JPS6134276B2 - - Google Patents
Info
- Publication number
- JPS6134276B2 JPS6134276B2 JP16374680A JP16374680A JPS6134276B2 JP S6134276 B2 JPS6134276 B2 JP S6134276B2 JP 16374680 A JP16374680 A JP 16374680A JP 16374680 A JP16374680 A JP 16374680A JP S6134276 B2 JPS6134276 B2 JP S6134276B2
- Authority
- JP
- Japan
- Prior art keywords
- gan
- layer
- doped layer
- emitting device
- blue light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 7
- MUJOIMFVNIBMKC-UHFFFAOYSA-N fludioxonil Chemical compound C=12OC(F)(F)OC2=CC=CC=1C1=CNC=C1C#N MUJOIMFVNIBMKC-UHFFFAOYSA-N 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 41
- 229910002601 GaN Inorganic materials 0.000 description 40
- 239000011701 zinc Substances 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
【発明の詳細な説明】
本発明はGaN（窒化ガリウム）青色発光素子に
関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a GaN (gallium nitride) blue light emitting device.
GaNは室温で3.5eVと広いバンドギヤツプを有
する直接遷移型の−族化合物半導体であるた
め青色発光ダイオードとして有望視されている。 GaN is a direct transition type - group compound semiconductor with a wide bandgap of 3.5 eV at room temperature, and is therefore considered to be promising as a blue light-emitting diode.
Si（シリコン）単結晶製造に用いるチヨクラル
スキ法やフローテイングゾーン法等ではGaNの大
型の単結晶を得ることは非常に困難であり、従つ
てGaNの大型の単結晶を得るためにはGaCl−
NH3系反応つまりGaCl（塩化ガリウム）とNH3
（アンモニア）との直接反応を用いた気相成長方
法が広く採用されている。 It is very difficult to obtain large single crystals of GaN using the Czyochralski method, floating zone method, etc. used to produce Si (silicon) single crystals.
NH3 -based reaction, that is, GaCl (gallium chloride) and NH3
A vapor phase growth method using a direct reaction with (ammonia) is widely used.
また上記気相成長に用いる基板にはGaNの結晶
構造、格子定数及び結晶成長時の温度変化に対す
る基板の安定度等の観点から一主面が（0001）Ｃ
面であるサフアイヤ（Al2O3）単結晶基板が一般
に使用されている。 In addition, the substrate used for the above vapor phase growth has one principal surface with (0001) C
A single-crystal sapphire (Al 2 O 3 ) substrate is commonly used.
第１図は従来のGaN青色発光素子を示し、１は
一主面２が（0001）Ｃ面であるサフアイヤ単結晶
基板、３は該基板１の一主面２上にエピタキシヤ
ル成長させたGaN層である。 FIG. 1 shows a conventional GaN blue light-emitting device, in which 1 is a sapphire single crystal substrate whose one principal surface 2 is the (0001) C plane, and 3 is a GaN substrate epitaxially grown on one principal surface 2 of the substrate 1. It is a layer.
該GaN層３は960℃〜1000℃に保持された上記
基板１の一主面２上にGaCl（塩化ガリウム）−
NH3（アンモニア）系反応により成長させたもの
である。 The GaN layer 3 is formed by depositing GaCl (gallium chloride) on one main surface 2 of the substrate 1 maintained at 960°C to 1000°C.
It is grown by NH 3 (ammonia) based reaction.
４は上記GaN層３表面にZn（亜鉛）をドープ
してなる絶縁性のZnドープ層、５は該Znドープ
層４表面に金等を蒸着してなる金属層であり、上
記GaN層３、Znドープ層４、金属層５の３層に
より青色発光をなすMIS型接合が形成される。 4 is an insulating Zn-doped layer formed by doping Zn (zinc) on the surface of the GaN layer 3; 5 is a metal layer formed by vapor-depositing gold or the like on the surface of the Zn-doped layer 4; The three layers of the Zn-doped layer 4 and the metal layer 5 form an MIS type junction that emits blue light.
上記素子はZnドープ層４形成後室温まで徐冷
されるが、このとき上記基板１とGaN層３との熱
膨張係数が異なるため第１図に示す如くGaN層３
内にクラツク６が生じる。 After forming the Zn-doped layer 4, the device is slowly cooled to room temperature. At this time, the GaN layer 3
A crack 6 occurs within the frame.
上記クラツク６はGaNの成長層表面つまりZn
ドープ層４表面に達しない限り問題はない。しか
し、クラツク６がZnドープ層４表面に到達する
と、上記MIS型接合に順方向バイアスを印加した
ときクラツク６にリーク電流が発生し、発光素子
としての発光及び電気的特性が低下する。 The crack 6 above is the surface of the GaN growth layer, that is, Zn.
There is no problem as long as it does not reach the surface of the doped layer 4. However, when the crack 6 reaches the surface of the Zn-doped layer 4, a leakage current is generated in the crack 6 when a forward bias is applied to the MIS type junction, and the light emission and electrical characteristics of the light emitting device are deteriorated.
上記クラツク６がZnドープ層４表面に達しな
いためにはGaNを30μｍ厚以上成長させればよい
ことが知られている。しかしGaNの成長に気相成
長法を採用しているため成長時間がかかり過ぎる
欠点がある。一例をあげると第１図に示したGaN
層３は約15〜20μｍ程度でその成長時間は約２時
間である。従つてGaN層３を30μｍ以上成長させ
るには少なくとも３時間はかかるため生産性が低
下する。 It is known that in order to prevent the cracks 6 from reaching the surface of the Zn-doped layer 4, it is sufficient to grow GaN to a thickness of 30 μm or more. However, since the vapor phase growth method is used to grow GaN, there is a drawback that the growth time is too long. For example, the GaN shown in Figure 1
Layer 3 has a thickness of about 15 to 20 μm and the growth time is about 2 hours. Therefore, it takes at least 3 hours to grow the GaN layer 3 to a thickness of 30 μm or more, which reduces productivity.
本発明は上記の点に鑑みてなされたものであ
る。 The present invention has been made in view of the above points.
第２図は本発明によるGaN青色発光素子の一実
施例を示し、１１は一主面１２が（0001）Ｃ面で
あるサフアイヤ単結晶基板、１３は上記主面１２
上にGaCl−NH3系反応により気相成長させた第
1GaN層であり、15μｍ厚以上とするのが望まし
い。１４は該第1GaN層１３表面に例えばZnのよ
うなGaNに対してアクセプタとなる不純物をドー
プした不純物ドープ層であり、該ドープ層１４は
5000Å厚程度である。尚、不純物ドープ層１４の
層厚は第1GaN層１３の層厚が15μｍ以下となる
とき5000Å以上必要となる。１５は上記不純物ド
ープ層１４表面に上記第1GaN層１３と同様にし
て形成された約５μｍ厚の第2GaN層、１６は該
第2GaN層１５表面にZnを約2000Åの深さにドー
プしてなる絶縁性のZnドープ層、１７は該Znド
ープ層１６表面に金等を蒸着させた金属層であ
る。 FIG. 2 shows an embodiment of the GaN blue light emitting device according to the present invention, where 11 is a sapphire single crystal substrate whose main surface 12 is (0001) C plane, and 13 is the main surface 12.
On top of the
It is preferably a 1GaN layer with a thickness of 15 μm or more. 14 is an impurity doped layer in which the surface of the first GaN layer 13 is doped with an impurity, such as Zn, which becomes an acceptor for GaN;
The thickness is approximately 5000 Å. The thickness of the impurity-doped layer 14 is required to be 5000 Å or more when the thickness of the first GaN layer 13 is 15 μm or less. Reference numeral 15 indicates a second GaN layer having a thickness of approximately 5 μm, which is formed on the surface of the impurity doped layer 14 in the same manner as the first GaN layer 13, and reference numeral 16 is a second GaN layer formed by doping the surface of the second GaN layer 15 with Zn to a depth of approximately 2000 Å. The insulating Zn-doped layer 17 is a metal layer in which gold or the like is deposited on the surface of the Zn-doped layer 16.
上記GaN青色発光素子において不純物ドープ層
１４の存在が本発明の特徴であり、不純物ドープ
層１４により第2GaN層１５にクラツク１８が到
達しない。 The presence of the impurity doped layer 14 in the GaN blue light emitting device is a feature of the present invention, and the impurity doped layer 14 prevents the cracks 18 from reaching the second GaN layer 15.
この理由は、960℃〜1000℃の高温中で形成さ
れた第1GaN層１３では成長中にＮが抜けるため
原子間の結合力が弱まり、反面不純物をドープさ
れた不純物ドープ層１４では不純物がＮ位置に入
り込み結合力が強くなり、クラツクを発生させる
内部応力に対しても不純物ドープ層１４の方が強
固であるため、第1GaN層１３で弱められた内部
応力が不純物ドープ層１４において略消滅するた
めだと考察される。 The reason for this is that in the first GaN layer 13 formed at a high temperature of 960°C to 1000°C, the bonding force between atoms weakens as N escapes during growth.On the other hand, in the impurity-doped layer 14 doped with impurities, the impurity is Since the impurity-doped layer 14 is stronger against the internal stress that penetrates into the position and becomes stronger and causes cracks, the internal stress weakened by the first GaN layer 13 almost disappears in the impurity-doped layer 14. It is considered that this is for the sake of this.
従つて本実施例におけるGaN青色発光素子では
第2GaN層１５、Znドープ層１６、金属層１７の
３層からなるMIS型接合部内には全くクラツク１
８が発生しないため発光素子として完全なものと
なる。 Therefore, in the GaN blue light emitting device of this example, there is no crack 1 in the MIS type junction consisting of the three layers, the second GaN layer 15, the Zn doped layer 16, and the metal layer 17.
Since 8 is not generated, the light emitting element becomes perfect.
またGaNの成長層の厚さも第１図に示した従来
のGaN青色発光素子のGaNの成長層の厚さと略同
程度の20μｍとなるので生産性の低下という問題
もない。 Further, the thickness of the GaN growth layer is 20 μm, which is approximately the same as the thickness of the GaN growth layer of the conventional GaN blue light emitting device shown in FIG. 1, so there is no problem of reduced productivity.
第３図は本発明における他の実施例を示し、２
１は一主面が（0001）Ｃ面であるサフアイヤ単結
晶基板、２２は該基板２１の一主面上にGaNを成
長させると共にZnの不純物をドープしてなる不
純物ドープ層、２３は該不純物ドープ層２２表面
にGaNを成長させたGaN層、２４は該GaN層２３
表面にZnをドープしたZnドープ層、２５は該ド
ープ層２４表面に金を蒸着した金属層である。 FIG. 3 shows another embodiment of the present invention, 2
Reference numeral 1 denotes an impurity doped layer formed by growing GaN on one principal surface of the substrate 21 and doping it with Zn impurities; 23 indicates the impurity; A GaN layer in which GaN is grown on the surface of the doped layer 22, 24 is the GaN layer 23
A Zn-doped layer 25 whose surface is doped with Zn is a metal layer in which gold is vapor-deposited on the surface of the doped layer 24.
上記第３図に示した発光素子では不純物ドープ
層２２を適当な厚さにすることによりクラツク２
６に対して第２図に示した発光素子の第1GaN層
１３及び不純物ドープ層１４と同様の効果を得る
ことができる。 In the light emitting device shown in FIG.
6, the same effect as the first GaN layer 13 and impurity doped layer 14 of the light emitting device shown in FIG. 2 can be obtained.
以上の説明から明らかな如く本発明によれば生
産性が低下することなく発光素子として完全な
GaN青色発光素子を得ることができる。 As is clear from the above explanation, according to the present invention, it can be used as a perfect light emitting device without reducing productivity.
A GaN blue light emitting device can be obtained.
第１図は従来のGaN青色発光素子を示す断面
図、第２図は本発明によるGaN青色発光素子の一
実施例を示す断面図、第３図は本発明によるGaN
青色発光素子の他の実施例を示す断面図である。
１１，２１……サフアイヤ単結晶基板、１３，
１５，２３……GaN層、１４，２２……不純物ド
ープ層、１６，２４……Znドープ層。
FIG. 1 is a cross-sectional view showing a conventional GaN blue light-emitting device, FIG. 2 is a cross-sectional view showing an embodiment of a GaN blue light-emitting device according to the present invention, and FIG. 3 is a cross-sectional view showing a GaN blue light-emitting device according to the present invention.
FIG. 7 is a cross-sectional view showing another example of a blue light emitting element. 11, 21...Saphire single crystal substrate, 13,
15, 23... GaN layer, 14, 22... impurity doped layer, 16, 24... Zn doped layer.
Claims (1)
プ層をエピタキシヤル成長により順次積層させた
GaN青色発光素子において、上記GaN層内に上記
Znドープ層と隣接しないように不純物ドープ層
を設けたことを特徴とするGaN青色発光素子。1 A GaN layer and a Zn-doped layer were sequentially stacked on a Saphire single crystal substrate by epitaxial growth.
In the GaN blue light emitting device, the above-mentioned
A GaN blue light emitting device characterized in that an impurity doped layer is provided so as not to be adjacent to a Zn doped layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16374680A JPS5787184A (en) | 1980-11-19 | 1980-11-19 | Gan blue light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16374680A JPS5787184A (en) | 1980-11-19 | 1980-11-19 | Gan blue light emitting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5787184A JPS5787184A (en) | 1982-05-31 |
| JPS6134276B2 true JPS6134276B2 (en) | 1986-08-06 |
Family
ID=15779890
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16374680A Granted JPS5787184A (en) | 1980-11-19 | 1980-11-19 | Gan blue light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5787184A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE69126152T2 (en) | 1990-02-28 | 1997-11-13 | Toyoda Gosei Kk | Gallium nitride compound semiconductor light emitting device |
| US6830992B1 (en) | 1990-02-28 | 2004-12-14 | Toyoda Gosei Co., Ltd. | Method for manufacturing a gallium nitride group compound semiconductor |
| US6362017B1 (en) | 1990-02-28 | 2002-03-26 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound |
| US5278433A (en) * | 1990-02-28 | 1994-01-11 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using gallium nitride group compound with double layer structures for the n-layer and/or the i-layer |
| DE69333250T2 (en) * | 1992-07-23 | 2004-09-16 | Toyoda Gosei Co., Ltd. | Light emitting device made of a compound of the gallium nitride group |
| DE60038381D1 (en) | 1999-06-18 | 2008-04-30 | Nidec Sankyo Corp | ROTATION PISTON DEVICE |
| KR20030001566A (en) * | 2001-06-25 | 2003-01-08 | 대한민국 (한밭대학총장) | ELD using GaN powder and manufacturing method of GaN powder and its equipment |
-
1980
- 1980-11-19 JP JP16374680A patent/JPS5787184A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5787184A (en) | 1982-05-31 |
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