JPS6131330Y2 - - Google Patents
Info
- Publication number
- JPS6131330Y2 JPS6131330Y2 JP1979105524U JP10552479U JPS6131330Y2 JP S6131330 Y2 JPS6131330 Y2 JP S6131330Y2 JP 1979105524 U JP1979105524 U JP 1979105524U JP 10552479 U JP10552479 U JP 10552479U JP S6131330 Y2 JPS6131330 Y2 JP S6131330Y2
- Authority
- JP
- Japan
- Prior art keywords
- reticle
- pattern
- glass substrate
- semiconductor substrate
- predetermined pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 22
- 239000011521 glass Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Description
【考案の詳細な説明】 本考案はレチクルの構造に関する。[Detailed explanation of the idea] The present invention relates to the structure of a reticle.
半導体基板表面に所望のパターンを形成するに
際して、近年開発された直接ウエハ焼付け装置
(DSW)を用いてレチクルから半導体基板上に直
接所定のパターンを焼付ける場合がある。 When forming a desired pattern on the surface of a semiconductor substrate, a recently developed direct wafer printing apparatus (DSW) may be used to print a predetermined pattern directly onto the semiconductor substrate from a reticle.
その方法は第1図に示すようにDSW1の支持
台2上に1素子分のパターンを有するレチクル3
を置き、ステージ4上にホトレジスト膜が形成さ
れた半導体基板5を載置し、レチクル3のパター
ンをレンズ系6により1/10に縮小して半導体基板
5表面のホトレジスト膜に焼付け、次いでステー
ジ4を1素子分だけ移動させて再び焼付けを行な
い、これを順次繰り返して半導体基板5表面の全
面に所定のパターンを形成する。 As shown in Fig. 1, the method is as shown in Fig.
The semiconductor substrate 5 on which a photoresist film has been formed is placed on the stage 4, and the pattern of the reticle 3 is reduced to 1/10 by the lens system 6 and printed on the photoresist film on the surface of the semiconductor substrate 5. is moved by one element and baked again, and this process is sequentially repeated to form a predetermined pattern on the entire surface of the semiconductor substrate 5.
所が半導体基板上にレチクルから直接パターン
を形成する場合と、上記レチクルから作成したホ
トマスクを用いて露光する場合とでは半導体基板
上のパターンの左右が反対になる。そのため一連
の半導体素子製造工程においてホトマスクとレチ
クルとを併用するにはパターンの左右を反転させ
たレチクルを作成せねばならず、非常に煩雑であ
る。 However, when forming a pattern directly on a semiconductor substrate from a reticle and when exposing using a photomask made from the reticle, the left and right sides of the pattern on the semiconductor substrate are reversed. Therefore, in order to use a photomask and a reticle together in a series of semiconductor device manufacturing processes, it is necessary to create a reticle with the pattern reversed left and right, which is very complicated.
そこでパターンを反転させたレチクルを作成す
る代りにレチクルを裏返して用いれば半導体基板
上のパターンはホトマスクを用いて形成した場合
と同一になることができる。 Therefore, instead of creating a reticle with an inverted pattern, if the reticle is used upside down, the pattern on the semiconductor substrate can be the same as when it is formed using a photomask.
しかしその反面第2図に示すごとく、支持台2
上にレチクル3を通常の向きに載置した場合(第
2図a)と、レチクル3を裏返して置いた場合
(同図b)とではパターン7の上下方向の位置が
ガラス基板の厚さだけ移動するので、その都度ス
テージの高さを調節する等の方法で焦点調節をし
なければならないが、この操作は極度の精密さを
要求され、容易ではない。 However, on the other hand, as shown in Figure 2, the support stand 2
When the reticle 3 is placed on top in the normal orientation (Figure 2a) and when the reticle 3 is placed upside down (Figure 2b), the vertical position of the pattern 7 is equal to the thickness of the glass substrate. Since it moves, the focus must be adjusted by adjusting the height of the stage each time, but this operation requires extreme precision and is not easy.
本考案の目的は裏返して使用しても焦点調節を
必要としないレチクルの構造を提供することにあ
る。 An object of the present invention is to provide a reticle structure that does not require focus adjustment even when used upside down.
本考案のレチクルの特徴は、ガラス基板の一主
面に所定のパターンを有し、前記一主面に前記ガ
ラス基板と同質且つ厚さの等しいガラス板が積層
されてなることにある。 The reticle of the present invention is characterized in that it has a predetermined pattern on one main surface of a glass substrate, and that glass plates of the same quality and thickness as the glass substrate are laminated on the one main surface.
以下本発明のレチクルの実施例を第3図を用い
て説明する。 An embodiment of the reticle of the present invention will be described below with reference to FIG.
同図aに示すようにガラス基板8の一主面に所
定のパターン7が形成されたレチクル3の、前記
パターン7を有する一主面の周縁部または四隅等
パターン領域外の部分に接着剤9を塗布し、前記
ガラス基板と同質の且つ厚さの等しい透明なガラ
ス基板8′を重ね合せて押圧する。 As shown in FIG. 5A, an adhesive 9 is applied to a portion outside the pattern area such as the peripheral edge or four corners of one main surface of a reticle 3 having a predetermined pattern 7 formed on one main surface of a glass substrate 8. A transparent glass substrate 8' of the same quality and thickness as the glass substrate is stacked and pressed.
このようにすると同図bに示すように所定のパ
ターン7をガラス基板8,8′で挾んだサンドイ
ツチ構造のレチクル3′が得られる。 In this way, a reticle 3' having a sandwich structure in which a predetermined pattern 7 is sandwiched between glass substrates 8 and 8' is obtained, as shown in FIG.
このレチクル3′は同図cに示すように裏返す
ことによりパターン7の左右が反転し、しかも支
持台上に載置した時、パターンの位置は同じにな
る。従つてどちらの向きで用いてもDSWの焦点
を調節する必要はない。 When this reticle 3' is turned over as shown in FIG. 3c, the left and right sides of the pattern 7 are reversed, and when placed on the support stand, the positions of the patterns are the same. Therefore, there is no need to adjust the focus of the DSW when used in either orientation.
上記実施例は同図dに示すように変形できる。 The above embodiment can be modified as shown in FIG.
即ちガラス基板8及び8′を支持枠10で挾み
込んで固定してもよい。 That is, the glass substrates 8 and 8' may be sandwiched between the support frame 10 and fixed.
ガラス基板8,8′を重ね合せて固定するには
上記実施例以外の方法を用いても良く特に限定す
る必要はない。 For stacking and fixing the glass substrates 8, 8', methods other than the above embodiments may be used and there is no need to limit the method in particular.
以上説明したごとく本発明のレチクルを用いれ
ば、半導体基板表面に所定のパターンを左右反転
することなく直接焼付けることが可能であり、し
かもあらためてDSWの焦点調節を行なう必要が
ない。 As explained above, by using the reticle of the present invention, it is possible to directly print a predetermined pattern on the surface of a semiconductor substrate without horizontally reversing it, and there is no need to adjust the focus of the DSW again.
第1図及び第2図は従来のレチクルの説明に供
する正面図及び要部断面図、第3図は本発明の実
施例を示す要部断面図であれ。
3,3′……レチクル、7……パターン、8,
8′……ガラス基板、9……接着剤、10……支
持枠。
1 and 2 are a front view and a cross-sectional view of a main part to explain a conventional reticle, and FIG. 3 is a cross-sectional view of a main part showing an embodiment of the present invention. 3,3'...Reticle, 7...Pattern, 8,
8'...Glass substrate, 9...Adhesive, 10...Support frame.
Claims (1)
レチクルの、前記一主面に前記ガラス基板と同質
且つ厚さの等しいガラス基板が積層されてなるこ
とを特徴とするレチクル。 1. A reticle having a predetermined pattern on one principal surface of a glass substrate, the reticle comprising a glass substrate having the same quality and thickness as the glass substrate laminated on the one principal surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1979105524U JPS6131330Y2 (en) | 1979-07-31 | 1979-07-31 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1979105524U JPS6131330Y2 (en) | 1979-07-31 | 1979-07-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5623939U JPS5623939U (en) | 1981-03-04 |
JPS6131330Y2 true JPS6131330Y2 (en) | 1986-09-11 |
Family
ID=29338181
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1979105524U Expired JPS6131330Y2 (en) | 1979-07-31 | 1979-07-31 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6131330Y2 (en) |
-
1979
- 1979-07-31 JP JP1979105524U patent/JPS6131330Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS5623939U (en) | 1981-03-04 |
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