JPS6137775B2 - - Google Patents
Info
- Publication number
- JPS6137775B2 JPS6137775B2 JP16171380A JP16171380A JPS6137775B2 JP S6137775 B2 JPS6137775 B2 JP S6137775B2 JP 16171380 A JP16171380 A JP 16171380A JP 16171380 A JP16171380 A JP 16171380A JP S6137775 B2 JPS6137775 B2 JP S6137775B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- protective resin
- film
- resin film
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 44
- 229920005989 resin Polymers 0.000 claims description 30
- 239000011347 resin Substances 0.000 claims description 30
- 230000001681 protective effect Effects 0.000 claims description 29
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000003672 processing method Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 15
- 229920002451 polyvinyl alcohol Polymers 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 235000019441 ethanol Nutrition 0.000 description 5
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002952 polymeric resin Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Description
【発明の詳細な説明】
本発明は基板処理方法に係り、詳しくはフオ
ト・マスク或るいは半導体等の基板を保管する際
の保護樹脂膜の形成方法及び該保護樹脂膜を有す
る基板を使用する際の前記保護樹脂膜の剥離方法
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a substrate processing method, and more specifically, a method for forming a protective resin film when storing a substrate such as a photo mask or a semiconductor, and a method for using a substrate having the protective resin film. The present invention relates to a method for peeling off the protective resin film.
例えばパターン形式の完了したマスク基板は、
該基板を保護樹脂膜で覆うことにより、保管や運
搬に際して、基板面が機械的な衝撃や汚染等によ
り損傷せしめられることの防止がなされる。 For example, a mask board with a completed pattern,
By covering the substrate with a protective resin film, the substrate surface is prevented from being damaged by mechanical impact, contamination, etc. during storage or transportation.
従来から用いられている保護樹脂膜には塩化ビ
ニール系の保護樹脂膜がある。この塩化ビニール
系保護樹脂膜は可塑性を有するので剥離は極めて
容易であるが、絶縁性が極めて高いために剥離に
際してマスク基板と該保護樹脂膜の摩擦によつて
静電気が生じ、放電のためにマスク・パターンに
短絡や焼去等の障害を発生せしめていた。そこで
最近では吸湿性を有し、そのため絶縁性が余り高
くなく、従つて剥離に際して静電気を生ずること
のない、例えばポリ・ビニール・アルコール等の
ビニール・アルコール系の高分子樹脂が保護樹脂
膜として用いられるようになつてきた。然し該ビ
ニール・アルコール系の高分子樹脂膜はマスク基
板に対する密着性が極めてよく、且つ可塑性を持
たないために、該樹脂膜を機械的に剥離すること
が困難であつた。そのため従来は該ポリ・ビニー
ル・アルコール膜で覆つて保管されていたマスク
基板を使用する際には、ポリ・ビニール・アルコ
ールが水溶性であることを利用して、該マスク基
板を60〜80〔℃〕程度の温水中で処理してポリ・
ビニール・アルコール膜を溶解除去する方法が用
いられていた。然しこのような湯洗い等の湿式の
除去方法に於ては、水に溶けて、マスク基板に形
成されているマスク・パターンとガラス基板間に
形成されている角部等に浸入したポリ・ビニー
ル・アルコールを完全に除去するためには、何段
も洗浄を行わねばならず、工程が煩雑になり且つ
作業工数が多くかかるという問題があつた。 Conventionally used protective resin films include vinyl chloride-based protective resin films. This vinyl chloride-based protective resin film has plasticity, so it is extremely easy to peel off, but because it has extremely high insulating properties, when it is peeled off, static electricity is generated due to friction between the mask substrate and the protective resin film, and the mask is discharged.・This caused problems such as short circuits and burning out of the pattern. Therefore, recently, vinyl/alcohol-based polymer resins such as polyvinyl alcohol, which have hygroscopic properties, do not have very high insulation properties, and therefore do not generate static electricity when peeled off, have been used as protective resin films. I'm starting to be able to do it. However, since the vinyl/alcohol-based polymer resin film has extremely good adhesion to the mask substrate and does not have plasticity, it has been difficult to mechanically peel off the resin film. Therefore, when using a mask substrate that was conventionally stored covered with the polyvinyl alcohol film, it is necessary to take advantage of the fact that polyvinyl alcohol is water-soluble to coat the mask substrate with a film of 60 to 80 [ Polymer is treated in warm water at a temperature of
A method was used to dissolve and remove the vinyl/alcohol film. However, in such a wet removal method such as washing with hot water, polyvinyl resin that has dissolved in water and penetrated into the corners formed between the mask pattern formed on the mask substrate and the glass substrate. - In order to completely remove alcohol, it is necessary to perform multiple stages of cleaning, which poses the problem of complicating the process and requiring a large number of man-hours.
本発明は上記問題点に鑑み、基板との密着性に
優れ且つ可塑性を持たない保護樹脂膜を溶解除去
等の湿式の除去法を用いず、機械的に剥離除去す
ることを可能にする保護樹脂膜の形成方法及び該
保護樹脂膜の剥離方法を提供する。 In view of the above-mentioned problems, the present invention provides a protective resin that has excellent adhesion to a substrate and makes it possible to mechanically peel off and remove a non-plastic protective resin film without using a wet removal method such as dissolving. A method for forming a film and a method for peeling off the protective resin film are provided.
即ち本発明の基板処理方法はフオト・マスク或
るいは半導体等の基板を保管するに際して、該基
板の所望の領域にフオト・レジスト膜を被着して
後、該基板を覆う保護樹脂膜を形成し、該保護樹
脂膜を有する基板を使用するに際して、該基板上
のフオト・レジスト膜に保護樹脂膜を通して紫外
線を照射し、該フオト・レジスト膜の光反応によ
り生ずるガスにより基板と保護樹脂膜間に空隙部
を形成せしめ、該空隙部から保護樹脂膜の剥離を
行うことを特徴とする。 That is, in the substrate processing method of the present invention, when storing a photo mask or a substrate such as a semiconductor, a photo resist film is applied to a desired area of the substrate, and then a protective resin film is formed to cover the substrate. However, when using a substrate having the protective resin film, the photoresist film on the substrate is irradiated with ultraviolet rays through the protective resin film, and the gas generated by the photoreaction of the photoresist film creates a gap between the substrate and the protective resin film. The method is characterized in that a void is formed in the film, and the protective resin film is peeled from the void.
以下本発明をフオト・マスクに適用する際の一
実施例について詳細に説明する。 An embodiment in which the present invention is applied to a photo mask will be described in detail below.
本発明の基板処理方法に於ては、マスク・パタ
ーンの形成が完了したフオト・マスク基板を保管
する場合の保護樹脂膜を形成するに際して、先ず
マスク基板に於ける露光がなされない領域、例え
ば四隅の10〔mm〕角程度の領域の片面又は両面
に、はけ塗り又は浸漬塗布により10〜数10〔μ
ｍ〕程度の厚さの紫外線露光用フオト・レジスト
膜（ポジ型、ネガ型何れでも良い）を被着する。
次いで該フオト・レジスト膜を乾燥窒素中等に於
て１〜２〔時間〕程度乾燥した後、該マスク基板
を例えばポリビニール・アルコール10〔wt％〕
水溶液：エチル・アルコール＝７：３の組成を有
するポリビニール・アルコール溶液中に浸漬し引
き上げることにより、前記マスク基板上に該マス
ク基板の全面を覆うポリビニール・アルコール層
を形成する。そして該マスク基板を乾燥窒素等の
乾燥雰囲気中にたてかけて20〜30〔分〕程度放置
することにより、マスク基板上に該基板全面を覆
う平均の厚さ50〜100〔μｍ〕程度の可塑性を時
たないポリビニール・アルコール皮膜からなる保
護樹脂膜が形成される。なお以上の操作は総て紫
外線の遮断された室内（通常のフオト・プロセス
に於ける暗室内）で行われる。そして該マスク基
板は上記ポリビニール・アルコール皮膜を保護樹
脂膜として保管容器中に格納される。 In the substrate processing method of the present invention, when forming a protective resin film when storing a photomask substrate on which a mask pattern has been formed, first, areas of the mask substrate that will not be exposed to light, such as the four corners, are Apply a coating of 10 to several 10 [μ
A photoresist film for ultraviolet exposure (either positive type or negative type may be used) with a thickness of about 1.0 m is applied.
Next, after drying the photoresist film in dry nitrogen or the like for about 1 to 2 hours, the mask substrate is coated with polyvinyl alcohol 10 [wt%], for example.
A polyvinyl alcohol layer covering the entire surface of the mask substrate is formed on the mask substrate by immersing it in a polyvinyl alcohol solution having a composition of aqueous solution: ethyl alcohol = 7:3 and pulling it up. Then, by standing the mask substrate in a dry atmosphere such as dry nitrogen and leaving it for about 20 to 30 [minutes], an average thickness of about 50 to 100 [μm] covering the entire surface of the mask substrate is formed. A protective resin film consisting of a polyvinyl alcohol film that does not lose its plasticity is formed. All of the above operations are performed in a room where ultraviolet rays are blocked (a dark room in a normal photo process). The mask substrate is then stored in a storage container using the polyvinyl alcohol film as a protective resin film.
又該フオト・マスク基板を使用する際には、該
マスク基板を通常の紫外線露光に用いる水銀ラン
プ或るいはキセノン・ランプ等から照射されてい
る紫外光中に数秒間さらして、マスク基板上に形
成されているフオト・レジスト膜にポリビニー
ル・アルコール皮膜を通して被光せしめる。該被
光によりフオト・レジストは光反応を起し窒素ガ
スを発生する。そして該窒素ガスはポリビニー
ル・アルコール膜を押し上げ、フオト・レジスト
膜被着領域近傍のマスク基板とポリビニール・ア
ルコール皮膜を剥離せしめる。従つて該領域を起
点として機械的に剥離を行へば、マスク基板全面
のポリビニール・アルコール皮膜を容易に除去す
ることができる。そして該剥離除去を行つたマス
ク基板上にはポリビニール・アルコール皮膜の破
片が残留することがないので、ポリビニール・ア
ルコール皮膜剥離除去後マスク基板の洗浄を行う
必要はない。 When using the photomask substrate, the mask substrate is exposed for a few seconds to ultraviolet light emitted from a mercury lamp or a xenon lamp used for normal ultraviolet exposure, and then the mask substrate is exposed. The formed photoresist film is exposed to light through a polyvinyl alcohol film. When exposed to the light, the photoresist undergoes a photoreaction and generates nitrogen gas. The nitrogen gas then pushes up the polyvinyl alcohol film and causes the polyvinyl alcohol film to be separated from the mask substrate near the area where the photoresist film is applied. Therefore, by performing mechanical peeling starting from this area, the polyvinyl alcohol film on the entire surface of the mask substrate can be easily removed. Since no fragments of the polyvinyl alcohol film remain on the mask substrate after the peeling and removal, there is no need to clean the mask substrate after removing the polyvinyl alcohol film.
上記実施例に於ては保護樹脂膜としてポリビニ
ール・アルコール膜を使用する場合について説明
したが、本発明の方法は上記以外の可塑性を持た
ない保護樹脂膜にも適用できる。又本発明はフオ
ト・マスク基板に限らず半導体基板にも有効であ
る。 In the above embodiments, the case where a polyvinyl alcohol film is used as the protective resin film has been described, but the method of the present invention can also be applied to other protective resin films that do not have plasticity. Further, the present invention is effective not only for photo mask substrates but also for semiconductor substrates.
以上説明したように本発明によれば、保護樹脂
膜を溶解等の湿式の除去法を用いずに、機械的に
容易に、且つ完全に剥離除去することができるの
で、フオト・マスク或るいは半導体装置の製造工
程の簡略化が図れる。 As explained above, according to the present invention, the protective resin film can be mechanically easily and completely peeled off without using wet removal methods such as dissolution, so it is possible to remove the protective resin film mechanically easily and completely. The manufacturing process of a semiconductor device can be simplified.
Claims (1)
管するに際して、該基板の所望の領域にフオト・
レジスト膜を被着して後、該基板を覆う保護樹脂
膜を形成し、該保護樹脂膜を有する基板を使用す
るに際して、該基板上のフオト・レジスト膜に保
護樹脂膜を通して紫外線を照射し、該フオト・レ
ジスト膜の光反応により生ずるガスにより、基板
と保護樹脂膜間に空隙部を形成せしめ、該空隙部
から保護樹脂膜の剥離を行うことを特徴とする基
板処理方法。1 When storing a photo mask or a substrate such as a semiconductor, place a photo mask on a desired area of the substrate.
After depositing the resist film, a protective resin film is formed to cover the substrate, and when the substrate having the protective resin film is used, the photoresist film on the substrate is irradiated with ultraviolet rays through the protective resin film, A substrate processing method comprising: forming a gap between the substrate and the protective resin film using a gas generated by a photoreaction of the photoresist film, and peeling the protective resin film from the gap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16171380A JPS5785230A (en) | 1980-11-17 | 1980-11-17 | Substrate treatment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16171380A JPS5785230A (en) | 1980-11-17 | 1980-11-17 | Substrate treatment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5785230A JPS5785230A (en) | 1982-05-27 |
| JPS6137775B2 true JPS6137775B2 (en) | 1986-08-26 |
Family
ID=15740456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16171380A Granted JPS5785230A (en) | 1980-11-17 | 1980-11-17 | Substrate treatment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5785230A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06100825B2 (en) * | 1985-08-29 | 1994-12-12 | 富士通株式会社 | Pattern formation method |
-
1980
- 1980-11-17 JP JP16171380A patent/JPS5785230A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5785230A (en) | 1982-05-27 |
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