JP3302120B2 - Stripper for resist - Google Patents
Stripper for resistInfo
- Publication number
- JP3302120B2 JP3302120B2 JP22041093A JP22041093A JP3302120B2 JP 3302120 B2 JP3302120 B2 JP 3302120B2 JP 22041093 A JP22041093 A JP 22041093A JP 22041093 A JP22041093 A JP 22041093A JP 3302120 B2 JP3302120 B2 JP 3302120B2
- Authority
- JP
- Japan
- Prior art keywords
- deposition film
- resist
- weight
- protective deposition
- stripping solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- Photosensitive Polymer And Photoresist Processing (AREA)
- Paints Or Removers (AREA)
- ing And Chemical Polishing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
【０００１】[0001]
【技術分野】本発明は、半導体装置製造工程中において
使用するレジスト用剥離液に関し、さらに詳しくは、ハ
ロゲン系ガスによる配線材料のドライエッチングの際に
形成せしめたレジストの側壁保護堆積膜を、配線材料を
腐食することなく剥離する目的で使用されるレジスト用
剥離液に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist stripping solution used in a semiconductor device manufacturing process, and more particularly, to a resist side wall protective deposition film formed in a dry etching of a wiring material with a halogen-based gas. The present invention relates to a resist stripping solution used for stripping a material without corrosion.
【０００２】[0002]
【背景技術】半導体装置製造工程中において、所要のレ
ジストのマスク形成を行った後、非マスク領域の導電層
のエッチングを行い配線パターンを形成せしめ、次いで
配線パターン上のレジスト層を含めて不要のレジスト層
を剥離液により除去する処理が必要とされる。2. Description of the Related Art In a semiconductor device manufacturing process, after a required resist mask is formed, a conductive layer in an unmasked region is etched to form a wiring pattern. A treatment for removing the resist layer with a stripping solution is required.
【０００３】近年、集積回路の高密度化により、高精度
の微細パターン形成に有利なアルカリ可溶性樹脂を主成
分としたレジストが使用されている。また、エッチング
技術としては、従来の化学薬品を用いたケミカルエッチ
ング技術に対し、より高密度の微細エッチングが可能な
ドライエッチング技術が使用され、これが主流となって
おり、そして、導電層のドライエッチングについてはハ
ロゲン系ガスを用いた異方性のドライエッチングが広く
利用されている。In recent years, with the increase in the density of integrated circuits, resists containing an alkali-soluble resin as a main component, which is advantageous for forming high-precision fine patterns, have been used. In addition, as the etching technique, a dry etching technique capable of higher density fine etching has been used as compared with the conventional chemical etching technique using chemicals, and this is the mainstream. For this, anisotropic dry etching using a halogen-based gas is widely used.
【０００４】このようなドライエッチングではレジスト
の側壁保護堆積膜を利用し異方性エッチングを可能とし
ているがこの側壁保護堆積膜は通常のレジストに比べ剥
離されにくくなるという問題があり、加えて、側壁保護
堆積膜に取り込まれたハロゲンラジカルやハロゲンイオ
ンは、エッチング終了後空気中に放置すると吸湿により
酸を発生し配線材料を腐食する。これは通常アフターコ
ロージョンと呼ばれており（Ｓｅｍｉｃｏｎｄｕｃｔｏ
ｒ Ｗｏｒｌｄ １９９１，１１，ｐ６２−６６）この
アフターコロージョンは近年配線材料として多用されて
いるＡｌ−Ｓｉ、Ａｌ−Ｓｉ−Ｃｕ等の合金において特
に、観察される。[0004] In such dry etching, anisotropic etching is made possible by utilizing a side wall protective deposition film of a resist. However, there is a problem that this side wall protective deposition film is less likely to be peeled off than a normal resist. Halogen radicals and halogen ions taken into the sidewall protective deposition film generate an acid by absorbing moisture and corrode the wiring material when left in air after etching. This is usually called after-corrosion (Semiconductor
r World 1991, 11, p62-66) This after-corrosion is particularly observed in alloys such as Al-Si and Al-Si-Cu which are frequently used as wiring materials in recent years.
【０００５】このような側壁保護堆積膜を除去しようと
する場合に、通常使用されている酸性剥離液やアルカリ
性剥離液を用いると下記の如き不都合な問題が見出され
る。第一に、酸性剥離液について言えば、例えばアルキ
ルベンゼンスルホン酸にフェノール化合物や塩素系溶
剤、芳香族炭化水素を配合した剥離液による場合には、
１００℃以上に加熱しても側壁保護堆積膜の除去はかな
り困難であるし、また、これらの酸性剥離液は水への溶
解性が低いため、剥離後、水との相溶性が良い有機溶剤
でリンスした後さらに、水洗するという操作を行わなけ
ればならず、工程が煩雑になる。そして、水洗時に発生
する酸性成分により配線材料を腐食するという問題もあ
る。また、代表的なアルカリ性剥離液である有機アミン
と各種有機溶剤とから成る剥離液を使用する場合も上記
の酸性剥離液の場合と同様に１００℃以上に加熱しても
側壁保護堆積膜の剥離にはかなりの困難を要するととも
に、これらのアルカリ性剥離液が水溶性であることか
ら、剥離後の水洗にあたり、アルカリ性成分による配線
材料の腐食が起るという問題もある。これらの結果、酸
性、アルカリ性のいずれの剥離液を用いた場合において
も、側壁保護堆積膜を完全に剥離することはできないた
め、残存したハロゲンラジカルやハロゲンイオンにより
アフターコロージョンの発生がしばしば、観察される。[0005] In the case of removing such a sidewall protective deposition film, the following disadvantageous problems are found when a commonly used acidic stripping solution or alkaline stripping solution is used. First, speaking of the acidic stripping solution, for example, in the case of using a stripping solution in which a phenol compound, a chlorine-based solvent, and an aromatic hydrocarbon are blended with alkylbenzenesulfonic acid,
Even if heated to 100 ° C. or more, removal of the side wall protective deposited film is quite difficult, and since these acidic stripping solutions have low solubility in water, organic solvents having good compatibility with water after stripping. After rinsing, the operation of rinsing with water must be performed, and the process becomes complicated. Further, there is a problem that the wiring material is corroded by an acidic component generated at the time of washing. Also, when a stripping solution comprising an organic amine, which is a typical alkaline stripping solution, and various organic solvents is used, similarly to the above-described acidic stripping solution, even if the film is heated to 100 ° C. or more, the side wall protective deposition film is stripped. This requires considerable difficulty, and since these alkaline stripping solutions are water-soluble, there is a problem in that the wiring material is corroded by an alkaline component upon washing with water after stripping. As a result, even when any of the acidic and alkaline stripping solutions is used, since the sidewall protective deposition film cannot be completely stripped, the occurrence of after-corrosion due to residual halogen radicals and halogen ions is often observed. You.
【０００６】また、プラズマ灰化後のレジスト残りをテ
トラメチルアンモニウムハイドロオキサイド（以下、Ｔ
ＭＡＨと略記する）の水溶液を用いて除去する方法が知
られているが、この方法によるとアルミニウムを含む基
体から成る導電層が激しく腐食されるという問題があっ
た。仮に、ＴＭＡＨの濃度を希薄にして導電層の腐食現
象を抑さえたとしてもＴＭＡＨが強アルカリのため、大
気中からの炭酸ガスの吸収により水溶液のｐＨが大きく
低下し側壁保護堆積膜の剥離は困難になる。The remaining resist after plasma ashing is treated with tetramethylammonium hydroxide (hereinafter referred to as T
A method using an aqueous solution of MAH (abbreviated as MAH) is known, but this method has a problem that a conductive layer formed of a substrate containing aluminum is severely corroded. Even if the concentration of TMAH is diluted to suppress the corrosion phenomenon of the conductive layer, since the TMAH is a strong alkali, the pH of the aqueous solution is greatly reduced due to absorption of carbon dioxide gas from the atmosphere, and the peeling of the sidewall protective deposition film is difficult. It becomes difficult.
【０００７】このような状況から、側壁保護堆積膜を容
易に剥離することができ、しかも、その際にアルミニウ
ムを含有している基体から成る導電層を腐食しない安定
なレジスト用剥離液の開発が要望されている。[0007] Under these circumstances, there has been a need to develop a stable resist stripping solution that can easily strip the sidewall protective deposition film and that does not corrode the conductive layer made of the aluminum-containing substrate. Requested.
【０００８】[0008]
【発明の開示】本発明者らは、上述の如き、従来技術に
おけるレジストの側壁保護堆積膜の除去についての技術
的課題を解決すべく鋭意研究を重ねた結果、（ａ）糖ア
ルコール、イソプロピルアルコール、ジメチルスルホキ
シドおよび１，３−ジメチル−２−イミダゾリジノンよ
りなる群から選ばれる物質少くとも１種と（ｂ）アルコ
ールアミンと（ｃ）水と必要に応じさらに、（ｄ）第４
級アンモニウム水酸化物とからなる溶液が側壁保護堆積
膜を容易に剥離し配線材料に対する非腐食性も高めると
いうことを見い出した。DISCLOSURE OF THE INVENTION As described above, the present inventors have conducted intensive studies to solve the technical problem of removing the protective film for protecting the side wall of the resist in the prior art, and as a result, (a) sugar alcohol, isopropyl alcohol , Dimethyl sulfoxide and 1,3-dimethyl-2-imidazolidinone, at least one substance selected from the group consisting of (b) an alcoholamine, (c) water, and, if necessary, (d) a fourth substance.
It has been found that a solution comprising a high-grade ammonium hydroxide easily peels off the sidewall protective deposition film and increases non-corrosion to the wiring material.
【０００９】すなわち、本発明は、レジストの側壁保護
堆積膜を除去するためのレジスト用剥離液であって、
（ａ）糖アルコール、イソプロピルアルコール、ジメチ
ルスルホキシドおよび１,３−ジメチル−２−イミダゾ
リジノンよりなる群から選ばれる物質少くとも１種と
（ｂ）アルコールアミンと（ｃ）水と必要に応じさら
に、（ｄ）第４級アンモニウム水酸化物とを含み、前記
（ａ）がジメチルスルホキシドである場合は、第４級ア
ンモニウム水酸化物を含むことを特徴とする、前記レジ
スト用剥離液を提供するものである。That is, the present invention provides a resist stripping solution for removing a side wall protective deposition film of a resist,
(A) at least one substance selected from the group consisting of sugar alcohols, isopropyl alcohol, dimethyl sulfoxide and 1,3-dimethyl-2-imidazolidinone, (b) alcoholamine, (c) water, and optionally , (D) a quaternary ammonium hydroxide, and when (a) is dimethyl sulfoxide, a quaternary ammonium hydroxide. Things.
【００１０】本発明に係るレジスト用剥離液は、有機ア
ミン水溶液の側壁保護堆積膜の剥離能と糖アルコールま
たは有機溶剤の配線材料に対する非腐食性を調和させる
とともに、第４級アンモニウム水酸化物の添加により側
壁保護堆積膜の剥離性を向上させ、高精度の回路配線を
製造することを可能にしたものである。以下に本発明を
詳しく説明する。[0010] The resist stripping solution according to the present invention balances the stripping ability of the side wall protective deposition film of the organic amine aqueous solution with the non-corrosiveness of the sugar alcohol or the organic solvent to the wiring material. The addition improves the releasability of the side wall protective deposition film, and makes it possible to manufacture highly accurate circuit wiring. Hereinafter, the present invention will be described in detail.
【００１１】上記の糖アルコールとしては、Ｄ−ソルビ
トール、アラビトール、マンニトール等があげられる。
上記の糖アルコール、イソプロピルアルコール、ジメチ
ルスルホキシド、１，３−ジメチル−２−イミダゾリジ
ノンは単独で用いてもまたは２種以上併用してもよい。The above sugar alcohols include D-sorbitol, arabitol, mannitol and the like.
The above sugar alcohol, isopropyl alcohol, dimethyl sulfoxide, and 1,3-dimethyl-2-imidazolidinone may be used alone or in combination of two or more.
【００１２】上記のアルコールアミンとしてはモノエタ
ノールアミン、ジエタノールアミン、トリエタノールア
ミン等があげられるが、これらは単独で用いてもまたは
２種以上併用してもよい。上記の第４級アンモニウム水
酸化物としては、水酸化アンモニウム、テトラメチルア
ンモニウムハイドロオキサイドおよびトリメチル（２−
ヒドロキシエチル）アンモニウムハイドロオキサイド等
があげられるが、これらは単独で用いることができ、ま
たは２種以上を併用することができる。Examples of the alcohol amine include monoethanolamine, diethanolamine, triethanolamine and the like. These may be used alone or in combination of two or more. Examples of the quaternary ammonium hydroxide include ammonium hydroxide, tetramethylammonium hydroxide and trimethyl (2-
Examples thereof include hydroxyethyl) ammonium hydroxide, and these can be used alone or in combination of two or more.
【００１３】本発明に係るレジスト用剥離液には、他の
成分を適宜添加して用いることができる。例えば、表面
張力を低下させるため、あるいは基板へのレジストの再
付着を防止するために常用の界面活性剤を添加すること
ができる。The resist stripping solution according to the present invention can be used by appropriately adding other components. For example, a conventional surfactant can be added to lower the surface tension or to prevent the resist from re-adhering to the substrate.
【００１４】本発明に係るレジスト用剥離液における各
成分の好ましい配合割合について言えば、これらは側壁
保護堆積膜や基板の性質に応じて決められる。通常、水
は、５重量％以上９９重量％未満、好ましくは７〜９５
重量％の配合割合で配合される。この場合、５重量％未
満では側壁保護堆積膜の除去能力が低下し、９９重量％
以上では配線材料が腐食されやすくなる。Regarding the preferred compounding ratio of each component in the resist stripping solution according to the present invention, these are determined according to the properties of the sidewall protective deposition film and the substrate. Usually, water is 5% by weight or more and less than 99% by weight, preferably 7-95%.
It is blended at a blending ratio of weight%. In this case, if it is less than 5% by weight, the ability to remove the side wall protective deposition film decreases, and
Above, the wiring material is easily corroded.
【００１５】また、アルコールアミンは、０．１重量％
以上８０重量％未満、好ましくは０．３〜５０重量％の
配合割合で配合される。この場合、０．１重量％未満で
は側壁保護堆積膜の除去能力が低下し、８０重量％以上
では配線材料が腐食されやすくなる。The alcohol amine is 0.1% by weight.
More than 80% by weight, preferably 0.3 to 50% by weight. In this case, if it is less than 0.1% by weight, the ability to remove the sidewall protective deposition film is reduced, and if it is more than 80% by weight, the wiring material is easily corroded.
【００１６】さらに、糖アルコール、イソプロピルアル
コール、ジメチルスルホキシドおよび１，３−ジメチル
−２−イミダゾリジノンから選ばれる物質の配合割合は
通常、１重量％以上９０重量％未満、好ましくは３〜８
０重量％である。この場合１重量％未満では配線材料が
腐食されやすくなり、９０重量％以上では側壁保護堆積
膜の除去能力が低下する。Further, the compounding ratio of a substance selected from sugar alcohol, isopropyl alcohol, dimethyl sulfoxide and 1,3-dimethyl-2-imidazolidinone is usually from 1% by weight to less than 90% by weight, preferably from 3 to 8% by weight.
0% by weight. In this case, if it is less than 1% by weight, the wiring material is easily corroded, and if it is more than 90% by weight, the ability to remove the sidewall protective deposition film is reduced.
【００１７】加えて、側壁保護堆積膜の除去能力を高め
る目的で配合される第４級アンモニウム水酸化物は０．
０１重量％以上２０重量％未満、好ましくは０．１〜２
重量％の割合で配合するのが好ましい。この場合０．０
１重量％未満では側壁保護堆積膜の除去能力の向上に対
する効果が期待できず、２０重量％以上では配線材料が
かえって、腐食されやすくなる。In addition, the quaternary ammonium hydroxide compounded for the purpose of enhancing the ability to remove the sidewall protective deposition film is 0.1%.
01 to less than 20% by weight, preferably 0.1 to 2%
It is preferable to mix them in a ratio of weight%. In this case 0.0
If the amount is less than 1% by weight, the effect of improving the ability to remove the sidewall protective deposition film cannot be expected, and if the amount is more than 20% by weight, the wiring material is rather susceptible to corrosion.
【００１８】本発明に係るレジスト用剥離液の好ましい
使用方法について言えば側壁保護堆積膜の残存する基板
をこのレジスト用剥離液に入れ、室温であるいは加熱し
て１〜１０分間程度浸漬した後、水洗するかイソプロピ
ルアルコール等の有機溶剤でリンス後水洗し乾燥する。With respect to a preferred method of using the resist stripping solution according to the present invention, the substrate having the sidewall protective deposition film remaining is put into the resist stripping solution and immersed at room temperature or with heating for about 1 to 10 minutes. Rinse with water or rinse with an organic solvent such as isopropyl alcohol, then rinse with water and dry.
【００１９】以下に、本発明の実施例を比較例とともに
掲げ、本発明をさらに詳細に説明する。なお、側壁保護
堆積膜の剥離状況、配線材料の腐食性およびアフターコ
ロージョンの発生状況の評価は次の２種の基板を用い膜
厚計、光学顕微鏡および走査型電子顕微鏡（ＳＥＭ）に
より行った。Hereinafter, the present invention will be described in more detail with reference to Examples of the present invention and Comparative Examples. The evaluation of the peeling state of the sidewall protective deposition film, the corrosiveness of the wiring material, and the occurrence state of after-corrosion were performed using a film thickness gauge, an optical microscope and a scanning electron microscope (SEM) using the following two types of substrates.
【００２０】基板作成例１ Ｓｉ基板上に絶縁膜であるＣＶＤ酸化膜を形成しその上
にＡｌ−Ｓｉ−Ｃｕ層（Ｓｉ含有率：１重量％、Ｃｕ含
有率：０．５重量％）を形成した。次にＡｌ−Ｓｉ−Ｃ
ｕ層上にポジ型フォトレジストを塗布（コーティング）
し露光、現像しレジストのマスクを形成した。この時の
ポジ型フォトレジストはノボラック系樹脂を主成分とし
たものであり、膜厚は１５０００Åである。そして１５
０℃で３０分間ポストベークを行った後、レジストマス
クに覆われていない導電層（非マスク領域）を塩素系ガ
スを用いたドライエッチングにより取り除いた。続いて
アッシング工程を経て側壁保護堆積膜以外のレジストを
除去し超純水洗浄を行った。Substrate Preparation Example 1 A CVD oxide film as an insulating film was formed on a Si substrate, and an Al-Si-Cu layer (Si content: 1% by weight, Cu content: 0.5% by weight) was formed thereon. Formed. Next, Al-Si-C
Apply positive photoresist on u layer (coating)
Then, exposure and development were performed to form a resist mask. At this time, the positive type photoresist mainly contains a novolak resin and has a film thickness of 15000 °. And 15
After performing post-baking at 0 ° C. for 30 minutes, the conductive layer (unmasked region) not covered with the resist mask was removed by dry etching using a chlorine-based gas. Subsequently, through an ashing process, the resist other than the sidewall protective deposition film was removed, and the substrate was washed with ultrapure water.
【００２１】基板作成例２ Ｓｉ基板上に絶縁膜であるＣＶＤ酸化膜を形成しその上
にＡｌ−Ｓｉ層（Ｓｉ含有率：１重量％）を形成した。
次にＡｌ−Ｓｉ層上にポジ型フォトレジストを塗布（コ
ーティング）し露光、現像しレジストのマスクを形成し
た。この時のポジ型フォトレジストはノボラック系樹脂
を主成分としたものであり、膜厚は１５０００Åであ
る。そして１５０℃で３０分間ポストベークを行った後
レジストマスクに覆われていない導電層（非マスク領
域）を塩素系ガスを用いたドライエッチングにより取り
除いた。続いてアッシング工程を経て側壁保護堆積膜以
外のレジストを除去し超純水洗浄を行った。Substrate Preparation Example 2 A CVD oxide film as an insulating film was formed on a Si substrate, and an Al-Si layer (Si content: 1% by weight) was formed thereon.
Next, a positive photoresist was applied (coated) on the Al-Si layer, exposed, and developed to form a resist mask. At this time, the positive type photoresist mainly contains a novolak resin and has a film thickness of 15000 °. Then, after post-baking at 150 ° C. for 30 minutes, the conductive layer (non-mask region) not covered with the resist mask was removed by dry etching using a chlorine-based gas. Subsequently, through an ashing process, the resist other than the sidewall protective deposition film was removed, and the substrate was washed with ultrapure water.
【００２２】[0022]
実施例１ トリエタノールアミン１．４ｗｔ％、Ｄ−ソルビトール
５ｗｔ％の水溶液中に基板作成例−１で作成した基板を
２３℃で１分間浸漬後、３分間水洗し側壁保護堆積膜の
剥離状況および配線材料の腐食性の評価を行った。その
結果側壁保護堆積膜は剥離され、パターニングされた導
電層表面の腐食は全く観察されなかった。Example 1 The substrate prepared in Substrate Preparation Example 1 was immersed in an aqueous solution of 1.4% by weight of triethanolamine and 5% by weight of D-sorbitol at 23 ° C. for 1 minute, washed with water for 3 minutes, and peeled off the side wall protective deposition film. The corrosiveness of the wiring material was evaluated. As a result, the sidewall protective deposition film was peeled off, and no corrosion of the patterned conductive layer surface was observed at all.
【００２３】実施例２ トリエタノールアミン０．３１ｗｔ％、イソプロピルア
ルコール７０ｗｔ％の水溶液中に基板作成例−１で作成
した基板を２３℃で１分間浸漬後、３分間水洗し側壁保
護堆積膜の剥離状況および配線材料の腐食性の評価を行
った。その結果側壁保護堆積膜は剥離され、パターニン
グされた導電層表面の腐食は全く観察されなかった。Example 2 The substrate prepared in Example-1 was immersed in an aqueous solution of 0.31% by weight of triethanolamine and 70% by weight of isopropyl alcohol at 23 ° C. for 1 minute, washed with water for 3 minutes, and peeled off the side wall protective deposition film. The situation and the corrosiveness of the wiring material were evaluated. As a result, the sidewall protective deposition film was peeled off, and no corrosion of the patterned conductive layer surface was observed at all.
【００２４】実施例３ ジメチルスルホキシド６３ｗｔ％、１，３−ジメチル−
２−イミダゾリジノン１８ｗｔ％、モノエタノールアミ
ン９ｗｔ％、テトラメチルアンモニウムハイドロオキサ
イド０．２４ｗｔ％の水溶液中に基板作成例−２で作成
した基板を２５℃で５分間浸漬後イソプロピルアルコー
ルで３分間リンス後３分間水洗し側壁保護堆積膜の剥離
状況および配線材料の腐食性の評価を行った。その結果
側壁保護堆積膜は剥離され、パターニングされた導電層
表面の腐食は全く観察されなかった。Example 3 63% by weight of dimethyl sulfoxide, 1,3-dimethyl-
The substrate prepared in Substrate Preparation Example-2 was immersed in an aqueous solution of 18% by weight of 2-imidazolidinone, 9% by weight of monoethanolamine, and 0.24% by weight of tetramethylammonium hydroxide at 25 ° C. for 5 minutes, and then rinsed with isopropyl alcohol for 3 minutes. Thereafter, the substrate was washed with water for 3 minutes to evaluate the peeling state of the sidewall protective deposition film and the corrosiveness of the wiring material. As a result, the sidewall protective deposition film was peeled off, and no corrosion of the patterned conductive layer surface was observed at all.
【００２５】実施例４ ジメチルスルホキシド８０ｗｔ％、モノエタノールアミ
ン１０ｗｔ％、テトラメチルアンモニウムハイドロオキ
サイド０．２４ｗｔ％の水溶液中に基板作成例−２で作
成した基板を２５℃で５分間浸漬後イソプロピルアルコ
ールで３分間リンス後３分間水洗し乾燥し側壁保護堆積
膜の剥離状況および配線材料の腐食性の評価を行った。
その結果側壁保護堆積膜は剥離され、パターニングされ
た導電層表面の腐食は全く観察されなかった。Example 4 The substrate prepared in Example 2 was immersed in an aqueous solution of 80% by weight of dimethyl sulfoxide, 10% by weight of monoethanolamine, and 0.24% by weight of tetramethylammonium hydroxide at 25 ° C. for 5 minutes, followed by isopropyl alcohol. After rinsing for 3 minutes, washing with water for 3 minutes and drying, the state of peeling of the sidewall protective deposition film and the corrosiveness of the wiring material were evaluated.
As a result, the sidewall protective deposition film was peeled off, and no corrosion of the patterned conductive layer surface was observed at all.
【００２６】比較例１ 市販剥離液−１（酸性剥離液）中に基板作成例−１で作
成した基板を１１０℃で、１０分間浸漬後水洗し側壁保
護堆積膜の剥離状況および配線材料の腐食性の評価を行
った。その結果側壁保護堆積膜は剥離されなかった。Comparative Example 1 The substrate prepared in Preparation Example 1 was immersed in a commercially available stripping solution-1 (acid stripping solution) at 110 ° C. for 10 minutes, washed with water, stripped of the side wall protective deposition film, and corroded wiring material. The sex was evaluated. As a result, the sidewall protective deposition film was not peeled off.
【００２７】比較例２ 市販剥離液−２（アルカリ性剥離液）中に基板作成例−
１で作成した基板を１００℃で、１０分間浸漬後水洗し
側壁保護堆積膜の剥離状況および配線材料の腐食性の評
価を行った。その結果側壁保護堆積膜は剥離されなかっ
た。Comparative Example 2 Preparation of substrate in commercial stripping solution-2 (alkaline stripping solution)
The substrate prepared in 1 was immersed at 100 ° C. for 10 minutes and then washed with water to evaluate the peeling state of the sidewall protective deposition film and the corrosiveness of the wiring material. As a result, the sidewall protective deposition film was not peeled off.
【００２８】比較例３ ２．４ｗｔ％のテトラメチルアンモニウムハイドロオキ
サイド水溶液２００ｍｌ中に基板作成例−１で作成した
基板を２３℃で、１分間浸漬後水洗し側壁保護堆積膜の
剥離状況および配線材料の腐食性の評価を行った。その
結果側壁保護堆積膜は剥離できたもののピット状の腐食
が多く観察された。COMPARATIVE EXAMPLE 3 The substrate prepared in Preparation Example 1 was immersed in 200 ml of a 2.4 wt% aqueous solution of tetramethylammonium hydroxide at 23 ° C. for 1 minute, washed with water, and peeled off the side wall protective deposition film and wiring material. Was evaluated for corrosiveness. As a result, although the sidewall protective deposition film could be peeled off, many pit-like corrosions were observed.
【００２９】比較例４ 市販剥離液−１（酸性剥離液）中に基板作成例−２で作
成した基板を１１０℃で、１０分間浸漬後水洗し側壁保
護堆積膜の剥離状況および配線材料の腐食性の評価を行
った。その結果側壁保護堆積膜は剥離されなかった。Comparative Example 4 The substrate prepared in Preparation Example 2 was immersed in a commercially available stripping solution-1 (acid stripping solution) at 110 ° C. for 10 minutes, washed with water, stripped of the sidewall protective deposition film, and corroded wiring material. The sex was evaluated. As a result, the sidewall protective deposition film was not peeled off.
【００３０】比較例５ 市販剥離液−２（アルカリ性剥離液）中に基板作成例−
２で作成した基板を１００℃で、１０分間浸漬後水洗し
側壁保護堆積膜の剥離状況および配線材料の腐食性の評
価を行った。その結果側壁保護堆積膜は剥離されなかっ
た。Comparative Example 5 Example of Substrate Preparation in Commercially Available Stripping Solution-2 (Alkaline Stripping Solution)
The substrate prepared in 2 was immersed at 100 ° C. for 10 minutes, washed with water, and the peeling state of the sidewall protective deposition film and the corrosiveness of the wiring material were evaluated. As a result, the sidewall protective deposition film was not peeled off.
【００３１】比較例６ ２．４ｗｔ％のテトラメチルアンモニウムハイドロオキ
サイド水溶液中に基板作成例−２で作成した基板を２３
℃で、１分間浸漬後水洗し側壁保護堆積膜の剥離状況お
よび配線材料の腐食性の評価を行った。その結果側壁保
護堆積膜は剥離できたもののピット状の腐食が多く観察
された。Comparative Example 6 The substrate prepared in Substrate Preparation Example 2 was placed in a 2.4 wt% aqueous solution of tetramethylammonium hydroxide,
After immersion in water at 1 ° C. for 1 minute, the film was washed with water, and the peeling state of the sidewall protective deposition film and the corrosiveness of the wiring material were evaluated. As a result, although the sidewall protective deposition film could be peeled off, many pit-like corrosions were observed.
【００３２】本発明に係るレジスト用の剥離液は、ハロ
ゲン系ガスによるドライエッチングの際に形成せしめた
レジストの側壁保護堆積膜に対する剥離性と配線材料に
対する非腐食性を高めることができるものであり、ま
た、アフターコロージョン防止性と大気中での安定性と
作業の簡便性等を備えた極めて優れた特性を有するもの
である。この剥離液は人体や環境に対し、悪影響を及ぼ
すことはない。The stripping solution for resist according to the present invention can enhance the stripping property of the resist formed at the time of dry etching with a halogen-based gas on the side wall protective deposition film and the non-corrosion property of the wiring material. It also has extremely excellent properties, such as anti-corrosion prevention, stability in air, and simplicity of operation. This stripping solution does not adversely affect the human body or the environment.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平２−43370（ＪＰ，Ａ) 特開 平４−124668（ＪＰ，Ａ) 特開 平５−94024（ＪＰ，Ａ) 特開 昭64−81950（ＪＰ，Ａ) 特開 昭63−163352（ＪＰ，Ａ) 特開 昭57−165834（ＪＰ，Ａ) 特開 昭63−121848（ＪＰ，Ａ) 特開 昭62−148953（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) G03F 7/42 ──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-2-43370 (JP, A) JP-A-4-124668 (JP, A) JP-A-5-94024 (JP, A) JP-A 64-64 81950 (JP, A) JP-A-63-163352 (JP, A) JP-A-57-165834 (JP, A) JP-A-63-121848 (JP, A) JP-A-62-148953 (JP, A) (58) Field surveyed (Int. Cl. 7 , DB name) G03F 7/42
Claims (4)
めのレジスト用剥離液であって、（ａ）糖アルコール、
イソプロピルアルコール、ジメチルスルホキシドおよび
１,３−ジメチル−２−イミダゾリジノンよりなる群か
ら選ばれる物質少くとも１種と（ｂ）アルコールアミン
と（ｃ）水と必要に応じさらに、（ｄ）第４級アンモニ
ウム水酸化物とを含み、前記（ａ）がジメチルスルホキ
シドである場合は、第４級アンモニウム水酸化物を含む
ことを特徴とする、前記レジスト用剥離液。1. A resist stripping solution for removing a side wall protective deposition film of a resist, comprising: (a) a sugar alcohol;
At least one substance selected from the group consisting of isopropyl alcohol, dimethyl sulfoxide and 1,3-dimethyl-2-imidazolidinone, (b) alcoholamine, (c) water and, if necessary, A quaternary ammonium hydroxide, and when (a) is dimethyl sulfoxide, a quaternary ammonium hydroxide.
アミン、ジエタノールアミン、トリエタノールアミンよ
りなる群より選ばれる請求項１記載のレジスト用剥離
液。2. The resist stripper according to claim 1, wherein the alcoholamine is selected from the group consisting of monoethanolamine, diethanolamine, and triethanolamine.
ある請求項１に記載のレジスト用剥離液。3. The resist remover according to claim 1, wherein the sugar alcohol is D-sorbitol.
化アンモニウム、テトラメチルアンモニウムハイドロオ
キサイドおよびトリメチル（２−ヒドロキシエチル）ア
ンモニウムハイドロオキサイドよりなる群より選ばれる
請求項１に記載のレジスト用剥離液。4. The resist stripping solution according to claim 1, wherein the quaternary ammonium hydroxide is selected from the group consisting of ammonium hydroxide, tetramethylammonium hydroxide and trimethyl (2-hydroxyethyl) ammonium hydroxide. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22041093A JP3302120B2 (en) | 1993-07-08 | 1993-07-08 | Stripper for resist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22041093A JP3302120B2 (en) | 1993-07-08 | 1993-07-08 | Stripper for resist |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0728254A JPH0728254A (en) | 1995-01-31 |
| JP3302120B2 true JP3302120B2 (en) | 2002-07-15 |
Family
ID=16750686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22041093A Expired - Fee Related JP3302120B2 (en) | 1993-07-08 | 1993-07-08 | Stripper for resist |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3302120B2 (en) |
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|---|---|
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