JPS63131143A - Photomask - Google Patents
PhotomaskInfo
- Publication number
- JPS63131143A JPS63131143A JP61277330A JP27733086A JPS63131143A JP S63131143 A JPS63131143 A JP S63131143A JP 61277330 A JP61277330 A JP 61277330A JP 27733086 A JP27733086 A JP 27733086A JP S63131143 A JPS63131143 A JP S63131143A
- Authority
- JP
- Japan
- Prior art keywords
- chromium
- layers
- mask pattern
- photomask
- transparent plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 24
- 229910052804 chromium Inorganic materials 0.000 abstract description 23
- 239000011651 chromium Substances 0.000 abstract description 23
- 239000000758 substrate Substances 0.000 abstract description 14
- 239000004065 semiconductor Substances 0.000 abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000005350 fused silica glass Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的コ
（産業上の利用分野）
本発明はフォトマスクに関し、特に投影型露光装置に用
いられるフォトリングラフイー用フォトマスクに係わる
。DETAILED DESCRIPTION OF THE INVENTION [Objective of the Invention (Industrial Application Field) The present invention relates to a photomask, and particularly to a photomask for photophosphorography used in a projection exposure apparatus.
（従来の技術）
従来、フォトリソグラフィー用フォトマスクとして第３
図に示すものが知られている。図中の１は溶融石英から
なる透明板である。この透明板１の厚さは均一である。(Prior art) Conventionally, the third type of photomask for photolithography was used.
The one shown in the figure is known. 1 in the figure is a transparent plate made of fused silica. The thickness of this transparent plate 1 is uniform.
前記透明板１の表面には、クロムｌ！１２が形成されて
いる。このりＯム唐の有無により、光の透過・非透過が
決められる。The surface of the transparent plate 1 is coated with chrome l! 12 are formed. The presence or absence of this layer determines whether light is transmitted or not.
ところで、第３図に示す従来のフォトマスクは現在広く
使われているが、上記クロム層２が同一平面上に形成さ
れるため、投影露光装置のマスクとして使用する場合に
はマスクの象も同一平面上に形成されることになる。し
かし、近年、投影型露光装置の解像度が向上してきてお
り、１譚より細かいパターンの像を形成できるようにな
ってきたが、その反面焦点深度も１−前後と狭くなって
きている。例えば、半導体装置の露光の際には、パター
ンを形成すべき半導体基板上に１譚前後の段差があるこ
とが通例である。このため、半導体基板の底部に焦点を
合せると、上記基板の上部の像がぼやけてしまう。つま
り、基板上に段差がある場合には解像度が悪くなるとい
う問題点がある。By the way, the conventional photomask shown in FIG. 3 is currently widely used, but since the chromium layer 2 is formed on the same plane, the image of the mask is also the same when used as a mask for a projection exposure device. It will be formed on a flat surface. However, in recent years, the resolution of projection exposure apparatuses has improved and it has become possible to form images with finer patterns than 1-tan, but on the other hand, the depth of focus has also become narrower, to around 1-tan. For example, when exposing a semiconductor device, it is common for there to be a step difference of about one step on the semiconductor substrate on which a pattern is to be formed. Therefore, when focusing on the bottom of the semiconductor substrate, the image of the top of the substrate becomes blurred. In other words, if there is a step on the substrate, there is a problem in that the resolution deteriorates.
こうしたことから、基板の段着を少なくするような工程
を導入して上記欠点を回避する技術を用いることもある
。しかし、この場合、追加工程によるコストの増大が避
けられず、しかもそのコストは生産する半導体基板の滑
に比例する。For this reason, techniques are sometimes used to avoid the above drawbacks by introducing a process that reduces the number of layers of substrates. However, in this case, an increase in cost due to the additional process is unavoidable, and the cost is proportional to the slippage of the semiconductor substrate to be produced.
（発明が解決しようとする問題点）
本発明は上記事情に鑑みてなされたもので、被処理物の
段差による解像度の低下を抑制できるフォトマスクを提
供することを目的とする。(Problems to be Solved by the Invention) The present invention has been made in view of the above-mentioned circumstances, and an object of the present invention is to provide a photomask capable of suppressing a decrease in resolution due to a step difference in an object to be processed.
［発明の構成］
（問題点を解決するための手段と作用）本発明は、透明
板と、この透明板上に設けられ表面が異なる平面に存在
する不透明なマスクパターンとを具備することを要旨と
し、半導体基板等の被処理物に段差があった場合でも、
マスクパターンの形状も基板の段差に応じて形成される
ため、解像度の減少が著しく少なくできる。[Structure of the Invention] (Means and Effects for Solving Problems) The gist of the present invention is to include a transparent plate and an opaque mask pattern provided on the transparent plate and having surfaces on different planes. Therefore, even if there is a step on the workpiece such as a semiconductor substrate,
Since the shape of the mask pattern is also formed according to the level difference of the substrate, the decrease in resolution can be significantly reduced.
（実施例） 以下、本発明の一実施例を第１図を参照して説明する。(Example) An embodiment of the present invention will be described below with reference to FIG.
図中の１１は、溶融石英からなる透明板である。11 in the figure is a transparent plate made of fused silica.
この透明板１１上には、第１のクロム層１２が形成され
、これらクロム層１２を含む前記透明板１１上にはシリ
コン酸化膜（ＳｉＯ２１！１）１３が形成されている。A first chromium layer 12 is formed on this transparent plate 11, and a silicon oxide film (SiO21!1) 13 is formed on the transparent plate 11 including these chromium layers 12.
この酸化膜１３上に、前記第１のクロム層１２とマスク
パターンを構成する第２のクロム層１４が形成されてい
る。ここで、マスクパターンを構成する第１のクロム層
１２と第２のクロム層１４は、露光を行なうべき半導体
基板の段差に合せて設定されている。但し、半導体基板
の段差をｄ２．２つのクロム層１２．１４間の光学的厚
さをｄｌ、投影露光装置の縮小率をＲ：１とすると、ｄ
ｌはｄ、＝Ｒ２ｄ２によって定められる。A second chromium layer 14 forming a mask pattern with the first chromium layer 12 is formed on this oxide film 13. Here, the first chromium layer 12 and the second chromium layer 14 constituting the mask pattern are set in accordance with the level difference of the semiconductor substrate to be exposed. However, if the step of the semiconductor substrate is d2, the optical thickness between the two chromium layers 12 and 14 is dl, and the reduction ratio of the projection exposure apparatus is R:1, then d
l is defined by d,=R2d2.
上記実施例によれば、マスクパターンを構成する第１・
第２のクロム層１２．１４が夫々半導体基板の段差に対
応して透明板１１、シリコン酸化膜１３上に形成されて
いるため、第１のクロム層１２の焦点面と第２のクロム
層１４の焦点面とは異なった位置に形成される。従って
、半導体基板による段差による解像度の低下を従来と比
べ少なくできる。なお、半導体基板の段差部は一般に複
雑であるが、上記実施例のように２つのクロム層１２．
１４によるマスクパターンを使用しても、十分な効果が
得られる。２つのクロム層によってもなお十分な段差形
状の再現が不十分な場合には、３つ以上のクロム層の組
合わせをとればよい。また、異なるクロム１ＦＪ１２，
１４の間パターンが切れて困る場合には、第１図に示す
ように異なるりＯムＩＭ１２．１４間に合せのための余
裕をとっておくとよい。According to the above embodiment, the first
Since the second chromium layers 12 and 14 are formed on the transparent plate 11 and the silicon oxide film 13 in correspondence with the steps of the semiconductor substrate, the focal plane of the first chromium layer 12 and the second chromium layer 14 is formed at a position different from the focal plane of Therefore, the reduction in resolution due to the difference in level caused by the semiconductor substrate can be reduced compared to the conventional method. Incidentally, although the stepped portion of a semiconductor substrate is generally complicated, two chromium layers 12.
Even if a mask pattern according to No. 14 is used, a sufficient effect can be obtained. If the step shape cannot be sufficiently reproduced even with two chromium layers, a combination of three or more chromium layers may be used. Also, different chromium 1FJ12,
If it is a problem that the pattern is cut off between 12 and 14, it is advisable to leave a margin for different IM 12 and 14 adjustments as shown in FIG.
また、上記実施例によれば、クロムＭ１２゜１４からな
るマスクパターンにより多数回のリソグラフィ一工程を
行なうことができ、大量生産時のコストの上昇分は無視
しつる。Further, according to the above embodiment, one lithography process can be performed many times using a mask pattern made of M12.14 chromium, and the increase in cost during mass production can be ignored.
なお、本発明に係るフォトマスクは、上記実施例のもの
に限らず、第２図に示すものでもよい。Note that the photomask according to the present invention is not limited to that of the above embodiment, but may be one shown in FIG. 2.
このフォトマスクは、透明板１１の上に例えばシリコン
酸化膜で予め段差部１５を形成し、その上に所定のクロ
ムからなるマスクパターン１６を形成したものである。In this photomask, a stepped portion 15 is formed in advance using, for example, a silicon oxide film on a transparent plate 11, and a mask pattern 16 made of predetermined chromium is formed thereon.
この時のｄｌは上記式と同じよに決めればよい。第２図
に示すフォトマスクによっても、異なる平面にマスクパ
ターン１６を形成できる。また、異なる層と層の間もマ
スクパターン１６が存在するので、異なる層間の合せを
行なう必要もない。dl at this time can be determined in the same manner as the above formula. The mask pattern 16 can also be formed on different planes using the photomask shown in FIG. Furthermore, since the mask pattern 16 exists between different layers, there is no need to align different layers.
また、上記フォトマスク（第１図及び第２図図示）は投
影型露光装置にも縮小型露光装置にも適用できるが、縮
小投影露光型装置に使う方が効果が大きい。この場合に
は、マスク寸法を大きくとることができ、マスクの加工
・製造が容易なためである。Furthermore, although the photomask (shown in FIGS. 1 and 2) can be applied to both a projection type exposure apparatus and a reduction type exposure apparatus, it is more effective when used in a reduction type exposure type apparatus. In this case, the mask size can be increased and the mask can be easily processed and manufactured.
［発明の効果］
以上詳述した如く本発明によれば、従来と比へ被処理物
の段差による解像度の低下を著しく少なくし得るフォト
マスクを提供できる。[Effects of the Invention] As described in detail above, according to the present invention, it is possible to provide a photomask that can significantly reduce the reduction in resolution due to the step difference in the object to be processed compared to the conventional photomask.
第１図は本発明の一実施例に係るフォトマスクの断面図
、第２図は本発明の他の実施例に係るフオドマスクの断
面図、第３図は従来のフォトマスクの断面図である。
１１・・・透明板、１２．１４４４−・・・クロム層、
１３．１５・・・シリコン酸化膜。
出願人代理人 弁理士 鈴江武彦
第１図
第２図
第３図FIG. 1 is a cross-sectional view of a photomask according to one embodiment of the present invention, FIG. 2 is a cross-sectional view of a food mask according to another embodiment of the present invention, and FIG. 3 is a cross-sectional view of a conventional photomask. 11...Transparent plate, 12.1444-...Chromium layer,
13.15...Silicon oxide film. Applicant's agent Patent attorney Takehiko Suzue Figure 1 Figure 2 Figure 3
Claims (3)
平面に存在する不透明なマスクパターンとを具備するこ
とを特徴とするフォトマスク。(1) A photomask comprising a transparent plate and an opaque mask pattern provided on the transparent plate and having surfaces on different planes.
夫々形成されていることを特徴とする特許請求の範囲第
１項記載のフォトマスク。(2) The photomask according to claim 1, wherein the opaque mask patterns are formed on two different planes.
に不透明なマスクパターンが形成されていることを特徴
とする特許請求の範囲第１項記載のフォトマスク。(3) A photomask according to claim 1, characterized in that a transparent stepped portion is formed on a transparent plate, and an opaque mask pattern is formed thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61277330A JPS63131143A (en) | 1986-11-20 | 1986-11-20 | Photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61277330A JPS63131143A (en) | 1986-11-20 | 1986-11-20 | Photomask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63131143A true JPS63131143A (en) | 1988-06-03 |
Family
ID=17582024
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61277330A Pending JPS63131143A (en) | 1986-11-20 | 1986-11-20 | Photomask |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63131143A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04285957A (en) * | 1991-03-15 | 1992-10-12 | Fujitsu Ltd | Exposure method and production of reticle |
| US5384218A (en) * | 1992-03-31 | 1995-01-24 | Mitsubishi Denki Kabushiki Kaisha | Photomask and pattern transfer method for transferring a pattern onto a substrate having different levels |
-
1986
- 1986-11-20 JP JP61277330A patent/JPS63131143A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04285957A (en) * | 1991-03-15 | 1992-10-12 | Fujitsu Ltd | Exposure method and production of reticle |
| US5384218A (en) * | 1992-03-31 | 1995-01-24 | Mitsubishi Denki Kabushiki Kaisha | Photomask and pattern transfer method for transferring a pattern onto a substrate having different levels |
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