JPS6133253B2 - - Google Patents
Info
- Publication number
- JPS6133253B2 JPS6133253B2 JP6359678A JP6359678A JPS6133253B2 JP S6133253 B2 JPS6133253 B2 JP S6133253B2 JP 6359678 A JP6359678 A JP 6359678A JP 6359678 A JP6359678 A JP 6359678A JP S6133253 B2 JPS6133253 B2 JP S6133253B2
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline silicon
- film
- silicon film
- diffused
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 25
- 239000012535 impurity Substances 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 24
- 229910052782 aluminium Inorganic materials 0.000 description 24
- 238000009792 diffusion process Methods 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- 229910052698 phosphorus Inorganic materials 0.000 description 10
- 239000011574 phosphorus Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6359678A JPS54154272A (en) | 1978-05-26 | 1978-05-26 | Contact forming method for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6359678A JPS54154272A (en) | 1978-05-26 | 1978-05-26 | Contact forming method for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54154272A JPS54154272A (en) | 1979-12-05 |
| JPS6133253B2 true JPS6133253B2 (de) | 1986-08-01 |
Family
ID=13233800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6359678A Granted JPS54154272A (en) | 1978-05-26 | 1978-05-26 | Contact forming method for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54154272A (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57106067A (en) * | 1980-12-23 | 1982-07-01 | Toshiba Corp | Manufacture of semiconductor device |
| JPS5780767A (en) * | 1980-11-07 | 1982-05-20 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
| JPS5788724A (en) * | 1980-11-21 | 1982-06-02 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS5852872A (ja) * | 1981-09-24 | 1983-03-29 | Nec Corp | 半導体集積回路装置 |
| JPH0630350B2 (ja) * | 1983-01-24 | 1994-04-20 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| JPS6089921A (ja) * | 1983-10-24 | 1985-05-20 | Rohm Co Ltd | 半導体装置の製造方法 |
| JPH07105361B2 (ja) * | 1985-12-12 | 1995-11-13 | 富士通株式会社 | 半導体装置の製造方法 |
| JPS62268130A (ja) * | 1986-05-15 | 1987-11-20 | Toshiba Corp | 半導体装置の製造方法 |
| JPS63112357A (ja) * | 1986-10-25 | 1988-05-17 | Akitomo Yano | ピンチロ−ル |
-
1978
- 1978-05-26 JP JP6359678A patent/JPS54154272A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54154272A (en) | 1979-12-05 |
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