JPS6134655B2 - - Google Patents
Info
- Publication number
- JPS6134655B2 JPS6134655B2 JP54154189A JP15418979A JPS6134655B2 JP S6134655 B2 JPS6134655 B2 JP S6134655B2 JP 54154189 A JP54154189 A JP 54154189A JP 15418979 A JP15418979 A JP 15418979A JP S6134655 B2 JPS6134655 B2 JP S6134655B2
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- resist
- exposed
- sulfone
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Polymerisation Methods In General (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15418979A JPS5677844A (en) | 1979-11-30 | 1979-11-30 | Resist pattern forming method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15418979A JPS5677844A (en) | 1979-11-30 | 1979-11-30 | Resist pattern forming method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5677844A JPS5677844A (en) | 1981-06-26 |
JPS6134655B2 true JPS6134655B2 (en, 2012) | 1986-08-08 |
Family
ID=15578773
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15418979A Granted JPS5677844A (en) | 1979-11-30 | 1979-11-30 | Resist pattern forming method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5677844A (en, 2012) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6081158A (ja) * | 1983-10-11 | 1985-05-09 | Hitachi Ltd | 放射線感応物質 |
JPS60195940A (ja) * | 1984-03-17 | 1985-10-04 | Mitsubishi Electric Corp | 微細パタ−ン形成方法 |
-
1979
- 1979-11-30 JP JP15418979A patent/JPS5677844A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5677844A (en) | 1981-06-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0256031B1 (en) | Method for developing poly(methacrylic anhydride) resists | |
US6753129B2 (en) | Method and apparatus for modification of chemically amplified photoresist by electron beam exposure | |
JP4467857B2 (ja) | 電子線露光による193nm感光性フォトレジスト材料の改変 | |
JPS63146038A (ja) | 感光性組成物 | |
JPS61144639A (ja) | 放射線感応性組成物及びそれを用いたパタ−ン形成法 | |
US4590149A (en) | Method for fine pattern formation on a photoresist | |
US6340556B1 (en) | Tailoring of linewidth through electron beam post exposure | |
JPH06148887A (ja) | 感光性樹脂組成物 | |
US4701342A (en) | Negative resist with oxygen plasma resistance | |
US4454200A (en) | Methods for conducting electron beam lithography | |
JPS6134655B2 (en, 2012) | ||
EP0030107B1 (en) | Process for forming resist pattern | |
JP2667742B2 (ja) | 感光性樹脂組成物 | |
JPS5813900B2 (ja) | エポキシ − ジユウゴウタイコウエネルギ−ビ−ムレジストノ ケイセイホウ | |
JPH05265210A (ja) | レジスト組成物及びそれを用いるパターン形成方法 | |
JPH09134015A (ja) | パタン形成材料,パタン形成方法および半導体素子製造方法 | |
JPH0474434B2 (en, 2012) | ||
JPS6358338B2 (en, 2012) | ||
JPH0150894B2 (en, 2012) | ||
JP4768740B2 (ja) | 新規なレジスト材および基板へのパターン化レジスト層の形成方法 | |
JPH07311467A (ja) | 水溶性組成物、それを用いたパタン形成方法及び半導体装置の製造方法 | |
JPS58122531A (ja) | パタ−ン形成方法 | |
JPS6360376B2 (en, 2012) | ||
JPS5912433A (ja) | ドライ現像ポジ型レジスト組成物 | |
JPS62226147A (ja) | ポジ型レジスト材料 |