JPS60151639A - Stripping-off method of photoresist - Google Patents
Stripping-off method of photoresistInfo
- Publication number
- JPS60151639A JPS60151639A JP754684A JP754684A JPS60151639A JP S60151639 A JPS60151639 A JP S60151639A JP 754684 A JP754684 A JP 754684A JP 754684 A JP754684 A JP 754684A JP S60151639 A JPS60151639 A JP S60151639A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- stripped
- stripping
- stage
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
- H05K3/064—Photoresists
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は写真製版工程ＶＣおけるホトレジストの剥離
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] This invention relates to the removal of photoresist in a photolithography process VC.
従来この釉の方法として第１図に示すものがあった。図
において、（２）は１０σＣ以上の茜慝に温度全ヒげら
ねた専用剥離液、（３）は８０℃前後の温度にヒげられ
たトリクレン又けＭＫＫ （メチル−エチル−ケトン）
、！４１は（３）と同様のもの、Ｉ５１は常温のアセト
ン、＋６１は（５１と同様のもの、（７）は常温のＩＰ
Ａ （イソプロピルアルコール） 、ｔ８Ｈ−ｊｔ７１
と同様のもの、（１）はホトレジスＩ−に剥離するため
の部材で、（ａ）Ｉ′ｉ金属膜、（ｂ） ｆｆホトレジ
ストである。Conventionally, there was a method for making this glaze as shown in Figure 1. In the figure, (2) is a special stripping solution heated to a temperature of 10σ or higher, and (3) is MKK (methyl-ethyl-ketone) heated to a temperature of around 80℃.
,! 41 is the same as (3), I51 is acetone at room temperature, +61 is the same as (51), (7) is IP at room temperature.
A (isopropyl alcohol), t8H-jt71
(1) is a member for peeling off photoresist I-; (a) I'i metal film; (b) ff photoresist.
次に作用について説明する。ホトレジストを剥離するた
めの部材ｉｌ＋を１００°ＣＩ２を上の篩（品に温度を
一ヒげられ友専用剥離液（２）へ２〜３分間浸漬し、次
いで８０℃前後の温度に上げらねたトリクレン又けＭＥ
Ｋ（メチル−エチル−ケトン）：３）へ１分根度浸漬し
、引き続いて（３）と同様のもの（４）・＼１分程度・
浸漬し、次いで常温のアセトン（５）・＼１分程度授潰
し、引き続いて（５１と同様のもの（ｈ）へ１分根度反
潰し、次いテ常温のＩＰＡ （インフロヒルアルコール
）＋７１へ１分根度浸漬し、引き続いて（７）と同様の
もの（８）へ１分根度浸漬し、次いで乾燥させる。Next, the effect will be explained. Immerse the member il+ for removing photoresist on a sieve above 100°C CI2 for 2 to 3 minutes in the special stripping solution (2) for 2 to 3 minutes, then raise the temperature to around 80°C. Tatriclean Matatake ME
K (methyl-ethyl-ketone): Soak for 1 minute in 3), then soak in the same solution as in (3) (4) for about 1 minute.
Soak, then mash with room temperature acetone (5) for about 1 minute, then mash for 1 minute with the same material as 51 (h), then mash with room temperature IPA (Inflohir Alcohol) + 71 Then, soak in (8) similar to (7) for 1 minute, and then dry.
従来のホトレジストの剥離法！／′ｉ以上のような方法
が用いらｈでいるので、処理液の棹州が多い、処理温度
が１００℃以上になるので部材のホトレジスト下部に存
在する金属膜等がダメージ全骨ける ゛等の欠点があっ
た。Conventional photoresist removal method! Since the above methods are not used, there is a large amount of liquid in the processing solution, and since the processing temperature is over 100°C, the metal film, etc. under the photoresist of the component is damaged and completely destroyed. There was a drawback.
この発明は上記のような従来の方法の欠点全除去するた
めＶｃなさ′ｔまたもので、ホトレジストを塗布した部
材にホトレジスト剥離液全スプレーする前にホトレジス
トを露光した時間と同程虻の時間紫外純金照射し、その
後常隠のアルカリ溶液をスプレーすることｖｃＬす、ホ
トレジスト全剥離することが出来る方法ケ提供すること
？目的としている。In order to eliminate all the drawbacks of the conventional method as mentioned above, this invention also uses ultraviolet rays for the same amount of time as the exposure time of the photoresist before completely spraying the photoresist stripper onto the photoresist-coated member. Is there a way to completely remove the photoresist by irradiating pure gold and then spraying with a regular alkaline solution? The purpose is
以下、この発明の一実施例について説明する。 An embodiment of the present invention will be described below.
（１）はホトレジストを剥離する部材、＋９！ ｔｒｉ
紫外紫外線耐照射工程、（１０）けホトレジストに水酸
化ナトリウム（ＮａＯＴ（３′ｆ、Ｘプレーする工程、
ｔｌｌｌｆｄ乾燥工程である。(1) is a member that peels off photoresist, +9! tri
Ultraviolet UV irradiation resistance step, (10) step of applying sodium hydroxide (NaOT (3'f, X spray) to the photoresist,
tlllfd drying process.
捷た、（ｃ）は紫外線ランプ、（ｄ）は紫外線、（ｅ）
はスプレーである。(c) is an ultraviolet lamp, (d) is an ultraviolet light, (e)
is a spray.
この発明の作用について説明する。The operation of this invention will be explained.
ホトレジストを剥離する部材（１）にホトレジストを塗
布し現像する時ＶＣｌ２光で用いｔと同等もしくはそれ
以上の紫外線（ａ）の照射をする工程（ａ） Ｖｃおい
て露光されていないホ“°トレジストを完全Ｋｍ光し、
温〜５０℃程吐で濃度が０．５％程贋の水酸化ナトリウ
ム（Ｎａｈｉｉ？’Ｅスプレーを部材に２分程度当てる
工程１１ｉＫてホトレジストに剥離し、次いで乾燥工程
＋１２’ Ｋてホトレジストの剥離は児了し、ホトレジ
ストのＦ邪ｌ／！：４在する金属膜（ａｌ等にダメージ
全与えずにホトレジスト（ｂ） ｋ剥離することが出来
る。When applying photoresist to the member (1) from which the photoresist is to be removed and developing it, a step of irradiating ultraviolet light (a) with an intensity equal to or greater than t used in VCl2 light (a) Photoresist not exposed at Vc Light up completely Km,
Apply fake sodium hydroxide (Nahii?'E) spray with a concentration of about 0.5% to the member at a temperature of about 50°C for about 2 minutes at 11K to peel off the photoresist, then dry at +12K to remove the photoresist. As a result, the photoresist (b) can be peeled off without causing any damage to the metal film (Al, etc.) present on the photoresist.
ｆｒお、上記実施例では現像の時用いるのと同等の水ｒ
４β化ナトリウム（ＮａＯＨ）のスプレー工程（３）ニ
ついてボしたが、このスプレー工程において、ホトレジ
ストの現像専用液、ホトレジストの剥離に用いる濃度の
水酸化ナトリウム（濃度２〜ｐ係程度）？用いても同様
の効果を得ることが出来る。In the above example, the same amount of water as used during development was used.
I missed the spraying step (3) of sodium 4β (NaOH), but in this spraying step, a special solution for developing the photoresist, sodium hydroxide at a concentration used for stripping the photoresist (concentration of about 2 to p) is used. Similar effects can be obtained by using
以上のように、この発明によねば、溶液の種類が少なく
、かつ液温全高温にしないため、ホトレジスト剥離直後
のホトレジスト下部ＶＣ荘圧する金属膜等にダメージを
与えずにホトレジストを剥離出来、かつ露光と現像の工
程全そのまま便える等の効果がある。As described above, according to the present invention, since the number of types of solutions is small and the solution temperature is not raised to a high temperature, the photoresist can be removed without damaging the metal film, etc. that is under pressure under the VC of the photoresist immediately after the photoresist is removed. It has the advantage that the entire process of exposure and development can be carried out as is.
＠１図は従来のホトレジスト剥離法を示す手順、第２図
はこの発明の一実施例によるホトレジスト剥離法を示す
手順である。
（１）・・・ホトレジストを剥離するための部材、（２
）・・・１００℃以上の高温ＶＣ温度會上げられた専用
剥離液、（３）・・・８０℃前後の温度に上けられたト
リクレン又はＭＥＫ （メチル−エテル−ケトン） 、
！４１・・・８０℃前後の温度に上げらハたトリクレン
又けＭＥＫ 、 ＋５１・・・常温のアセトン、（６：
・・・常温のアセトン、（７）・・・常温の工ＰＡ （
イソグロビルアルコール） 、 ’８１・・常温の工ｐ
Ａ ＋ （９’・・・紫外線照射工程、（ｌＯ）・・・
水酸化ナト１ウムスプレー工程、（１１）・・・乾燥工
程。
なお、図中同一符号に同−又は相当部分ケ示す。
代理人 大 岩 増 雄
第１１図
第２１馨１Figure 1 shows a procedure for a conventional photoresist stripping method, and FIG. 2 shows a procedure for a photoresist stripping method according to an embodiment of the present invention. (1)... Member for peeling off photoresist, (2
)...Special stripping solution raised to a high temperature VC temperature of 100℃ or higher, (3)...Trichlene or MEK (methyl-ether-ketone) heated to a temperature of around 80℃,
! 41: MEK heated to around 80°C, +51: Acetone at room temperature, (6:
... Acetone at room temperature, (7) ... Engineering PA at room temperature (
Isoglobil alcohol), '81... room temperature engineering p
A + (9'... UV irradiation step, (lO)...
Sodium hydroxide spray step, (11)...drying step. In addition, the same reference numerals in the drawings indicate the same or corresponding parts. Agent Masuo Oiwa Figure 11 Figure 21 Kaoru 1
Claims (1)
部材に紫外線を照射し、その後ホトレジスト剥離剤にて
ホトレジストを剥離するホトレジスト剥離法。A photoresist stripping method in which a photoresist layered member is irradiated with ultraviolet rays, and then the photoresist is stripped off using a photoresist stripping agent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP754684A JPS60151639A (en) | 1984-01-18 | 1984-01-18 | Stripping-off method of photoresist |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP754684A JPS60151639A (en) | 1984-01-18 | 1984-01-18 | Stripping-off method of photoresist |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60151639A true JPS60151639A (en) | 1985-08-09 |
Family
ID=11668786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP754684A Pending JPS60151639A (en) | 1984-01-18 | 1984-01-18 | Stripping-off method of photoresist |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60151639A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6184384A (en) * | 1984-09-29 | 1986-04-28 | Futaba Corp | Formation of fine pattern |
| JPS6410248A (en) * | 1987-07-03 | 1989-01-13 | Fuji Xerox Co Ltd | Method for removing resist in chrome photolithoetching |
| JPH03263048A (en) * | 1990-03-14 | 1991-11-22 | Fujitsu Ltd | Method for peeling resist for photomask |
-
1984
- 1984-01-18 JP JP754684A patent/JPS60151639A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6184384A (en) * | 1984-09-29 | 1986-04-28 | Futaba Corp | Formation of fine pattern |
| JPS6224510B2 (en) * | 1984-09-29 | 1987-05-28 | Futaba Denshi Kogyo Kk | |
| JPS6410248A (en) * | 1987-07-03 | 1989-01-13 | Fuji Xerox Co Ltd | Method for removing resist in chrome photolithoetching |
| JPH03263048A (en) * | 1990-03-14 | 1991-11-22 | Fujitsu Ltd | Method for peeling resist for photomask |
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