JPS6131589B2 - - Google Patents
Info
- Publication number
- JPS6131589B2 JPS6131589B2 JP55014763A JP1476380A JPS6131589B2 JP S6131589 B2 JPS6131589 B2 JP S6131589B2 JP 55014763 A JP55014763 A JP 55014763A JP 1476380 A JP1476380 A JP 1476380A JP S6131589 B2 JPS6131589 B2 JP S6131589B2
- Authority
- JP
- Japan
- Prior art keywords
- anode
- container
- ray tube
- copper
- copper material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 33
- 229910052802 copper Inorganic materials 0.000 claims description 33
- 239000010949 copper Substances 0.000 claims description 33
- 239000013078 crystal Substances 0.000 claims description 21
- 238000005266 casting Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 7
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 238000007493 shaping process Methods 0.000 claims 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 12
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 238000002425 crystallisation Methods 0.000 description 8
- 230000008025 crystallization Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 238000007711 solidification Methods 0.000 description 6
- 230000008023 solidification Effects 0.000 description 6
- 230000008646 thermal stress Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000010583 slow cooling Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 239000010405 anode material Substances 0.000 description 3
- 229910002114 biscuit porcelain Inorganic materials 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 238000004781 supercooling Methods 0.000 description 2
- 238000005162 X-ray Laue diffraction Methods 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
- H01J35/08—Anodes; Anti cathodes
- H01J35/12—Cooling non-rotary anodes
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1476380A JPS56112056A (en) | 1980-02-12 | 1980-02-12 | X-ray tube anode and its manufacture |
| US06/233,432 US4400824A (en) | 1980-02-12 | 1981-02-11 | X-Ray tube with single crystalline copper target member |
| EP81100997A EP0034768B1 (en) | 1980-02-12 | 1981-02-12 | Method for manufacturing an anode of an x-ray tube |
| DE8181100997T DE3167133D1 (en) | 1980-02-12 | 1981-02-12 | Method for manufacturing an anode of an x-ray tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1476380A JPS56112056A (en) | 1980-02-12 | 1980-02-12 | X-ray tube anode and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56112056A JPS56112056A (en) | 1981-09-04 |
| JPS6131589B2 true JPS6131589B2 (enrdf_load_html_response) | 1986-07-21 |
Family
ID=11870107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1476380A Granted JPS56112056A (en) | 1980-02-12 | 1980-02-12 | X-ray tube anode and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56112056A (enrdf_load_html_response) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110303141A (zh) * | 2019-07-10 | 2019-10-08 | 株洲未铼新材料科技有限公司 | 一种x射线管用单晶铜固定阳极靶材及其制备方法 |
-
1980
- 1980-02-12 JP JP1476380A patent/JPS56112056A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56112056A (en) | 1981-09-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4400824A (en) | X-Ray tube with single crystalline copper target member | |
| CN87108014A (zh) | 定型单晶的生长方法 | |
| CN113574213B (zh) | 单晶制造装置 | |
| EP2149627B1 (en) | Quartz glass crucible for silicon single crystal pulling operation and process for manufacturing the same | |
| WO2011062092A1 (ja) | 単結晶引き上げ装置 | |
| CN116377567A (zh) | 一种碳化硅单晶的生长装置及生长方法 | |
| JP5007126B2 (ja) | 多結晶シリコンインゴットの製造方法 | |
| CN1863945A (zh) | 制备碳化硅单晶的方法 | |
| JPH09227276A (ja) | 単結晶引き上げ方法及び単結晶引き上げ装置 | |
| JP4548682B2 (ja) | 石英ガラスるつぼの製造方法 | |
| JPS6131589B2 (enrdf_load_html_response) | ||
| JPH107491A (ja) | 高純度銅単結晶及びその製造方法並びにその製造装置 | |
| JP2015140291A (ja) | サファイア単結晶育成用坩堝およびこの坩堝を用いたサファイア単結晶の製造方法 | |
| JP2008222481A (ja) | 化合物半導体の製造方法及び装置 | |
| SU1132606A1 (ru) | Устройство дл выращивани монокристаллов тугоплавких материалов | |
| JP2010265150A (ja) | サファイア単結晶の製造方法及び種結晶の製造方法 | |
| KR100835293B1 (ko) | 실리콘 단결정 잉곳의 제조방법 | |
| LV15148B (lv) | Metode un aparāts silīcija tīrīšanai vakuumā | |
| JPS6138160B2 (enrdf_load_html_response) | ||
| JPH05148098A (ja) | Ｆｅ−Ｓｉ−Ａｌ系合金単結晶の育成法 | |
| KR20010017991A (ko) | 개선된 단결정성장로 | |
| JP3664103B2 (ja) | 単結晶成長方法 | |
| JP2012101972A (ja) | 結晶半導体の製造方法及び製造装置 | |
| JP2018177552A (ja) | 単結晶育成用坩堝 | |
| JPH06340493A (ja) | 単結晶育成装置および育成方法 |