JPH052261A - Mask and projection exposure method using the same - Google Patents

Mask and projection exposure method using the same

Info

Publication number
JPH052261A
JPH052261A JP3177816A JP17781691A JPH052261A JP H052261 A JPH052261 A JP H052261A JP 3177816 A JP3177816 A JP 3177816A JP 17781691 A JP17781691 A JP 17781691A JP H052261 A JPH052261 A JP H052261A
Authority
JP
Japan
Prior art keywords
mask
light
pattern
shielding portion
exposure method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3177816A
Other languages
Japanese (ja)
Other versions
JP2694707B2 (en
Inventor
Seitaro Matsuo
誠太郎 松尾
Yoshinobu Takeuchi
良亘 竹内
Kazuhiko Komatsu
一彦 小松
Emi Tamechika
恵美 為近
Katsuyuki Harada
勝征 原田
Yoshiaki Mimura
義昭 三村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP17781691A priority Critical patent/JP2694707B2/en
Priority to EP92302512A priority patent/EP0507487B1/en
Priority to DE69215942T priority patent/DE69215942T2/en
Priority to US07/863,454 priority patent/US5208629A/en
Priority to KR1019920005715A priority patent/KR970004682B1/en
Publication of JPH052261A publication Critical patent/JPH052261A/en
Application granted granted Critical
Publication of JP2694707B2 publication Critical patent/JP2694707B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To realize the projection-exposure method which is improved in resolution and the mask used for the method without using any aperture part filter. CONSTITUTION:Light intensity of each degree of diffracted light is proportional to the level of each component of a mask pattern at the time of Fourier expansion, so the light shield part 2 of the mask 4 is made translucent, its transmissivity is set according to pattern properties, and transmitted light of the light shield part is given a 180 phase difference from passing light of a mask transparent part 3. Consequently, the component of degree 0 of the diffracted light is reduced to relatively half and the balance with diffracted light of degree 1 can be obtained without using any aperture part filter. Further, a high contrast and high resolution are both obtained without altering a projection lens system.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、ＬＳＩ等の微細パタン
を投影光学系を用いて基板上に形成するときの微細パタ
ン形成方法いわゆる投影露光方法およびそれに用いるマ
スク（レチクル）に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fine pattern forming method for forming a fine pattern such as an LSI on a substrate by using a projection optical system, a so-called projection exposure method, and a mask (reticle) used therefor.

【０００２】[0002]

【従来の技術】従来より、ＬＳＩ等の微細パタンを形成
するための投影露光装置には高い解像力が要求されてい
る。そのため、最近の投影露光装置の投影レンズ系は、
光の波長から決まる理論限界に近い解像度を有してい
る。それにもかかわらず、さらに微細なパタンを形成す
ることが要求されている。それに答えるための方法とし
て、位相シフト法が知られている。この位相シフト法で
は従来法の約２倍の解像度の向上が図れるが、適用でき
るパタンが限定される。マスクの製作が複雑で信頼性や
歩留りの低下の原因になるなどの欠点を有していた。2. Description of the Related Art Conventionally, a projection exposure apparatus for forming a fine pattern such as an LSI is required to have a high resolution. Therefore, the projection lens system of the recent projection exposure apparatus is
It has a resolution close to the theoretical limit determined by the wavelength of light. Nevertheless, it is required to form finer patterns. A phase shift method is known as a method for answering this. This phase shift method can improve the resolution by about twice as much as the conventional method, but the applicable pattern is limited. The mask has a drawback that it is complicated to manufacture and causes a decrease in reliability and yield.

【０００３】これに対し、同一出願人にて既に提案した
「微細パタン投影露光方法」では、マスクを照明する光
線に対し、投影レンズの開口数に対応した傾きを光軸に
対し付与したマスク照明系を用いることによって、従来
のマスクを用いても位相シフト法と同程度の高解像性を
実現できることを明らかにした。On the other hand, in the "fine pattern projection exposure method" already proposed by the same applicant, mask illumination in which an inclination corresponding to the numerical aperture of the projection lens is given to the optical axis with respect to the light beam illuminating the mask By using the system, it was clarified that high resolution as high as that of the phase shift method can be realized even with the conventional mask.

【０００４】その原理を図３に示す。図３(a)に示す従
来法では、照射光Ｉはマスク１１にほぼ垂直に入射す
る。そして、マスクパタン１２の波数（空間周波数）に
応じた回折光を生じて、その回折光が投影レンズ系１３
の入射瞳（アパーチャ）１４を通過して基板つまりウエ
ハ上に像を生じる。このとき、用いる光の波数ｋ0（波
数の逆数）に対し、ｋ1＝ｋ0ｓｉｎα（ただしｓｉｎ
α：投影レンズの開口数）で与えられる波数ｋ1が投影
レンズ系１３を通過できる最大波数を与え、解像限界を
与える。The principle is shown in FIG. In the conventional method shown in FIG. 3A, the irradiation light I is incident on the mask 11 almost vertically. Then, diffracted light corresponding to the wave number (spatial frequency) of the mask pattern 12 is generated, and the diffracted light is projected onto the projection lens system 13.
Through the entrance pupil (aperture) 14 to produce an image on the substrate or wafer. At this time, for the wave number k 0 of the light used (the reciprocal of the wave number), k 1 = k 0 sin α (where sin
The wave number k 1 given by α: numerical aperture of the projection lens gives the maximum wave number that can pass through the projection lens system 13 and gives the resolution limit.

【０００５】これに対し、図３(b)に示す如く投影レン
ズ系の開口数に対応させて斜め方向からマスク１１を照
射する斜入射法では、マスクパタン１２の波数成分の２
ｋ1までが投影レンズ系１３を通過できるようになり、
従来の約２倍の解像性が得られるようになる。詳しくは
先の同一出願人に係る上記「微細パタン投影露光方法」
を参照されたい。なお、図３中Ｉ′はマスク１１を斜め
方向から照射するために投影レンズ系の開口数に対応し
た角度の傾きが光軸ｚに対し付与される照射光であり、
Ｉ0とＩ+1，Ｉ-1はマスクパタンの波数に応じた０次と
＋１次，−１次の回折光をそれぞれ示している。On the other hand, as shown in FIG. 3B, in the oblique incidence method of irradiating the mask 11 from an oblique direction corresponding to the numerical aperture of the projection lens system, 2 of the wave number components of the mask pattern 12 is used.
Up to k 1 can pass through the projection lens system 13,
The resolution is about twice that of the conventional one. For details, refer to the above-mentioned “fine pattern projection exposure method” related to the same applicant.
Please refer to. It should be noted that I'in FIG. 3 denotes irradiation light which is given to the optical axis z an inclination of an angle corresponding to the numerical aperture of the projection lens system for irradiating the mask 11 from an oblique direction.
I 0 , I +1 and I −1 respectively represent 0th order, + 1st order and −1st order diffracted light according to the wave number of the mask pattern.

【０００６】ここで説明のため、マスクパタン（マスク
通過直後の光）が１＋ｃｏｓｋｘで与えられるような１
次元格子パタンを考える。その時、回折光は０次と＋１
次，−１次の３つの成分からなり（Ｉ0，Ｉ+1，
Ｉ-1）、その振幅の比は２：１：１となる。図３(a)の
従来方法ではその全部を利用して、マスクパタンを像と
して再現する。For the sake of explanation, the mask pattern (light immediately after passing through the mask) is given by 1 + coskx.
Consider a three-dimensional lattice pattern. At that time, the diffracted light is 0th and +1
It is composed of three components of the next and −1st order (I 0 , I +1 ,
I −1 ), and the amplitude ratio is 2: 1: 1. In the conventional method of FIG. 3 (a), the mask pattern is reproduced as an image by using all of them.

【０００７】しかし、図３(b)の斜入射法を用いた投影
露光方法では０次と＋１次の２つの成分（Ｉ0，Ｉ+1）
のみしか利用しないので、高解像性が得られる反面、像
のコントラストが低下する。上記の「微細パタン投影露
光方法」では、これを解決するために、投影レンズの開
口絞り部に０次光成分を１／２にするようなフィルタを
設ける方法を提案している。However, in the projection exposure method using the oblique incidence method of FIG. 3B, two components (I 0 , I +1 ) of 0th order and + 1st order
Since only one is used, high resolution can be obtained, but the image contrast is reduced. In the above "fine pattern projection exposure method", in order to solve this, a method of providing a filter for halving the 0th-order light component in the aperture stop of the projection lens is proposed.

【０００８】[0008]

【発明が解決しようとする課題】しかしながら、このよ
うな投影露光方法においては、投影レンズ系の設計では
種々の収差を極限まで低下するようにし、きわめて高精
度に製造され、調整されているので、開口絞り部に設け
るフィルタの精度や構成が十分ではない場合は、期待さ
れる解像特性の向上が十分には実現できないこともあり
うるという欠点がある。However, in such a projection exposure method, various aberrations are designed to be reduced to the utmost limit in the design of the projection lens system, and the projection exposure system is manufactured and adjusted with extremely high accuracy. If the accuracy and structure of the filter provided in the aperture stop are not sufficient, there is a drawback that expected improvement in resolution characteristics may not be realized sufficiently.

【０００９】本発明は以上の点に鑑みてなされたもので
あり、その目的は、上記の開口部フィルタを用いる必要
がなく、コントラスト及び解像性が十分な投影露光方法
およびそれに用いるマスクを提供することにある。The present invention has been made in view of the above points, and an object thereof is to provide a projection exposure method having sufficient contrast and resolution without using the above-mentioned aperture filter, and a mask used therefor. To do.

【００１０】[0010]

【課題を解決するための手段】上記の目的を達成するた
めに本発明は、マスクの構成を変えることにより、回折
光の０次成分を相対的に１／２となるようにし、１次回
折光とのバランスを、開口部フィルタを用いることなく
達成し、さらに高コントラストと高解像性とを投影レン
ズ系を変更することなく、両立させるようにしたことを
最も主要な特徴とする。In order to achieve the above-mentioned object, the present invention changes the structure of the mask so that the 0th order component of the diffracted light becomes relatively 1/2 and the 1st order diffracted light is obtained. The most important feature is that the balance between and is achieved without using an aperture filter, and high contrast and high resolution are achieved at the same time without changing the projection lens system.

【００１１】ここで、回折光の各次数の光強度はマスク
パタンをフーリエ展開したときの各成分の大きさに比例
することに着目し、マスクの遮光部を視点を変えて積極
的に利用するようにしたものである。すなわち、従来で
は光を通さない遮光部を半透明にし、その透過率を調整
すると同時に、マスクの透明部との位相差が１８０°と
なるようにすることにより、負の強度（振幅強度）とし
て利用して、０次成分（直流成分）の値を調整するよに
している。Here, paying attention to the fact that the light intensity of each order of the diffracted light is proportional to the magnitude of each component when the mask pattern is Fourier expanded, and the light shielding portion of the mask is positively used by changing the viewpoint. It was done like this. That is, in the conventional case, the light-shielding portion that does not transmit light is made semi-transparent, and its transmittance is adjusted, and at the same time, the phase difference with the transparent portion of the mask is set to 180 °, so that the negative intensity (amplitude intensity) is obtained. The value of the zero-order component (DC component) is adjusted by utilizing this.

【００１２】[0012]

【作用】このように本発明によると、マスクの遮光部を
半透明にし、その透過率をパタン幅などの性状によって
設定するとともに、半透明遮光部とマスク透明部を通る
光に１８０°の位相差をもたせることにより、開口部フ
ィルタを用いることなく、コントラスト，解像性を向上
させることができる。As described above, according to the present invention, the light-shielding portion of the mask is made semi-transparent, and its transmittance is set by the properties such as the pattern width, and the light passing through the semi-transparent light-shielding portion and the mask transparent portion has an angle of about 180 °. By providing a phase difference, contrast and resolution can be improved without using an aperture filter.

【００１３】[0013]

【実施例】本発明の投影露光方法に用いられるマスクの
構造と作用を図１に示す。ここで、図１(a)において１
は透明性のマスク基板、２はこのマスク基板１の一方の
面に所定パタンを有して形成された半透明の遮光部を構
成するマスク材、３はマスクの透明部であり、これらに
よりマスク４を構成している。マスク材２としては、用
いる光の波長λでの屈折率ｎに対して（ｎ−１）ｄ＝λ
／２で決まる厚さｄを用い、それと同時に、その時の透
過率がｔとなるような材料を選べば、マスクの透明部３
の光と位相差π（１８０°）で振幅比ｔとすることがで
き、振幅の符号と値を調整することができる。他の方法
としては、マスク材として２層構造を用いて、透過率と
位相差を独立にそれぞれの層で制御してもよい。また、
位相差はマスク透明部（厚さなど）で制御し、透過率の
みをマスク材で調整してもよい。FIG. 1 shows the structure and operation of a mask used in the projection exposure method of the present invention. Here, in FIG. 1 (a), 1
Is a transparent mask substrate, 2 is a mask material forming a semitransparent light-shielding portion formed on one surface of the mask substrate 1 with a predetermined pattern, and 3 is a transparent portion of the mask. Make up 4. As the mask material 2, (n-1) d = λ with respect to the refractive index n at the wavelength λ of the light used.
If the thickness d determined by / 2 is used and at the same time a material is selected so that the transmittance at that time is t, the transparent portion 3 of the mask is
It is possible to set the amplitude ratio t by the phase difference π (180 °) with the above light, and the sign and value of the amplitude can be adjusted. As another method, a two-layer structure may be used as the mask material, and the transmittance and the retardation may be independently controlled in each layer. Also,
The phase difference may be controlled by the mask transparent portion (thickness, etc.), and only the transmittance may be adjusted by the mask material.

【００１４】図１(a)ではマスク４の遮光部と透明部の
比が１：１の１次元格子パタンの例が示されており、そ
のときの振幅分布が図１(b)に示されている。Ａ0は直流
成分（０次成分）、Ａ1はパタン形状の振幅を表してい
る。透過率ｔ＝０は従来の通常マスクの場合に対応し、
Ａ0＝１／２、Ａ1＝１／２であり、Ａ0／Ａ1＝１となっ
ている。Ａ1は正と負の１次以上の回折光強度に対応す
る。そこで、Ａ0／Ａ1を従来値の１／２に設定すれば、
投影レンズ開口絞りに用いるフィルタと同等の結像特性
（コントラスト）が得られるようになる。FIG. 1 (a) shows an example of a one-dimensional lattice pattern in which the ratio of the light-shielding portion to the transparent portion of the mask 4 is 1: 1 and the amplitude distribution at that time is shown in FIG. 1 (b). ing. A 0 represents a DC component (zero-order component), and A 1 represents a pattern-shaped amplitude. The transmittance t = 0 corresponds to the case of the conventional normal mask,
A 0 = 1/2, A 1 = 1/2, and A 0 / A 1 = 1. A 1 corresponds to the positive and negative first-order and higher-order diffracted light intensities. Therefore, if A 0 / A 1 is set to 1/2 of the conventional value,
An image forming characteristic (contrast) equivalent to that of the filter used for the aperture stop of the projection lens can be obtained.

【００１５】図１(b)からわかるように、振幅透過率を
ｔとすると、Ａ0＝（１−ｔ）／２，Ａ1＝（１＋ｔ）／
２であるので、Ａ0／Ａ1＝１／２の関係によりｔ＝１／
３が得られる。回折光の０次，±１次への配分の変化の
様子（２次以上は省略）を図１(c)に示す。ｔ＝１／３
で、１：１：１が実現される。なお、図１(c)中Ｉは照
射光、Ｉ0は０次の回折光、Ｉ+1は＋１次の回折光、Ｉ
-1は−１次の回折光をそれぞれ示している。As can be seen from FIG. 1 (b), when the amplitude transmittance is t, A 0 = (1-t) / 2, A 1 = (1 + t) /
Since it is 2, t = 1 / by the relation of A 0 / A 1 = 1/2
3 is obtained. Fig. 1 (c) shows how the distribution of diffracted light changes to the 0th and ± 1st orders (the second and higher orders are omitted). t = 1/3
Then, 1: 1: 1 is realized. In FIG. 1C, I is irradiation light, I 0 is 0th-order diffracted light, I +1 is + 1st-order diffracted light, I
-1 indicates the -1st order diffracted light.

【００１６】図２は、振幅透過率ｔの値を変化させたと
きの結像のコントラストの変化に関しての計算機シミュ
レーション結果を示す。ただし、このコントラストは最
大エネルギー強度をＩmax、最小エネルギー強度をＩmin
としたとき、（Ｉmax−Ｉmin）／（Ｉmax＋Ｉmin）で表
される。この時のマスク照明系は軸対称の斜め照射（Ｎ
Ａ′＝０．４５〜０．５）の条件であり、投影レンズ系
の開口数ＮＡ＝０．５、光源はｉ線（λ＝３６５ｎｍ）
としている。FIG. 2 shows the result of computer simulation regarding the change of the contrast of the image formation when the value of the amplitude transmittance t is changed. However, this contrast has a maximum energy intensity of I max and a minimum energy intensity of I min.
Is expressed by (I max −I min ) / (I max + I min ). At this time, the mask illumination system has an axially symmetric oblique irradiation (N
A ′ = 0.45 to 0.5), the numerical aperture NA of the projection lens system is 0.5, and the light source is i-line (λ = 365 nm).
I am trying.

【００１７】これまでの説明に対応して、解像限界に近
い０．２５μｍ以上のラインアンドスペース（パタン
幅）では、ｔ＝１／３で最大コントラストが得られてい
る。また、ｔ＝１／３のときのコントラストの各値は、
通常マスクでの開口部フィルタ（周辺円環部の透過率５
０％）と軸対称斜入射照明系との組合わせのシミュレー
ション結果に極めて良く一致しており、本発明における
考え方の正しさを裏付けている。Corresponding to the above description, in the line and space (pattern width) of 0.25 μm or more, which is close to the resolution limit, the maximum contrast is obtained at t = 1/3. Further, each value of the contrast when t = 1/3 is
Ordinary mask aperture filter (Transmittance of the peripheral ring 5
0%) and the axisymmetric grazing incidence illumination system in a very good agreement with the simulation result, which supports the correctness of the concept of the present invention.

【００１８】以上では本発明によるマスクの遮光部（半
透明）と透明部の面積比が１：１の場合を説明したが、
その比が変化した場合は、それに応じて透過率ｔを調整
すればよい。しかし、図２に示すように、透過率ｔの値
にはゆるやかな依存性を示すので、例えばｔ＝０．２〜
０．６の範囲で大雑把にｔの値を選んだとしてもかなり
大きな効果が得られる。このため、パタン性状に応じて
大まかなｔの値を設定すれば、十分な効果が得られると
考えられる。The case where the area ratio of the light-shielding portion (semi-transparent) to the transparent portion of the mask according to the present invention is 1: 1 has been described above.
When the ratio changes, the transmittance t may be adjusted accordingly. However, as shown in FIG. 2, since the value of the transmittance t has a gradual dependence, for example, t = 0.2 to
Even if the value of t is roughly selected within the range of 0.6, a considerable effect can be obtained. Therefore, it is considered that a sufficient effect can be obtained by setting a rough value of t according to the pattern property.

【００１９】以上の実施例では本発明によるマスクを斜
入射照明系との組合わせについて作用，効果を説明した
が、通常の照明系と組合わせた場合は、位相シフト法と
類似のパタン境界部をシャープにする効果があり、特に
ｔ＝０．２以下の領域では通常照明系での特性改善効果
が得られる。In the above embodiments, the operation and effect of the combination of the mask according to the present invention with the grazing incidence illumination system have been described. However, when the mask according to the present invention is combined with the ordinary illumination system, the pattern boundary portion similar to the phase shift method is used. Is sharpened, and particularly in the region of t = 0.2 or less, a characteristic improving effect in a normal illumination system can be obtained.

【００２０】なお、今後、光リソグラフィーで使われそ
うな代表的な光源（ｉ線やｇ線，あるいはＡｒＦ，Ｋｒ
Ｆエキシマー等）に対して用いるときは、各光に対し、
(i)マスクの遮光部が半透明で、その透過率がパタン幅
などの性状によって設定され、かつ(ii)半透明遮光部と
透明部を通った光が１８０°の位相差をもつ、２つの要
件を満たすようにマスクを構成することもできる。It should be noted that typical light sources (i-line, g-line, ArF, Kr) which are likely to be used in optical lithography in the future.
F excimer, etc.), for each light,
(i) The light-shielding portion of the mask is semi-transparent, its transmittance is set by properties such as pattern width, and (ii) the light passing through the semi-transparent light-shielding portion and the transparent portion has a phase difference of 180 °. The mask can also be configured to meet one requirement.

【００２１】[0021]

【発明の効果】以上説明したように本発明によれば、マ
スクの遮光部を半透明にし、その透過率を調整するとと
もに、マスクの透過部との位相差が１８０°となるよう
にすることにより、投影レンズ系の変更なしに、斜入射
照明系の特長を十分に発揮できるような投影露光方法お
よびマスクを提供できる。このため、微細，高精度なパ
タンを確実に形成することができる。また、マスク製作
に際し、従来のマスク材（クロム薄膜など）のかわりに
本発明の要件を満たすマスク材を用いるだけの変更で、
従来のマスクパタン製造工程とほぼ同様のため、信頼性
や歩留りも十分に確保でき、また、ほとんど任意のパタ
ンに対して有効であるという利点がある。As described above, according to the present invention, the light-shielding portion of the mask is made semitransparent, its transmittance is adjusted, and the phase difference with the transparent portion of the mask is 180 °. As a result, it is possible to provide a projection exposure method and a mask that can fully exhibit the characteristics of the oblique incidence illumination system without changing the projection lens system. Therefore, a fine and highly accurate pattern can be reliably formed. In addition, when manufacturing a mask, a mask material satisfying the requirements of the present invention can be used instead of the conventional mask material (such as a chrome thin film).
Since it is almost the same as the conventional mask pattern manufacturing process, there are advantages that reliability and yield can be sufficiently secured, and that it is effective for almost any pattern.

【図面の簡単な説明】[Brief description of drawings]

【図１】(a)は本発明の投影露光方法に用いるマスクの
概略図、(b)はそのマスクの振幅分布を示す図、(c)は同
じくそのマスクの回折光の０次，±１次への配分の変化
の様子を従来例と対比して示す説明図である。FIG. 1A is a schematic diagram of a mask used in a projection exposure method of the present invention, FIG. 1B is a diagram showing an amplitude distribution of the mask, and FIG. 1C is the 0th order ± 1 of diffracted light of the mask. It is explanatory drawing which shows the mode of change of distribution to the next contrasted with the prior art example.

【図２】本実施例のマスクの振幅透過率に対する結像の
コントラストの変化に関する計算機シミュレーション結
果を示す図である。FIG. 2 is a diagram showing a computer simulation result regarding a change in contrast of image formation with respect to the amplitude transmittance of the mask of the present embodiment.

【図３】(a)は従来の照射法の説明図、(b)は同一出願人
にて提案しているマスクを斜め方向から照射する斜め入
射法の説明図である。3A is an explanatory view of a conventional irradiation method, and FIG. 3B is an explanatory view of an oblique incidence method of irradiating a mask proposed by the same applicant from an oblique direction.

【符号の説明】[Explanation of symbols]

１ マスク基板 ２ マスク材（半透明遮光部） ３ マスクの透明部 ４ マスク 1 mask substrate 2 Mask material (semi-transparent light shielding part) 3 Transparent part of mask 4 mask

───────────────────────────────────────────────────── フロントページの続き (72)発明者 為近 恵美 東京都千代田区内幸町一丁目１番６号 日 本電信電話株式会社内 (72)発明者 原田 勝征 東京都千代田区内幸町一丁目１番６号 日 本電信電話株式会社内 (72)発明者 三村 義昭 東京都千代田区内幸町一丁目１番６号 日 本電信電話株式会社内   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Emi Tamekichi             1-6 Uchisaiwaicho, Chiyoda-ku, Tokyo             Inside Telegraph and Telephone Corporation (72) Inventor Katsuyuki Harada             1-6 Uchisaiwaicho, Chiyoda-ku, Tokyo             Inside Telegraph and Telephone Corporation (72) Inventor Yoshiaki Mimura             1-6 Uchisaiwaicho, Chiyoda-ku, Tokyo             Inside Telegraph and Telephone Corporation

Claims (3)

【特許請求の範囲】[Claims] 【請求項１】 マスク基板と、該マスク基板の一方の面
に所定パタンを有して形成された遮光部を構成するマス
ク材からなり、前記マスクの遮光部は半透明であって、
その透過率がパタン性状に基いて設定され、かつその遮
光部分の通過光がマスクの透明部の通過光と半波長の位
相差をもつようにしたことを特徴とするマスク。1. A mask substrate and a mask material constituting a light-shielding portion formed on one surface of the mask substrate with a predetermined pattern, wherein the light-shielding portion of the mask is semitransparent.
A mask characterized in that its transmittance is set based on a pattern property, and that the light passing through the light-shielding portion has a half-wave phase difference from the light passing through the transparent portion of the mask. 【請求項２】 パタンの描かれたマスクを照射して、投
影光学系によりその像を形成してパタン形成を行う微細
パタン投影露光方法において、前記マスクの遮光部が半
透明であって、その遮光部の透過率がパタン性状に基い
て設定され、かつ該遮光部分の通過光がマスクの透明部
の通過光と半波長の位相差をもたせてなり、このマスク
を用いてパタン形成を行うことを特徴とする投影露光方
法。2. A fine pattern projection exposure method for irradiating a pattern-depicted mask and forming an image by a projection optical system to form a pattern, wherein the light-shielding portion of the mask is semi-transparent, The transmittance of the light-shielding portion is set based on the pattern property, and the light passing through the light-shielding portion has a half-wavelength phase difference from the light passing through the transparent portion of the mask. Pattern formation is performed using this mask. And a projection exposure method. 【請求項３】 請求項１記載のマスクを用い、該マスク
を照明する光線に対して、投影光学系の開口数に対応し
た角度の傾きを光軸に対し与えることにより、その斜め
方向から前記マスクを照射することを特徴とする投影露
光方法。3. The mask according to claim 1, wherein an inclination of an angle corresponding to a numerical aperture of a projection optical system is given to an optical axis with respect to a light beam for illuminating the mask, so that the oblique direction causes A projection exposure method, which comprises irradiating a mask.
JP17781691A 1991-04-05 1991-06-24 Projection exposure method and projection exposure apparatus Expired - Lifetime JP2694707B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP17781691A JP2694707B2 (en) 1991-06-24 1991-06-24 Projection exposure method and projection exposure apparatus
EP92302512A EP0507487B1 (en) 1991-04-05 1992-03-24 Optical projection exposure method and system using the same
DE69215942T DE69215942T2 (en) 1991-04-05 1992-03-24 Method and system for optical projection exposure
US07/863,454 US5208629A (en) 1991-04-05 1992-04-03 Optical projection exposure method and system using the same
KR1019920005715A KR970004682B1 (en) 1991-04-05 1992-04-06 Optical projection exposure method and system using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17781691A JP2694707B2 (en) 1991-06-24 1991-06-24 Projection exposure method and projection exposure apparatus

Publications (2)

Publication Number Publication Date
JPH052261A true JPH052261A (en) 1993-01-08
JP2694707B2 JP2694707B2 (en) 1997-12-24

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ID=16037600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17781691A Expired - Lifetime JP2694707B2 (en) 1991-04-05 1991-06-24 Projection exposure method and projection exposure apparatus

Country Status (1)

Country Link
JP (1) JP2694707B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4339481A1 (en) * 1992-11-21 1994-05-26 Ulvac Coating Corp Phase-shift mask for semiconductor device mfr. - has pattern contg. two transparent sections and phase reversal introduced by one section of pattern deposited as metal silicide, nitride or oxide film
JP2007183404A (en) * 2006-01-06 2007-07-19 Elpida Memory Inc Method for exposing circuit pattern and mask
JP2008003520A (en) * 2006-06-26 2008-01-10 Toshiba Corp Photomask and method for manufacturing semiconductor device
JP2009192811A (en) * 2008-02-14 2009-08-27 Toshiba Corp Lithography simulation method and program
US7681173B2 (en) 2006-03-09 2010-03-16 Elpida Memory, Inc. Mask data generation method and mask

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201030451A (en) * 2008-09-30 2010-08-16 Hoya Corp Multi-tone photomask and method of manufacturing the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04136854A (en) * 1990-09-28 1992-05-11 Hitachi Ltd Photomask and production thereof, formation of pattern by using this method and photomask blank
JPH04162039A (en) * 1990-10-26 1992-06-05 Nikon Corp Photomask

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04136854A (en) * 1990-09-28 1992-05-11 Hitachi Ltd Photomask and production thereof, formation of pattern by using this method and photomask blank
JPH04162039A (en) * 1990-10-26 1992-06-05 Nikon Corp Photomask

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4339481A1 (en) * 1992-11-21 1994-05-26 Ulvac Coating Corp Phase-shift mask for semiconductor device mfr. - has pattern contg. two transparent sections and phase reversal introduced by one section of pattern deposited as metal silicide, nitride or oxide film
US5474864A (en) * 1992-11-21 1995-12-12 Ulvac Coating Corporation Phase shift mask and manufacturing method thereof and exposure method using phase shift mask
US5629114A (en) * 1992-11-21 1997-05-13 Ulvac Coating Corporation Phase shift mask and manufacturing method thereof and exposure method using phase shift mask comprising a semitransparent region
US5691090A (en) * 1992-11-21 1997-11-25 Ulvac Coating Corporation Phase shift mask and manufacturing method thereof and exposure method using phase shift mask
DE4339481C2 (en) * 1992-11-21 1998-08-06 Ulvac Coating Corp Absorption phase mask, manufacturing process therefor and use thereof
JP2007183404A (en) * 2006-01-06 2007-07-19 Elpida Memory Inc Method for exposing circuit pattern and mask
US7632614B2 (en) 2006-01-06 2009-12-15 Elpida Memory, Inc. Circuit pattern exposure method and mask
JP4689471B2 (en) * 2006-01-06 2011-05-25 エルピーダメモリ株式会社 Circuit pattern exposure method and mask
US7681173B2 (en) 2006-03-09 2010-03-16 Elpida Memory, Inc. Mask data generation method and mask
JP2008003520A (en) * 2006-06-26 2008-01-10 Toshiba Corp Photomask and method for manufacturing semiconductor device
JP2009192811A (en) * 2008-02-14 2009-08-27 Toshiba Corp Lithography simulation method and program

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