KR0130386B1 - Patterning method of photoresist - Google Patents

Patterning method of photoresist

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Publication number
KR0130386B1
KR0130386B1 KR1019890012561A KR890012561A KR0130386B1 KR 0130386 B1 KR0130386 B1 KR 0130386B1 KR 1019890012561 A KR1019890012561 A KR 1019890012561A KR 890012561 A KR890012561 A KR 890012561A KR 0130386 B1 KR0130386 B1 KR 0130386B1
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KR
South Korea
Prior art keywords
photoresist
adhesion
remove
solvent
reticle
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KR1019890012561A
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Korean (ko)
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KR910005402A (en
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허훈
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문정환
엘지반도체주식회사
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Priority to KR1019890012561A priority Critical patent/KR0130386B1/en
Publication of KR910005402A publication Critical patent/KR910005402A/en
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Publication of KR0130386B1 publication Critical patent/KR0130386B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Abstract

A method for improving adhesive force between a photoresist and a substrate is disclosed. The method comprises the steps of: coating a photoresist(PR)(3) on an wafer(1) having an oxide layer(2); soft-baking the resultant structure in order to remove a solvent in the PR(3); hard-baking the PR(3) to remove the residue solvent using reticle(4); and exposing the entire surface of the PR(3) by ultraviolet ray without using the reticle(4), thereby preventing an excitation of the photoresist.

Description

포토레지스트 패턴 형성방법Photoresist pattern formation method

제1도는 본 발명의 제조공정도.1 is a manufacturing process diagram of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 웨이퍼기판 2 : 산화막1 wafer substrate 2 oxide film

3 : P/R 4 : 레티클3: P / R 4: Reticle

본 발명은 포토 레지스트(이하에서 p/R이라 함)와 기판과의 부착성(ADHESION)향상을 위한 방법에 관한 것으로 특히 습식 식각 공정에 적당하도록 한 포토레지스트 패턴 형성방법에 관한 것이다.The present invention relates to a method for improving adhesion between photoresist (hereinafter referred to as p / R) and a substrate, and more particularly, to a method of forming a photoresist pattern suitable for a wet etching process.

일반적으로 P/R 부착성 향상을 위한 기술로서 접착제 처리와 P/R의 소프트 베이크(Bake) 및 P/R의 하드 베이크 등을 병행하므로 부착성을 향상시키고 있으며, 여기서, 상기의 접착제(예를 들어 프라이머(PRIMER))는 P/R 도포전에 웨이퍼 기판 위에 형성시켜 기판표면과 P/R간의 표면 결합력을 향상시키도록 하는 물질이다. 또한, P/R내에는 솔벤트(Solvent)가 포함되어 있는데 이는 노광 공정시 윤곽을 저하시킴은 물론 웨이퍼 기판과의 부착성을 저하시킬 수 있어 이를 방지하기 위해 P/R 도포 후와 현상 후에 베이킹을 행하므로써 솔벤트 함량상태를 줄일 수 있고, 이에 따라 기판과의 부착성을 향상시킬 수 있다.In general, as a technology for improving P / R adhesion, adhesive treatment is performed in parallel with soft bake of P / R and hard bake of P / R, thereby improving adhesion. For example, primer (PRIMER) is a material that is formed on the wafer substrate prior to P / R coating to improve the surface bonding between the substrate surface and the P / R. In addition, solvent is contained in P / R, which not only reduces the contour during the exposure process but also reduces the adhesion to the wafer substrate. By doing so, it is possible to reduce the solvent content state, thereby improving the adhesion to the substrate.

그러는 상기의 기술에 있어서는 소프트 베이크와 하드베이크를 실시할 때 P/R 표면에 솔벤트가 증발함에 따라 P/R 표면에는 질소가스가 빠져나가 하스크(Husk)로 존재하고 P/R 내부의 질소 성분을 트램핑시키는데 이러한 현상은 결국 웨이퍼 기판과 P/R과의 부착성을 저하시키는 요인이 되고 있다.In the above technique, when the soft bake and the hard bake are carried out, the solvent evaporates on the P / R surface, so that nitrogen gas escapes on the P / R surface and is present as a Husk and the nitrogen content inside the P / R. This phenomenon eventually causes deterioration in adhesion between the wafer substrate and the P / R.

따라서, 본 발명을 안출하게 된 배경은 다음과 같다.Therefore, the background which came up with this invention is as follows.

즉, 하드 베이크 후 P/R 표면은 물질내의 다이자이드(Diazide)성분이 열 분해 작용에 의해서 질소가스가 방출된다고 알려져 있으며 이러한 질소가스의 방출은 가수투과성이 낮은 하스크(Husk)라는 물질로 P/R 표면을 둘러싸고 잔유하게 만든다. 따라서, P/R 내에는 이러한 하스크에 의해서 질소가 갇혀 있게 되는데 이것이 P/R의 부착성을 저하시킬 수 있으며, 이에 따라, 하스크에 의해 갇혀있는 질소성분을 하스크 밖으로 방출시키기만 하면 P/R의 부착성 저하를 방지할 수 있다.That is, after hard bake, the P / R surface is known to release nitrogen gas due to the thermal decomposition of the diazide component in the material, and the release of nitrogen gas is called a hydrophilic material called Hask. / R Surrounds and makes a residue. Therefore, nitrogen is trapped in the P / R by the hask, which may degrade the adhesion of the P / R. Therefore, if the nitrogen trapped by the hask is released out of the hask, Deterioration in adhesion of / R can be prevented.

이에 대한 방안으로는 일단 하스크가 형성된 P/R을 다시 추가로 전면 노광(Flood explose)을 실시하면 U.V(Ultra Violet : 자외선)광 에너지에 의해 P/R내에 잔유하는 다이자이드 성분이 분해되고, 이에 따라 하스크내에 존재할 수 있는 질소가스 성분을 완전히 추출시킬 수 있어 습식 식각시 P/R의 부착성 저하를 저지시킬 수 있다.As a solution to this, once the P / R on which the Hask is formed is subjected to additional surface exposure, the remaining zed components in the P / R are decomposed by UV (Ultra Violet) light energy. Accordingly, it is possible to completely extract the nitrogen gas components that may be present in the Hask, it is possible to prevent the deterioration of the adhesion of P / R during wet etching.

이하에서 상기한 점을 감안하여 본 발며을 제1도에 따라 설명하면 다음과 같다. 먼저, (가)와 같이 실리콘 웨이퍼 기판(1)에 산화막(2)을 증착하고 (나)와 같이 산화막(2)위에 정상적으로 P/R(3)을 도포하여, 소프트 베이크를 실시하므로 이 P/R(3)내에 존재하는 솔벤트를 제거한다.In consideration of the above points, the present invention will be described with reference to FIG. 1 as follows. First, as shown in (a), the oxide film 2 is deposited on the silicon wafer substrate 1, and as shown in (b), the P / R (3) is normally applied on the oxide film 2 to perform soft baking. Remove any solvent present in R (3).

다음, 특정 패턴 형성을 위해서 (다)와 같이 지정 레티클(RETICLE)(패턴 마스크)(4)를 이용한 노광 및 현상 공정으로 P/R 패턴을 형성하고 (라)와 가팅 하드 베이크를 실시하여 P/R(3) 패턴내에 잔유하는 솔벤트를 한번 더 제거한다. 계속해서, (마)와 같이 전면 노광 단계에서 레티클(4) 사용없이 웨이퍼 표면에 전면 노광을 행하여 하스크에 의해 질소 가스가 포획되어 있는 것을 U.V광에 의해 다이자이드 성분을 분해시킨다.Next, in order to form a specific pattern, a P / R pattern is formed by an exposure and development process using a designated reticle (pattern mask) 4 as shown in (c), followed by (d) and a gating hard bake. Remove the solvent remaining in the R (3) pattern once more. Subsequently, as shown in (e), the entire surface is exposed to the surface of the wafer without using the reticle 4 in the entire surface exposure step, and the diazide component is decomposed by the U.V light to capture nitrogen gas by the Hask.

따라서, P/R 부착성 저하의 원인인 포획된 질소 성분을 제거시켜 이후 공정인 습식식각시 P/R 부착성을 향상시킬 수 있다.Therefore, the trapped nitrogen component which is the cause of P / R adhesion deterioration may be removed, thereby improving P / R adhesion during wet etching.

다시말해서, 상기의 공정에 따르면 기타의 공정방법보다 P/R 부착성 향상을 위한 관점에서 공정이 단순하게 이루어질 수 있고, 특히 습식 식각시 P/R 부착성 향상을 위하여 행하는 하드베이크 온도를 무리하게 상승시키기 때문에 발생되는 P/R의 써멀 플로우잉(THERMAL-Flowing) 문제 등을 방지하면서 부착성을 향상시킬 수 있는 특징을 가진 것이다.In other words, according to the above process, the process can be made simpler from the viewpoint of improving the P / R adhesion than other process methods, and in particular, the hard bake temperature performed to improve the P / R adhesion in wet etching is excessive. P / R thermal flow (THERMAL-Flowing) problems, such as caused by the increase, while having the feature to improve the adhesion.

Claims (1)

기판(1)에 산화막(2)과 P/R(3)을 차례로 증착하고 소프트 베이크를 실시하여 상기 P/R(3)내에 존재하는 솔벤트를 제거하는 공정과, 지정 레티클(4)를 이용한 노광 및 현상으로 P/R 패턴을 형성하고 하드 베이크를 실시하여 P/R내에 잔유하는 솔벤트를 제거하는 공정과, 전면을 노광하여 다이자이드 성분을 분해시키는 공정을 포함하여 이루어짐을 특징으로 하는 포토레지스트 패턴 형성방법.Depositing the oxide film 2 and the P / R 3 on the substrate 1 in turn and performing a soft bake to remove the solvent present in the P / R 3, and exposure using the designated reticle 4. And forming a P / R pattern by developing and hard baking to remove the solvent remaining in the P / R, and exposing the entire surface to decompose the zed component. Formation method.
KR1019890012561A 1989-08-31 1989-08-31 Patterning method of photoresist KR0130386B1 (en)

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KR1019890012561A KR0130386B1 (en) 1989-08-31 1989-08-31 Patterning method of photoresist

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KR1019890012561A KR0130386B1 (en) 1989-08-31 1989-08-31 Patterning method of photoresist

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KR910005402A KR910005402A (en) 1991-03-30
KR0130386B1 true KR0130386B1 (en) 1998-04-06

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