JPH0235445B2 - - Google Patents
Info
- Publication number
- JPH0235445B2 JPH0235445B2 JP56091800A JP9180081A JPH0235445B2 JP H0235445 B2 JPH0235445 B2 JP H0235445B2 JP 56091800 A JP56091800 A JP 56091800A JP 9180081 A JP9180081 A JP 9180081A JP H0235445 B2 JPH0235445 B2 JP H0235445B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- photo
- exposed
- suction
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 21
- 238000012856 packing Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000002508 contact lithography Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
Description
【発明の詳細な説明】
本発明は露光装置に係り、特に密着露光装置
（コンタクト・プリンタ）及び近接露光装置（プ
ロキシミテイ・プリンタ）に於けるフオト・マス
ク或るいは被露光基板の支持機構に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an exposure apparatus, and more particularly to a support mechanism for a photo mask or a substrate to be exposed in a contact exposure apparatus (contact printer) and a proximity exposure apparatus (proximity printer). .
半導体集積回路装置（IC）等を製造する際に、
該半導体ICの機能領域や配線パターンの位置及
び形状を規定する複数層のフオト・マスク（ワー
キング・マスク）の重ね合わせ精度を高めること
が、その製造歩留まりや集積度を向上せしめるう
えで極めて重要なことである。 When manufacturing semiconductor integrated circuit devices (IC), etc.
Improving the overlay accuracy of the multiple layers of photo masks (working masks) that define the functional areas and the position and shape of the wiring patterns of semiconductor ICs is extremely important for improving the manufacturing yield and degree of integration. That's true.
ワーキング・マスクは一般に高精度に形成され
たマスタ・マスクからコンタクト・プリント方式
により転写形成される。そして従来のコンタク
ト・プリンタに於ては、第１図の上面図ａ及びそ
のＡ−A′矢視断面図ｂに示すように、マスタ・
マスク１の固定支持は、マスタ・マスク１の周縁
部が、マスク支持台２の投光窓３周辺部に設けら
れた真空吸着面４により面吸着されることによつ
てなされていた。（図中、５は真空吸着溝、６は
真空排気孔を示す）
一方マスク基板の平面度はその周縁近傍の領域
では保証されておらず、高精度形成されているマ
スタ・グレードのマスク基板でも10〜20〔μｍ〕
程度の凹凸を有している。そのためマスタ・マス
クをその全周縁部に於て面吸着する方式のマスク
支持機構を有するコンタクト・プリンタに於て
は、マスク周縁部の凹凸のためにマスタ・マスク
が歪んで支持固定されるので、該マスタ・マスク
から転写形成されたワーキング・マスクのパター
ンも歪んだパターンとなり、複数層のワーキン
グ・マスク間には１〔μｍ〕〜２〔μｍ〕弱程度の
重ね合わせずれが生ずるという問題があつた。 The working mask is generally formed by transfer from a highly precisely formed master mask by a contact printing method. In the conventional contact printer, as shown in the top view a of FIG.
The mask 1 is fixedly supported by surface suction of the peripheral edge of the master mask 1 by a vacuum suction surface 4 provided around the light projection window 3 of the mask support base 2. (In the figure, 5 indicates the vacuum suction groove, and 6 indicates the vacuum exhaust hole.) On the other hand, the flatness of the mask substrate is not guaranteed in the area near its periphery, and even with a master grade mask substrate formed with high precision. 10~20 [μm]
It has some degree of unevenness. For this reason, in contact printers that have a mask support mechanism that attaches the master mask to its entire periphery, the master mask is distorted when supported and fixed due to the unevenness of the mask periphery. The pattern of the working mask transferred from the master mask is also a distorted pattern, and there is a problem that an overlay misalignment of a little less than 1 [μm] to 2 [μm] occurs between the working masks of multiple layers. Ta.
本発明は上記問題点を除去する目的で、フオ
ト・マスク或るいは被露光マスク基板を歪めるこ
となく支持できる、露光装置の基板吸着支持機構
を提供する。 In order to eliminate the above-mentioned problems, the present invention provides a substrate suction and support mechanism for an exposure apparatus that can support a photo mask or a mask substrate to be exposed without distorting it.
即ち本発明はフオト・マスク或いはフオト・マ
スクと被露光マスク基板を、それらの平面度が保
証される周縁部より内側の領域内において、三点
若しくはそれ以上の複数点で、吸着面が同一平面
上にある吸着ピンにより吸着固持し、且つ同時に
該フオト・マスク或いはフオト・マスクと被露光
マスク基板の全周縁部を該吸着ピンより可塑性の
大きなパツキンに密接して該フオト・マスク或い
はフオト・マスクと被露光マスク基板の上面と下
面を気密に隔離する、フオト・マスク或いはフオ
ト・マスクと被露光マスク基板の吸着支持機構を
具備せしめてなることを特徴とする。 That is, the present invention provides a method for attaching a photo mask or a photo mask and a mask substrate to be exposed so that their suction surfaces are on the same plane at three or more points within a region inside the peripheral portion where their flatness is guaranteed. The photo mask or photo mask is held by suction by suction pins on the top, and at the same time, the entire periphery of the photo mask or the photo mask and the mask substrate to be exposed is brought into close contact with a packing having greater plasticity than the suction pins. It is characterized by comprising a photo mask or a suction support mechanism for the photo mask and the mask substrate to be exposed, which airtightly isolates the upper and lower surfaces of the mask substrate to be exposed.
以下本発明を一実施例について、第２図に示す
マスク支持機構の上面図ａ、Ａ−A′矢視断面図
ｂ、及び第３図に示す密着露光装置の断面模式図
を用いて詳細に説明する。 Hereinafter, one embodiment of the present invention will be described in detail with reference to a top view a of the mask support mechanism shown in FIG. explain.
本発明の露光装置に於けるフオト・マスク１１
の支持機構は、例えば第２図ａ及びｂに示すよう
に、中央部に投光窓１２を有し、枠部に真空孔１
３が形成されたマスク支持台１４と、該マスク支
持台１４の投光窓１２周辺部に固着され、前記真
空孔１３に接続する真空吸着孔１５を有する３
〔本〕のマスク吸着ピン１６ａ，１６ｂ，１６ｃ
と、これらマスク吸着ピン１６ａ，１６ｂ，１６
ｃの外側に投光窓１２を囲むようにマスク支持台
１４上に固着された枠状パツキン１７を有してな
つている。そして前記マスク吸着ピン１６ａ，１
６ｂ，１６ｃは可塑性の小さい樹脂材料、例えば
テフロン等により２〜３〔mm〕程度の高さに形成
され、投光窓１２周辺部に於けるフオト・マスク
１１（マスク・基板）の平面度が保証される領
域、即ちフオト・マスク１１の周縁部から６〜７
〔mm〕程度以上内側の領域上に、例えば投光窓の
一辺に沿つて２〔本〕対向辺に沿つて１〔本〕配設
される。又前記枠状パツキン１７は可塑性の大き
い樹脂材料、例えばシリコン・ゴム、ネオプレン
等からなる前記マスク吸着ピン１６ａ，１６ｂ，
１６ｃの高さより僅かに厚めのものを用いる。該
フオト・マスク支持機構に於ては、マスク支持台
１４の真空孔１３を真空に排気することにより、
３〔本〕のマスク吸着ピン１６ａ，１６ｂ，１６
ｃの頂部に於てフオト・マスク１１を、その平面
度が保証されている領域で吸着固持するので、フ
オト・マスク１１に歪みを発生させることがな
い。なおこのようにフオト・マスク１１を吸着固
持した状態に於て、前記マスク吸着ピン１６ａ，
１６ｂ，１６ｃの高さより厚くした枠状パツキン
１７はフオト・マスク１１に密着し、フオト・マ
スク１１の上面と下面の間を気密に隔離する。 Photo mask 11 in the exposure apparatus of the present invention
The support mechanism has a light projection window 12 in the center and a vacuum hole 1 in the frame, as shown in FIGS.
3, and a mask support 14 having a vacuum suction hole 15 fixed to the periphery of the light projection window 12 of the mask support 14 and connected to the vacuum hole 13.
[Book] mask suction pins 16a, 16b, 16c
and these mask suction pins 16a, 16b, 16
A frame-shaped packing 17 is fixed to the mask support base 14 so as to surround the light projection window 12 on the outside of the mask 12. And the mask suction pins 16a, 1
6b and 16c are formed of a resin material with low plasticity, such as Teflon, to a height of about 2 to 3 mm, and the flatness of the photo mask 11 (mask/substrate) around the light projection window 12 is adjusted. The area to be guaranteed, i.e. 6-7 from the periphery of the photo mask 11
For example, two (2) along one side of the light projection window and one (1) along the opposite side are disposed on the inner region of about [mm] or more. The frame-shaped packing 17 is made of a resin material with high plasticity, such as silicone rubber, neoprene, etc. The mask suction pins 16a, 16b,
Use one that is slightly thicker than the height of 16c. In the photo mask support mechanism, by evacuating the vacuum hole 13 of the mask support stand 14,
3 [book] mask suction pins 16a, 16b, 16
Since the photo mask 11 is suctioned and held at the top of the photo mask 11 in a region where its flatness is guaranteed, no distortion occurs in the photo mask 11. In addition, in the state where the photo mask 11 is suctioned and fixed in this way, the mask suction pins 16a,
The frame-shaped packing 17, which is thicker than the height of the photo masks 16b and 16c, is in close contact with the photo mask 11 and airtightly isolates the upper and lower surfaces of the photo mask 11.
第３図は上記実施例に示したマスク支持機構と
同様のマスク支持機構を具備せしめた密着露光装
置に於ける一例の概要を示したもので、図中２１
は光源、２２は光学系、２３はマスタ・マスク支
持台、２４はマスタ・マスク、２５はマスク・パ
ターン、２６は被露光基板支持台、２７は被露光
ワーキング・マスク基板、２８はフオト・レジス
ト層、２９は遮光膜、３０，３１は投光窓、３
２，３３は真空孔、３４ｂ，３４ｃ，３５ｂ，３
５ｃはマスク吸着ピン、３６は密着用排気孔、３
７，３８，３９はパツキンを表わしている。 FIG. 3 shows an outline of an example of a contact exposure apparatus equipped with a mask support mechanism similar to the mask support mechanism shown in the above embodiment.
22 is a light source, 22 is an optical system, 23 is a master mask support, 24 is a master mask, 25 is a mask pattern, 26 is a support for a substrate to be exposed, 27 is a working mask substrate to be exposed, 28 is a photo resist layer, 29 is a light shielding film, 30 and 31 are light projection windows, 3
2, 33 are vacuum holes, 34b, 34c, 35b, 3
5c is a mask suction pin, 36 is an exhaust hole for close contact, 3
7, 38, 39 represent Patsukin.
該密着露光装置を用いて、マスタ・マスクから
パターンの転写を行つてワーキング・マスクを形
成する際には、マスタ・マスク支持台２３に前述
した手段によりマスク・パターン２５面を下に向
けてマスタ・マスク２４を吸引固持せしめ、一方
被露光基板支持台２６に同様の手段により未露光
のワーキング・マスク基板２７を、フオト・レジ
スト層２８を有する面を上にして吸引固持せしめ
る。そして該マスタ・マスク支持台２３と被露光
基板支持台２６をパツキン３９を介して重ね、密
着用排気孔３６から排気を行い、マスタ・マスク
支持台２３下面及び被露光基板支持台２６上面と
パツキン３７，３８，３９によつて形成される室
内を減圧することによりマスタ・マスク２４と被
露光ワーキング・マスク基板２７とを密着せしめ
て、光源２１から光学系２２を介して照射される
紫外線等により露光を行う。 When forming a working mask by transferring a pattern from a master mask using the contact exposure apparatus, the master mask is placed on the master mask support 23 with the mask pattern 25 side facing downward. - The mask 24 is suctioned and held, while the unexposed working mask substrate 27 is suctioned and held on the exposed substrate support 26 by the same means, with the side having the photoresist layer 28 facing up. Then, the master mask support 23 and the substrate support 26 to be exposed are overlapped with a gasket 39 interposed therebetween, and exhaust is exhausted from the close-fitting exhaust hole 36. By reducing the pressure in the chamber formed by 37, 38, and 39, the master mask 24 and the working mask substrate 27 to be exposed are brought into close contact with each other. Perform exposure.
なお上記実施例に於ては、マスタ・マスク及び
被露光基板を本発明のマスク支持機構を具備する
支持台に吸引固持したが、マスク基板の平面度が
より高品位（±３〔μｍ〕以下）なマスタ・マス
クのみを本発明の機構により支持した際にも、充
分な効果が得られ、本発明のマスク支持機構を具
備した密着露光装置を用いて形成したワーキン
グ・マスクの重ね合わせ誤差は0.5〔μｍ〕以下で
あつた。 In the above embodiments, the master mask and the substrate to be exposed were suctioned and fixed to a support base equipped with the mask support mechanism of the present invention. ) Even when only a master mask of the present invention is supported by the mechanism of the present invention, a sufficient effect can be obtained, and the overlay error of the working mask formed using the contact exposure apparatus equipped with the mask support mechanism of the present invention can be reduced. It was 0.5 [μm] or less.
また上記実施例では３本のマスク吸着ピンで吸
着支持しているが、４本、５本等の複数本のマス
ク吸着ピンでも同様の効果を得ることはできる。
ただし４本、５本…の場合に比べて、３本の場合
の方が歪んで支持固定されることを防止する効果
は大である。 Further, in the above embodiment, three mask suction pins are used to suction and support, but the same effect can be obtained with a plurality of mask suction pins, such as four or five.
However, compared to the case of 4, 5, etc., the case of 3 pieces is more effective in preventing distortion from being supported and fixed.
又本発明のマスク支持機構は近接露光装置にも
有効である。 Furthermore, the mask support mechanism of the present invention is also effective for close-range exposure equipment.
以上説明したように本発明によればワーキン
グ・マスクの重ね合わせ誤差が減少するので、半
導体ICの製造歩留まりや集積度の向上が図れる。 As explained above, according to the present invention, the overlay error of working masks is reduced, so that the manufacturing yield and degree of integration of semiconductor ICs can be improved.
第１図は従来のマスク支持機構の上面図ａ及び
Ａ−A′矢視断面図ｂ、第２図は本発明の一実施
例に於けるマスク支持機構の上面図ａ及びＡ−
A′矢視断面図ｂ、第３図は本発明の密着露光装
置に於ける一実施例の断面模式図である。
図に於て、１１はフオト・マスク、１２は投光
窓、１３は真空孔、１４はマスク支持台、１５は
真空吸着孔、１６ａ，１６ｂ，１６ｃはマスク吸
着ピン、１７は枠状パツキンを示す。
FIG. 1 is a top view a and a sectional view b taken along the line A-A' of a conventional mask support mechanism, and FIG.
3 is a cross-sectional view schematically showing an embodiment of the contact exposure apparatus of the present invention. In the figure, 11 is a photo mask, 12 is a light projection window, 13 is a vacuum hole, 14 is a mask support stand, 15 is a vacuum suction hole, 16a, 16b, 16c are mask suction pins, and 17 is a frame-shaped gasket. show.
Claims (1)
光マスク基板を、それらの平面度が保証される周
縁部より内側の領域内において、三点若しくはそ
れ以上の複数点で、吸着面が同一平面上にある吸
着ピンにより吸着固持し、且つ同時に該フオト・
マスク或いはフオト・マスクと被露光マスク基板
の全周縁部を該吸着ピンより可塑性の大きなパツ
キンに密接して該フオト・マスク或いはフオト・
マスクと被露光マスク基板の上面と下面を気密に
隔離する、フオト・マスク或いはフオト・マスク
と被露光マスク基板の吸着支持機構を具備せしめ
てなることを特徴とする露光装置。1. The photomask or the photomask and the exposed mask substrate are placed on the same plane at three or more points within a region inside the periphery where their flatness is guaranteed. At the same time, the photo is held in place by a suction pin.
The entire periphery of the mask or photomask and the mask substrate to be exposed is brought into close contact with a gasket having greater plasticity than the suction pins, and the photomask or photomask is moved.
An exposure apparatus comprising a photo mask or a suction support mechanism for the photo mask and the mask substrate to be exposed, which airtightly isolates the upper and lower surfaces of the mask and the mask substrate to be exposed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56091800A JPS57205728A (en) | 1981-06-15 | 1981-06-15 | Exposure device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56091800A JPS57205728A (en) | 1981-06-15 | 1981-06-15 | Exposure device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57205728A JPS57205728A (en) | 1982-12-16 |
| JPH0235445B2 true JPH0235445B2 (en) | 1990-08-10 |
Family
ID=14036687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56091800A Granted JPS57205728A (en) | 1981-06-15 | 1981-06-15 | Exposure device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57205728A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2750554B2 (en) * | 1992-03-31 | 1998-05-13 | 日本電信電話株式会社 | Vacuum suction device |
| JP2009206235A (en) * | 2008-02-27 | 2009-09-10 | Fuji Electric Holdings Co Ltd | Method of manufacturing thin film solar battery |
| JP4952764B2 (en) * | 2009-10-19 | 2012-06-13 | 株式会社村田製作所 | Exposure apparatus and exposure method |
| DE102012111114B4 (en) | 2012-11-19 | 2018-10-04 | Ev Group E. Thallner Gmbh | Semiconductor processing apparatus and method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4888871A (en) * | 1972-02-02 | 1973-11-21 | ||
| JPS52143771A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Aligning method for reticle datum plane |
| JPS5617354A (en) * | 1979-07-20 | 1981-02-19 | Nec Corp | Reticle frame for semiconductor device |
-
1981
- 1981-06-15 JP JP56091800A patent/JPS57205728A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4888871A (en) * | 1972-02-02 | 1973-11-21 | ||
| JPS52143771A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Aligning method for reticle datum plane |
| JPS5617354A (en) * | 1979-07-20 | 1981-02-19 | Nec Corp | Reticle frame for semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57205728A (en) | 1982-12-16 |
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