JP3110855B2 - Method of manufacturing projection exposure substrate and pattern forming method using this substrate - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a substrate for projection exposure used in a lithography process of a semiconductor device and a method of forming a pattern using the substrate for projection exposure.

[0002]

2. Description of the Related Art With the advance of semiconductor technology, the speed and integration of a semiconductor device and a semiconductor device have been increased.
As a result, the necessity of pattern miniaturization has become increasingly higher,
Pattern dimensions have also been required to be finer and more precise. For the purpose of satisfying this requirement, short-wavelength light such as far ultraviolet light has been used as an exposure light source. However, a process using a 248 nm oscillation line of a KrF excimer laser, which is about to be used as a next-generation exposure light source, is in the research stage, although a chemically amplified resist is being developed as a resist material, and is not yet practically used at this time. Have difficulty. When the wavelength of the exposure light source is changed in this manner, it is necessary to develop the material, and it will take a considerable period of time until practical use.

In recent years, attempts have been made to make patterns finer without changing the exposure light source (stepper).
One such technique is the phase shift method. In this method, a phase inversion layer is partially provided in a light transmitting portion, and the effect of diffraction of light from an adjacent pattern is removed, thereby improving pattern accuracy. There are several types of this phase shift method, and the phase difference between two adjacent light transmitting portions is alternately set to 1
A Levenson type having a structure provided at 80 ° is particularly known.
However, in this method, it is difficult to exhibit the effect when three or more patterns are adjacent. That is, when the optical phase difference between the two patterns is 180 °, the remaining one pattern has the same phase as one of the two preceding patterns. As a result, the patterns having the phase difference of 180 ° are resolved. However, there is a problem that patterns having a phase difference of 0 ° are not resolved. In order to solve this problem, it is necessary to fundamentally review the device design, and it is quite difficult to immediately put it into practical use. Therefore, as a more practical phase shift method, a phase shift mask such as a halftone type or a shifter edge type has been devised.

A halftone type phase shift mask is formed by forming a relatively large pattern with a light shielding film, and disposing a semitransparent film having a phase different from that of a substrate by 180 ° with respect to a fine pattern.

In the shifter edge type phase shift mask, a relatively large pattern is formed by a light-shielding film, and a fine pattern has a phase of light transmitted through the substrate of 180 °.
A transparent film having a different transmittance of 100% is provided.

[0006]

However, when a light-shielding film, a translucent film, and a transmissive film are to be formed on one mask, these portions are conventionally formed by independent exposure. There has been a problem that the alignment accuracy is reduced.

SUMMARY OF THE INVENTION The present invention has been made in consideration of the above problems, and has as its object to provide a method of manufacturing a projection exposure substrate having good pattern alignment accuracy and a method of forming a pattern using the substrate. Is to do.

[0008]

According to the present invention , when a desired pattern comprising a first film and a second film is formed on a transparent substrate, the first pattern is formed on the transparent substrate to be larger than the desired pattern. Forming a second film having a higher intensity transmittance than the first film on the transparent substrate and the first film; and forming the second film on the second film. Forming a resist pattern corresponding to the desired pattern; removing the second film and the first film using the resist pattern as a mask; and removing the resist pattern. It is characterized by.

Further , a first film and a first film are formed on a transparent substrate.
A pattern composed of a second film having a higher intensity transmission
In a method of manufacturing a projection exposure substrate to be formed,
Required for alignment with equipment or processing substrates
Alignment mark with higher intensity transmission than the first film
Simultaneously with the processing of the second film having the first film and the second film
Characterized by processing the area where the two films are stacked
And

[0010]

[0011]

First, a light-shielding film or a semi-transparent film pattern (first pattern) having a size larger than a desired size is formed on a transparent substrate. A semi-transparent film or a permeable film pattern (second pattern) is formed so as to include a pattern according to dimensions, and the second pattern is used as a mask to remove the protrusions of the first pattern, thereby forming a pattern between the patterns. It is possible to manufacture a projection exposure substrate having good alignment accuracy.

[0012]

Embodiments of the present invention will be described below in detail with reference to the drawings. (Example 1)

The first embodiment relates to the preparation of a half-tone projection exposure substrate for g-line. FIG. 1 is a desired pattern diagram, and a pattern 10 on FIG. 1 is an alignment mark required for alignment with a projection exposure apparatus or a processing substrate. FIGS. 2 to 8 are manufacturing process diagrams of this pattern.

Here, (a) is a plan view,
(B) is a sectional view along AA '. First, the Si substrate 10
On top of this, Cr is deposited by sputtering to a thickness of 700 Å, followed by CrOx to a thickness of 300 Å.

Next, a resist for EB (EBR- manufactured by Toray)
9) is applied to a thickness of 0.5 μm, and then the first drawing with an electron beam is performed, followed by development to form a resist pattern.

Next, using this resist pattern as a mask, wet etching is performed with a cerium nitrate ammonium solution to form a Cr / CrOx pattern 101. The Cr pattern 101 formed at this time is formed to have a desired size larger by an amount corresponding to the alignment accuracy in forming a pattern by the second drawing later, for example, 0.2 μm (FIG. 2).

Next, a Si film 102 having a thickness of 61 is formed on the entire surface of the substrate.
Deposition is performed by sputtering at a control of 0 Å. At this time, the thickness of the Si film 102 is set to (2k + 1) λ / (n−1) (λ: so that the transmitted light of the Si film 102 has a phase difference of 180 ° with respect to the transmitted light of the Si substrate 100. Exposure light wavelength, n: refractive index, k: integer).
The refractive index of the Si film 102 with respect to the g-line (λ = 436 nm) of a mercury lamp is n = 4.57, and the extinction coefficient is a = 2.80 ×
10 ⁻³ (A ⁻¹ ). By adding the term of the extinction coefficient to the above equation, it is possible to calculate a more strict film thickness that causes a phase difference of 180 °. Incidentally, the intensity transmittance of the formed Si film with respect to the g-line was 15% (FIG. 3).

Next, an electron beam resist (SAL-601) 103 manufactured by Shipley Co., Ltd. is formed on this substrate to a thickness of 0.5 μm, and further thereon, a charge-up prevention at the time of electron beam drawing is performed. Conductive film 104 is formed to a thickness of 0.2 μm (FIG. 4). Next, the conductive film 104 and the electron beam resist 103 are irradiated with an electron beam at a dose of 3 μJ / cm ^2. Performs the second drawing. Next, development is performed to form a resist pattern 105. The pattern formed at this time includes all parts of the light shielding part and the translucent part (FIG. 5).

Next, using the formed resist pattern 105 as a mask, the Si film 106 in the opening of the resist is removed by reactive ion etching (RIE) using a mixed gas of CF ₄ and O ₂ (FIG. 6). Further, by RIE using a mixed gas of Cl ₂ and O ₂ ,
The Ox / Cr film 107 is removed (FIG. 7). At this time,
In the region where the turn 101 and the Si film 102 are stacked,
The mark 10 is formed.

Next, the resist is removed and a desired pattern is formed.
108 and a translucent film pattern 102 are formed. As described above, since the thickness of the translucent film pattern 102 is controlled so that the phase difference between the transmitted light of the pattern and the transmitted light of the substrate becomes 180 °, the light amplitudes of the opposite phases are added. As a result, the light intensity becomes zero at the edge of the shifter, and a finer pattern can be formed than in the related art (FIG. 8).

In this method, the Si film serving as the phase shifter may be formed by CVD or the like. If the phase difference between the substrate and the substrate is within a range in which the resolution is improved, the thickness of the Si film may be changed.

When a mask pattern consisting of only a fine pattern is formed in the present invention, a good result can be obtained by using a semi-permeable film Si having a thickness of 610 Å instead of the CrOx / Cr film. Further, instead of Si, it is also possible to use a material such as SiN or Ge which has a relatively similar film quality such as transmittance and refractive index to Si.

Using this mask, a positive resist PFR
-A wafer coated with GX250 (manufactured by Nippon Synthetic Rubber Co., Ltd.) having a thickness of 1.3 μm was subjected to reduced projection exposure using a g-line stepper with NA = 0.54 and σ = 0.5. At this time,
The alignment mark 10 on this mask was used for alignment with a projection exposure apparatus or a processing substrate. As a result, in the prior art, a focus margin of 0.2 μm, 0.45 μm
m, the focus margin is 1.0 μm
m.

Conventionally, in the case of a relatively wide light-shielding pattern, an increase in light intensity is observed at the center of the pattern due to the influence of side lobes, which also affects the resist pattern. A phenomenon that a depression is formed at the center of the resist pattern has been observed.
It could be formed without forming a depression at the center of the pattern.

In this case, the displacement of the pattern formed of the light-shielding film and the translucent film was 0.15 μm on the projection substrate (0.03 μm on the transfer substrate) when this method was not used. However, this method was below the measurement limit. (Example 2)

The second embodiment relates to a shifter edge type projection exposure substrate for g-line. FIG. 1 shows a desired pattern diagram, and a pattern 10 on FIG. 1 is an alignment mark required for alignment with a projection exposure apparatus or a processing substrate. FIGS. 9 to 12 are manufacturing process diagrams of this pattern. Here, (a) is a plan view, and (b) is a cross-sectional view taken along BB ′. First, 700 angstroms of Cr on the Si substrate 200,
Subsequently, CrOx is formed to a thickness of 300 angstroms.

Next, EB resist (EBR-9 manufactured by Toray)
Is formed to a thickness of 0.5 μm, and then the first drawing with an electron beam is performed, followed by development to form a resist pattern.

Using this resist pattern as a mask, wet etching is performed with a cerium nitrate ammonium solution to form a Cr / CrOx pattern 201. The Cr pattern formed at this time is formed to have a desired size larger than the desired dimension by an amount equivalent to the alignment accuracy in forming the pattern by the second drawing later, for example, 0.2 μm (FIG. 9).

Next, an i-line resist is applied to a thickness of 0.8 μm, exposed by a light exposure device, developed, and a resist pattern 205 is provided in a portion other than a desired pattern to be formed.

Next, SiO _{2 is} formed in the opening of the resist pattern.
The film 202 is deposited to a thickness of 610 angstroms by a sputtering method. The intensity transmittance of the formed SiO ₂ film 202 with respect to the g-line was almost 100% (FIG. 1).
0).

Next, the SiO ₂ film on the resist and the resist
Remove 205. The SiO ₂ pattern 202 formed at this time
Included all parts of the light shielding part and the translucent part (FIG. 11).

Next, RI using a mixed gas of Cl ₂ and O ₂
By E, the CrOx / Cr film 207 at the opening of SiO ₂ is removed, and a desired pattern 208 and a transparent film pattern 202 are formed. As described above, this transparent film pattern 202
The transmitted light of this pattern has a phase difference of 1 with respect to the transmitted light of the substrate.
Since the film thickness is controlled to be 80 °, the light amplitudes of the opposite phases are added to each other, so that the light intensity becomes zero at the boundary with the substrate, and a finer pattern can be formed than before ( (FIG. 12). In this method, SiO ₂
The shifter film may be formed by CVD or the like. Also S
The thickness of the iO ₂ film may be changed without departing from the spirit of the present invention. Also, instead of SiO ₂ , Si
M whose film quality such as transmittance and refractive index is relatively similar to O ₂
gF ₂ , CaF ₂ or the like may be used.

Using this mask, a positive resist PFR
Projection exposure was performed on a wafer coated with GX250 (manufactured by Nippon Synthetic Rubber Co., Ltd.) to a thickness of 1.3 μm using a g-line stepper with NA = 0.54 and σ = 0.5. At this time, the alignment mark 10 on the present mask was used for alignment with a projection exposure apparatus or a processing substrate. As a result, in the related art, the focus margin was improved to 1.0 μm in the pattern of 0.25 μm and the focus margin of 0.45 μm.

Conventionally, in the case of a relatively wide light-shielding pattern, an increase in light intensity is observed at the center of the pattern due to the influence of side lobes, which also affects the resist pattern. A phenomenon that a depression is formed at the center of the resist pattern has been observed.
It could be formed without forming a depression at the center of the pattern.

In this case, the displacement of the pattern formed of the light-shielding film and the translucent film was 0.15 μm on the projection substrate (0.03 μm on the transfer substrate) when this method was not used. However, this method was below the measurement limit. (Example 3)

The third embodiment relates to the preparation of a halftone projection exposure substrate for i-line. FIG. 1 is a diagram of a desired pattern, and a pattern 10 on FIG. 1 is an alignment mark required for alignment with a projection exposure apparatus or a processing substrate. 13 to 19 are views showing the manufacturing process of this pattern. Here, (a) is a plan view, and (b) is a cross-sectional view taken along CC ′. First, 700 angstroms of Cr on Si substrate 300,
Subsequently, CrOx is formed to a thickness of 300 angstroms.

Next, a Toray EBR-9 resist having a thickness of 0.5 μm is formed, and after a first drawing with an electron beam is performed, development is performed to form a resist pattern. Using this resist pattern as a mask, wet etching is performed using a cerium nitrate ammonium ammonium solution to obtain Cr /
A CrOx pattern 301 is formed. Cr formed at this time
The pattern is formed larger than the desired size by an amount corresponding to the alignment accuracy when forming the pattern by the second drawing later, for example, 0.2 μm (FIG. 13). Then
When the Si film 302 has an amplitude transmittance of 16% for i-line, for example,
The thickness is controlled to be 370 Å.

Further, a SiO ₂ film 303 is formed thereon to a thickness of 1500 angstroms. The laminated film of Si and SiO ₂ formed at this time was
It showed a phase difference of 180 ° and an intensity transmittance of 1.5% (FIG. 1).
4).

Next, an electron beam resist SAL-601 304 manufactured by Shipley Co., Ltd. was formed on this substrate to a thickness of 0.5 μm, and a conductive film was formed thereon to prevent charge-up during EB drawing. The film 305 is formed to a thickness of 0.2 μm (FIG. 15).

Next, the conductive film 305 and the resist for electron beam
Irradiation dose of 3μJ / cm ² by electron beam on 304 Performs the second drawing. Further development is performed to obtain a resist pattern 306 (FIG. 16).

Next, the formed resist pattern 30
Using the mask 6 as a mask, reactive ion etching (RIE) using CF ₄ gas
O ₂ 307 is removed, and RIE with a mixed gas of CF ₄ and O ₂ is performed to remove Si 308 at the opening of the resist (FIG. 17). Next, RIE using a mixed gas of Cl ₂ and O ₂
As a result, the CrOx / Cr film 309 at the opening of the resist is removed (FIG. 18).

Next, the resist 306 is removed, and a desired pattern 310 and a translucent film pattern 311 are formed. As described above, the thickness of the translucent film pattern 311 is controlled such that the phase difference between the transmitted light of the pattern and the transmitted light of the substrate becomes 180 °, so that the light amplitudes of the opposite phases are added. Thus, the light intensity becomes zero at the boundary with the substrate, and a finer pattern can be formed than before (FIG. 19).

In this method, the formation of the shifter film composed of the laminated film of Si and SiO ₂ may be performed by CVD or the like. Further, the thicknesses of the Si film and the SiO ₂ film may be changed without departing from the spirit of the present invention.

Further, instead of Si, it is also possible to use a material such as SiN or Ge which has relatively similar film quality such as transmittance and refractive index to Si. Further, SiO ₂ and the transmittance in place of SiO _2, it is possible to use also MgF _2, CaF _2, etc. which relatively film quality such as the refractive index is similar.

Using this mask, a positive resist PFR
A wafer coated with iX500 (manufactured by Nippon Synthetic Rubber Co., Ltd.) having a thickness of 1.3 μm, i = 500, σ = 0.5
Projection exposure was performed with a line stepper. At this time, the alignment mark 10 on the present mask was used for alignment with a projection exposure apparatus or a processing substrate. As a result, in the related art, the focus margin was improved to 1.0 μm in the pattern of 0.35 μm with the focus margin of 0.2 μm.

Conventionally, in the case of a relatively wide light-shielding pattern, an increase in light intensity is observed at the center of the pattern due to the influence of side lobes, which also affects the resist pattern. A phenomenon that a depression is formed at the center of the resist pattern has been observed.
It could be formed without forming a depression at the center of the pattern. At this time, the positional deviation of the pattern formed by the light-shielding film and the translucent film was 0.15 μm on the projection substrate (0.03 μm on the transfer substrate) when this method was not used. It was below the measurement limit. (Example 4)

The fourth embodiment relates to the production of a shifter edge type projection exposure substrate for g-line. FIG. 1 is a configuration diagram of a desired pattern. A pattern 10 on FIG. 1 is an alignment mark required for alignment with a projection exposure apparatus or a processing substrate. FIGS. 20 to 26
Is a manufacturing process drawing of this pattern. Here, (a) is a plan view, and (b) is a cross-sectional view taken along line DD ′. First, Cr is formed to a thickness of 700 angstroms on the Si substrate 400, and then CrOx is formed to a thickness of 300 angstroms.

Next, an EBR-9 resist manufactured by Toray Co., Ltd. is formed thereon to a thickness of 0.5 μm, and after a first drawing with an electron beam is performed, development is performed to form a resist pattern.

Next, using this resist pattern as a mask, wet etching is performed using a cerium nitrate ammonium solution to form a Cr / CrOx pattern 401. The Cr pattern 401 formed at this time is formed larger than desired dimensions by an amount equivalent to the alignment accuracy when forming a pattern by the third exposure, for example, 0.2 μm (FIG. 20). Next, an i-line resist is applied to a thickness of 0.8 μm and exposed by a light exposure device to form a resist pattern 402 (FIG. 21).

Then, SiO ₂ was formed in the opening of the resist pattern.
403 is deposited to a thickness of 610 angstroms by a liquid phase growth method (FIG. 22), and the resist pattern 402 is removed. The SiO ₂ pattern 403 formed at this time is g
The intensity transmittance with respect to the line was 100%, and the phase difference with respect to the substrate was 180 °. Further, the SiO ₂ pattern 403 has a desired size corresponding to the alignment accuracy for forming a pattern by the third exposure later, for example, 0.2 μm.
It is formed larger by μm (FIG. 23). Next, an i-line resist is applied to a thickness of 0.8 μm, a third exposure is performed by a light exposure device, development is performed, and a resist pattern 40 is formed.
4 (FIG. 24).

Next, CrOx / Cr 405 and SiO ₂ 40 projecting from the resist pattern formed by the third exposure by reactive ion etching using Cl _2.
6 is removed (FIG. 25).

Further, the resist is stripped to obtain a desired mask pattern 401 and a transparent film pattern 408. As described above, the film thickness of the translucent film pattern 408 is controlled so that the phase difference between the transmitted light of this pattern and the transmitted light of the substrate becomes 180 °, so that the light amplitudes of the opposite phases are added. Accordingly, the light intensity becomes zero at the boundary with the substrate, and a finer pattern can be formed than before (FIG. 26).

In this method, the formation of the shifter film of SiO ₂ may be performed by CVD or the like. Further, the thickness of the SiO ₂ film may be changed without departing from the spirit of the present invention. Further, SiO ₂ and the transmittance in place of SiO _2, refractive index, etc. relatively MgF film quality is similar _2,
It is also possible to use a material such as CaF ₂ .

Using this mask, a positive resist PFR
A wafer coated with -GX250 (manufactured by Nippon Synthetic Rubber Co., Ltd.) having a thickness of 1.3 μm was subjected to projection exposure using a g-line stepper with NA = 0.54 and σ = 0.5. At this time, the alignment mark 10 on the present mask was used for alignment with a projection exposure apparatus or a processing substrate. As a result, in the related art, the focus margin was improved to 1.0 μm in the pattern of 0.25 μm and the focus margin of 0.45 μm.

Conventionally, in the case of a relatively wide light-shielding pattern, an increase in light intensity is observed at the center of the pattern due to the influence of side lobes, which also affects the resist pattern. A phenomenon that a depression is formed at the center of the resist pattern has been observed.
It could be formed without forming a depression at the center of the pattern. At this time, the positional deviation of the pattern formed by the light-shielding film and the translucent film was 0.15 μm on the projection substrate (0.03 μm on the transfer substrate) when this method was not used. It was below the measurement limit.

From experiments, it was found that in this embodiment, the intensity transmittance of the transparent substrate at the exposure wavelength was 60% or more, and the intensity transmittance of the transmission portion with respect to the transparent substrate was desirably 90% or more. I have. Further, it is desirable that the intensity transmittance of the light shielding portion with respect to the transparent substrate is 1% or less. Further, the intensity transmittance of the translucent portion to the transparent substrate is desirably 1% or more and 15% or less.

The phase of the exposure light transmitted through the phase shifter formed of the transparent film or the translucent film is 180 ° × (2n + 1) ± 1 with respect to the phase of the exposure light transmitted through the transparent substrate.
It is known that when the relationship of 0 ° (n: an integer) is satisfied, the resolution improving effect or the focus margin expanding effect by the phase shift is good.

[0058]

As described above, the pattern made of the first film is formed to be larger than the desired size by an amount corresponding to the alignment accuracy of the subsequent exposure, and then the pattern is formed to the desired size made of the second film. By forming the pattern and using the pattern as a mask and removing the protrusions of the first film, it is possible to form a projection exposure substrate with good alignment accuracy between the first pattern and the second pattern. It is possible.

[Brief description of the drawings]

FIG. 1 shows a desired mask pattern.

FIG. 2 is a manufacturing process diagram of the projection exposure substrate described in the first embodiment.

FIG. 3 is a manufacturing process diagram of the projection exposure substrate described in the first embodiment.

FIG. 4 is a manufacturing process diagram of the projection exposure substrate described in the first embodiment.

FIG. 5 is a manufacturing process diagram of the projection exposure substrate described in the first embodiment.

FIG. 6 is a manufacturing process diagram of the projection exposure substrate described in the first embodiment.

FIG. 7 is a manufacturing process diagram of the projection exposure substrate described in the first embodiment.

FIG. 8 is a manufacturing process diagram of the projection exposure substrate described in the first embodiment.

FIG. 9 is a manufacturing process diagram of the projection exposure substrate described in the second embodiment.

FIG. 10 is a manufacturing process diagram of the projection exposure substrate described in the second embodiment.

FIG. 11 is a manufacturing process diagram of the projection exposure substrate described in the second embodiment.

FIG. 12 is a manufacturing process diagram of the projection exposure substrate described in the second embodiment.

FIG. 13 is a manufacturing process diagram of the projection exposure substrate described in the third embodiment.

FIG. 14 is a manufacturing process diagram of the projection exposure substrate described in the third embodiment.

FIG. 15 is a manufacturing process diagram of the projection exposure substrate described in the third embodiment.

FIG. 16 is a manufacturing process diagram of the projection exposure substrate described in the third embodiment.

FIG. 17 is a manufacturing process diagram of the projection exposure substrate described in the third embodiment.

FIG. 18 is a manufacturing process diagram of the projection exposure substrate described in the third embodiment.

FIG. 19 is a manufacturing process diagram of the projection exposure substrate described in the third embodiment.

FIG. 20 is a manufacturing process diagram of the projection exposure substrate described in the fourth embodiment.

FIG. 21 is a manufacturing process diagram of the projection exposure substrate described in the fourth embodiment.

FIG. 22 is a manufacturing process diagram of the projection exposure substrate described in the fourth embodiment.

FIG. 23 is a manufacturing process diagram of the projection exposure substrate described in the fourth embodiment.

FIG. 24 is a manufacturing process diagram of the projection exposure substrate described in the fourth embodiment.

FIG. 25 is a manufacturing process diagram of the projection exposure substrate described in the fourth embodiment.

FIG. 26 is a manufacturing process diagram of the projection exposure substrate described in the fourth embodiment.

[Explanation of symbols]

10 Alignment marks 100, 200, 30
0,400 ... Transparent substrate 101,201,301,401 ... Cr / CrOx pattern 102,302 ... Si film 103,105,
205, 304, 306, 402, 404 ... resist pattern 104, 305 ... conductive film 106, 30
8... Si film 107, 3 in removed resist opening
09,405: CrOx in the removed resist opening
/ Cr film 108... Desired pattern (Cr / CrOx
+ Si film) 202, 303, 408... SiO ₂ film 207... CrOx / Cr film 208 of removed SiO ₂ opening 208.
.. Desired pattern (Cr / CrOx + SiO ₂ film) 30
7, 406: SiO ₂ film at removed resist opening 310: desired pattern (CrOx / Cr + Si film + SiO ₂ film) 311: translucent film pattern (Si film + SiO ₂ film) 403: LPD SiO ₂ film
407: desired pattern (CrOx / Cr film).

──────────────────────────────────────────────────続 き Continuation of front page (72) Inventor Katsuya Okumura 1 Komagi Toshiba-cho, Saiwai-ku, Kawasaki-shi, Kanagawa Prefecture Inside the Tamagawa Plant, Toshiba Corporation (56) References JP-A-4-162039 (JP, A) (58) ) Surveyed field (Int.Cl. ⁷ , DB name) G03F 1/00-1/16

Claims (6)

(57) [Claims] A step of forming a desired pattern comprising a first film and a second film on a transparent substrate; forming the first film on the transparent substrate to be larger than the desired pattern; Forming the second film having a higher intensity transmittance than the first film on the transparent substrate and the first film; and forming a resist on the second film corresponding to the desired pattern. Forming a pattern, using the resist pattern as a mask, removing the second film and then the first film, and removing the resist pattern. Manufacturing method. 2. A first film on a transparent substrate and higher than the first film.
Forming a pattern composed of a second film having a high transmittance;
In a method of manufacturing a substrate for projection exposure, an apparatus for projection exposure is provided.
Or the alignment required for alignment with the processing substrate
Has a higher intensity permeability than the first membrane.
The first film and the second film simultaneously with the processing of the second film
Characterized by processing and forming a region where
A method for manufacturing a projection exposure substrate. 3. The first film is a light-shielding film, and the second film is a translucent film.
The desired pattern includes a light-shielding portion, a translucent portion, and a transparent portion.
The feature is that all patterns consisting of excess parts are included
The method for producing a projection exposure substrate according to claim 1. 4. The second film is a single layer or a multi-layer.
2. The manufacturing of a substrate for projection exposure according to claim 1, wherein
Method. 5. The projection exposure apparatus according to claim 1, wherein:
Transferring and developing a desired pattern onto a photosensitive body formed on a processing substrate using the projection exposure substrate mounted thereon.
That pattern forming method. 6. A photoreceptor is disposed in proximity to the projection exposure substrate according to claim 1 , and the projection exposure apparatus is used to place the photoreceptor on the processing substrate.
The desired pattern is transferred to the formed photoreceptor and developed.
And a pattern forming method.