JPS6134265B2 - - Google Patents

Info

Publication number
JPS6134265B2
JPS6134265B2 JP51016033A JP1603376A JPS6134265B2 JP S6134265 B2 JPS6134265 B2 JP S6134265B2 JP 51016033 A JP51016033 A JP 51016033A JP 1603376 A JP1603376 A JP 1603376A JP S6134265 B2 JPS6134265 B2 JP S6134265B2
Authority
JP
Japan
Prior art keywords
region
semiconductor substrate
field effect
effect transistor
electrode provided
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51016033A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5299788A (en
Inventor
Takeaki Okabe
Isao Yoshida
Shikayuki Ochi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1603376A priority Critical patent/JPS5299788A/ja
Publication of JPS5299788A publication Critical patent/JPS5299788A/ja
Publication of JPS6134265B2 publication Critical patent/JPS6134265B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/64Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66Vertical DMOS [VDMOS] FETs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/64Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66Vertical DMOS [VDMOS] FETs
    • H10D30/662Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149Source or drain regions of field-effect devices
    • H10D62/151Source or drain regions of field-effect devices of IGFETs 
JP1603376A 1976-02-18 1976-02-18 Semiconductor device Granted JPS5299788A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1603376A JPS5299788A (en) 1976-02-18 1976-02-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1603376A JPS5299788A (en) 1976-02-18 1976-02-18 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5299788A JPS5299788A (en) 1977-08-22
JPS6134265B2 true JPS6134265B2 (enrdf_load_stackoverflow) 1986-08-06

Family

ID=11905249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1603376A Granted JPS5299788A (en) 1976-02-18 1976-02-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5299788A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS5299788A (en) 1977-08-22

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