JPS6132809B2 - - Google Patents

Info

Publication number
JPS6132809B2
JPS6132809B2 JP59183892A JP18389284A JPS6132809B2 JP S6132809 B2 JPS6132809 B2 JP S6132809B2 JP 59183892 A JP59183892 A JP 59183892A JP 18389284 A JP18389284 A JP 18389284A JP S6132809 B2 JPS6132809 B2 JP S6132809B2
Authority
JP
Japan
Prior art keywords
mask
diffusion layer
source
drain diffusion
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59183892A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6074435A (ja
Inventor
Mitsuharu Kodaira
Keiko Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suwa Seikosha KK
Original Assignee
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suwa Seikosha KK filed Critical Suwa Seikosha KK
Priority to JP59183892A priority Critical patent/JPS6074435A/ja
Publication of JPS6074435A publication Critical patent/JPS6074435A/ja
Publication of JPS6132809B2 publication Critical patent/JPS6132809B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP59183892A 1984-09-03 1984-09-03 Ｍｏｓ型電界効果トランジスタの製造方法 Granted JPS6074435A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59183892A JPS6074435A (ja) 1984-09-03 1984-09-03 Ｍｏｓ型電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59183892A JPS6074435A (ja) 1984-09-03 1984-09-03 Ｍｏｓ型電界効果トランジスタの製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP50154219A Division JPS5854496B2 (ja) 1975-12-24 1975-12-24 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP62078250A Division JPS62271429A (ja) 1987-03-31 1987-03-31 Ｍｏｓ型電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS6074435A JPS6074435A (ja) 1985-04-26
JPS6132809B2 true JPS6132809B2 (US06653308-20031125-C00199.png) 1986-07-29

Family

ID=16143636

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59183892A Granted JPS6074435A (ja) 1984-09-03 1984-09-03 Ｍｏｓ型電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS6074435A (US06653308-20031125-C00199.png)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63180710U (US06653308-20031125-C00199.png) * 1987-05-14 1988-11-22
JPS6449713U (US06653308-20031125-C00199.png) * 1987-09-24 1989-03-28
JPH0425012U (US06653308-20031125-C00199.png) * 1990-06-26 1992-02-28
JPH0443616Y2 (US06653308-20031125-C00199.png) * 1986-12-30 1992-10-15
JPH0615293B2 (ja) * 1986-04-16 1994-03-02 ドネリ− コ−ポレイシヨン パネル組立体を支持体に固着するファスナ
JPH06173918A (ja) * 1992-01-16 1994-06-21 Nifco Inc クリップ

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6260223A (ja) * 1985-09-09 1987-03-16 Seiko Epson Corp 半導体装置
WO1999056308A1 (fr) * 1998-04-28 1999-11-04 Nikon Corporation Systeme d'exposition et procede de production d'un microdispositif

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0615293B2 (ja) * 1986-04-16 1994-03-02 ドネリ− コ−ポレイシヨン パネル組立体を支持体に固着するファスナ
JPH0443616Y2 (US06653308-20031125-C00199.png) * 1986-12-30 1992-10-15
JPS63180710U (US06653308-20031125-C00199.png) * 1987-05-14 1988-11-22
JPS6449713U (US06653308-20031125-C00199.png) * 1987-09-24 1989-03-28
JPH0425012U (US06653308-20031125-C00199.png) * 1990-06-26 1992-02-28
JPH06173918A (ja) * 1992-01-16 1994-06-21 Nifco Inc クリップ

Also Published As

Publication number Publication date
JPS6074435A (ja) 1985-04-26

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