JPS6134276B2 - - Google Patents

Info

Publication number
JPS6134276B2
JPS6134276B2 JP16374680A JP16374680A JPS6134276B2 JP S6134276 B2 JPS6134276 B2 JP S6134276B2 JP 16374680 A JP16374680 A JP 16374680A JP 16374680 A JP16374680 A JP 16374680A JP S6134276 B2 JPS6134276 B2 JP S6134276B2
Authority
JP
Japan
Prior art keywords
gan
layer
doped layer
emitting device
blue light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP16374680A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5787184A (en
Inventor
Kazuo Tabuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP16374680A priority Critical patent/JPS5787184A/ja
Publication of JPS5787184A publication Critical patent/JPS5787184A/ja
Publication of JPS6134276B2 publication Critical patent/JPS6134276B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials

Landscapes

  • Led Devices (AREA)
JP16374680A 1980-11-19 1980-11-19 Gan blue light emitting element Granted JPS5787184A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16374680A JPS5787184A (en) 1980-11-19 1980-11-19 Gan blue light emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16374680A JPS5787184A (en) 1980-11-19 1980-11-19 Gan blue light emitting element

Publications (2)

Publication Number Publication Date
JPS5787184A JPS5787184A (en) 1982-05-31
JPS6134276B2 true JPS6134276B2 (en, 2012) 1986-08-06

Family

ID=15779890

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16374680A Granted JPS5787184A (en) 1980-11-19 1980-11-19 Gan blue light emitting element

Country Status (1)

Country Link
JP (1) JPS5787184A (en, 2012)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6362017B1 (en) 1990-02-28 2002-03-26 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound
CA2037198C (en) 1990-02-28 1996-04-23 Katsuhide Manabe Light-emitting semiconductor device using gallium nitride group compound
US5278433A (en) * 1990-02-28 1994-01-11 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
EP0579897B1 (en) * 1992-07-23 2003-10-15 Toyoda Gosei Co., Ltd. Light-emitting device of gallium nitride compound semiconductor
EP1197634B1 (en) 1999-06-18 2008-03-19 Nidec Sankyo Corporation Rotary cylinder device
KR20030001566A (ko) * 2001-06-25 2003-01-08 대한민국 (한밭대학총장) 질화갈륨 분말 제조장치와 그 제조방법 및 그를 이용한전기발광소자

Also Published As

Publication number Publication date
JPS5787184A (en) 1982-05-31

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