1980-11-17 1980-11-17 Substrate treatment

Country Status (1)

Country Link
JP (1) JPS5785230A (cs)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06100825B2 (ja) * 1985-08-29 1994-12-12 富士通株式会社 パタ−ン形成方法
JP7602924B2 (ja) * 2021-02-02 2024-12-19 東京エレクトロン株式会社 基板処理装置、基板処理システム、基板処理方法及びコンピュータ記憶媒体

Also Published As

Publication number Publication date
JPS5785230A (en) 1982-05-27

Similar Documents

Publication Publication Date Title
US3962004A (en) Pattern definition in an organic layer
JP3302120B2 (ja) レジスト用剥離液
US3705055A (en) Method of descumming photoresist patterns
JPH033378B2 (cs)
US4971715A (en) Phenolic-free stripping composition and use thereof
US3944421A (en) Process for simultaneous development and etch of photoresist and substrate
US4202703A (en) Method of stripping photoresist
JP2679618B2 (ja) 剥離液組成物および剥離洗浄方法
US7144673B2 (en) Effective photoresist stripping process for high dosage and high energy ion implantation
JPS6137775B2 (cs)
TWI389195B (zh) A substrate for processing a substrate, and a method of processing a substrate
US4360585A (en) Method of etching polymethyl methacrylate
US2850411A (en) Method for removing coatings from film base
JPS5868930A (ja) 半導体装置の製造方法
JP3348332B2 (ja) リソグラフィー方法
US4352839A (en) Method of forming a layer of polymethyl methacrylate on a surface of silicon dioxide
JPS60147736A (ja) フエノ−ル系樹脂含有感光性組成物の剥離液
JP2613755B2 (ja) 基板の処理方法
JPH08298253A (ja) ペリクル膜の製造時に使用した基板の洗浄方法
JPS62150350A (ja) パタ−ン形成方法
KR0130386B1 (ko) 포토레지스트 패턴 형성방법
JPS58188131A (ja) レジストと基板との密着性を増強する方法
JPS6140102B2 (cs)
JPH0836258A (ja) 感光性エレメント、その積層方法及びレジスト形成方法
JPH11231554A (ja) レジスト剥離方法とその装置