JPS6133272B2 - - Google Patents

Info

Publication number
JPS6133272B2
JPS6133272B2 JP15867278A JP15867278A JPS6133272B2 JP S6133272 B2 JPS6133272 B2 JP S6133272B2 JP 15867278 A JP15867278 A JP 15867278A JP 15867278 A JP15867278 A JP 15867278A JP S6133272 B2 JPS6133272 B2 JP S6133272B2
Authority
JP
Japan
Prior art keywords
type semiconductor
semiconductor layer
light
electrode
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15867278A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5586174A (en
Inventor
Shigeo Matsushita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP15867278A priority Critical patent/JPS5586174A/ja
Publication of JPS5586174A publication Critical patent/JPS5586174A/ja
Publication of JPS6133272B2 publication Critical patent/JPS6133272B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
JP15867278A 1978-12-25 1978-12-25 Semiconductor light transmitting and receiving device Granted JPS5586174A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15867278A JPS5586174A (en) 1978-12-25 1978-12-25 Semiconductor light transmitting and receiving device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15867278A JPS5586174A (en) 1978-12-25 1978-12-25 Semiconductor light transmitting and receiving device

Publications (2)

Publication Number Publication Date
JPS5586174A JPS5586174A (en) 1980-06-28
JPS6133272B2 true JPS6133272B2 (enrdf_load_stackoverflow) 1986-08-01

Family

ID=15676833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15867278A Granted JPS5586174A (en) 1978-12-25 1978-12-25 Semiconductor light transmitting and receiving device

Country Status (1)

Country Link
JP (1) JPS5586174A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0288267B1 (en) * 1987-04-21 1993-10-06 Nec Corporation An optical semiconductor device
JP4217414B2 (ja) * 2002-03-01 2009-02-04 株式会社東芝 光半導体センサ

Also Published As

Publication number Publication date
JPS5586174A (en) 1980-06-28

Similar Documents

Publication Publication Date Title
US5793060A (en) SOI Optical semiconductor device
US6635908B2 (en) Burying type avalanche photodiode and fabrication method thereof
JPS5826187B2 (ja) コタイハツコウ − ジユコウソシ
US4614958A (en) Light emitting and receiving device
KR102747138B1 (ko) 범용의 광대역 광 검출기 설계 및 제작 프로세스
JPH04111478A (ja) 受光素子
JPS5984589A (ja) アバランシフオトダイオード
JPS5848481A (ja) モニタ−用光検出器内蔵面発光型発光ダイオ−ド
JPS6133272B2 (enrdf_load_stackoverflow)
US6008506A (en) SOI optical semiconductor device
JPS6133273B2 (enrdf_load_stackoverflow)
JP2002344002A (ja) 受光素子及び受光素子実装体
JPS6086879A (ja) 半導体発光素子の製造方法
JP2733933B2 (ja) 半導体受発光装置
JP2638445B2 (ja) 半導体受光素子
JPS60130873A (ja) 発光半導体装置
JPS6138872B2 (enrdf_load_stackoverflow)
JPS62268169A (ja) 赤外発光ダイオ−ド
JPS62199072A (ja) 発光受光半導体素子
JP3286034B2 (ja) 半導体受光素子
JP2006269978A (ja) フォトダイオード
JPH0582827A (ja) 半導体受光素子
JPH0479274A (ja) 発光素子
JPS60163470A (ja) 半導体受光素子
JPS6110285A (ja) 半導体発光ダイオ−ドの製造方法