JP3469570B2 - Manufacturing method of exposure mask - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a projection exposure technique used in a lithography process in manufacturing a semiconductor device, and more particularly to a method of manufacturing an exposure mask utilizing a phase shift effect.

[0002]

2. Description of the Related Art As semiconductor technology has advanced, semiconductor devices have become faster and more highly integrated, and accordingly, finer pattern dimensions and higher precision in semiconductor elements have been required. . For the purpose of satisfying this requirement, short-wavelength light such as far-ultraviolet light has been used as an exposure light source. On the other hand, in recent years, attempts have been made to miniaturize the exposure light source without changing it. There is a phase shift method as one of the methods. This method is intended to improve the pattern accuracy by partially providing a phase inversion layer (phase shifter) in the light transmitting portion to remove the adverse effect of light diffraction generated between adjacent patterns.

Among the phase shift methods, the Levenson type phase shift method is known as a method of improving the resolution performance (JP-A-62-50811). In this method, phase shifters are alternately provided to the light transmitting portions of the mask in which the light shielding pattern is arranged. The phase of the light transmitted through the phase shifter is inverted by 180 ° with respect to the light transmitted through the portion where the phase shifter is not arranged. By reversing the phase of the light of the adjacent transmissive portions in this way, negative interference of light between the patterns is generated and the resolution performance is improved.

As a method for manufacturing a Levenson type phase shift mask, a method of forming a substrate by engraving is known (Japanese Patent Laid-Open No. 62-189468). However, in the mask using the engraving of the substrate, even if the opening size is the same, there is a problem in that there is a difference in light intensity between the phase-shifted part where the substrate is dug and the non-phase-shifted part where the substrate is not dug. . This problem is caused by the fact that the aperture size is optically narrowed due to the interference of the pattern edge part parallel to the optical axis in the phase shift part.

In order to solve this, in the conventional exposure mask, the desired exposure amount was adjusted by adjusting the opening size of the pattern. However, such adjustment by the opening dimension has a restriction by the pattern such that a desired opening width cannot be provided depending on the size of the adjacent pattern.

[0006]

As described above, conventionally, in the Levenson type phase shift mask of the substrate engraving type, the desired exposure amount is different between the phase shift part and the non-phase shift part, and the desired exposure amount is adjusted by the pattern adjustment. Since the adjustment is performed by adjusting the opening dimension, there is a restriction due to the pattern such that a desired opening width cannot be provided depending on the size of the adjacent pattern.

The present invention has been made in consideration of the above circumstances, and an object thereof is to adjust desired exposure amounts of a phase shift portion and a non-phase shift portion without being restricted by patterns. It is to provide a method of manufacturing an exposure mask that can be performed.

[0008]

(Structure) The essence of the present invention is to adjust the image intensity, which has been performed by a conventional exposure mask.
This is achieved not by adjusting the opening width but by adjusting the amount of engraving of the translucent substrate.

That is, according to the present invention , 180
In a method of manufacturing a Levenson-type exposure mask having a phase difference of °, a pattern having a first pattern data group including all opening patterns is formed on a light-shielding film formed on a transparent substrate. No. 1 photosensitive resin film is formed, the light-shielding film is selectively etched using the pattern of the photosensitive resin film as a mask, and the remaining photosensitive resin film is removed to form an opening pattern group; A second photosensitive resin film having a pattern of a second pattern data group is formed by extracting an opening pattern having an optical path length difference of approximately λ with the light passing through the non-processed region of the optical substrate. A step of etching the transparent substrate using the pattern of the resin film as a mask so that a difference in optical path length for light transmitted through the opening before processing is approximately λ / 2, and further removing the remaining photosensitive resin film; , Of the transparent substrate Forming a third photosensitive resin film having a pattern of a third pattern data group in which an opening pattern having an optical path length difference of λ / 2 and λ with respect to light passing through the processed region is extracted, and the photosensitive resin is formed. A step of etching the transparent substrate using the film pattern as a mask so that a difference in optical path length for light transmitted through an unprocessed region of the substrate increases by approximately λ / 2, and further removing the remaining photosensitive resin film; It is characterized by including and.

Further, according to the present invention , 180
In a method of manufacturing a Levenson-type exposure mask having a phase difference of °, a pattern having a first pattern data group including all opening patterns is formed on a light-shielding film formed on a transparent substrate. No. 1 photosensitive resin film is formed, the light-shielding film is selectively etched using the pattern of the photosensitive resin film as a mask, and the remaining photosensitive resin film is removed to form an opening pattern group; A second photosensitive resin film having a pattern of a second pattern data group is formed by extracting an opening pattern having an optical path length difference of approximately λ for light transmitted through a non-processed region of the optical substrate, and the photosensitive resin is formed. The translucent substrate is etched using the film pattern as a mask so that the optical path length difference for the light passing through the opening before processing is approximately λ, and the remaining photosensitive resin film is removed. Of the light-sensitive substrate Forming a third photosensitive resin film having a pattern of a third pattern data group in which an opening pattern having an optical path length difference of about λ / 2 with respect to light passing through the processed region is extracted, and the pattern of the photosensitive resin film is formed. Etching the translucent substrate with the mask as a mask so that the optical path length difference with respect to the light passing through the opening before processing is approximately λ / 2, and further removing the remaining photosensitive resin film. Is characterized by.

Further, according to the present invention , 180
In a method of manufacturing a Levenson-type exposure mask having a phase difference of °, a pattern having a first pattern data group including all opening patterns is formed on a light-shielding film formed on a transparent substrate. No. 1 photosensitive resin film is formed, the light-shielding film is selectively etched using the pattern of the photosensitive resin film as a mask, and the remaining photosensitive resin film is removed to form an opening pattern group; Of all the phase shift apertures and non-phase shift parts of the optical substrate, the aperture pattern in which the optical path length difference for the light transmitted through the non-processed region of the transparent substrate is approximately λ is extracted. A second photosensitive resin film having a pattern is formed, and the pattern of the photosensitive resin film is used as a mask so that the optical path length difference with respect to the light passing through the opening before processing the transparent substrate becomes approximately λ / 2. Etching Further, a step of removing the remaining photosensitive resin film, and a light-transmissive substrate of the phase-shift opening pattern and the non-phase-shift portion where the optical path length difference for the light transmitted through the non-processed region of the light-transmissive substrate becomes approximately λ. Forming a third photosensitive resin film having a pattern of a third pattern data group in which an opening pattern having an optical path length difference of about λ / 2 and λ for light transmitted through the non-processed region is formed. A step of etching the transparent substrate using the pattern of the resin film as a mask so that the optical path length difference for the light transmitted through the non-processed region of the substrate increases by approximately λ / 2, and further removing the remaining photosensitive resin film. , And are included.

Here, either the second step or the third step may be performed first. Further, instead of engraving the substrate as the phase shift portion, a phase shift member may be laminated. Furthermore, after the first step, the phase shift member may be formed on the transparent substrate, and thereafter, the second step and the third step may be performed. However, the pattern data used at this time must be created as follows.

The first pattern data group including all the aperture patterns and the light passing through the non-processed region of the light-transmissive substrate have an optical path length difference of almost 0. A second pattern data group in which an opening pattern having an optical path length difference of approximately λ / 2 or λ from the light transmitted through the non-processed region of the light-transmissive substrate is extracted, and light transmitted through the non-processed region of the light-transmissive substrate. A third pattern data group is created by extracting a non-phase shift aperture having an optical path length difference of about λ / 2 or λ.

Further, the third pattern data has an optical path length difference of about 2 / for light transmitted through the non-processed region of the transparent substrate.
When data of both λ and the non-phase shift part of λ are included, it is necessary to create fourth pattern data by dividing these data. Further, when both of the non-phase shift portions have an optical path length difference of approximately 2 / λ and λ with respect to the light transmitted through the non-processed region of the translucent substrate, the third pattern data is converted into the third pattern data in the third step. A fourth step in which the pattern data of 4 is replaced is also required.

The present invention is also characterized by the following configurations (a) to (d) in the pattern data creating method used for drawing or inspecting the exposure mask.

(A) First pattern data group including all aperture patterns and second pattern data obtained by extracting aperture patterns having an optical path length difference of approximately λ for light transmitted through the non-processed region of the transparent substrate. A group and a third pattern data group in which an opening pattern having an optical path length difference of about λ / 2 and λ for light transmitted through the non-processed region of the transparent substrate are extracted are created.

(B) For the first pattern data group including all the opening patterns, and for the light transmitted through the non-processed region of the transparent substrate of all the phase shift openings and the non-phase shift portions of the transparent substrate. A second pattern data group in which an aperture pattern having an optical path length difference of approximately λ is extracted, and a phase shift aperture pattern and a non-phase shift having an optical path length difference of approximately λ for light transmitted through a non-processed region of a transparent substrate. The optical path length difference for the light passing through the non-processed area of the translucent substrate is about λ
A third pattern data group is created by extracting aperture patterns of / 2 and λ.

(C) The second pattern data in which the first pattern data group including all the aperture patterns and the aperture pattern in which the optical path length difference for the light transmitted through the non-processed area of the transparent substrate is approximately λ are extracted. A group and a third pattern data group in which an opening pattern having an optical path length difference of about λ / 2 for light transmitted through the non-processed region of the transparent substrate is extracted are created.

(D) The first pattern data group including all the opening patterns and the opening pattern and the transparent substrate in which the optical path length difference between the light passing through the non-processed region of the transparent substrate is almost zero. A second pattern data group in which the opening pattern formed by cutting the transparent substrate is extracted and a third pattern data group in which the opening pattern formed by cutting the translucent substrate are extracted are created.

(Function) In a pattern in which a translucent substrate is dug, the image intensity tends to be attenuated due to the existence of an edge when the exposure light is transmitted through the substrate. This phenomenon is caused by the Levenson-type phase shift mask in which one of the adjacent openings is dug and the light intensity is attenuated in the dug and created,
This is the main cause of the problem that the desired pattern size cannot be obtained. Conventionally, the adjustment of the light intensity for one opening is
Although this is done by adjusting the opening width, this method has a problem that a desired opening width cannot be provided when there is another opening adjacent to the opening.

On the other hand, the present invention pays attention to the fact that the image intensity is attenuated by the presence of the edge, and this effect is applied to a region to which the phase shift method is not applied, that is, a pattern in which the surrounding pattern exists with the same engraving amount. On the other hand, the light intensity is adjusted by adjusting the amount of excavation. Therefore, according to the present invention, the image intensity can be adjusted without the restriction of the pattern.

The following adjustments are preferably made to attenuate the light intensity.

(1) Structure in which the optical path length difference is approximately λ / 2 with respect to the non-engraved portion of the transparent substrate (2) The optical path difference is approximately λ with respect to the non-engraved portion of the transparent substrate
In this case, according to (1) and (2), the light intensity can be sequentially reduced even if the aperture width is the same. The structure may be determined so that the depth of focus obtained after exposure becomes maximum. This method can be applied to the case where the Levenson portion is formed by the shifter engraving structure (whether or not the edge of the light shielding portion and the etching portion of the transparent substrate are the same) and the shifter deposition structure.

Furthermore, in the engraved type (for example, Japanese Patent Application No. 6-43618) in which the Levenson portion is formed so as to substantially coincide with the edge of the light shielding portion and the etching portion of the transparent substrate, the following (3) It is possible to adjust so as to amplify the light intensity by selecting the structure.

(3) A structure in which the non-engraved portion of the transparent substrate is substantially 0. By appropriately selecting the structures (1) to (3), the Levenson-applied portion and the non-Levenson-applied portion are separated from each other. Adjustment of the light intensity difference was facilitated.

[0026]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First, before explaining the embodiments of the present invention, the basic structure of an exposure mask according to the present invention will be shown.

FIG. 1 is a cross-sectional view of a mask in which an isolated pattern having substantially the same size as the phase shift portion existing in the non-phase shift portion is formed so that the phase difference with respect to the light transmitted through the transparent substrate is 0 degree. Is. The light-shielding film 2 having an opening is formed on the light-transmitting substrate 1, and the substrate 1 is dug in the opening of the light-shielding film 2 in the phase shift portion. Regarding the engraved amount of the substrate in the phase shift portion, one of the adjacent ones has an optical path length difference of λ with respect to the non-engraved region and the other has an optical path length difference of λ / 2 with respect to the non-engraved region.

In FIG. 2, the opening of the non-phase shift portion is made larger than the opening of the phase shift portion. Regarding the aperture of the non-phase shift part, (a) is a mask created so that the phase difference is 0 degree with respect to the light transmitted through the non-duration part of the transparent substrate, that is, the non-phase shift part is dug in the substrate. If you don't
(B) is a mask prepared so as to have a phase difference λ / 2 with respect to the light transmitted through the non-engraved portion of the transparent substrate, that is, when the substrate is dug by λ / 2, (c) is a transparent layer. This is a case where a mask formed so as to have a phase difference λ with respect to light transmitted through a non-engraved portion of an optical substrate, that is, a substrate is dug by λ.

FIG. 3 shows a case where the opening of the non-phase shift portion is a periodic pattern having a size larger than that of the opening of the phase shift portion. 3A to 3C correspond to FIGS. 2A to 2C, respectively.

Further, FIG. 4A is a sectional view of a mask prepared so that the periodic end of the phase shift portion in FIG. 1 has a phase difference λ / 2 with respect to the light transmitted through the transparent substrate.
2B is a cross-sectional view of a mask prepared so that the periodic edge of the phase shift portion has a phase difference λ / 2 with respect to light transmitted through the transparent substrate in FIG. 2B, and FIG. 3 (c) is a cross-sectional view of a mask formed so that the periodic end of the phase shift portion has a phase difference λ / 2 with respect to light transmitted through the transparent substrate, and FIG. 4 (d) is shown in FIG. 3 (a). ), The period end of the phase shift portion has a phase difference of λ / 2 with respect to the light transmitted through the transparent substrate.
The cross-sectional view of the mask created so that

Each embodiment of the present invention relating to the various exposure masks as described above will be described below.

(First Embodiment) This embodiment is shown in FIG.
The present invention relates to a mask data creating method used for manufacturing the exposure mask of (a).

FIG. 5 shows a cross-sectional structural view in which a partial region of the exposure mask is extracted. There are five openings here,
Opening part 501, opening part 502, opening part 50 in order from the left
3, the opening 504, and the opening 505.

First, these openings were identified. At the time of discrimination, the desired optical path length differences generated with respect to the exposure wavelength when the exposure light transmitted through the transparent substrate is used as a reference are summarized. As a result, as shown in FIG. 5, 501 and 503 are patterns of the optical path length difference λ, and 502 and 504 are the optical path length difference λ /.
As the second pattern, 505 was recognized as a pattern having an optical path length difference of zero.

Next, the process is divided into groups.

First, in the step of extracting data for all openings, all openings 501 to 505 are extracted, and the first
Of the pattern data of. Next, in the step of extracting the openings having the optical path length difference λ, the openings 501 and 503 were extracted and put together as a second pattern data group. Next, in the step of extracting the openings having the optical path length differences λ / 2 and λ, the openings 501 to 504 are extracted, and the third
Of the pattern data of.

Here, the first pattern data group owns data having a value substantially the same as the mask processing dimension. Meanwhile, the second
In the pattern data group and the third pattern data group, when the light-shielding film does not exist at the pattern boundary, the mask processing dimension is made to match, and when the light-shielding film exists at the pattern boundary, the mask processing dimension becomes equal to or larger than the mask processing dimension. Is adjusted. The adjustment amount may be any value within the width of the light-shielding film, and is preferably wider than the alignment accuracy value of the drawing device. Further, when the openings and the light shields are periodically repeated, the adjustment amount may be about half the width of the light shield film.

(Second Embodiment) In the present embodiment, the pattern data group created in the first embodiment is used.
The present invention relates to a method for manufacturing the exposure mask shown in FIG. 2A, which is used for exposure with an rF excimer laser (wavelength 248 nm), and relates to a method for manufacturing the exposure mask according to claim 1.

FIG. 6 is a cross-sectional view showing a manufacturing process of the exposure mask according to this embodiment. First, a mask blank in which a light-shielding film having a composition of a CrON film 602 is formed on one surface of a transparent substrate 601 made of quartz is prepared, and the light-shielding film 602 of this mask blank has photosensitivity to an electron beam. A resin film was formed. This resin film was drawn with an electron beam using the first pattern data group created in the first embodiment and further developed. Then, the exposed CrON film 602 was removed by etching with a cerium secondary ammonium nitrate solution, and the photosensitive resin film was further removed to form a light shielding film pattern (FIG. 6A).

Next, a resin film 603 sensitive to ultraviolet rays was formed on the substrate having a light-shielding pattern (FIG. 6).
(B)). A resist pattern was formed on this resin film 603 by using the second pattern data group created in the first embodiment and drawing with ultraviolet rays and developing. Here, the second pattern data group was created by increasing the width of the light-shielding film to 1/2 when the light-shielding film 602 is adjacent to the opening (FIG. 6C).

Using this resist pattern as a mask, the light-transmitting substrate 601 was etched by CF ₄ gas for approximately 248 nm (FIG. 6D). The etching amount was such that the optical path length difference of λ / 2 with respect to the non-etching surface with respect to the exposure wavelength with respect to the refractive index of 1.5 at 248 nm of the transparent substrate 601.

Next, the photosensitive resin film 603 is removed and a new photosensitive resin film 604 is newly formed on the pattern surface (FIG. 6).
(E)). A resist pattern was formed on this resin film 604 by using the third pattern data group created in the first embodiment and drawing with ultraviolet rays and developing. Here, the third pattern data group is created by increasing the width of the light-shielding film to 1/2 when the light-shielding film 602 is adjacent to the opening (FIG. 6F).

Using this resist pattern as a mask, the translucent substrate 601 was etched by CF4 gas to a depth of d = 248 nm (FIG. 6 (g)). This etching amount is
The light-transmitting substrate 601 has a refractive index of 1.5 at 248 nm, but the exposure wavelength is λ / 2 with respect to the non-etching surface
It is a size that gives a difference in optical path length. After that, the photosensitive resin film 604 was removed to create a desired exposure mask (FIG. 6 (h)).

In the present embodiment, after the state shown in FIG. 6 (d), the photosensitive resin film 603 is not peeled off, and subsequently, drawing and development are performed by the third pattern data group and the same as in FIG. 6 (f). Resist pattern is formed, and the light-transmissive substrate 601 is etched by CF ₄ gas for approximately 248 nm using this resist pattern as a mask to form a photosensitive resin film 60.
3 is removed to create a desired exposure mask (Fig. 6 (h))
You may.

This embodiment relates to a method for manufacturing a KrF excimer laser exposure mask, but the exposure wavelength is not limited to this, and the I-line (365 nm) of a mercury lamp and Ar are used.
F excimer laser (193 nm), XeHg lamp (2
It is also applicable to an exposure mask used for 48 to 250 nm). In this case, the etching amount d is the exposure wavelength λ
And the refractive index n of the transparent substrate at the exposure wavelength. At this time, the etching amount d may be determined according to d = λ / (2 (n-1)). Particularly preferably, the exposure characteristic can be improved by setting the etching amount corresponding to the optical path length difference λ to be slightly smaller than 2d. The initial etching amount d1 of the transparent substrate is preferably d1> D−d2 with respect to the final etching amount D and the etching amount d2 of the second transparent substrate. This is for the following reason. That is, in the second etching, the gas supply rate decreases in the portion where the groove has already been formed and the etching rate becomes slow, so that it may not be possible to grind d2 and the desired value may not be achieved. On the other hand, by setting d1 as described above, the etching amount can be optimally controlled.

In this embodiment, quartz is used for the transparent substrate.
However, Si is not limited to this. ₃N_Four, Al
₂O₃, CaF₂, MgF₂, HfO₂Instead of
May be. In this case, it is used for etching the transparent substrate
The gas may be selected according to the material of the translucent substrate.

Further, although the film having CrON as a composition is used as the light-shielding material, it is not limited to this, and MoSi, S may be used.
A film containing i in the composition may be used.

Also in the drawing when creating the mask pattern,
It is possible to use electron beams and ultraviolet rays at appropriate times. However,
When an electron beam is used after forming the light-shielding pattern, it is preferable to form a conductive film on or below the photosensitive resin film and then perform the exposure.

(Third Embodiment) This embodiment relates to the exposure mask prepared in the second embodiment, where the exposure using the KrF excimer laser as the light source is NA = 0.5, σ = 0.3.
It was done under the conditions of.

The pattern existing on the mask is 0.18 μm for the Levenson application region (phase shift part).
0.20 μm for line and space (L & S) pattern and Levenson non-application area (non-phase shift part)
It had an isolated space pattern.

As the resist, a resist sensitive to a KrF excimer laser is used and is formed on the substrate to be processed to have a film thickness of 0.5 μm. It should be noted that the substrate to be processed is provided with a film in which unevenness due to the wiring of the substrate is made flat in advance, and a film for reducing the reflection of exposure light is provided thereon.

Regarding the Levenson non-application area, FIG.
The depth of focus in the case of the following structure is shown in FIG.
The exposure conditions were (NA = 0.5, σ = 0.3, Levenson method application pattern = 0.18 μmL & S pattern, Levenson method non-application pattern = 0.20 μm isolated space pattern). In FIG. 9, the depth of focus is indicated by a square, the horizontal axis indicates the logarithm of the exposure amount, and the vertical axis indicates the defocus position. The definition of the depth of focus is obtained by allowing an exposure amount variation of 10% and setting the dimensional variation amount at that time to ± 10% with respect to a desired value. The area surrounded by a square is the allowable range. The depth of focus calculated from this was 0.73 μm from FIG. 9 (a).

On the other hand, the depth of focus when a mask having a similar pattern structure is formed with the structure of FIG.
As shown in (b), none was obtained.

In the pattern configuration used in this embodiment, it was found that a large depth of focus can be obtained by creating a non-Levenson region with a light path length difference of 0 for light transmitted through a transparent substrate.

As shown in the present embodiment, in the non-Levenson region having the same opening dimension as that of the Levenson region, when there is a region of aperture: light-shielding portion = 1: 3 or more, that region is It is desirable that the optical path length difference for light transmitted through the transparent substrate is zero. This does not depend on the exposure wavelength, and the same can be said when the standardized dimensions are similar.

Further, as shown in FIG. 4A, the outermost processed shape of the periodic pattern constituted by the minimum dimension for which the phase shift effect is obtained in this embodiment is the non-etched portion of the transparent substrate. When the relative phase difference with the exposure light passing through is set to λ, the image intensity is weak in that part,
It was possible to obtain only a focal depth of 0.5 μm or less in this portion in a regular manner. On the other hand, as in the present embodiment, the relative phase difference with the exposure light transmitted through the non-etched portion of the transparent substrate at the outermost part of the periodic pattern to which the Levenson method is applied is set to be λ / 2. , A depth of focus of 0.73 μm could be obtained.

As can be seen from this embodiment, the relative phase difference between the outer peripheral portion of the periodic pattern and the exposure light transmitted through the non-etched portion of the transparent substrate needs to be adjusted according to the target depth of focus. . That is, the relative phase difference may be either λ or λ / 2 when there is a sufficient margin, but is preferably λ / 2 when a larger depth of focus is obtained.

(Fourth Embodiment) This embodiment is shown in FIG.
The present invention relates to another example of the mask data creation method used for manufacturing the exposure mask of (a).

FIG. 7 shows a sectional structure view in which a partial region of the exposure mask is extracted. There are five openings here,
The opening 701, the opening 702, and the opening 70 in order from the left.
3, an opening 704, and an opening 705.

First, these openings were identified. At the time of discrimination, the desired optical path length differences generated with respect to the exposure wavelength when the exposure light transmitted through the transparent substrate is used as a reference are summarized. As a result, as shown in FIG. 7, 701 and 703 are used as patterns of the optical path length difference λ, and 702 and 704 are used as the optical path length difference λ /.
As the second pattern, 705 was recognized as a pattern having an optical path length difference of zero.

Next, the process is divided into groups.

First, in the step of extracting data of all openings, all openings 701 to 705 were extracted and put together as a first pattern data group. Next, in the step of extracting the openings having the optical path length difference λ, the openings 701 and 703 were extracted and put together as a second pattern data group. Next, in the step of extracting the openings having the optical path length difference λ / 2, the openings 702 and 704 were extracted and summarized as the third pattern data group.

Here, the first pattern data group possesses data having a value substantially the same as the mask processing dimension. Meanwhile, the second
In the pattern data group and the third pattern data group, when the light-shielding film does not exist at the pattern boundary, the mask processing dimension is made to match, and when the light-shielding film exists at the pattern boundary, the mask processing dimension becomes equal to or larger than the mask processing dimension. Is adjusted. The adjustment amount may be any value within the width of the light-shielding film, and is preferably wider than the alignment accuracy value of the drawing device. Further, when the openings and the light shields are periodically repeated, the adjustment amount may be about half the width of the light shield film.

(Fifth Embodiment) In this embodiment, the pattern data group created in the fourth embodiment is used.
A method for manufacturing the exposure mask of FIG. 2A, which is used for exposure with an rF excimer laser (wavelength 248 nm), and relates to a method of manufacturing the exposure mask according to claim 2.

FIG. 8 is a sectional view showing a manufacturing process of the exposure mask according to this embodiment. First, a mask blank in which a light-shielding film having a composition of a MoSiON film 802 is formed on one surface of a transparent substrate 801 made of quartz is prepared, and the light-shielding film 802 of this mask blank has photosensitivity to an electron beam. A resin film was formed. For this resin film,
Drawing was performed with an electron beam using the first pattern data group created in the fourth embodiment, and further developed. And
The exposed MoSiON film was removed by etching with CF ₄ + O ₂ gas, and the photosensitive resin film was further removed to form a light-shielding film pattern (FIG. 8A).

Next, a resin film 803 sensitive to ultraviolet rays was formed on the substrate having the light-shielding pattern (FIG. 8).
(B)). A resist pattern was formed on this resin film 803 by using the second pattern data group created in the fourth embodiment and drawing with ultraviolet rays and developing. Here, the second pattern data group was created by increasing the width of the light-shielding film to ½ when the light-shielding film 803 is adjacent to the opening (FIG. 8C).

Using the resist pattern as a mask, the transparent substrate 801 was etched with CF ₄ gas at a depth of approximately D = 490 nm (FIG. 8 (d)). This etching amount is relative to the refractive index of 1.5 at 248 nm of the transparent substrate 801,
The size was such that the optical path length difference was approximately λ with respect to the exposure wavelength with respect to the non-etched surface.

Then, the photosensitive resin film 803 is removed and a new photosensitive resin film 804 is newly formed on the pattern surface (FIG. 8).
(E)). A resist pattern was formed on this resin film 804 by drawing and developing with ultraviolet rays using the third pattern data group created in the fourth embodiment. Here, the third pattern data group was created by increasing the light-shielding film width to half the width of the light-shielding film 804 when the light-shielding film 804 is adjacent to the opening (FIG. 8F).

Using this resist pattern as a mask, the transparent substrate 801 was etched by CF ₄ gas to a depth of d = 248 nm (FIG. 8 (g)). This etching amount is
The light-transmitting substrate 801 has a refractive index of 1.5 at 248 nm, whereas the exposure wavelength is λ / 2 with respect to the non-etching surface
It is a size that gives a difference in optical path length. After that, the photosensitive resin film 804 was removed to form a desired exposure mask (FIG. 8 (h)).

Although the present embodiment relates to a method for manufacturing a KrF excimer laser exposure mask, the exposure wavelength is not limited to this, and the I-line (365 nm) of a mercury lamp, Ar, and the like.
F excimer laser (193 nm), XeHg lamp (2
It is also applicable to an exposure mask used for 48 to 250 nm). In this case, the etching amount d is set to the exposure wavelength λ
And the refractive index n of the transparent substrate at the exposure wavelength. At this time, the etching amount d may be determined according to d = λ / (2 (n-1)). Incidentally, particularly preferably, when the etching amount D corresponding to the optical path length difference λ is set to be slightly smaller than 2d as shown in this embodiment, the exposure characteristic can be improved.

In this embodiment, quartz is used for the transparent substrate.
However, Si is not limited to this. ₃N_Four, Al
₂O₃, CaF₂, MgF₂, HfO₂Instead of
May be. In this case, it is used for etching the transparent substrate
The gas may be selected according to the material of the translucent substrate.

Although a film having MoSiON as a composition is used as the light-shielding material, the material is not limited to this, and Cr, S may be used.
A film containing i in the composition may be used.

Also in the drawing when creating the mask pattern,
It is possible to use electron beams and ultraviolet rays at appropriate times. However,
When an electron beam is used after forming the light-shielding pattern, it is preferable to form a conductive film on or below the photosensitive resin film and then perform the exposure.

(Sixth Embodiment) This embodiment relates to the exposure mask prepared in the fifth embodiment, in which the exposure using a KrF excimer laser as the light source is NA = 0.5 and σ = 0.5.
It was done under the conditions of.

As a pattern existing on the mask, a 0.18 μmL & S pattern was used for the Levenson application region, and a pattern in which a 0.25 μm space and a 0.50 μm line were repeated was used for the Levenson non-application region.

As the resist, a resist sensitive to a KrF excimer laser is used and is formed on the substrate to be processed to have a film thickness of 0.5 μm. It should be noted that the substrate to be processed is provided with a film in which unevenness due to the wiring of the substrate is made flat in advance, and a film for reducing the reflection of exposure light is provided thereon.

Regarding the Levenson non-application area, FIG.
FIG. 10A shows the depth of focus in the case of the structure described below. The exposure conditions are (NA = 0.5, σ = 0.3, Levenson method applied pattern = 0.18 μmL & S pattern, Levenson method non-applied pattern 0.25 μm space & 0.
50 μm line pattern). In FIG. 10, the depth of focus is shown by a square, the horizontal axis shows the logarithm of the exposure amount, and the vertical axis shows the defocus position. The definition of the depth of focus is 1 exposure fluctuation
0% is allowed and the amount of dimensional variation at that time is set to ± 10% with respect to the desired value. The area surrounded by a square is the allowable range. The depth of focus calculated from this is shown in FIG.
From (a), it was 1.20 μm.

On the other hand, the depth of focus when a mask having the same pattern structure is formed with the structure of FIG.
As shown in (b), it was 1.05 μm.

In the pattern configuration used in this embodiment, it was found that a larger depth of focus can be obtained by forming the non-Levenson region with the optical path length difference λ / 2 for the light transmitted through the transparent substrate. .

As shown in the present embodiment, in the non-Levenson region having an opening size of about 1.5 times that of the Levenson region, when there is a region of opening: light-shielding portion = 1: 2, that region is present. On the other hand, it is desirable to create the optical path length difference λ / 2 with respect to the light transmitted through the transparent substrate. This does not depend on the exposure wavelength, and the same can be said when the standardized dimensions are similar.

(Seventh Embodiment) This embodiment is shown in FIG.
The present invention relates to a mask data creating method used for manufacturing the exposure mask of (b).

FIG. 11 shows a cross-sectional structural view in which a partial region of the exposure mask is extracted. There are five openings here, and they are named opening 1101, opening 1102, opening 1103, opening 1104, and opening 1105 in order from the left.

First, these openings were identified. At the time of discrimination, the desired optical path length differences generated with respect to the exposure wavelength when the exposure light transmitted through the transparent substrate is used as a reference are summarized. As a result, as shown in FIG. 11, 1101 and 1103 are patterns with an optical path length difference λ, 1102 and 1104 are patterns with an optical path length difference λ / 2, and 1105 is a pattern (1101 and 1102) with an optical path length difference of approximately λ / 2. Formed by the difference in the amount of excavation).

Next, the process is divided into groups.

First, in the process of extracting the data of all openings, all the openings 1101 to 1105 are extracted,
It is summarized as the first pattern data group. Next, in the process of extracting the openings having the optical path length difference λ of all the phase shift parts and the non-phase shift parts, the openings 1101 to 1104 were extracted and summarized as the second pattern data group.
Next, the phase shift part converts the exposure light transmitted through the non-processed part of the transparent substrate into the part having an optical path length difference of λ and the exposure light transmitted through the non-processed part of the transparent substrate in the non-phase shift part. On the other hand, in the step of extracting the openings having the optical path length differences of λ / 2 and λ, the openings 1101, 1102, and 1105 were extracted and summarized as the third pattern data group.

Here, the first pattern data group owns data having almost the same value as the mask processing dimension. Meanwhile, the second
In the pattern data group and the third pattern data group, when the light-shielding film does not exist at the pattern boundary, the mask processing dimension is made to match, and when the light-shielding film exists at the pattern boundary, the mask processing dimension becomes equal to or larger than the mask processing dimension. Is adjusted. The adjustment amount may be any value within the width of the light-shielding film, and is preferably wider than the alignment accuracy value of the drawing device. Further, when the openings and the light shields are periodically repeated, the adjustment amount may be about half the width of the light shield film.

(Eighth Embodiment) This embodiment uses the pattern data group created by the seventh embodiment, and
Used for rF excimer laser (wavelength 248 nm), FIG.
It relates to a method of manufacturing the exposure mask of (b).

Mo is formed on one surface of the transparent substrate made of quartz.
A mask blank having a light-shielding film having a composition of a SiON film was prepared, and a resin film having photosensitivity to an electron beam was formed on the light-shielding film of the mask blank. This resin film was drawn with an electron beam using the first pattern data group created in the seventh embodiment and further developed. Then, the exposed MoSiON film was removed by etching with CF ₄ + O ₂ gas, and the photosensitive resin film was removed to form a light-shielding film pattern.

Then, after forming a resin film having photosensitivity to ultraviolet rays on the substrate having a light-shielding pattern, the second pattern data group created in the seventh embodiment is used to draw and develop with ultraviolet rays. Thus, a resist pattern was formed. Here, the second pattern data group was created by increasing the width of the light-shielding film to 1/2 when the light-shielding film is adjacent to the opening.

Using this resist pattern as a mask, the translucent substrate was etched with CF ₄ gas into the openings 1101 to 1104 at approximately d = 248 nm. This etching amount has a refractive index of 1.48 at 248 nm of the transparent substrate.
On the other hand, with respect to No. 5, the optical path length difference was approximately λ / 2 with respect to the exposure wavelength with respect to the non-etched surface.

Next, the photosensitive resin film was removed and a new photosensitive resin film was formed on the pattern surface. A resist pattern was formed on this film by drawing and developing with ultraviolet rays using the third pattern data group created in the seventh embodiment. Here, the third pattern data is 1 / the width of the light-shielding film when the light-shielding film is adjacent to the opening.
I made it up to 2.

Using this resist pattern as a mask, the transparent substrate is opened with CF ₄ gas to form openings 1101, 1103, 1
105 was etched at approximately d = 245 nm. This etching amount was such that an optical path length of approximately λ / 2 was given to the non-etching surface with respect to the exposure wavelength with respect to the refractive index of 1.5 at 248 nm of the transparent substrate. After that, the photosensitive resin film was removed to form a desired exposure mask.

Although the present embodiment relates to a method for manufacturing a KrF excimer laser exposure mask, the exposure wavelength is not limited to this, and a mercury lamp I line (365 nm), Ar.
F excimer laser (193 nm), XeHg lamp (2
It is also applicable to an exposure mask used for 48 to 250 nm). In this case, the etching amount d is set to the exposure wavelength λ
And the refractive index n of the transparent substrate at the exposure wavelength. At this time, the etching amount d may be determined according to d = λ / (2 (n-1)). Desirably d
Is preferably set to be 3 to 5% smaller than the value obtained on the right side.

In this embodiment, quartz is used for the transparent substrate.
However, Si is not limited to this. ₃N_Four, Al
₂O₃, CaF₂, MgF₂, HfO₂Instead of
May be. In this case, it is used for etching the transparent substrate
The gas may be selected according to the material of the translucent substrate.

Although a film having MoSiON as a composition is used as the light-shielding material, the material is not limited to this.
A film containing i in the composition may be used.

Also in the drawing when creating the mask pattern,
It is possible to use electron beams and ultraviolet rays at appropriate times. However,
When an electron beam is used after forming the light-shielding pattern, it is preferable to form a conductive film on or below the photosensitive resin film and then perform the exposure.

(Ninth Embodiment) This embodiment relates to the exposure mask formed in the eighth embodiment, where the exposure using a KrF excimer laser as the light source is NA = 0.5, σ = 0.3.
It was done under the conditions of.

As a pattern existing on the mask, a Levenson application region has a 0.18 μmL & S pattern,
It was assumed that there was a 0.25 μmL & S pattern for the Levenson non-application area.

As the resist, a resist sensitive to a KrF excimer laser is used, and it is formed on the substrate to be processed to have a film thickness of 0.5 μm. It should be noted that the substrate to be processed is provided with a film in which unevenness due to the wiring of the substrate is made flat in advance, and a film for reducing the reflection of exposure light is provided thereon.

Levenson non-application area FIG. 3 (a)
FIG. 12 (a) shows the depth of focus in the case of the following structure. In FIG. 12, the depth of focus is shown by a square, the horizontal axis indicates the logarithm of the exposure amount, and the vertical axis indicates the defocus position. The definition of the depth of focus is obtained by allowing an exposure amount variation of 10% and setting the dimensional variation amount at that time to ± 10% with respect to a desired value. The area surrounded by a square is the allowable range. As a result, the depth of focus was 0.49 μm in FIG.

On the other hand, when a mask having a similar pattern structure is formed with the structure shown in FIG.
As shown in (b), a depth of focus of 0.93 μm could be secured.

In the pattern configuration used in this embodiment, it was found that a large depth of focus can be obtained by forming the non-Levenson region with the optical path length difference λ / 2 for the light transmitted through the transparent substrate.

As shown in the present embodiment, in the non-Levenson region having an opening size of about 1.5 times that of the Levenson region, if there is a region of opening: light-shielding portion = 1: 1, it exists in that region. On the other hand, it is desirable to create the optical path length difference λ / 2 with respect to the light transmitted through the transparent substrate. This does not depend on the exposure wavelength, and the same can be said when the standardized dimensions are similar.

(Tenth Embodiment) This embodiment is the eighth embodiment.
2B, exposure using a KrF excimer laser as a light source for the exposure mask corresponding to FIG. 2B was performed under the conditions of NA = 0.5 and σ = 0.5. . Further, here, a comparison is made with the exposure transfer characteristics of an exposure mask corresponding to FIG. 2A created by the same method as that of the second embodiment.

As a pattern existing in the mask, a Levenson application region has a 0.18 μmL & S pattern,
0.50 μm line for Levenson non-application area
There was a 0.25 μm space pattern.

As the resist, a resist sensitive to a KrF excimer laser is used and is formed on the substrate to be processed to have a film thickness of 0.5 μm. It should be noted that the substrate to be processed is provided with a film in which unevenness due to the wiring of the substrate is made flat in advance, and a film for reducing the reflection of exposure light is provided thereon.

Regarding the Levenson non-application area, FIG.
FIG. 13A shows the depth of focus in the case of such a structure. The exposure conditions were (NA = 0.5, σ = 0.53, Levenson method application pattern = 0.18 μm space & line pattern, Levenson method non-application pattern = 0.25 μm space & 0.50 μm line pattern). FIG.
The depth of focus is shown by a square, the horizontal axis shows the logarithm of the exposure amount, and the vertical axis shows the defocus position. The definition of the depth of focus is obtained by allowing an exposure amount variation of 10% and setting the dimensional variation amount at that time to ± 10% with respect to a desired value. The area surrounded by a square is the allowable range. As can be seen from FIG. 13A, no depth of focus could be obtained when the structure shown in FIG. 2A was used.

On the other hand, when a mask having the same pattern structure was formed with the structure shown in FIG. 2B, a focal depth of 1.12 μm could be secured as shown in FIG. 13B. The depth of focus obtained here was almost the same as that of the mask structure shown in FIG. 2A created in the fifth embodiment.

In the pattern configuration used in this embodiment, it was found that a large depth of focus can be obtained by forming the non-Levenson region with the optical path length difference λ / 2 for the light transmitted through the transparent substrate.

As shown in the present embodiment, in the non-Levenson region having an opening size about 1.5 times larger than that of the Levenson region, when there is a region of opening: light-shielding portion = 1: 2, that region is present. On the other hand, it is desirable to create the optical path length difference λ / 2 with respect to the light transmitted through the transparent substrate. This does not depend on the exposure wavelength, and the same can be said when the standardized dimensions are similar.

(Eleventh Embodiment) This embodiment is the eighth embodiment.
Of the exposure mask having the structure shown in FIG. 3 (c), which was created by the same method as that of the embodiment of FIG. 3, was exposed using a KrF excimer laser as a light source under conditions of NA = 0.5 and σ = 0.5. Is. Here, the transfer characteristics with the exposure mask having the structure of FIG. 3A were compared.

As the pattern existing on the mask, 0.18 μmL & S pattern for the Levenson application region,
It was assumed that there was a 0.25 μmL & S pattern for the Levenson non-application area.

As the resist, a resist sensitive to a KrF excimer laser is used and is formed on the unprocessed substrate to have a film thickness of 0.5 μm. It should be noted that the substrate to be processed is provided with a film in which unevenness due to the wiring of the substrate is made flat in advance, and a film for reducing the reflection of exposure light is provided thereon.

Levenson non-application area FIG. 3 (a)
FIG. 14 (a) shows the depth of focus in the case of the following structure. The exposure conditions were (NA = 0.5, σ = 0.53, Levenson method application pattern = 0.18 μmL & S pattern, Levenson method non-application pattern = 0.25 μmL & S pattern). In FIG. 14, the depth of focus is shown by a square, the horizontal axis represents the logarithm of the exposure amount, and the vertical axis represents the defocus position. The definition of the depth of focus is obtained by allowing an exposure amount variation of 10% and setting the dimensional variation amount at that time to ± 10% with respect to a desired value. The area surrounded by a square is the allowable range. Figure 1
As can be seen from FIG. 4 (a), when the structure of FIG. 3 (a) was used, no depth of focus could be obtained.

On the other hand, when a mask having the same pattern structure was formed with the structure of FIG. 3C, a depth of focus of 0.35 μm could be secured as shown in FIG. 14B. .

In the pattern configuration used in this embodiment, it was found that a large depth of focus can be obtained by creating the non-Levenson region with the optical path length difference λ for the light transmitted through the transparent substrate.

As shown in the present embodiment, in the non-Levenson region having an opening size of about 1.5 times that of the Levenson region, if there is a region of opening: light-shielding portion = 1: 1, that region is present. On the other hand, it is desirable to create the optical path length difference λ for the light transmitted through the transparent substrate. This does not depend on the exposure wavelength, and the same can be said when the standardized dimensions are similar.

(Twelfth Embodiment) This embodiment is the first
2 is used for the ArF excimer laser (wavelength 248 nm) using the pattern data group created by the embodiment of FIG.
The present invention relates to a method for manufacturing an exposure mask that exhibits performance equivalent to that of (b).

15 and 16 are cross-sectional views showing the steps of manufacturing the exposure mask according to this embodiment. First, the CrON film 1 is formed on one surface of the transparent substrate 1501 made of quartz.
A mask blank having a light-shielding film having a composition of 502 was prepared, and a resin film having photosensitivity to an electron beam was formed on the light-shielding film 1502 of the mask blank. This resin film was drawn with an electron beam using the first pattern data group created in the first embodiment, and further developed. Then, the exposed CrON film was removed by etching with a cerium diammonium nitrate solution, and the photosensitive resin film was removed to form a light-shielding film pattern (FIG. 15).
(A)).

Next, a resin film 1503 sensitive to ultraviolet rays was formed on the substrate having the light-shielding pattern (FIG. 15 (b)). A resist pattern was formed on this resin film 1503 by using the second pattern data group created in the first embodiment and drawing with ultraviolet rays and developing. Here, the second pattern data was created by increasing the width of the light-shielding film to ½ when the light-shielding film is adjacent to the opening (FIG. 15C).

Using this resist pattern as a mask, the translucent substrate 1501 was etched by CF4 gas at about d = 190 nm (FIG. 15 (d)). This etching amount is
Refractive index of 1.5 at 193 nm of translucent substrate 1501
On the other hand, with respect to the exposure wavelength, λ /
It was a size that gives a difference in optical path length of 2.

Then, the photosensitive resin film 1503 was removed (FIG. 15E). Then, the photosensitive resin film 150 is newly added.
4 was formed on the patterned surface. (FIG.15 (f)). A resist pattern was formed on this resin film 1504 by drawing and developing with ultraviolet rays using the third pattern data group created in the first embodiment. Where the third
The pattern data group of No. 2 was created by increasing the width of the light shielding film to 1/2 when the light shielding film 1502 is present adjacent to the opening (FIG. 15G).

Using this resist pattern as a mask, the transparent substrate was etched by 20 nm using hydrofluoric acid (FIG. 16 (h)). This etching amount is 190
The image intensity is determined to be the same in the portion etched by nm and the portion adjacent thereto. After this,
The photosensitive resin film 1504 was removed (FIG. 16 (i)). Next, a new photosensitive resin film 1505 is newly formed on the pattern surface.
Was formed (FIG. 16 (j)). For the resin film 1505, the third pattern data group created in the first embodiment is inverted, and the opening width is set on the light-shielding film 1502 adjacent to the light-transmitting substrate 1501 from the edge of the light-shielding film 1502. 1
The pattern data was transformed so as to be opened by μm, and a resist pattern was formed by drawing with ultraviolet rays and developing (FIG. 16 (k)).

Using this resist pattern as a mask, the transparent substrate was etched by 190 nm using a fluorine-based gas (FIG. 16 (l)). After that, the photosensitive resin film was removed (FIG. 16 (m)).

In the present embodiment, after the state shown in FIG. 15 (d), the photosensitive resin film 1503 is not peeled off, and then drawing and development are performed by the third pattern data group and the same as in FIG. 15 (g). The resist pattern may be formed, and the translucent substrate 1501 may be etched with a hydrofluoric acid solution using this resist pattern as a mask.

Although the present embodiment relates to a method for manufacturing an ArF excimer laser exposure mask, the exposure wavelength is not limited to this, and the I-line (365 nm) and Kr of a mercury lamp are used.
F excimer laser (248 nm), XeHg lamp (2
It is also applicable to an exposure mask used for 48 to 250 nm). In this case, the etching amount d is the exposure wavelength λ
And the refractive index n of the transparent substrate at the exposure wavelength. At this time, the etching amount d may be determined according to d = λ / (2 (n-1)).

In this embodiment, quartz is used for the transparent substrate.
However, Si is not limited to this. ₃N_Four, Al
₂O₃, CaF₂, MgF₂, HfO₂Instead of
May be. In this case, it is used for etching the transparent substrate
The gas may be selected according to the material of the translucent substrate.

Although the film having CrON as a composition is used as the light-shielding material, it is not limited to this.
A film containing i in the composition may be used.

Also in the drawing when creating the mask pattern,
It is possible to use electron beams and ultraviolet rays at appropriate times. However,
When an electron beam is used after forming the light-shielding pattern, it is preferable to form a conductive film on or below the photosensitive resin film and then perform the exposure.

(Thirteenth Embodiment) This embodiment is the first
2 is used for a KrF excimer laser (wavelength 248 nm) using the pattern data group created by the embodiment of FIG.
The present invention relates to a method for producing a transparent shifter laminated type exposure mask that achieves the same effect as (b).

17 and 18 are sectional views showing the steps of manufacturing the exposure mask according to this embodiment. First, CrON1 is formed on one surface of a transparent substrate 1601 made of quartz.
A mask blank having a light shielding film having a composition of 602 was prepared, and a resin film having photosensitivity to an electron beam was formed on the light shielding film 1602 of the mask blank. This resin film was exposed with an electron beam using the first pattern data group including the full aperture pattern, and further developed. Then, expose the exposed CrON film 1602 to cerium nitrate second
The photosensitive resin film was removed by etching with an ammonium solution to form a light-shielding film pattern (FIG. 17).
(A)).

Then, Si is formed on the pattern surface by the CVD method.
An O ₂ film 1603 was formed to a film thickness of 250 nm (see FIG. 17).
(B)).

Next, a resin film 1604 having photosensitivity to ultraviolet rays was formed on the substrate having the light-shielding pattern (FIG. 17C). A second pattern formed on this film, which has a phase difference of 0 with respect to the exposure light transmitted through the non-deposited (and non-etched) region of the transparent substrate and a portion where the transparent substrate is finally dug. A resist pattern was formed by exposing and developing using the data group. Here, the second pattern data was created such that when the light-shielding film is present adjacent to the opening, it is half the minimum light-shielding film width (FIG. 17D).

Using this resist pattern as a mask, the exposed CVD-SiO ₂ film was etched with CF ₄ gas (FIG. 17E). Then, the photosensitive resin film used for etching was removed (FIG. 17 (f)).

Next, a photosensitive resin film 1605 was formed again on the pattern surface (FIG. 18 (g)). This resin film 16
A resist pattern was formed by exposing and developing a third pattern data group composed of a portion in which a translucent substrate was dug with respect to 05. Here, the third pattern data is created by making the light-shielding film width 0.1 μm larger when the light-shielding film is present adjacent to the opening (FIG. 18).
(H)). The size of 0.1 μm is a value determined as about twice the alignment accuracy of the drawing apparatus.

Using this resist pattern as a mask, the translucent substrate was etched by CF4 gas for approximately 248 nm (FIG. 18 (i)). This etching amount was such that an optical path length difference of λ / 2 with respect to the non-etching surface was obtained with respect to the exposure wavelength with respect to the refractive index of 1.5 at 248 nm of the transparent substrate. After that, the photosensitive resin film was removed to create a desired exposure mask (FIG. 18 (j)).

Although the present embodiment relates to a method for manufacturing an ArF excimer laser exposure mask, the exposure wavelength is not limited to this, and the I-line (365 nm) and Kr of a mercury lamp are used.
F excimer laser (248 nm), XeHg lamp (2
It is also applicable to an exposure mask used for 48 to 250 nm). In this case, the thickness d of the CVD-SiO ₂ film
Is CVD-SiO _{2 at the} exposure wavelength λ and the exposure wavelength.
It is necessary to change it according to the refractive index n. At this time, the film thickness d may be determined according to d = λ / (2 (n-1)).

In this embodiment, quartz is used for the transparent substrate.
However, Si is not limited to this. ₃N_Four, Al
₂O₃, CaF₂, MgF₂, HfO₂Instead of
May be. In this case, it is used for etching the transparent substrate
The gas may be selected according to the material of the translucent substrate.

Also, the deposited phase shift member is CVD-
SiO₂It is not limited to ₃N_Four, Al
₂O₃, CaF₂, MgF₂, HfO₂Instead of
May be. In this case, use for etching the phase shift member.
The gas contained may be selected according to the material of the translucent substrate.

Although the film having CrON as a composition is used as the light-shielding material, it is not limited to this.
A film containing i in the composition may be used.

Also in the drawing when creating the mask pattern,
It is possible to use electron beams and ultraviolet rays at appropriate times. However,
When an electron beam is used after forming the light-shielding pattern, it is preferable to form a conductive film on or below the photosensitive resin film and then perform the exposure.

(Fourteenth Embodiment) This embodiment is the first
2 is used for the ArF excimer laser (wavelength 193 nm) using the pattern data group created by the embodiment of FIG.
The present invention relates to a method for producing a transparent shifter laminated type exposure mask that achieves the same effect as (b).

FIG. 19 is a cross-sectional view showing the manufacturing process of the exposure mask according to this embodiment. First, a mask blank in which a light-shielding film having a composition of a CrON film 1702 is formed on one surface of a transparent substrate 1701 made of quartz is prepared, and an electron beam is sensitized on the light-shielding film 1702 of this mask blank. A resin film was formed. This resin film was exposed with an electron beam using the first pattern data group including the full aperture pattern, and further developed. And
The exposed CrON film 1702 was removed by etching with a cerium diammonium nitrate solution, and the photosensitive resin film was removed to form a light shielding film pattern (FIG. 19A).

Next, a resin film 1703 which is sensitive to ultraviolet rays is formed on the surface of the substrate having the light-shielding pattern, and a phase difference of 0 with respect to the exposure light transmitted through the non-deposited (and non-etched) region of the transparent substrate. Then, a resist pattern was formed by exposing and developing using the second pattern data group which is finally formed by engraving the transparent substrate.
Here, the second pattern data includes the light shielding film 17 in the opening.
When 02 exist adjacent to each other, the width is increased to 1/2 of the width of the light shielding film (FIG. 19B).

Using this resist pattern as a mask, the SiO ₂ film 1 is selectively formed in a liquid phase from the exposed transparent substrate surface.
704 was deposited with a film thickness d = 195 nm (FIG. 19).
(C)). The film thickness at this time is the deposited SiO ₂ film 17
In consideration of the refractive index of 1.49 at 193 nm, the optical path length difference of about λ / 2 is set for the exposure light transmitted through the non-deposition (and non-etching) surface of the transparent substrate 1701 with respect to the exposure wavelength. It was a size to give.

Then, the photosensitive resin film 1703 was removed (FIG. 19D), and a new photosensitive resin film 1705 was formed on the pattern surface. (FIG.19 (e)). This resin film 17
For 05, a resist pattern was formed by exposing and developing using the pattern data group formed by the engraved portion of the transparent substrate 1701. Here, the third pattern data is created to be 0.1 μm larger than the width of the light-shielding film when the light-shielding film 1702 is adjacent to the opening (FIG. 19).
(F)). The size of 0.1 μm is a value set to be approximately twice the alignment accuracy of the drawing apparatus.

Using this resist pattern as a mask, the transparent substrate 1701 was etched by CF ₄ gas for approximately 190 nm (FIG. 19G). This etching amount was a size that gives a difference in optical path length of λ / 2 with respect to the non-etching surface with respect to the exposure wavelength with respect to the refractive index of 1.5 at 193 nm of the transparent substrate 1701. After that, the photosensitive resin film 1705 was removed to create a desired exposure mask (FIG. 19 (h)).

The present embodiment relates to a method of manufacturing an ArF excimer laser exposure mask, but the exposure wavelength is not limited to this, and the I-line (365 nm) and Kr of a mercury lamp are used.
F excimer laser (248 nm), XeHg lamp (2
It is also applicable to an exposure mask used for 48 to 250 nm). In this case, it is necessary to change the deposition amount d of the SiO ₂ film according to the exposure wavelength λ and the refractive index n of the transparent substrate at the exposure wavelength. At this time, the etching amount d may be determined according to d = λ / (2 (n-1)).

In this embodiment, quartz is used for the transparent substrate.
However, Si is not limited to this. ₃N_Four, Al
₂O₃, CaF₂, MgF₂, HfO₂Instead of
May be. In this case, it is used for etching the transparent substrate
The gas may be selected according to the material of the translucent substrate.

Further, instead of the SiO ₂ film deposited on the translucent substrate, Si ₃ N ₄ , Al ₂ O ₃ , CaF ₂ , MgF are used.
₂ , HfO ₂ may be used instead. In this case, the gas used for etching the deposited film may be selected according to the material of the transparent substrate.

Although the film having CrON as a composition is used as the light-shielding material, it is not limited to this, and MoSi, Si
You may use the film which contains in the composition.

Also in the drawing when creating the mask pattern,
It is possible to use electron beams and ultraviolet rays at appropriate times. However,
When an electron beam is used after forming the light-shielding pattern, it is preferable to form a conductive film on or below the photosensitive resin film and then perform the exposure.

The present invention is not limited to the above-described embodiments, and various modifications can be carried out without departing from the scope of the invention.

[0154]

As described above in detail, according to the present invention, the adjustment of the image intensity, which is performed by the conventional exposure mask, is not adjusted by the opening width, but the engraved amount of the transparent substrate is adjusted. By adjusting, the desired exposure amount of the Levenson method application pattern and the non-application pattern can be adjusted without being restricted by the pattern.

[Brief description of drawings]

FIG. 1 is a sectional view showing a basic structure of an exposure mask according to the present invention, showing an example in which a non-phase shift portion has an isolated pattern of substantially the same size as a phase shift portion.

FIG. 2 is a cross-sectional view showing a basic structure of an exposure mask according to the present invention, showing an example in which a non-phase shift portion has an isolated pattern having a size larger than that of the phase shift portion.

FIG. 3 is a cross-sectional view showing a basic configuration of an exposure mask according to the present invention, showing an example in which a non-phase shift portion has a periodic pattern of a size larger than that of the phase shift portion.

FIG. 4 is a cross-sectional view of a mask formed such that a periodic edge of a phase shift unit has a phase difference λ / 2 with respect to light transmitted through a transparent substrate.

FIG. 5 is a flowchart for creating mask data according to the first embodiment.

6A and 6B are cross-sectional views showing a manufacturing process of an exposure mask according to the second embodiment using the mask data created in FIG.

FIG. 7 is a flowchart for creating mask data according to the fourth embodiment.

FIG. 8 is a cross-sectional view showing the manufacturing process of the exposure mask according to the fifth embodiment using the mask data created in FIG.

9 is a diagram showing the relationship between the exposure latitude and the depth of focus obtained by the exposure mask created in the process of FIG.

10 is a diagram showing the relationship between the exposure latitude and the depth of focus obtained by the exposure mask created in the process of FIG.

FIG. 11 is a flowchart for creating mask data according to the seventh embodiment.

FIG. 12 is a diagram showing the relationship between the exposure latitude and the depth of focus obtained by the exposure mask created using the mask data of FIG. 11.

13 is a diagram showing the relationship between the exposure latitude and the depth of focus obtained by the exposure mask created using the mask data of FIG.

14 is a diagram showing the relationship between the exposure dose latitude and the depth of focus obtained by the exposure mask created using the mask data of FIG.

FIG. 15 is a twelfth example using the mask data created in FIG.
FIG. 6 is a cross-sectional view showing the first half of the manufacturing process of the phase shift member deposition type exposure mask according to the embodiment of FIG.

FIG. 16 is a twelfth example using the mask data created in FIG.
FIG. 6 is a cross-sectional view showing the latter half of the manufacturing process of the phase shift member deposition type exposure mask according to the embodiment of FIG.

FIG. 17 is a thirteenth image using the mask data created in FIG.
FIG. 6 is a cross-sectional view showing the first half of the manufacturing process of the phase shift member deposition type exposure mask according to the embodiment of FIG.

FIG. 18 is a thirteenth image using the mask data created in FIG.
FIG. 6 is a cross-sectional view showing the latter half of the manufacturing process of the phase shift member deposition type exposure mask according to the embodiment of FIG.

FIG. 19 is a fourteenth view using the mask data created in FIG.
6A and 6B are cross-sectional views showing the manufacturing process of the phase shift member deposition type exposure mask according to the embodiment of FIG.

[Explanation of symbols]

1 ... Translucent substrate 2 ... Shading film 501, 503, 701, 703, 1101, 1103
... Phase shift patterns 502, 504, 702, 704, 1102, 1104 having a relative phase difference λ with respect to the non-engraved portion of the transparent substrate.
… Phase shift patterns 505 and 705 having relative phase difference λ / 2 with respect to the light-transmissive substrate non-engraved portion ... Non-phase shift pattern 1105 with relative phase difference 0 with respect to light-transmissive substrate non-engraved portion ... Relative phase difference λ
1/2 non-phase shift pattern 601, 801, 1501, 1601, 1701 ... Translucent substrate 602, 802, 1502, 1602, 1702 ... Light shielding film 603, 604, 803, 804, 1503, 150
4,1505,1604,1605,1703,170
5 ... Photosensitive resin film 1603, 1704 ... Phase shifter material deposited film

─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Satoshi Tanaka 1 Komukai Toshiba-cho, Komukai-shi, Kawasaki-shi, Kanagawa, Toshiba Research & Development Center Co., Ltd. (56) Reference JP-A-6-266096 (JP, A) Kaihei 6-110194 (JP, A) JP 8-190189 (JP, A) JP 6-222190 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) G03F 1 / 08

Claims (3)

(57) [Claims] 1. A phase difference of 180 ° is provided between adjacent light transmitting portions.
It is a method of manufacturing a Levenson type exposure mask
Then, a first photosensitive resin film having a pattern of a first pattern data group including all opening patterns is formed on the light shielding film formed on the transparent substrate, and the pattern of the photosensitive resin film is formed. Selectively etching the light-shielding film with the mask as the mask, and further removing the remaining photosensitive resin film to form the opening pattern group, and the difference in the optical path length between the light transmitted through the non-processed region of the transparent substrate is A second photosensitive resin film having a pattern of a second pattern data group in which an opening pattern of approximately λ is extracted is formed, and the opening of the light-transmissive substrate before processing is formed using this photosensitive resin film pattern as a mask. Through which etching is performed so that the optical path length difference with respect to the light passing therethrough becomes approximately λ / 2, and the remaining photosensitive resin film is removed, and the optical path between the light passing through the non-processed region of the transparent substrate. Aperture with a length difference of approximately λ / 2 and λ Third pattern extracted
Forming a third photosensitive resin film having a pattern of the pattern data group, and using the pattern of the photosensitive resin film as a mask, the transparent substrate has an optical path length difference substantially equal to that of light transmitted through a non-processed region of the substrate. Etching to increase by λ / 2,
And a step of removing the remaining photosensitive resin film, and a method for manufacturing an exposure mask. 2. Adjacent light transmitting parts have a phase difference of 180 °.
It is a method of manufacturing a Levenson type exposure mask
Then, a first photosensitive resin film having a pattern of a first pattern data group including all opening patterns is formed on the light shielding film formed on the transparent substrate, and the pattern of the photosensitive resin film is formed. Selectively etching the light-shielding film with the mask as the mask, and further removing the remaining photosensitive resin film to form the opening pattern group; and the difference in the optical path length for the light transmitted through the non-processed region of the transparent substrate is almost equal. A second photosensitive resin film having a pattern of a second pattern data group in which an opening pattern of λ is extracted is formed, and the opening of the light-transmissive substrate before processing is formed using this photosensitive resin film pattern as a mask. Etching is performed so that the optical path length difference for the transmitted light is approximately λ, and the remaining photosensitive resin film is removed, and the optical path length difference for the light transmitted through the non-processed region of the transparent substrate is almost equal. Aperture of λ / 2 A third photosensitive resin film having a pattern of the third pattern data group in which the turns are extracted is formed, and the pattern of the photosensitive resin film is used as a mask for the light transmitted through the opening before processing the transparent substrate. A step of performing etching so that the optical path length difference is approximately λ / 2, and further removing the remaining photosensitive resin film, and a method for manufacturing an exposure mask. 3. Adjacent light transmitting portions have a phase difference of 180 °.
It is a method of manufacturing a Levenson type exposure mask
Then, a first photosensitive resin film having a pattern of a first pattern data group including all opening patterns is formed on the light shielding film formed on the transparent substrate, and the pattern of the photosensitive resin film is formed. Selectively etching the light-shielding film with the mask as a mask, and further removing the remaining photosensitive resin film to form an opening pattern group, and among all the phase shift openings and non-phase shift parts of the transparent substrate. Secondly, an opening pattern is extracted in which the optical path length difference for light transmitted through the non-processed region of the transparent substrate is approximately λ.
Forming a second photosensitive resin film having a pattern of the pattern data group, and using the pattern of the photosensitive resin film as a mask, the optical path length difference for the light passing through the opening before processing the transparent substrate is approximately λ. And a step of removing the remaining photosensitive resin film, and a phase shift opening pattern having an optical path length difference of about λ for light transmitted through the non-processed region of the transparent substrate. A third photosensitive having a pattern of a third pattern data group in which an opening pattern having an optical path length difference of about λ / 2 and λ for light transmitted through a non-processed region of the translucent substrate in the non-phase shift part is extracted. A transparent resin film is formed, and the light-transmissive substrate is etched using the pattern of the photosensitive resin film as a mask so that the optical path length difference with respect to the light transmitted through the non-processed region of the substrate is increased by approximately λ / 2. Remaining photosensitivity Removing the Aburamaku, manufacturing method for an exposure mask which comprises a city.